JP4897195B2 - プラズマ処理方法、プラズマ処理装置およびプラズマ処理装置の製造方法 - Google Patents

プラズマ処理方法、プラズマ処理装置およびプラズマ処理装置の製造方法 Download PDF

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JP4897195B2
JP4897195B2 JP2003504434A JP2003504434A JP4897195B2 JP 4897195 B2 JP4897195 B2 JP 4897195B2 JP 2003504434 A JP2003504434 A JP 2003504434A JP 2003504434 A JP2003504434 A JP 2003504434A JP 4897195 B2 JP4897195 B2 JP 4897195B2
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voltage
plasma processing
ground
electrode
current
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JP2004535039A (ja
JP2004535039A5 (enExample
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ニール マクギレイル
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2003504434A 2001-06-07 2002-06-04 プラズマ処理方法、プラズマ処理装置およびプラズマ処理装置の製造方法 Expired - Fee Related JP4897195B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29683201P 2001-06-07 2001-06-07
US60/296,832 2001-06-07
US10/028,312 2001-12-28
US10/028,312 US6677711B2 (en) 2001-06-07 2001-12-28 Plasma processor method and apparatus
PCT/US2002/017386 WO2002101784A1 (en) 2001-06-07 2002-06-04 Plasma processor

Publications (3)

Publication Number Publication Date
JP2004535039A JP2004535039A (ja) 2004-11-18
JP2004535039A5 JP2004535039A5 (enExample) 2008-10-02
JP4897195B2 true JP4897195B2 (ja) 2012-03-14

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JP2003504434A Expired - Fee Related JP4897195B2 (ja) 2001-06-07 2002-06-04 プラズマ処理方法、プラズマ処理装置およびプラズマ処理装置の製造方法

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US (1) US6677711B2 (enExample)
JP (1) JP4897195B2 (enExample)
KR (1) KR101048635B1 (enExample)
CN (1) CN1515018B (enExample)
TW (1) TW550978B (enExample)
WO (1) WO2002101784A1 (enExample)

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US9312106B2 (en) * 2013-03-13 2016-04-12 Applied Materials, Inc. Digital phase controller for two-phase operation of a plasma reactor
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9594105B2 (en) * 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US12119206B2 (en) 2015-02-18 2024-10-15 Asm America, Inc. Switching circuit
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US9876476B2 (en) * 2015-08-18 2018-01-23 Mks Instruments, Inc. Supervisory control of radio frequency (RF) impedance tuning operation
US10187032B2 (en) * 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
CN106856644A (zh) * 2017-01-04 2017-06-16 京东方科技集团股份有限公司 等离子体射流装置
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JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
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JP6963097B2 (ja) 2019-04-22 2021-11-05 株式会社日立ハイテク プラズマ処理方法
KR102629845B1 (ko) 2020-06-16 2024-01-29 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
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JP7498369B2 (ja) 2022-04-26 2024-06-11 株式会社日立ハイテク プラズマ処理方法
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CN115696709B (zh) * 2022-12-28 2023-03-21 江苏奥文仪器科技有限公司 监测射频辉光放电光谱仪放电室内等离子体稳定性的装置
CN117970001B (zh) * 2024-02-04 2025-09-09 哈尔滨工业大学 一种sdbd离子风发动机能量损耗的分析方法及系统

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JPS5825475A (ja) * 1981-08-05 1983-02-15 Nec Corp スパツタ装置
JPS58158929A (ja) * 1982-03-17 1983-09-21 Kokusai Electric Co Ltd プラズマ発生装置
US4622094A (en) * 1983-12-14 1986-11-11 Hitachi, Ltd. Method of controlling dry etching by applying an AC voltage to the workpiece
JPH1030195A (ja) * 1985-06-24 1998-02-03 Lam Res Corp プラズマエッチング装置
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Also Published As

Publication number Publication date
JP2004535039A (ja) 2004-11-18
KR20040020912A (ko) 2004-03-09
US6677711B2 (en) 2004-01-13
WO2002101784A1 (en) 2002-12-19
KR101048635B1 (ko) 2011-07-12
CN1515018A (zh) 2004-07-21
WO2002101784B1 (en) 2004-05-27
TW550978B (en) 2003-09-01
CN1515018B (zh) 2010-10-06
US20020185227A1 (en) 2002-12-12

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