TW498420B - Hot plate and manufacture method of semiconductor device - Google Patents

Hot plate and manufacture method of semiconductor device Download PDF

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Publication number
TW498420B
TW498420B TW090116747A TW90116747A TW498420B TW 498420 B TW498420 B TW 498420B TW 090116747 A TW090116747 A TW 090116747A TW 90116747 A TW90116747 A TW 90116747A TW 498420 B TW498420 B TW 498420B
Authority
TW
Taiwan
Prior art keywords
fixed
electrode
hot plate
aforementioned
plate body
Prior art date
Application number
TW090116747A
Other languages
English (en)
Chinese (zh)
Inventor
Tomio Katata
Junichi Wada
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW498420B publication Critical patent/TW498420B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW090116747A 2000-07-10 2001-07-09 Hot plate and manufacture method of semiconductor device TW498420B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000208355A JP2002026113A (ja) 2000-07-10 2000-07-10 ホットプレート及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW498420B true TW498420B (en) 2002-08-11

Family

ID=18704947

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090116747A TW498420B (en) 2000-07-10 2001-07-09 Hot plate and manufacture method of semiconductor device

Country Status (5)

Country Link
US (1) US6500686B2 (https=)
JP (1) JP2002026113A (https=)
KR (1) KR100437977B1 (https=)
CN (1) CN1197125C (https=)
TW (1) TW498420B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456688B (zh) * 2011-08-05 2014-10-11 Advanced Micro Fab Equip Inc 一種易於釋放晶片的靜電吸盤結構及方法

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
JP2003115442A (ja) * 2001-10-04 2003-04-18 Nikon Corp 荷電粒子線露光装置におけるレチクル又はウエハの静電チャック方法
US6734117B2 (en) * 2002-03-12 2004-05-11 Nikon Corporation Periodic clamping method and apparatus to reduce thermal stress in a wafer
JP2004047912A (ja) * 2002-07-16 2004-02-12 Ulvac Japan Ltd 吸着装置及び真空処理装置
DE60237173D1 (de) * 2002-12-26 2010-09-09 Mitsubishi Heavy Ind Ltd Elektrostatisches futter
US7430104B2 (en) * 2003-03-11 2008-09-30 Appiled Materials, Inc. Electrostatic chuck for wafer metrology and inspection equipment
US20040229477A1 (en) * 2003-05-13 2004-11-18 Daniel Timothy J. Apparatus and method for producing a <111> orientation aluminum film for an integrated circuit device
JP4684222B2 (ja) * 2004-03-19 2011-05-18 株式会社クリエイティブ テクノロジー 双極型静電チャック
CN100470755C (zh) * 2004-03-19 2009-03-18 创意科技股份有限公司 双极型静电吸盘
US7457097B2 (en) * 2004-07-27 2008-11-25 International Business Machines Corporation Pressure assisted wafer holding apparatus and control method
JP4744112B2 (ja) * 2004-08-23 2011-08-10 大日本スクリーン製造株式会社 熱処理装置
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
WO2007007674A1 (ja) * 2005-07-08 2007-01-18 Creative Technology Corporation 静電チャック及び静電チャック用の電極シート
KR101312292B1 (ko) * 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
KR101295776B1 (ko) * 2007-08-02 2013-08-12 삼성전자주식회사 직류 및 교류 전압들을 교대로 사용하는 웨이퍼의 디척킹방법 및 이를 채택하는 반도체 소자의 제조 장치
CN101916738B (zh) * 2010-07-08 2013-07-17 中微半导体设备(上海)有限公司 一种易于释放晶片的静电吸盘结构及方法
US8840754B2 (en) * 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
US20120227886A1 (en) * 2011-03-10 2012-09-13 Taipei Semiconductor Manufacturing Company, Ltd. Substrate Assembly Carrier Using Electrostatic Force
JP5781803B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 温度制御方法及びプラズマ処理システム
JP2012248613A (ja) * 2011-05-26 2012-12-13 Elpida Memory Inc 半導体装置の製造方法
JP6202720B2 (ja) * 2013-03-29 2017-09-27 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
DE102013113048A1 (de) * 2013-11-26 2015-05-28 Aixtron Se Heizvorrichtung für einen Suszeptor eines CVD-Reaktors
US9570272B2 (en) * 2015-03-31 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
US20170047867A1 (en) * 2015-08-12 2017-02-16 Applied Materials, Inc. Electrostatic chuck with electrostatic fluid seal for containing backside gas
TWI640059B (zh) * 2016-01-19 2018-11-01 Intevac, Inc. 供基板加工使用的圖形化吸盤
CN105919721A (zh) * 2016-04-22 2016-09-07 济南圣泉集团股份有限公司 一种发热贴
KR20180032893A (ko) * 2016-09-23 2018-04-02 고등기술연구원연구조합 가변식 압력검출매트
KR102644272B1 (ko) * 2016-10-31 2024-03-06 삼성전자주식회사 정전척 어셈블리
US10497667B2 (en) * 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control
JP6627936B1 (ja) * 2018-08-30 2020-01-08 住友大阪セメント株式会社 静電チャック装置および静電チャック装置の製造方法
KR102085446B1 (ko) * 2018-09-21 2020-03-05 캐논 톡키 가부시키가이샤 정전척 시스템, 성막 장치, 피흡착체 분리방법, 성막 방법 및 전자 디바이스의 제조방법
KR102650613B1 (ko) * 2018-10-30 2024-03-21 캐논 톡키 가부시키가이샤 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR102661368B1 (ko) * 2018-12-07 2024-04-25 캐논 톡키 가부시키가이샤 정전척, 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조 방법
CN113574652B (zh) 2019-03-18 2023-09-01 日本碍子株式会社 静电卡盘
US11417557B2 (en) * 2020-12-15 2022-08-16 Entegris, Inc. Spiraling polyphase electrodes for electrostatic chuck
JP7585935B2 (ja) * 2021-03-30 2024-11-19 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
US11929278B2 (en) * 2021-05-19 2024-03-12 Applied Materials, Inc. Low impedance current path for edge non-uniformity tuning

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03180049A (ja) * 1989-12-08 1991-08-06 Sumitomo Electric Ind Ltd 半導体装置のピックアップ方法
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
JPH09129716A (ja) 1995-11-02 1997-05-16 Hitachi Ltd 静電吸着装置とその製造方法、ウエハ処理方法
JPH10151516A (ja) * 1996-11-22 1998-06-09 Nikon Corp 研磨皿への溝加工方法
US5880923A (en) * 1997-06-09 1999-03-09 Applied Materials Inc. Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system
JP2973982B2 (ja) * 1997-07-18 1999-11-08 日本電気株式会社 電子部品の成形端子の画像検査方法及びチップ型電子部品

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456688B (zh) * 2011-08-05 2014-10-11 Advanced Micro Fab Equip Inc 一種易於釋放晶片的靜電吸盤結構及方法

Also Published As

Publication number Publication date
US20020006680A1 (en) 2002-01-17
US6500686B2 (en) 2002-12-31
KR100437977B1 (ko) 2004-07-02
JP2002026113A (ja) 2002-01-25
CN1197125C (zh) 2005-04-13
KR20020005986A (ko) 2002-01-18
CN1335640A (zh) 2002-02-13

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