TW472317B - Process and apparatus for treating a workpiece such as a semiconductor wafer - Google Patents
Process and apparatus for treating a workpiece such as a semiconductor wafer Download PDFInfo
- Publication number
- TW472317B TW472317B TW089114615A TW89114615A TW472317B TW 472317 B TW472317 B TW 472317B TW 089114615 A TW089114615 A TW 089114615A TW 89114615 A TW89114615 A TW 89114615A TW 472317 B TW472317 B TW 472317B
- Authority
- TW
- Taiwan
- Prior art keywords
- patent application
- liquid
- scope
- item
- ozone
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 119
- 230000008569 process Effects 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title abstract description 47
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 133
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- 238000004140 cleaning Methods 0.000 claims abstract description 40
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 66
- 239000012530 fluid Substances 0.000 claims description 27
- 239000008367 deionised water Substances 0.000 claims description 26
- 229910021641 deionized water Inorganic materials 0.000 claims description 25
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- 238000004519 manufacturing process Methods 0.000 claims description 15
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- 239000000203 mixture Substances 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000006193 liquid solution Substances 0.000 claims description 5
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- 229910052760 oxygen Inorganic materials 0.000 claims description 5
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- 230000003134 recirculating effect Effects 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000010977 jade Substances 0.000 claims 1
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- 235000012431 wafers Nutrition 0.000 abstract description 84
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000908 ammonium hydroxide Substances 0.000 abstract description 10
- 239000000654 additive Substances 0.000 abstract description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
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- 239000000377 silicon dioxide Substances 0.000 description 3
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- 230000003746 surface roughness Effects 0.000 description 3
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 238000009833 condensation Methods 0.000 description 2
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- 230000008020 evaporation Effects 0.000 description 2
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- 230000003301 hydrolyzing effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000009533 lab test Methods 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
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- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 241000252506 Characiformes Species 0.000 description 1
- PWKSKIMOESPYIA-BYPYZUCNSA-N L-N-acetyl-Cysteine Chemical compound CC(=O)N[C@@H](CS)C(O)=O PWKSKIMOESPYIA-BYPYZUCNSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- 101100515452 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) rca-1 gene Proteins 0.000 description 1
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- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229940106681 chloroacetic acid Drugs 0.000 description 1
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- 238000002242 deionisation method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
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- 239000000975 dye Substances 0.000 description 1
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- 238000002309 gasification Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
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- 238000013101 initial test Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012457 nonaqueous media Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
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- DVUVKWLUHXXIHK-UHFFFAOYSA-N tetraazanium;tetrahydroxide Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[OH-].[OH-].[OH-].[OH-] DVUVKWLUHXXIHK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2230/00—Other cleaning aspects applicable to all B08B range
- B08B2230/01—Cleaning with steam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14535099P | 1999-07-23 | 1999-07-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW472317B true TW472317B (en) | 2002-01-11 |
Family
ID=22512696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089114615A TW472317B (en) | 1999-07-23 | 2000-07-21 | Process and apparatus for treating a workpiece such as a semiconductor wafer |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP1481741B1 (enExample) |
| JP (3) | JP2004500701A (enExample) |
| AT (1) | ATE485115T1 (enExample) |
| DE (1) | DE60045134D1 (enExample) |
| TW (1) | TW472317B (enExample) |
| WO (1) | WO2001007177A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7416611B2 (en) | 1997-05-09 | 2008-08-26 | Semitool, Inc. | Process and apparatus for treating a workpiece with gases |
| US7163588B2 (en) | 1997-05-09 | 2007-01-16 | Semitool, Inc. | Processing a workpiece using water, a base, and ozone |
| JP4917651B2 (ja) * | 1999-08-12 | 2012-04-18 | アクアサイエンス株式会社 | レジスト膜除去装置及びレジスト膜除去方法 |
| US6982006B1 (en) | 1999-10-19 | 2006-01-03 | Boyers David G | Method and apparatus for treating a substrate with an ozone-solvent solution |
| JP4000247B2 (ja) * | 2001-04-18 | 2007-10-31 | 株式会社ルネサステクノロジ | フォトマスクの洗浄方法 |
| EP1347496A3 (en) * | 2002-03-12 | 2006-05-03 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus and substrate treating method |
| JP4232383B2 (ja) * | 2002-05-13 | 2009-03-04 | 信越半導体株式会社 | 半導体ウエーハの表面処理方法 |
| KR100467016B1 (ko) * | 2002-05-30 | 2005-01-24 | 삼성전자주식회사 | 반도체기판의 세정방법 |
| JP2006093473A (ja) * | 2004-09-24 | 2006-04-06 | M Fsi Kk | 基板の洗浄方法及び基板の洗浄装置 |
| JP4919388B2 (ja) * | 2006-03-09 | 2012-04-18 | 国立大学法人広島大学 | 食品製造設備の被洗浄物を洗浄する洗浄装置、および洗浄方法 |
| DE102007027112B4 (de) * | 2007-06-13 | 2011-06-22 | Siltronic AG, 81737 | Verfahren zur Reinigung, Trocknung und Hydrophilierung einer Halbleiterscheibe |
| JP2008311591A (ja) * | 2007-06-18 | 2008-12-25 | Sharp Corp | 基板処理装置および基板処理方法 |
| KR101106582B1 (ko) * | 2007-12-07 | 2012-01-19 | 가부시키가이샤 사무코 | 실리콘 웨이퍼 세정 방법 및 그 장치 |
| CN101945608B (zh) * | 2008-02-21 | 2013-04-03 | 荷兰联合利华有限公司 | 清洁基底的方法和装置 |
| IT1395090B1 (it) * | 2009-04-08 | 2012-09-05 | Lasa Impianti Srl | Apparecchiatura a basso impatto ambientale per il lavaggio di particolari metallici e non metallici che necessitano di un altro grado di pulizia |
| JP5682290B2 (ja) * | 2010-12-20 | 2015-03-11 | 東京エレクトロン株式会社 | 炭素含有薄膜のスリミング方法及び酸化装置 |
| JP5520991B2 (ja) * | 2012-03-29 | 2014-06-11 | 芝浦メカトロニクス株式会社 | 基板の処理装置及び処理方法 |
| US20130276822A1 (en) * | 2012-04-18 | 2013-10-24 | Advanced Wet Technologies Gmbh | Hyperbaric methods and systems for rinsing and drying granular materials |
| US11358172B2 (en) * | 2015-09-24 | 2022-06-14 | Suss Microtec Photomask Equipment Gmbh & Co. Kg | Method for treating substrates with an aqueous liquid medium exposed to UV-radiation |
| WO2018076187A1 (zh) * | 2016-10-25 | 2018-05-03 | 深圳市柔宇科技有限公司 | 液体控温系统及膜层剥离设备 |
| JP7353212B2 (ja) * | 2020-02-28 | 2023-09-29 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP7645114B2 (ja) * | 2021-03-25 | 2025-03-13 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置、および、基板処理方法 |
| JP7718916B2 (ja) * | 2021-08-31 | 2025-08-05 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、および、基板処理装置 |
| JP7720209B2 (ja) * | 2021-09-24 | 2025-08-07 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、および、基板処理装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5232511A (en) * | 1990-05-15 | 1993-08-03 | Semitool, Inc. | Dynamic semiconductor wafer processing using homogeneous mixed acid vapors |
| US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
| JPH05152203A (ja) * | 1991-11-29 | 1993-06-18 | Chlorine Eng Corp Ltd | 基板処理方法および処理装置 |
| KR940012061A (ko) * | 1992-11-27 | 1994-06-22 | 가나이 쯔또무 | 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치 |
| US5464480A (en) * | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| JP2760418B2 (ja) * | 1994-07-29 | 1998-05-28 | 住友シチックス株式会社 | 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法 |
| JP3923097B2 (ja) * | 1995-03-06 | 2007-05-30 | 忠弘 大見 | 洗浄装置 |
| JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
| US5803982A (en) * | 1996-10-15 | 1998-09-08 | Ez Environmental Solutions Corporation | Pressure washing apparatus with ozone generator |
| EP0867924B1 (en) * | 1997-02-14 | 2011-08-31 | Imec | Method for removing organic contaminants from a semiconductor surface |
| JPH10340876A (ja) * | 1997-06-10 | 1998-12-22 | Shibaura Eng Works Co Ltd | 洗浄処理方法および洗浄処理装置 |
| JP4477704B2 (ja) * | 1997-11-20 | 2010-06-09 | アイメック | 半導体基板表面からの有機汚染物の除去方法 |
-
2000
- 2000-07-21 AT AT04020205T patent/ATE485115T1/de active
- 2000-07-21 WO PCT/US2000/020036 patent/WO2001007177A1/en not_active Ceased
- 2000-07-21 JP JP2001512043A patent/JP2004500701A/ja active Pending
- 2000-07-21 TW TW089114615A patent/TW472317B/zh not_active IP Right Cessation
- 2000-07-21 EP EP04020205A patent/EP1481741B1/en not_active Expired - Lifetime
- 2000-07-21 EP EP00948892A patent/EP1212151A4/en not_active Withdrawn
- 2000-07-21 DE DE60045134T patent/DE60045134D1/de not_active Expired - Lifetime
-
2006
- 2006-04-24 JP JP2006119518A patent/JP2006261685A/ja active Pending
- 2006-09-20 JP JP2006254509A patent/JP2007049176A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1481741A3 (en) | 2005-08-17 |
| DE60045134D1 (de) | 2010-12-02 |
| JP2007049176A (ja) | 2007-02-22 |
| ATE485115T1 (de) | 2010-11-15 |
| EP1481741B1 (en) | 2010-10-20 |
| EP1481741A2 (en) | 2004-12-01 |
| EP1212151A4 (en) | 2005-08-17 |
| WO2001007177A1 (en) | 2001-02-01 |
| JP2004500701A (ja) | 2004-01-08 |
| EP1212151A1 (en) | 2002-06-12 |
| JP2006261685A (ja) | 2006-09-28 |
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