KR101048635B1 - 플라즈마 프로세서 - Google Patents

플라즈마 프로세서 Download PDF

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Publication number
KR101048635B1
KR101048635B1 KR1020037015780A KR20037015780A KR101048635B1 KR 101048635 B1 KR101048635 B1 KR 101048635B1 KR 1020037015780 A KR1020037015780 A KR 1020037015780A KR 20037015780 A KR20037015780 A KR 20037015780A KR 101048635 B1 KR101048635 B1 KR 101048635B1
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South Korea
Prior art keywords
ground
electrode
voltage
impedance
connection
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KR1020037015780A
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English (en)
Korean (ko)
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KR20040020912A (ko
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니얼 맥기어레일트
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020037015780A 2001-06-07 2002-06-04 플라즈마 프로세서 Expired - Lifetime KR101048635B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29683201P 2001-06-07 2001-06-07
US60/296,832 2001-06-07
US10/028,312 2001-12-28
US10/028,312 US6677711B2 (en) 2001-06-07 2001-12-28 Plasma processor method and apparatus
PCT/US2002/017386 WO2002101784A1 (en) 2001-06-07 2002-06-04 Plasma processor

Publications (2)

Publication Number Publication Date
KR20040020912A KR20040020912A (ko) 2004-03-09
KR101048635B1 true KR101048635B1 (ko) 2011-07-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037015780A Expired - Lifetime KR101048635B1 (ko) 2001-06-07 2002-06-04 플라즈마 프로세서

Country Status (6)

Country Link
US (1) US6677711B2 (enExample)
JP (1) JP4897195B2 (enExample)
KR (1) KR101048635B1 (enExample)
CN (1) CN1515018B (enExample)
TW (1) TW550978B (enExample)
WO (1) WO2002101784A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101423364B1 (ko) 2007-06-28 2014-07-24 램 리써치 코포레이션 전압/전류 프로브 테스트 배열용 장치 및 방법

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046959A1 (en) * 2001-11-27 2003-06-05 Tokyo Electron Limited Plasma processing system
JP3897620B2 (ja) * 2002-03-14 2007-03-28 三菱重工業株式会社 高周波電力供給構造およびそれを備えたプラズマｃｖｄ装置
US20040118344A1 (en) * 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US7042311B1 (en) * 2003-10-10 2006-05-09 Novellus Systems, Inc. RF delivery configuration in a plasma processing system
US20110104381A1 (en) * 2004-01-15 2011-05-05 Stefan Laure Plasma Treatment of Large-Scale Components
US7276135B2 (en) 2004-05-28 2007-10-02 Lam Research Corporation Vacuum plasma processor including control in response to DC bias voltage
US7105075B2 (en) 2004-07-02 2006-09-12 Advanced Energy Industries, Inc. DC power supply utilizing real time estimation of dynamic impedance
US7292045B2 (en) * 2004-09-04 2007-11-06 Applied Materials, Inc. Detection and suppression of electrical arcing
EP1872637B1 (de) * 2005-04-11 2014-05-07 Dr. Laure Plasmatechnologie Gmbh Vorrichtung und verfahren zur plasmabeschichtung
JP5116667B2 (ja) * 2005-06-10 2013-01-09 バード テクノロジーズ グループ インク． 半導体プラズマ発生システムにおける電力潮流を解析するシステムと方法
US7851368B2 (en) * 2005-06-28 2010-12-14 Lam Research Corporation Methods and apparatus for igniting a low pressure plasma
US20080006205A1 (en) * 2006-07-10 2008-01-10 Douglas Keil Apparatus and Method for Controlling Plasma Potential
US7902991B2 (en) * 2006-09-21 2011-03-08 Applied Materials, Inc. Frequency monitoring to detect plasma process abnormality
JP4689586B2 (ja) * 2006-12-06 2011-05-25 太陽誘電株式会社 低歪可変周波数増幅器
US8055203B2 (en) 2007-03-14 2011-11-08 Mks Instruments, Inc. Multipoint voltage and current probe system
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
US20170213734A9 (en) * 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
CN101478857A (zh) * 2008-01-04 2009-07-08 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理装置
US20090230089A1 (en) * 2008-03-13 2009-09-17 Kallol Bera Electrical control of plasma uniformity using external circuit
US7970562B2 (en) * 2008-05-07 2011-06-28 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring power
US8324525B2 (en) * 2008-05-29 2012-12-04 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US8357264B2 (en) * 2008-05-29 2013-01-22 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US7967944B2 (en) * 2008-05-29 2011-06-28 Applied Materials, Inc. Method of plasma load impedance tuning by modulation of an unmatched low power RF generator
US8002945B2 (en) * 2008-05-29 2011-08-23 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
US20090294275A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Method of plasma load impedance tuning by modulation of a source power or bias power rf generator
US8018164B2 (en) * 2008-05-29 2011-09-13 Applied Materials, Inc. Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
US8337661B2 (en) * 2008-05-29 2012-12-25 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
US20090297404A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Plasma reactor with high speed plasma impedance tuning by modulation of source power or bias power
US8040068B2 (en) * 2009-02-05 2011-10-18 Mks Instruments, Inc. Radio frequency power control system
US8674844B2 (en) * 2009-03-19 2014-03-18 Applied Materials, Inc. Detecting plasma chamber malfunction
US9275838B2 (en) * 2009-09-02 2016-03-01 Lam Research Corporation Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof
US20110209995A1 (en) * 2010-03-01 2011-09-01 Applied Materials, Inc. Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit
US20120000888A1 (en) * 2010-06-30 2012-01-05 Applied Materials, Inc. Methods and apparatus for radio frequency (rf) plasma processing
KR101151419B1 (ko) 2010-07-30 2012-06-01 주식회사 플라즈마트 Ｒｆ 전력 분배 장치 및 ｒｆ 전력 분배 방법
KR101251930B1 (ko) * 2011-06-03 2013-04-08 (주)스마텍 필드 강화 유도 결합 플라즈마 처리 장치 및 플라즈마 형성 방법
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
US20130284369A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9620334B2 (en) * 2012-12-17 2017-04-11 Lam Research Corporation Control of etch rate using modeling, feedback and impedance match
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
US9312106B2 (en) * 2013-03-13 2016-04-12 Applied Materials, Inc. Digital phase controller for two-phase operation of a plasma reactor
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9594105B2 (en) * 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US12119206B2 (en) 2015-02-18 2024-10-15 Asm America, Inc. Switching circuit
US11335540B2 (en) 2015-06-29 2022-05-17 Reno Technologies, Inc. Impedance matching network and method
US9876476B2 (en) * 2015-08-18 2018-01-23 Mks Instruments, Inc. Supervisory control of radio frequency (RF) impedance tuning operation
US10187032B2 (en) * 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
CN106856644A (zh) * 2017-01-04 2017-06-16 京东方科技集团股份有限公司 等离子体射流装置
WO2018151920A1 (en) * 2017-02-16 2018-08-23 Applied Materials, Inc. Voltage-current probe for measuring radio-frequency electrical power in a high-temperature environment and method of calibrating the same
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
US12272522B2 (en) 2017-07-10 2025-04-08 Asm America, Inc. Resonant filter for solid state RF impedance matching network
US12334307B2 (en) 2017-07-10 2025-06-17 Asm Ip Holding B.V. Power control for rf impedance matching network
US11398370B2 (en) 2017-07-10 2022-07-26 Reno Technologies, Inc. Semiconductor manufacturing using artificial intelligence
US10727029B2 (en) * 2017-07-10 2020-07-28 Reno Technologies, Inc Impedance matching using independent capacitance and frequency control
US11476091B2 (en) 2017-07-10 2022-10-18 Reno Technologies, Inc. Impedance matching network for diagnosing plasma chamber
US11393659B2 (en) 2017-07-10 2022-07-19 Reno Technologies, Inc. Impedance matching network and method
US11101110B2 (en) 2017-07-10 2021-08-24 Reno Technologies, Inc. Impedance matching network and method
US10714314B1 (en) 2017-07-10 2020-07-14 Reno Technologies, Inc. Impedance matching network and method
US11289307B2 (en) 2017-07-10 2022-03-29 Reno Technologies, Inc. Impedance matching network and method
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
US10536130B2 (en) 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
JP6963097B2 (ja) 2019-04-22 2021-11-05 株式会社日立ハイテク プラズマ処理方法
KR102629845B1 (ko) 2020-06-16 2024-01-29 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US11348761B2 (en) * 2020-09-04 2022-05-31 Tokyo Electron Limited Impedance matching apparatus and control method
KR102709624B1 (ko) 2021-10-21 2024-09-26 주식회사 히타치하이테크 에칭 방법 및 에칭 장치
JP7498369B2 (ja) 2022-04-26 2024-06-11 株式会社日立ハイテク プラズマ処理方法
US12518975B2 (en) 2022-04-28 2026-01-06 Hitachi High-Tech Corporation Etching method
US12020902B2 (en) 2022-07-14 2024-06-25 Tokyo Electron Limited Plasma processing with broadband RF waveforms
CN115696709B (zh) * 2022-12-28 2023-03-21 江苏奥文仪器科技有限公司 监测射频辉光放电光谱仪放电室内等离子体稳定性的装置
CN117970001B (zh) * 2024-02-04 2025-09-09 哈尔滨工业大学 一种sdbd离子风发动机能量损耗的分析方法及系统

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333814A (en) 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
JPS5825475A (ja) * 1981-08-05 1983-02-15 Nec Corp スパツタ装置
JPS58158929A (ja) * 1982-03-17 1983-09-21 Kokusai Electric Co Ltd プラズマ発生装置
JPS60126832A (ja) 1983-12-14 1985-07-06 Hitachi Ltd ドライエツチング方法および装置
US4626312A (en) * 1985-06-24 1986-12-02 The Perkin-Elmer Corporation Plasma etching system for minimizing stray electrical discharges
JPS62111431A (ja) * 1985-11-11 1987-05-22 Hitachi Ltd ドライエツチング装置
JP2775656B2 (ja) * 1991-09-30 1998-07-16 株式会社島津製作所 成膜装置
US5605567A (en) * 1991-12-05 1997-02-25 Weyerhaueser Company Method of producing cellulose dope
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
JP2592217B2 (ja) 1993-11-11 1997-03-19 株式会社フロンテック 高周波マグネトロンプラズマ装置
JP2956494B2 (ja) 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
EP0715334B1 (en) 1994-11-30 1999-04-14 Applied Materials, Inc. Plasma reactors for processing semiconductor wafers
US5892198A (en) 1996-03-29 1999-04-06 Lam Research Corporation Method of and apparatus for electronically controlling r.f. energy supplied to a vacuum plasma processor and memory for same
US5982099A (en) 1996-03-29 1999-11-09 Lam Research Corporation Method of and apparatus for igniting a plasma in an r.f. plasma processor
US5689215A (en) 1996-05-23 1997-11-18 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor
US6041734A (en) * 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US5929717A (en) 1998-01-09 1999-07-27 Lam Research Corporation Method of and apparatus for minimizing plasma instability in an RF processor
JP3310608B2 (ja) * 1998-01-22 2002-08-05 アプライド マテリアルズ インコーポレイテッド スパッタリング装置
US6198616B1 (en) * 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
JP3497091B2 (ja) * 1998-07-23 2004-02-16 名古屋大学長 プラズマ生成用高周波パワーの制御方法、およびプラズマ発生装置
JP2000049216A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp プラズマ処理装置および当該装置で用いられる静電チャック吸着方法
US6222718B1 (en) * 1998-11-12 2001-04-24 Lam Research Corporation Integrated power modules for plasma processing systems
US6265831B1 (en) * 1999-03-31 2001-07-24 Lam Research Corporation Plasma processing method and apparatus with control of rf bias
JP4437347B2 (ja) * 1999-10-14 2010-03-24 キヤノンアネルバ株式会社 前処理エッチング装置及び薄膜作成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101423364B1 (ko) 2007-06-28 2014-07-24 램 리써치 코포레이션 전압/전류 프로브 테스트 배열용 장치 및 방법

Also Published As

Publication number Publication date
JP2004535039A (ja) 2004-11-18
KR20040020912A (ko) 2004-03-09
US6677711B2 (en) 2004-01-13
WO2002101784A1 (en) 2002-12-19
CN1515018A (zh) 2004-07-21
WO2002101784B1 (en) 2004-05-27
TW550978B (en) 2003-09-01
CN1515018B (zh) 2010-10-06
JP4897195B2 (ja) 2012-03-14
US20020185227A1 (en) 2002-12-12

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