TW473864B - Sidewall polymer forming gas additives for etching processes - Google Patents
Sidewall polymer forming gas additives for etching processesInfo
- Publication number
- TW473864B TW473864B TW089115644A TW89115644A TW473864B TW 473864 B TW473864 B TW 473864B TW 089115644 A TW089115644 A TW 089115644A TW 89115644 A TW89115644 A TW 89115644A TW 473864 B TW473864 B TW 473864B
- Authority
- TW
- Taiwan
- Prior art keywords
- species
- forming gas
- etching processes
- polymer forming
- sidewall polymer
- Prior art date
Links
- 239000000654 additive Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 150000001722 carbon compounds Chemical class 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 2
- 239000011737 fluorine Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/366,509 US6583065B1 (en) | 1999-08-03 | 1999-08-03 | Sidewall polymer forming gas additives for etching processes |
Publications (1)
Publication Number | Publication Date |
---|---|
TW473864B true TW473864B (en) | 2002-01-21 |
Family
ID=23443322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089115644A TW473864B (en) | 1999-08-03 | 2000-08-08 | Sidewall polymer forming gas additives for etching processes |
Country Status (6)
Country | Link |
---|---|
US (1) | US6583065B1 (zh) |
EP (1) | EP1208588A1 (zh) |
JP (1) | JP2003506866A (zh) |
KR (1) | KR20020027520A (zh) |
TW (1) | TW473864B (zh) |
WO (1) | WO2001009934A1 (zh) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
KR100603844B1 (ko) * | 1999-08-26 | 2006-07-24 | 엘지.필립스 엘시디 주식회사 | 액정표시소자의 화소전극의 제조방법. |
JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4118485B2 (ja) * | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7071037B2 (en) * | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6743727B2 (en) * | 2001-06-05 | 2004-06-01 | International Business Machines Corporation | Method of etching high aspect ratio openings |
US7125496B2 (en) * | 2001-06-28 | 2006-10-24 | Hynix Semiconductor Inc. | Etching method using photoresist etch barrier |
US6960416B2 (en) | 2002-03-01 | 2005-11-01 | Applied Materials, Inc. | Method and apparatus for controlling etch processes during fabrication of semiconductor devices |
US6759340B2 (en) * | 2002-05-09 | 2004-07-06 | Padmapani C. Nallan | Method of etching a trench in a silicon-on-insulator (SOI) structure |
KR20040012451A (ko) * | 2002-05-14 | 2004-02-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 포토리소그래픽 레티클을 에칭하는 방법 |
US6924088B2 (en) | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method and system for realtime CD microloading control |
US6875559B2 (en) * | 2002-08-29 | 2005-04-05 | Micron Technology, Inc. | Method of etching materials patterned with a single layer 193nm resist |
US6886573B2 (en) * | 2002-09-06 | 2005-05-03 | Air Products And Chemicals, Inc. | Plasma cleaning gas with lower global warming potential than SF6 |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US7622051B1 (en) * | 2003-03-27 | 2009-11-24 | Lam Research Corporation | Methods for critical dimension control during plasma etching |
US6911399B2 (en) | 2003-09-19 | 2005-06-28 | Applied Materials, Inc. | Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition |
US7291550B2 (en) * | 2004-02-13 | 2007-11-06 | Chartered Semiconductor Manufacturing Ltd. | Method to form a contact hole |
JP2005276931A (ja) * | 2004-03-23 | 2005-10-06 | Toshiba Corp | 半導体装置およびその製造方法 |
WO2006037151A2 (en) * | 2004-10-08 | 2006-04-13 | Silverbrook Research Pty Ltd | Method of removing polymer coating from an etched trench |
US7601272B2 (en) | 2005-01-08 | 2009-10-13 | Applied Materials, Inc. | Method and apparatus for integrating metrology with etch processing |
US20060154388A1 (en) | 2005-01-08 | 2006-07-13 | Richard Lewington | Integrated metrology chamber for transparent substrates |
US8293430B2 (en) * | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
US20060166416A1 (en) * | 2005-01-27 | 2006-07-27 | International Business Machines Corporation | Addition of ballast hydrocarbon gas to doped polysilicon etch masked by resist |
KR20070047624A (ko) * | 2005-11-02 | 2007-05-07 | 주성엔지니어링(주) | 박막 패턴 형성 방법 |
KR101251995B1 (ko) * | 2006-01-27 | 2013-04-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
JP2007214299A (ja) * | 2006-02-09 | 2007-08-23 | Tokyo Electron Ltd | エッチング方法 |
JP4865373B2 (ja) * | 2006-03-17 | 2012-02-01 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
US8263498B2 (en) * | 2006-03-28 | 2012-09-11 | Tokyo Electron Limited | Semiconductor device fabricating method, plasma processing system and storage medium |
US8187483B2 (en) * | 2006-08-11 | 2012-05-29 | Jason Plumhoff | Method to minimize CD etch bias |
US20080045030A1 (en) * | 2006-08-15 | 2008-02-21 | Shigeru Tahara | Substrate processing method, substrate processing system and storage medium |
KR100843204B1 (ko) | 2006-09-14 | 2008-07-02 | 삼성전자주식회사 | 반도체 소자의 식각방법 및 이를 이용한 반도체 소자의제조방법 |
US20080070411A1 (en) * | 2006-09-20 | 2008-03-20 | John Ghekiere | Methods for uniformly etching films on a semiconductor wafer |
US8895681B2 (en) * | 2006-12-21 | 2014-11-25 | E I Du Pont De Nemours And Company | Processes for preparing low molecular weight hexafluoropropylene-olefin cotelomers |
JP5119696B2 (ja) * | 2007-03-20 | 2013-01-16 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US20090043646A1 (en) * | 2007-08-06 | 2009-02-12 | International Business Machines Corporation | System and Method for the Automated Capture and Clustering of User Activities |
US7704849B2 (en) | 2007-12-03 | 2010-04-27 | Micron Technology, Inc. | Methods of forming trench isolation in silicon of a semiconductor substrate by plasma |
JP5235596B2 (ja) * | 2008-10-15 | 2013-07-10 | 東京エレクトロン株式会社 | Siエッチング方法 |
US8232171B2 (en) * | 2009-09-17 | 2012-07-31 | International Business Machines Corporation | Structure with isotropic silicon recess profile in nanoscale dimensions |
JP6243722B2 (ja) | 2013-12-10 | 2017-12-06 | 東京エレクトロン株式会社 | エッチング処理方法 |
KR101623654B1 (ko) * | 2014-11-25 | 2016-05-23 | 아주대학교산학협력단 | 플라즈마 가스를 사용한 실리콘 기판 식각방법 |
JP6411246B2 (ja) * | 2015-03-09 | 2018-10-24 | 東京エレクトロン株式会社 | プラズマエッチング方法およびプラズマエッチング装置 |
KR102321373B1 (ko) * | 2015-08-19 | 2021-11-02 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4211601A (en) * | 1978-07-31 | 1980-07-08 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
US5112435A (en) | 1985-10-11 | 1992-05-12 | Applied Materials, Inc. | Materials and methods for etching silicides, polycrystalline silicon and polycides |
US4687543A (en) * | 1986-02-21 | 1987-08-18 | Tegal Corporation | Selective plasma etching during formation of integrated circuitry |
DE3752259T2 (de) * | 1986-12-19 | 1999-10-14 | Applied Materials | Bromine-Ätzverfahren für Silizium |
US5147500A (en) * | 1987-07-31 | 1992-09-15 | Hitachi, Ltd. | Dry etching method |
JP3729869B2 (ja) | 1990-09-28 | 2005-12-21 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP3038950B2 (ja) * | 1991-02-12 | 2000-05-08 | ソニー株式会社 | ドライエッチング方法 |
JPH04298035A (ja) * | 1991-03-27 | 1992-10-21 | Sumitomo Metal Ind Ltd | プラズマエッチング方法 |
US5423945A (en) * | 1992-09-08 | 1995-06-13 | Applied Materials, Inc. | Selectivity for etching an oxide over a nitride |
JP3215151B2 (ja) * | 1992-03-04 | 2001-10-02 | 株式会社東芝 | ドライエッチング方法 |
US5445712A (en) * | 1992-03-25 | 1995-08-29 | Sony Corporation | Dry etching method |
US5286344A (en) * | 1992-06-15 | 1994-02-15 | Micron Technology, Inc. | Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride |
JP3116569B2 (ja) * | 1992-06-29 | 2000-12-11 | ソニー株式会社 | ドライエッチング方法 |
JP3334911B2 (ja) * | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
US5880037A (en) * | 1992-09-08 | 1999-03-09 | Applied Materials, Inc. | Oxide etch process using a mixture of a fluorine-substituted hydrocarbon and acetylene that provides high selectivity to nitride and is suitable for use on surfaces of uneven topography |
JP3271359B2 (ja) * | 1993-02-25 | 2002-04-02 | ソニー株式会社 | ドライエッチング方法 |
JP3252518B2 (ja) * | 1993-03-19 | 2002-02-04 | ソニー株式会社 | ドライエッチング方法 |
JPH06283477A (ja) | 1993-03-25 | 1994-10-07 | Nippon Steel Corp | 半導体装置の製造方法 |
JP3271373B2 (ja) * | 1993-06-21 | 2002-04-02 | 松下電器産業株式会社 | ドライエッチング方法 |
JPH07263415A (ja) | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3529849B2 (ja) * | 1994-05-23 | 2004-05-24 | 富士通株式会社 | 半導体装置の製造方法 |
US5525552A (en) | 1995-06-08 | 1996-06-11 | Taiwan Semiconductor Manufacturing Company | Method for fabricating a MOSFET device with a buried contact |
US5814563A (en) * | 1996-04-29 | 1998-09-29 | Applied Materials, Inc. | Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas |
KR100230981B1 (ko) | 1996-05-08 | 1999-11-15 | 김광호 | 반도체장치 제조공정의 플라즈마 식각 방법 |
US5807789A (en) | 1997-03-20 | 1998-09-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI) |
US5872061A (en) * | 1997-10-27 | 1999-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma etch method for forming residue free fluorine containing plasma etched layers |
US6136211A (en) | 1997-11-12 | 2000-10-24 | Applied Materials, Inc. | Self-cleaning etch process |
JPH11162941A (ja) | 1997-11-28 | 1999-06-18 | Nec Corp | ドライエッチング方法 |
US5994229A (en) * | 1998-01-12 | 1999-11-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Achievement of top rounding in shallow trench etch |
US6020246A (en) * | 1998-03-13 | 2000-02-01 | National Semiconductor Corporation | Forming a self-aligned epitaxial base bipolar transistor |
US6037266A (en) * | 1998-09-28 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher |
-
1999
- 1999-08-03 US US09/366,509 patent/US6583065B1/en not_active Expired - Fee Related
-
2000
- 2000-08-03 KR KR1020027001501A patent/KR20020027520A/ko not_active Application Discontinuation
- 2000-08-03 EP EP00950996A patent/EP1208588A1/en not_active Withdrawn
- 2000-08-03 WO PCT/US2000/021456 patent/WO2001009934A1/en not_active Application Discontinuation
- 2000-08-03 JP JP2001514466A patent/JP2003506866A/ja not_active Withdrawn
- 2000-08-08 TW TW089115644A patent/TW473864B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2003506866A (ja) | 2003-02-18 |
KR20020027520A (ko) | 2002-04-13 |
EP1208588A1 (en) | 2002-05-29 |
US6583065B1 (en) | 2003-06-24 |
WO2001009934A1 (en) | 2001-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW473864B (en) | Sidewall polymer forming gas additives for etching processes | |
US5597438A (en) | Etch chamber having three independently controlled electrodes | |
TW287304B (en) | Methods and apparatus for etching semiconductor wafers | |
AU2001247537A1 (en) | Method for improving uniformity and reducing etch rate variation of etching polysilicon | |
WO2003052808A3 (en) | Self-aligned contact etch with high sensitivity to nitride shoulder | |
TW200509246A (en) | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith | |
AU3866999A (en) | Method of forming high aspect ratio apertures | |
WO2002003426A3 (en) | Process for the post etch stripping of photoresist with hydrogen | |
WO2002065512A3 (en) | Process for etching organic low-k materials | |
EP1096547A3 (en) | Method and apparatus for plasma etching | |
EP1047122A3 (en) | Method of anisotropic etching of substrates | |
TW200512792A (en) | Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition | |
TW200625441A (en) | Photoresist conditioning with hydrogen ramping | |
WO2003107410A3 (en) | METHOD FOR ENGRAVING DIELECTRIC LAYERS WITH A RESERVE LAYER AND / OR AN ENGRAVING PROFILE HAVING IMPROVED CHARACTERISTICS | |
WO2002023611A3 (en) | Integration of silicon etch and chamber cleaning processes | |
WO2004042771A3 (en) | Method of etching a silicon-containing dielectric material | |
TW344863B (en) | Method for etching metal silicide with high selectivity to polysilicon | |
KR950703074A (ko) | 박막형성방법 | |
WO2003030238A1 (fr) | Procede de traitement | |
MY139113A (en) | Methods of etching photoresist on substrates | |
WO2006104655A3 (en) | Etch with photoresist mask | |
WO2003038153A8 (en) | Process for low temperature, dry etching, and dry planarization of copper | |
EP1308994A3 (en) | Method for VIA etching in organo-silica-glass | |
KR960035858A (ko) | 실리콘에 테이퍼진 개구부를 형성하기 위한 방법 | |
TW291587B (en) | Methods and apparatus for reducing etch rate loading |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |