TW502451B - Semiconductor memory and method for fabrication the same - Google Patents
Semiconductor memory and method for fabrication the same Download PDFInfo
- Publication number
- TW502451B TW502451B TW090121501A TW90121501A TW502451B TW 502451 B TW502451 B TW 502451B TW 090121501 A TW090121501 A TW 090121501A TW 90121501 A TW90121501 A TW 90121501A TW 502451 B TW502451 B TW 502451B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate electrode
- insulating film
- active region
- region
- film
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000262160A JP3686318B2 (ja) | 2000-08-31 | 2000-08-31 | 半導体記憶装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW502451B true TW502451B (en) | 2002-09-11 |
Family
ID=18749880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090121501A TW502451B (en) | 2000-08-31 | 2001-08-30 | Semiconductor memory and method for fabrication the same |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6558997B2 (enExample) |
| JP (1) | JP3686318B2 (enExample) |
| TW (1) | TW502451B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6770933B2 (en) * | 2002-12-11 | 2004-08-03 | Texas Instruments Incorporated | Single poly eeprom with improved coupling ratio |
| JP4541220B2 (ja) * | 2005-04-13 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| JP5086626B2 (ja) * | 2006-12-15 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| KR20100076227A (ko) * | 2008-12-26 | 2010-07-06 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조 방법 |
| RU2641916C2 (ru) | 2012-10-02 | 2018-01-23 | Байер Кропсайенс Аг | Гетероциклические соединения в качестве пестицидов |
| US11101277B2 (en) * | 2019-03-20 | 2021-08-24 | Greenliant Ip, Llc. | Process for manufacturing NOR memory cell with vertical floating gate |
| KR20250102644A (ko) | 2023-12-28 | 2025-07-07 | 엘티메탈 주식회사 | 다층구조 애노드 다공막 제조방법 및 이를 이용하여 제조된 애노드 다공막 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3059442B2 (ja) * | 1988-11-09 | 2000-07-04 | 株式会社日立製作所 | 半導体記憶装置 |
| JP2664685B2 (ja) * | 1987-07-31 | 1997-10-15 | 株式会社東芝 | 半導体装置の製造方法 |
| US5587332A (en) * | 1992-09-01 | 1996-12-24 | Vlsi Technology, Inc. | Method of making flash memory cell |
| JPH06151780A (ja) * | 1992-11-12 | 1994-05-31 | Nippon Precision Circuits Kk | 半導体装置 |
| SE515560C2 (sv) * | 1995-04-03 | 2001-08-27 | Ericsson Telefon Ab L M | Optiskt nät samt anordning och förfarande i detta |
| JP3149937B2 (ja) * | 1997-12-08 | 2001-03-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US6051860A (en) * | 1998-01-16 | 2000-04-18 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit |
| JP3161408B2 (ja) | 1998-03-03 | 2001-04-25 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP3175705B2 (ja) * | 1998-09-18 | 2001-06-11 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP4212178B2 (ja) * | 1999-03-12 | 2009-01-21 | 株式会社東芝 | 半導体集積回路の製造方法 |
-
2000
- 2000-08-31 JP JP2000262160A patent/JP3686318B2/ja not_active Expired - Fee Related
-
2001
- 2001-08-30 TW TW090121501A patent/TW502451B/zh not_active IP Right Cessation
- 2001-08-31 US US09/942,948 patent/US6558997B2/en not_active Expired - Lifetime
-
2003
- 2003-02-14 US US10/366,481 patent/US6791139B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6791139B2 (en) | 2004-09-14 |
| US20030116789A1 (en) | 2003-06-26 |
| US20020031018A1 (en) | 2002-03-14 |
| JP3686318B2 (ja) | 2005-08-24 |
| JP2002076149A (ja) | 2002-03-15 |
| US6558997B2 (en) | 2003-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |