TW531849B - Memory-logic semiconductor device - Google Patents

Memory-logic semiconductor device Download PDF

Info

Publication number
TW531849B
TW531849B TW090110312A TW90110312A TW531849B TW 531849 B TW531849 B TW 531849B TW 090110312 A TW090110312 A TW 090110312A TW 90110312 A TW90110312 A TW 90110312A TW 531849 B TW531849 B TW 531849B
Authority
TW
Taiwan
Prior art keywords
gate electrode
source
storage electrode
electrode
semiconductor device
Prior art date
Application number
TW090110312A
Other languages
English (en)
Chinese (zh)
Inventor
Shigetoshi Takeda
Taiji Ema
Peter Bruce Gillingham
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW531849B publication Critical patent/TW531849B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements

Landscapes

  • Semiconductor Memories (AREA)
TW090110312A 2000-05-26 2001-04-30 Memory-logic semiconductor device TW531849B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000155585A JP2001338990A (ja) 2000-05-26 2000-05-26 半導体装置

Publications (1)

Publication Number Publication Date
TW531849B true TW531849B (en) 2003-05-11

Family

ID=18660511

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090110312A TW531849B (en) 2000-05-26 2001-04-30 Memory-logic semiconductor device

Country Status (5)

Country Link
US (1) US6529397B2 (enExample)
EP (1) EP1158529A1 (enExample)
JP (1) JP2001338990A (enExample)
KR (1) KR100704252B1 (enExample)
TW (1) TW531849B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220344909A1 (en) * 2021-04-26 2022-10-27 Lumentum Operations Llc Matrix addressable vertical cavity surface emitting laser array

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100336226C (zh) 2001-12-14 2007-09-05 株式会社日立制作所 半导体器件
US6706635B2 (en) * 2002-06-05 2004-03-16 Texas Instruments Incorporated Innovative method to build a high precision analog capacitor with low voltage coefficient and hysteresis
US6744654B2 (en) * 2002-08-21 2004-06-01 Micron Technology, Inc. High density dynamic ternary-CAM memory architecture
JP4602635B2 (ja) * 2002-10-03 2010-12-22 富士通セミコンダクター株式会社 半導体装置
JP2005032991A (ja) * 2003-07-14 2005-02-03 Renesas Technology Corp 半導体装置
KR100604911B1 (ko) * 2004-10-20 2006-07-28 삼성전자주식회사 하부전극 콘택을 갖는 반도체 메모리 소자 및 그 제조방법
US7714315B2 (en) * 2006-02-07 2010-05-11 Qimonda North America Corp. Thermal isolation of phase change memory cells
TWI469354B (zh) 2008-07-31 2015-01-11 Semiconductor Energy Lab 半導體裝置及其製造方法
US9666719B2 (en) * 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
SG178057A1 (en) * 2009-10-16 2012-03-29 Semiconductor Energy Lab Logic circuit and semiconductor device
US8259518B2 (en) * 2010-06-08 2012-09-04 Sichuan Kiloway Electronics Inc. Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFET
US9287405B2 (en) * 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
KR102358481B1 (ko) * 2017-06-08 2022-02-04 삼성전자주식회사 반도체 소자 및 그의 제조 방법
CN117690864A (zh) * 2023-11-01 2024-03-12 武汉新芯集成电路制造有限公司 一种存储器件的制造方法及存储器件

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US4247919A (en) 1979-06-15 1981-01-27 Texas Instruments Incorporated Low power quasi-static storage cell
US5196910A (en) 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
US4791606A (en) 1987-09-01 1988-12-13 Triad Semiconductors International Bv High density CMOS dynamic CAM cell
KR100212098B1 (ko) 1987-09-19 1999-08-02 가나이 쓰도무 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법
US5346834A (en) * 1988-11-21 1994-09-13 Hitachi, Ltd. Method for manufacturing a semiconductor device and a semiconductor memory device
JPH088342B2 (ja) * 1989-11-27 1996-01-29 三菱電機株式会社 半導体集積回路装置
US5146300A (en) 1989-11-27 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having improved stacked capacitor and manufacturing method therefor
JPH0669449A (ja) 1992-08-18 1994-03-11 Sony Corp ダイナミックｒａｍの配線構造およびその製造方法
US5432356A (en) * 1993-04-02 1995-07-11 Fujitsu Limited Semiconductor heterojunction floating layer memory device and method for storing information in the same
JP2836596B2 (ja) 1996-08-02 1998-12-14 日本電気株式会社 連想メモリ
US5949696A (en) 1997-06-30 1999-09-07 Cypress Semiconductor Corporation Differential dynamic content addressable memory and high speed network address filtering
JP3914618B2 (ja) * 1997-09-24 2007-05-16 エルピーダメモリ株式会社 半導体集積回路装置
JPH11111974A (ja) * 1997-09-30 1999-04-23 Matsushita Electron Corp 半導体装置およびその製造方法
US6072711A (en) * 1997-12-12 2000-06-06 Lg Semicon Co., Ltd. Ferroelectric memory device without a separate cell plate line and method of making the same
JPH11224495A (ja) * 1998-02-05 1999-08-17 Hitachi Ltd 半導体集積回路装置
JPH11243180A (ja) * 1998-02-25 1999-09-07 Sony Corp 半導体装置の製造方法
JPH11274321A (ja) * 1998-03-25 1999-10-08 Citizen Watch Co Ltd メモリ素子の構造
JP3166761B2 (ja) 1998-11-24 2001-05-14 トヨタ車体株式会社 貨物車両のプラットフォーム支持装置
CA2266062C (en) * 1999-03-31 2004-03-30 Peter Gillingham Dynamic content addressable memory cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220344909A1 (en) * 2021-04-26 2022-10-27 Lumentum Operations Llc Matrix addressable vertical cavity surface emitting laser array
US12308618B2 (en) * 2021-04-26 2025-05-20 Lumentum Operations Llc Matrix addressable vertical cavity surface emitting laser array

Also Published As

Publication number Publication date
EP1158529A1 (en) 2001-11-28
US6529397B2 (en) 2003-03-04
KR100704252B1 (ko) 2007-04-06
KR20010107522A (ko) 2001-12-07
JP2001338990A (ja) 2001-12-07
US20010046151A1 (en) 2001-11-29

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MM4A Annulment or lapse of patent due to non-payment of fees