TW480347B - Microlithographic reduction objective, projection exposure equipment and process - Google Patents
Microlithographic reduction objective, projection exposure equipment and process Download PDFInfo
- Publication number
- TW480347B TW480347B TW088119509A TW88119509A TW480347B TW 480347 B TW480347 B TW 480347B TW 088119509 A TW088119509 A TW 088119509A TW 88119509 A TW88119509 A TW 88119509A TW 480347 B TW480347 B TW 480347B
- Authority
- TW
- Taiwan
- Prior art keywords
- lens
- projection
- lenses
- item
- scope
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 7
- 230000009467 reduction Effects 0.000 title description 3
- 230000003287 optical effect Effects 0.000 claims description 21
- 230000005499 meniscus Effects 0.000 claims description 17
- 238000005286 illumination Methods 0.000 claims description 15
- 230000002079 cooperative effect Effects 0.000 claims description 14
- 238000007639 printing Methods 0.000 claims description 13
- 210000001015 abdomen Anatomy 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000001393 microlithography Methods 0.000 claims description 7
- 230000004075 alteration Effects 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 210000001747 pupil Anatomy 0.000 description 4
- 241000022563 Rema Species 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 244000284230 Fuirena umbellata Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 210000003254 palate Anatomy 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19855108A DE19855108A1 (de) | 1998-11-30 | 1998-11-30 | Mikrolithographisches Reduktionsobjektiv, Projektionsbelichtungsanlage und -Verfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW480347B true TW480347B (en) | 2002-03-21 |
Family
ID=7889445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088119509A TW480347B (en) | 1998-11-30 | 1999-11-09 | Microlithographic reduction objective, projection exposure equipment and process |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6349005B1 (enExample) |
| EP (2) | EP1006389A3 (enExample) |
| JP (1) | JP2000171706A (enExample) |
| KR (1) | KR100671317B1 (enExample) |
| DE (1) | DE19855108A1 (enExample) |
| TW (1) | TW480347B (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1195095A (ja) | 1997-09-22 | 1999-04-09 | Nikon Corp | 投影光学系 |
| US6700645B1 (en) | 1998-01-22 | 2004-03-02 | Nikon Corporation | Projection optical system and exposure apparatus and method |
| US6635914B2 (en) * | 2000-09-08 | 2003-10-21 | Axon Technologies Corp. | Microelectronic programmable device and methods of forming and programming the same |
| WO2001023933A1 (en) | 1999-09-29 | 2001-04-05 | Nikon Corporation | Projection optical system |
| EP1139138A4 (en) | 1999-09-29 | 2006-03-08 | Nikon Corp | PROJECTION EXPOSURE PROCESS, DEVICE AND OPTICAL PROJECTION SYSTEM |
| EP1094350A3 (en) * | 1999-10-21 | 2001-08-16 | Carl Zeiss | Optical projection lens system |
| US6590715B2 (en) * | 1999-12-21 | 2003-07-08 | Carl-Zeiss-Stiftung | Optical projection system |
| JP2001343582A (ja) * | 2000-05-30 | 2001-12-14 | Nikon Corp | 投影光学系、当該投影光学系を備えた露光装置、及び当該露光装置を用いたマイクロデバイスの製造方法 |
| JP3413160B2 (ja) * | 2000-06-15 | 2003-06-03 | キヤノン株式会社 | 照明装置及びそれを用いた走査型露光装置 |
| DE10064685A1 (de) * | 2000-12-22 | 2002-07-04 | Zeiss Carl | Lithographieobjektiv mit einer ersten Linsengruppe, bestehend ausschließlich aus Linsen positiver Brechkraft |
| EP1344112A2 (de) * | 2000-12-22 | 2003-09-17 | Carl Zeiss SMT AG | Projektionsobjektiv |
| JP2002244034A (ja) | 2001-02-21 | 2002-08-28 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
| JP2002323652A (ja) | 2001-02-23 | 2002-11-08 | Nikon Corp | 投影光学系,該投影光学系を備えた投影露光装置および投影露光方法 |
| JP2002323653A (ja) | 2001-02-23 | 2002-11-08 | Nikon Corp | 投影光学系,投影露光装置および投影露光方法 |
| DE10138847A1 (de) * | 2001-08-15 | 2003-02-27 | Zeiss Carl | Blende für eine Integratoreinheit |
| DE10143385C2 (de) * | 2001-09-05 | 2003-07-17 | Zeiss Carl | Projektionsbelichtungsanlage |
| US7190527B2 (en) | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
| JP2005519332A (ja) * | 2002-03-01 | 2005-06-30 | カール・ツアイス・エスエムテイ・アーゲー | 屈折型投影対物レンズ |
| DE10229249A1 (de) | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
| EP1481286A2 (de) * | 2002-03-01 | 2004-12-01 | Carl Zeiss SMT AG | Refraktives projektionsobjektiv mit einer taille |
| US7154676B2 (en) * | 2002-03-01 | 2006-12-26 | Carl Zeiss Smt A.G. | Very-high aperture projection objective |
| DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| DE10221386A1 (de) | 2002-05-14 | 2003-11-27 | Zeiss Carl Smt Ag | Projektionsbelichtungssystem |
| US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
| EP1697798A2 (en) | 2003-12-15 | 2006-09-06 | Carl Zeiss SMT AG | Projection objective having a high aperture and a planar end surface |
| US20080151364A1 (en) | 2004-01-14 | 2008-06-26 | Carl Zeiss Smt Ag | Catadioptric projection objective |
| KR101213831B1 (ko) | 2004-05-17 | 2012-12-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| CN100370313C (zh) * | 2005-05-20 | 2008-02-20 | 清华大学 | 傅里叶变换光学系统及体全息存储傅里叶变换光学系统 |
| US7952803B2 (en) | 2006-05-15 | 2011-05-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102008001497A1 (de) | 2007-05-07 | 2008-11-13 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Halbleiterlithographie und Subsystem einer Projektionsbelichtungsanlage |
| CN101587230B (zh) * | 2009-04-09 | 2010-12-29 | 上海微电子装备有限公司 | 一种投影物镜 |
| CN102486569B (zh) | 2010-12-01 | 2014-06-18 | 上海微电子装备有限公司 | 一种投影物镜系统 |
| CN102540416B (zh) * | 2010-12-10 | 2014-09-17 | 上海微电子装备有限公司 | 大视场大工作距投影光刻物镜 |
| CN102540415B (zh) * | 2010-12-10 | 2014-06-18 | 上海微电子装备有限公司 | 一种投影光刻物镜 |
| CN102981249B (zh) * | 2012-09-21 | 2015-01-28 | 中国科学院光电技术研究所 | 一种投影光学系统 |
| AU2015401762B2 (en) | 2015-07-07 | 2019-03-14 | Colgate-Palmolive Company | Oral care implement and monofilament bristle for use with the same |
| CN109581622B (zh) * | 2017-09-29 | 2020-12-04 | 上海微电子装备(集团)股份有限公司 | 一种投影物镜 |
| CN115542675B (zh) * | 2021-06-30 | 2025-08-12 | 上海微电子装备(集团)股份有限公司 | 投影光刻物镜及光刻机 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US337647A (en) | 1886-03-09 | Band-saw mill | ||
| DD299017A7 (de) | 1988-09-02 | 1992-03-26 | Jenoptik Carl Zeiss Jena Gmbh,De | Projektionsobjektiv |
| US5105075A (en) | 1988-09-19 | 1992-04-14 | Canon Kabushiki Kaisha | Projection exposure apparatus |
| SU1659955A1 (ru) | 1989-07-31 | 1991-06-30 | Конструкторское бюро точного электронного машиностроения | Проекционный объектив с увеличением - 1/5 @ |
| US5469299A (en) * | 1990-05-15 | 1995-11-21 | Olympus Optical Co., Ltd. | Objective lens system |
| JP3041939B2 (ja) | 1990-10-22 | 2000-05-15 | 株式会社ニコン | 投影レンズ系 |
| DE4124311A1 (de) | 1991-07-23 | 1993-01-28 | Zeiss Carl Fa | Anordnung zur kohaerenzreduktion und strahlformung eines laserstrahls |
| DE19520563A1 (de) | 1995-06-06 | 1996-12-12 | Zeiss Carl Fa | Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät |
| US6285443B1 (en) | 1993-12-13 | 2001-09-04 | Carl-Zeiss-Stiftung | Illuminating arrangement for a projection microlithographic apparatus |
| ES1027924Y (es) | 1994-05-06 | 1995-04-01 | Medina Manuel Sierra | Chaleco de seguridad autoinchable para motoristas. |
| DE4421053A1 (de) | 1994-06-17 | 1995-12-21 | Zeiss Carl Fa | Beleuchtungseinrichtung |
| EP0687956B2 (de) | 1994-06-17 | 2005-11-23 | Carl Zeiss SMT AG | Beleuchtungseinrichtung |
| JPH08179204A (ja) | 1994-11-10 | 1996-07-12 | Nikon Corp | 投影光学系及び投影露光装置 |
| JP3500745B2 (ja) | 1994-12-14 | 2004-02-23 | 株式会社ニコン | 投影光学系、投影露光装置及び投影露光方法 |
| JP3454390B2 (ja) | 1995-01-06 | 2003-10-06 | 株式会社ニコン | 投影光学系、投影露光装置及び投影露光方法 |
| JP3819048B2 (ja) | 1995-03-15 | 2006-09-06 | 株式会社ニコン | 投影光学系及びそれを備えた露光装置並びに露光方法 |
| JP3402850B2 (ja) | 1995-05-09 | 2003-05-06 | キヤノン株式会社 | 投影露光装置及びそれを用いたデバイスの製造方法 |
| JP3624973B2 (ja) | 1995-10-12 | 2005-03-02 | 株式会社ニコン | 投影光学系 |
| DE19548805A1 (de) * | 1995-12-27 | 1997-07-03 | Zeiss Carl Fa | REMA-Objektiv für Mikrolithographie-Projektionsbelichtungsanlagen |
| JP3750123B2 (ja) | 1996-04-25 | 2006-03-01 | 株式会社ニコン | 投影光学系 |
| JPH1048517A (ja) * | 1996-08-07 | 1998-02-20 | Nikon Corp | 投影光学系 |
| JPH1079345A (ja) | 1996-09-04 | 1998-03-24 | Nikon Corp | 投影光学系及び露光装置 |
| US5852490A (en) * | 1996-09-30 | 1998-12-22 | Nikon Corporation | Projection exposure method and apparatus |
| DE19653983A1 (de) * | 1996-12-21 | 1998-06-25 | Zeiss Carl Fa | REMA-Objektiv für Mikrolithographie-Projektionsbelichtungsanlagen |
| DE19818444A1 (de) * | 1997-04-25 | 1998-10-29 | Nikon Corp | Abbildungsoptik, Projektionsoptikvorrichtung und Projektionsbelichtungsverfahren |
| JP3925576B2 (ja) * | 1997-07-24 | 2007-06-06 | 株式会社ニコン | 投影光学系、該光学系を備えた露光装置、及び該装置を用いたデバイスの製造方法 |
| JPH11133301A (ja) * | 1997-08-29 | 1999-05-21 | Nikon Corp | 投影光学系、露光装置及び半導体デバイスの製造方法 |
| JPH1195095A (ja) * | 1997-09-22 | 1999-04-09 | Nikon Corp | 投影光学系 |
| JPH11214293A (ja) * | 1998-01-22 | 1999-08-06 | Nikon Corp | 投影光学系及び該光学系を備えた露光装置並びにデバイス製造方法 |
| JP2000056219A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影光学系 |
| JP2000066075A (ja) * | 1998-08-17 | 2000-03-03 | Nikon Corp | 光学系及びその製造方法、並びに前記光学系を備えた露光装置 |
| JP2000121933A (ja) * | 1998-10-13 | 2000-04-28 | Nikon Corp | 投影光学系及びそれを備えた露光装置並びにデバイス製造方法 |
-
1998
- 1998-11-30 DE DE19855108A patent/DE19855108A1/de not_active Withdrawn
-
1999
- 1999-09-14 KR KR1019990039313A patent/KR100671317B1/ko not_active Expired - Fee Related
- 1999-10-12 US US09/416,105 patent/US6349005B1/en not_active Expired - Lifetime
- 1999-10-23 EP EP99121205A patent/EP1006389A3/de not_active Ceased
- 1999-10-23 EP EP06003699A patent/EP1686405A1/de not_active Withdrawn
- 1999-11-09 JP JP11317966A patent/JP2000171706A/ja active Pending
- 1999-11-09 TW TW088119509A patent/TW480347B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1686405A1 (de) | 2006-08-02 |
| KR20000034926A (ko) | 2000-06-26 |
| JP2000171706A (ja) | 2000-06-23 |
| EP1006389A2 (de) | 2000-06-07 |
| EP1006389A3 (de) | 2002-03-20 |
| DE19855108A1 (de) | 2000-05-31 |
| KR100671317B1 (ko) | 2007-01-18 |
| US6349005B1 (en) | 2002-02-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |