TW521426B - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

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Publication number
TW521426B
TW521426B TW090131068A TW90131068A TW521426B TW 521426 B TW521426 B TW 521426B TW 090131068 A TW090131068 A TW 090131068A TW 90131068 A TW90131068 A TW 90131068A TW 521426 B TW521426 B TW 521426B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
layer
item
wiring
Prior art date
Application number
TW090131068A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshiaki Asao
Hiroshi Ito
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW521426B publication Critical patent/TW521426B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
TW090131068A 2000-12-27 2001-12-14 Semiconductor memory device TW521426B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000399223 2000-12-27
JP2001373071A JP2002270790A (ja) 2000-12-27 2001-12-06 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW521426B true TW521426B (en) 2003-02-21

Family

ID=26606944

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090131068A TW521426B (en) 2000-12-27 2001-12-14 Semiconductor memory device

Country Status (5)

Country Link
US (1) US6661689B2 (https=)
JP (1) JP2002270790A (https=)
KR (1) KR100431483B1 (https=)
CN (1) CN1244154C (https=)
TW (1) TW521426B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4656720B2 (ja) * 2000-09-25 2011-03-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3808799B2 (ja) 2002-05-15 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
AU2003243244A1 (en) * 2002-05-16 2003-12-02 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US7042749B2 (en) * 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US6801450B2 (en) * 2002-05-22 2004-10-05 Hewlett-Packard Development Company, L.P. Memory cell isolation
JP4322481B2 (ja) * 2002-08-12 2009-09-02 株式会社東芝 半導体集積回路装置
JP3906139B2 (ja) * 2002-10-16 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP4290494B2 (ja) * 2003-07-08 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
US7166881B2 (en) * 2003-10-13 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-sensing level MRAM structures
KR100527536B1 (ko) * 2003-12-24 2005-11-09 주식회사 하이닉스반도체 마그네틱 램
US7884403B2 (en) 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
US6946698B1 (en) 2004-04-02 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having low-k inter-metal dielectric
US7099176B2 (en) * 2004-04-19 2006-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Non-orthogonal write line structure in MRAM
US7265053B2 (en) * 2004-04-26 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Trench photolithography rework for removal of photoresist residue
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
US7170775B2 (en) * 2005-01-06 2007-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell with reduced write current
JP2007317824A (ja) 2006-05-25 2007-12-06 Tdk Corp 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
JP4384137B2 (ja) 2006-06-14 2009-12-16 Ｔｄｋ株式会社 Ｃｐｐ−ｇｍｒヘッド用の磁界検出素子の製造方法、ｃｐｐ−ｇｍｒヘッド用の磁界検出素子、積層体、ウエハ、ヘッドジンバルアセンブリ、およびハードディスク装置
JP5412640B2 (ja) 2008-11-13 2014-02-12 ルネサスエレクトロニクス株式会社 磁気メモリ装置
CN105449099B (zh) * 2015-10-15 2018-04-06 上海磁宇信息科技有限公司 交叉矩阵列式磁性随机存储器及其读写方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3392657B2 (ja) * 1996-09-26 2003-03-31 株式会社東芝 半導体記憶装置
JP4124844B2 (ja) 1997-10-02 2008-07-23 キヤノン株式会社 磁気薄膜メモリ
JP3593472B2 (ja) * 1998-06-30 2004-11-24 株式会社東芝 磁気素子とそれを用いた磁気メモリおよび磁気センサ
JP2000132961A (ja) * 1998-10-23 2000-05-12 Canon Inc 磁気薄膜メモリ、磁気薄膜メモリの読出し方法、及び磁気薄膜メモリの書込み方法
JP3803503B2 (ja) 1999-04-30 2006-08-02 日本電気株式会社 磁気ランダムアクセスメモリ回路
JP2001217398A (ja) 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置
DE10020128A1 (de) 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP4477199B2 (ja) 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
DE10053965A1 (de) * 2000-10-31 2002-06-20 Infineon Technologies Ag Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung
JP2002216468A (ja) * 2000-11-08 2002-08-02 Canon Inc 半導体記憶装置
JP4637388B2 (ja) * 2001-03-23 2011-02-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2003016777A (ja) * 2001-06-28 2003-01-17 Mitsubishi Electric Corp 薄膜磁性体記憶装置

Also Published As

Publication number Publication date
US6661689B2 (en) 2003-12-09
KR100431483B1 (ko) 2004-05-14
US20020080641A1 (en) 2002-06-27
CN1363955A (zh) 2002-08-14
CN1244154C (zh) 2006-03-01
JP2002270790A (ja) 2002-09-20
KR20020053752A (ko) 2002-07-05

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees