TW535243B - Semiconductor device and method of packaging the same - Google Patents

Semiconductor device and method of packaging the same Download PDF

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Publication number
TW535243B
TW535243B TW91101244A TW91101244A TW535243B TW 535243 B TW535243 B TW 535243B TW 91101244 A TW91101244 A TW 91101244A TW 91101244 A TW91101244 A TW 91101244A TW 535243 B TW535243 B TW 535243B
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Taiwan
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substrate
die
semiconductor device
solder
coupled
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TW91101244A
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English (en)
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Rajeev Joshi
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Fairchild Semiconductor Corpor
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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Chemical & Material Sciences (AREA)
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Description

535243 A7 B7 五、發明説明（1 ) 發明背景 1. 發明領域. 本發明關係一半導體裝置的封裝，及更具體來說，關係 一不需要模鑄體的半導體裝置之封裝。 2. 先前技藝說明
半導體裝置，特別是MOSFET裝置，一般希望很低的封裝電 阻(RDSon)及良好的熱性能。總之，較理想具有簡單快速及 有效方法封裝半導體裝置。因此，在先前技藝中已經發展 許多封裝概念及方法。 裝
線 一種此類封裝概念的一個例子包含一球栅陣列（BGA)。此 種概念包含一源極，閘極及汲極焊球的陣列，以直接連接 印刷電路板(PCB)。這樣需要一凸型晶粒及一焊接框以便用 來造成汲極接觸。另外封裝概念一般稱為鉛模鑄封裝的倒 裝晶片（F.LMP)，包括一模鑄鉛表面固定封裝，其中一凸型 晶粒連接該框的閘極及源極端子。汲極位於晶粒的背面， 在標準板固定處理中，由模鑄物或模鑄體露出及經由焊料 回流連接PCB。其他封裝概念使用銅帶及/或線路黏結技術。 這些先前技藝的概念包含不同組件並可造成複雜的製造 (封裝）程序。 發明概要 本發明提供一半導體裝置包括一基板及一晶粒耦合該基 板。多數個烊球也耦合鄰近該晶粒的基板。當半導體裝置 耦合一印刷電路板時，焊球幾乎與晶粒表面同平面。如此 ，如果半導體裝置耦合一 PCB，不耦合基板的晶粒表面可作 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） A7 B7 五、發明説明（2 為直接沒極連接，而該其4 邊基板及丨干球可作為源極及間極連接 ’如此’該半導體裝置為一 MOSFET裝置。 根據本發明的—特徵，該基板包括—基層，—金屬層及 絶緣層位於該基層及該金屬層之間。 根據本發明的另外特徵，該基層包括一金屬化圖案及金 屬層包括另外金屬化圖案或作為一熱分散器。 根據本發明的進一步特徵，該基板為一金屬陶瓷。 仍根據本發明的另外特徵，該基板包括兩層金屬陶瓷， 促使兩晶粒（矽）固定在相反的表面上。 本發明也提供一種封裝一半導體裝置的方法，該裝置包 括具有一基板及一晶粒。如為M〇SFET裝置，在任何適當的 兒傳導互連的情況下，焊料放在至少一基板及一晶粒上面 且涘日日权倒裝在該基板上面。然後將焊球放在鄰近該晶 知' 的基板上面。 在閱讀下列較佳具體實施例的詳細說明並參考附圖後， 即可明白本發明的其他特徵及優點，其中相似數字代表相 似元件。 圖式簡單說明 圖1為根據本發明的一半導體裝置的平面圖； 圖2為圖1所示半導體裝置沿切線a_a的側視斷面圖； 圖3為根據本發明的另外半導體裝置的平面圖； 圖4為圖3所示半導體裝置沿切線B-B的側視斷面圖；及 圖5為根據本發明的另外具體實施例的側視斷面圖。 特別具體實施例詳細說明 IX 297公釐） 535243
圖1顯示一 MOSFET半導體裝置1〇包括一晶粒u，一基板i2 及:tf*球13。该基板包括一閘極區μ。 如圖2所示，該基板較理想包括一基層2〇及一頂部金屬層 2 1。該基層及頂部金屬層由一絕緣層22隔離，較理想一絕 緣環氧樹脂黏結此二層。該基層材料較理想包括一金屬化 圖案而該頂部金屬層較理想包括另外的金屬化圖案。該金 屬層也作為一熱分散器。 該晶粒較理想使用高溫焊料耦合該基板，但也可使用任 何本技藝已知的其他適合導電互連耦合。焊球放置在鄰近 晶粒的晶粒反面上，及至少一焊球位於該基板的閘極區上 面。 如此，操作時，半導體裝置放置在一印刷電路板上，及 晶粒的表面使用焊料或適當電傳導互連直接耦合pCB，因而 可作為汲極連接。耦合該基板的晶粒表面包括該晶粒的閘 極區及源極區。如此，該基板閘極區的焊球用來耦合該晶 粒閘極區至P CB，而剩餘焊球經由基板耦合該晶粒的源極區 至PCB。因此，該基板的閘極區電隔離該基板的剩餘部份。 一種製造或封裝該種半導體裝置的方法包括放置焊料在 孩基板或晶粒之一的表面上，並將連接該晶粒的倒裝晶片 固疋在孩基板。然後將焊球放置在鄰近該晶粒的基板上面 。較理想的是，接著測試這種組合。然後修整該半導體裝 置並再測試該半導體裝置。 焊球放置的南度導致該半導體裝置耦合一 pcB時，該焊球 幾乎與該晶粒的汲極表面同平面，如此，容許該半導體裝
A7
五、發明説明（4 B7 置平接在PCB上面。 在另外的具體實施例中，焊球並不放置在半導體裝置上 ，而是放置在PCB上面，然後耦合該半導體裝置。 參考圖3，顯示根據本發明的半導體裝置的另一具體實施 例。在本具體實施例中，該基板包括一金屬陶瓷。該基板 材料的範例包括絕緣金屬基板。 在該具體實施例中，該晶粒的曝露表面作為汲極連接 PCB，而該焊球作為閘極及源極連接pCB。 圖3及4顯不裝置的製造方式和上述圖丨及2所示的半導體裝 置相同。 如此，本發明提供一半導體裝置具有改善的裝置散熱性 ，因為孩晶粒的背面直接焊接PCB ,且M〇SFET的源極及閘 極焊接該基板，最好是使用高溫焊料。如此，該晶粒不需 要為凸型晶粒，而需要一可焊接的頂部金屬表面，例如無 電鎳（或電解鎳）具有一金外層。另外，組裝製程可大幅簡 因為/又有涉及專門操作的形狀因素，例如線路黏結， 模k ^邊，修整與成形，及電鍍。另外，因為焊球在設 计製程時可以移自，所以可以改變該+導體配置的佔用面 積。 從圖5可以看出，本發明也容許簡單結合二或更多的晶粒 11 a曰’ b成為一高密度封裝配置（基板12的每側上有一或更多 的晶粒）。如此，可以獲得一簡單的高密度積合方法，而不 必使用傳統的表面固定封裝製造的方法，即是形狀因素無 關處理步驟如，模造，f邊’修整與成形加工。該基板包
兩層，屬陶資由絕緣層隔離或電隔離。如此，該焊球的 义置決定各晶粒的源極及閘極連接。如果希望連接晶粒nb 的汲極至PCB，可使用已知的線路黏結技術。 雖然，，本發明參考特別具體實施例作了說明，可以明瞭 所附申請專利範圍的精神涵蓋所有修改及其相當者。 8-
申請曰期 f八 /' 案 號 091101244 類 別 HL ^ 以上各爛由本局填註） A4 C4 中文說明書替換頁(92年2月） 535243 f !專利説明書 中 文 半導體裝置及其封裝方法 41 名稱 英 文
SEMICONDUCTOR DEVICE AND METHOD OF PACKAGING THE SAME 姓 名 國 籍
印度INDIA 發明 人 住、居所 美國加州庫柏堤諾市考比街10168號 10168 COLBY AVENUE, CUPERTINO, CA 95014, U.S.A. 姓 名 (名稱） 國 籍 美商菲爾卻德半導體公司 FAIRCHILD SEMICONDUCTOR CORPORATION 美國U.S.A. 三、申請人 2表名
美國緬因州南波特蘭市羅寧丘路82號 82 RUNNING HILL ROAD, SOUTH PORTLAND, MAINE 04106, U.S.A. 史帝分C.史裘特 STEPHEN C. SCHOTT 本紙張尺度適用巾國g家轉(cns) Μ規格(MO x 297公釐）

Claims (1)

  1. 535243 一 /曰條 A BCD 第091101244號專利申請案 中文申請專利範圍替換本(92年2月) 穴、申請專利範圍 1♦一種半導體裝置，包括： 一基板； 一晶粒耦合該基板；及 多數個焊球耦合鄰近該晶粒的該基板，如果該半導 體裝置耦合一印刷電路板時，該焊球實質上與該晶粒 一表面同平面。 2. 如申請專利範圍第1項之半導體裝置，其中該基板包括 一基層，一金屬層及一絕緣層位於該基層與該金屬層 之間。 3. 如申請專利範圍第2項之半導體裝置，其中該基層包括 一金屬化圖案及該金屬層包括一第二金屬化圖案。 4·如申請專利範圍第1項之半導體裝置，其中該基層包括 一金屬陶瓷。 5 .如申請專利範圍第4項之半導體裝置，其中該金屬陶資 包括至少一金屬化層。 6. —種封裝一半導體裝置的方法，該方法包括： 提供一基板； 提供一晶粒； 放置焊料在該基板及該晶粒至少其中之一上面； 倒裝該晶粒在該基板上；及 放置焊球在鄰近該晶粒的該基板上面。 7·如申請專利範圍第6項之方法，進一步包括： 測試該晶粒，基板及焊球組合； 修整該基板；及 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐) 535243 8 8 8 8 A B c D 六、申請專利範圍 再測試晶粒’基板及坪球組合。 8. 如申請專利範圍第6項之方法，進一步包括提供一第二 晶粒，放置焊料在該基板及該第二晶粒其中之一上面 ’及搞合該弟二晶粒及該基板。 9. 如申請專利範圍第1項之半導體裝置，進一步包括一第 二晶粒耦合該基板在相對於一第一晶粒耦合表面的表 面上。 10. —種封裝一半導體裝置的方法，該方法包括： 提供一基板； 提供一晶粒； 同時用焊料耦合該晶粒至該基板及放置焊球在鄰近 該晶粒的該基板上面，及 回流該焊料及焊球。 -2- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
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CN1489788A (zh) 2004-04-14
CN100352047C (zh) 2007-11-28
US20030011005A1 (en) 2003-01-16
US20020100962A1 (en) 2002-08-01
JP2004521493A (ja) 2004-07-15
US6953998B2 (en) 2005-10-11
DE10295972B4 (de) 2013-05-16
WO2002061832A1 (en) 2002-08-08
CN100576483C (zh) 2009-12-30
US20050280161A1 (en) 2005-12-22
US7393718B2 (en) 2008-07-01
DE10295972T5 (de) 2004-04-15
US6740541B2 (en) 2004-05-25
US20040164386A1 (en) 2004-08-26
JP2009124176A (ja) 2009-06-04
CN101154607A (zh) 2008-04-02
US6469384B2 (en) 2002-10-22
JP4729244B2 (ja) 2011-07-20

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