CN1515018B - 等离子体处理器 - Google Patents

等离子体处理器 Download PDF

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Publication number
CN1515018B
CN1515018B CN028115635A CN02811563A CN1515018B CN 1515018 B CN1515018 B CN 1515018B CN 028115635 A CN028115635 A CN 028115635A CN 02811563 A CN02811563 A CN 02811563A CN 1515018 B CN1515018 B CN 1515018B
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China
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voltage
ground
impedance
variable
electrode
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Expired - Lifetime
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CN028115635A
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Chinese (zh)
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CN1515018A (zh
Inventor
N·麦克盖瑞尔特
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN028115635A 2001-06-07 2002-06-04 等离子体处理器 Expired - Lifetime CN1515018B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29683201P 2001-06-07 2001-06-07
US60/296,832 2001-06-07
US10/028,312 2001-12-28
US10/028,312 US6677711B2 (en) 2001-06-07 2001-12-28 Plasma processor method and apparatus
PCT/US2002/017386 WO2002101784A1 (en) 2001-06-07 2002-06-04 Plasma processor

Publications (2)

Publication Number Publication Date
CN1515018A CN1515018A (zh) 2004-07-21
CN1515018B true CN1515018B (zh) 2010-10-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN028115635A Expired - Lifetime CN1515018B (zh) 2001-06-07 2002-06-04 等离子体处理器

Country Status (6)

Country Link
US (1) US6677711B2 (enExample)
JP (1) JP4897195B2 (enExample)
KR (1) KR101048635B1 (enExample)
CN (1) CN1515018B (enExample)
TW (1) TW550978B (enExample)
WO (1) WO2002101784A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460790B (zh) * 2011-06-03 2014-11-11 Soo-Hyun Lee 用以產生電感式耦合電漿之裝置與方法

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US7902991B2 (en) * 2006-09-21 2011-03-08 Applied Materials, Inc. Frequency monitoring to detect plasma process abnormality
JP4689586B2 (ja) * 2006-12-06 2011-05-25 太陽誘電株式会社 低歪可変周波数増幅器
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US7649363B2 (en) 2007-06-28 2010-01-19 Lam Research Corporation Method and apparatus for a voltage/current probe test arrangements
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US7970562B2 (en) * 2008-05-07 2011-06-28 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring power
US8324525B2 (en) * 2008-05-29 2012-12-04 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US8357264B2 (en) * 2008-05-29 2013-01-22 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US7967944B2 (en) * 2008-05-29 2011-06-28 Applied Materials, Inc. Method of plasma load impedance tuning by modulation of an unmatched low power RF generator
US8002945B2 (en) * 2008-05-29 2011-08-23 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
US20090294275A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Method of plasma load impedance tuning by modulation of a source power or bias power rf generator
US8018164B2 (en) * 2008-05-29 2011-09-13 Applied Materials, Inc. Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
US8337661B2 (en) * 2008-05-29 2012-12-25 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
US20090297404A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Plasma reactor with high speed plasma impedance tuning by modulation of source power or bias power
US8040068B2 (en) * 2009-02-05 2011-10-18 Mks Instruments, Inc. Radio frequency power control system
US8674844B2 (en) * 2009-03-19 2014-03-18 Applied Materials, Inc. Detecting plasma chamber malfunction
US9275838B2 (en) * 2009-09-02 2016-03-01 Lam Research Corporation Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof
US20110209995A1 (en) * 2010-03-01 2011-09-01 Applied Materials, Inc. Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit
US20120000888A1 (en) * 2010-06-30 2012-01-05 Applied Materials, Inc. Methods and apparatus for radio frequency (rf) plasma processing
KR101151419B1 (ko) 2010-07-30 2012-06-01 주식회사 플라즈마트 Ｒｆ 전력 분배 장치 및 ｒｆ 전력 분배 방법
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
US20130284369A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9620334B2 (en) * 2012-12-17 2017-04-11 Lam Research Corporation Control of etch rate using modeling, feedback and impedance match
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
US9312106B2 (en) * 2013-03-13 2016-04-12 Applied Materials, Inc. Digital phase controller for two-phase operation of a plasma reactor
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9594105B2 (en) * 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US12119206B2 (en) 2015-02-18 2024-10-15 Asm America, Inc. Switching circuit
US11335540B2 (en) 2015-06-29 2022-05-17 Reno Technologies, Inc. Impedance matching network and method
US9876476B2 (en) * 2015-08-18 2018-01-23 Mks Instruments, Inc. Supervisory control of radio frequency (RF) impedance tuning operation
US10187032B2 (en) * 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
CN106856644A (zh) * 2017-01-04 2017-06-16 京东方科技集团股份有限公司 等离子体射流装置
WO2018151920A1 (en) * 2017-02-16 2018-08-23 Applied Materials, Inc. Voltage-current probe for measuring radio-frequency electrical power in a high-temperature environment and method of calibrating the same
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
US12272522B2 (en) 2017-07-10 2025-04-08 Asm America, Inc. Resonant filter for solid state RF impedance matching network
US12334307B2 (en) 2017-07-10 2025-06-17 Asm Ip Holding B.V. Power control for rf impedance matching network
US11398370B2 (en) 2017-07-10 2022-07-26 Reno Technologies, Inc. Semiconductor manufacturing using artificial intelligence
US10727029B2 (en) * 2017-07-10 2020-07-28 Reno Technologies, Inc Impedance matching using independent capacitance and frequency control
US11476091B2 (en) 2017-07-10 2022-10-18 Reno Technologies, Inc. Impedance matching network for diagnosing plasma chamber
US11393659B2 (en) 2017-07-10 2022-07-19 Reno Technologies, Inc. Impedance matching network and method
US11101110B2 (en) 2017-07-10 2021-08-24 Reno Technologies, Inc. Impedance matching network and method
US10714314B1 (en) 2017-07-10 2020-07-14 Reno Technologies, Inc. Impedance matching network and method
US11289307B2 (en) 2017-07-10 2022-03-29 Reno Technologies, Inc. Impedance matching network and method
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
US10536130B2 (en) 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
JP6963097B2 (ja) 2019-04-22 2021-11-05 株式会社日立ハイテク プラズマ処理方法
KR102629845B1 (ko) 2020-06-16 2024-01-29 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US11348761B2 (en) * 2020-09-04 2022-05-31 Tokyo Electron Limited Impedance matching apparatus and control method
KR102709624B1 (ko) 2021-10-21 2024-09-26 주식회사 히타치하이테크 에칭 방법 및 에칭 장치
JP7498369B2 (ja) 2022-04-26 2024-06-11 株式会社日立ハイテク プラズマ処理方法
US12518975B2 (en) 2022-04-28 2026-01-06 Hitachi High-Tech Corporation Etching method
US12020902B2 (en) 2022-07-14 2024-06-25 Tokyo Electron Limited Plasma processing with broadband RF waveforms
CN115696709B (zh) * 2022-12-28 2023-03-21 江苏奥文仪器科技有限公司 监测射频辉光放电光谱仪放电室内等离子体稳定性的装置
CN117970001B (zh) * 2024-02-04 2025-09-09 哈尔滨工业大学 一种sdbd离子风发动机能量损耗的分析方法及系统

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460790B (zh) * 2011-06-03 2014-11-11 Soo-Hyun Lee 用以產生電感式耦合電漿之裝置與方法

Also Published As

Publication number Publication date
JP2004535039A (ja) 2004-11-18
KR20040020912A (ko) 2004-03-09
US6677711B2 (en) 2004-01-13
WO2002101784A1 (en) 2002-12-19
KR101048635B1 (ko) 2011-07-12
CN1515018A (zh) 2004-07-21
WO2002101784B1 (en) 2004-05-27
TW550978B (en) 2003-09-01
JP4897195B2 (ja) 2012-03-14
US20020185227A1 (en) 2002-12-12

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Granted publication date: 20101006