JP2004500701A - 半導体ウエハ等のワークピースを処理するための方法及び装置 - Google Patents

半導体ウエハ等のワークピースを処理するための方法及び装置 Download PDF

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Publication number
JP2004500701A
JP2004500701A JP2001512043A JP2001512043A JP2004500701A JP 2004500701 A JP2004500701 A JP 2004500701A JP 2001512043 A JP2001512043 A JP 2001512043A JP 2001512043 A JP2001512043 A JP 2001512043A JP 2004500701 A JP2004500701 A JP 2004500701A
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JP
Japan
Prior art keywords
workpiece
liquid
ozone
processing
wafer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001512043A
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English (en)
Japanese (ja)
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JP2004500701A5 (enExample
Inventor
エリック・ジェイ・バーグマン
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セミトゥール・インコーポレイテッド
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Publication of JP2004500701A publication Critical patent/JP2004500701A/ja
Publication of JP2004500701A5 publication Critical patent/JP2004500701A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007—Heating the liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2230/00—Other cleaning aspects applicable to all B08B range
    • B08B2230/01—Cleaning with steam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001512043A 1999-07-23 2000-07-21 半導体ウエハ等のワークピースを処理するための方法及び装置 Pending JP2004500701A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14535099P 1999-07-23 1999-07-23
PCT/US2000/020036 WO2001007177A1 (en) 1999-07-23 2000-07-21 Process and apparatus for treating a workpiece such as a semiconductor wafer

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006119518A Division JP2006261685A (ja) 1999-07-23 2006-04-24 半導体ウエハ等のワークピースを処理するための方法及び装置
JP2006254509A Division JP2007049176A (ja) 1999-07-23 2006-09-20 半導体ウエハ等のワークピースを処理するための方法及び装置

Publications (2)

Publication Number Publication Date
JP2004500701A true JP2004500701A (ja) 2004-01-08
JP2004500701A5 JP2004500701A5 (enExample) 2005-12-22

Family

ID=22512696

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2001512043A Pending JP2004500701A (ja) 1999-07-23 2000-07-21 半導体ウエハ等のワークピースを処理するための方法及び装置
JP2006119518A Pending JP2006261685A (ja) 1999-07-23 2006-04-24 半導体ウエハ等のワークピースを処理するための方法及び装置
JP2006254509A Pending JP2007049176A (ja) 1999-07-23 2006-09-20 半導体ウエハ等のワークピースを処理するための方法及び装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2006119518A Pending JP2006261685A (ja) 1999-07-23 2006-04-24 半導体ウエハ等のワークピースを処理するための方法及び装置
JP2006254509A Pending JP2007049176A (ja) 1999-07-23 2006-09-20 半導体ウエハ等のワークピースを処理するための方法及び装置

Country Status (6)

Country Link
EP (2) EP1481741B1 (enExample)
JP (3) JP2004500701A (enExample)
AT (1) ATE485115T1 (enExample)
DE (1) DE60045134D1 (enExample)
TW (1) TW472317B (enExample)
WO (1) WO2001007177A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093473A (ja) * 2004-09-24 2006-04-06 M Fsi Kk 基板の洗浄方法及び基板の洗浄装置
JP2007236706A (ja) * 2006-03-09 2007-09-20 Hiroshima Univ 食品製造設備の被洗浄物を洗浄する洗浄装置、および洗浄方法
JP2012134199A (ja) * 2010-12-20 2012-07-12 Tokyo Electron Ltd 炭素含有薄膜のスリミング方法及び酸化装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7416611B2 (en) 1997-05-09 2008-08-26 Semitool, Inc. Process and apparatus for treating a workpiece with gases
US7163588B2 (en) 1997-05-09 2007-01-16 Semitool, Inc. Processing a workpiece using water, a base, and ozone
JP4917651B2 (ja) * 1999-08-12 2012-04-18 アクアサイエンス株式会社 レジスト膜除去装置及びレジスト膜除去方法
US6982006B1 (en) 1999-10-19 2006-01-03 Boyers David G Method and apparatus for treating a substrate with an ozone-solvent solution
JP4000247B2 (ja) * 2001-04-18 2007-10-31 株式会社ルネサステクノロジ フォトマスクの洗浄方法
EP1347496A3 (en) * 2002-03-12 2006-05-03 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus and substrate treating method
JP4232383B2 (ja) * 2002-05-13 2009-03-04 信越半導体株式会社 半導体ウエーハの表面処理方法
KR100467016B1 (ko) * 2002-05-30 2005-01-24 삼성전자주식회사 반도체기판의 세정방법
DE102007027112B4 (de) * 2007-06-13 2011-06-22 Siltronic AG, 81737 Verfahren zur Reinigung, Trocknung und Hydrophilierung einer Halbleiterscheibe
JP2008311591A (ja) * 2007-06-18 2008-12-25 Sharp Corp 基板処理装置および基板処理方法
KR101106582B1 (ko) * 2007-12-07 2012-01-19 가부시키가이샤 사무코 실리콘 웨이퍼 세정 방법 및 그 장치
CN101945608B (zh) * 2008-02-21 2013-04-03 荷兰联合利华有限公司 清洁基底的方法和装置
IT1395090B1 (it) * 2009-04-08 2012-09-05 Lasa Impianti Srl Apparecchiatura a basso impatto ambientale per il lavaggio di particolari metallici e non metallici che necessitano di un altro grado di pulizia
JP5520991B2 (ja) * 2012-03-29 2014-06-11 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
US20130276822A1 (en) * 2012-04-18 2013-10-24 Advanced Wet Technologies Gmbh Hyperbaric methods and systems for rinsing and drying granular materials
US11358172B2 (en) * 2015-09-24 2022-06-14 Suss Microtec Photomask Equipment Gmbh & Co. Kg Method for treating substrates with an aqueous liquid medium exposed to UV-radiation
WO2018076187A1 (zh) * 2016-10-25 2018-05-03 深圳市柔宇科技有限公司 液体控温系统及膜层剥离设备
JP7353212B2 (ja) * 2020-02-28 2023-09-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7645114B2 (ja) * 2021-03-25 2025-03-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法
JP7718916B2 (ja) * 2021-08-31 2025-08-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
JP7720209B2 (ja) * 2021-09-24 2025-08-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置

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Publication number Priority date Publication date Assignee Title
US5232511A (en) * 1990-05-15 1993-08-03 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous mixed acid vapors
US5261966A (en) * 1991-01-28 1993-11-16 Kabushiki Kaisha Toshiba Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns
JPH05152203A (ja) * 1991-11-29 1993-06-18 Chlorine Eng Corp Ltd 基板処理方法および処理装置
KR940012061A (ko) * 1992-11-27 1994-06-22 가나이 쯔또무 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치
US5464480A (en) * 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
JP2760418B2 (ja) * 1994-07-29 1998-05-28 住友シチックス株式会社 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法
JP3923097B2 (ja) * 1995-03-06 2007-05-30 忠弘 大見 洗浄装置
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
US5803982A (en) * 1996-10-15 1998-09-08 Ez Environmental Solutions Corporation Pressure washing apparatus with ozone generator
EP0867924B1 (en) * 1997-02-14 2011-08-31 Imec Method for removing organic contaminants from a semiconductor surface
JPH10340876A (ja) * 1997-06-10 1998-12-22 Shibaura Eng Works Co Ltd 洗浄処理方法および洗浄処理装置
JP4477704B2 (ja) * 1997-11-20 2010-06-09 アイメック 半導体基板表面からの有機汚染物の除去方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093473A (ja) * 2004-09-24 2006-04-06 M Fsi Kk 基板の洗浄方法及び基板の洗浄装置
JP2007236706A (ja) * 2006-03-09 2007-09-20 Hiroshima Univ 食品製造設備の被洗浄物を洗浄する洗浄装置、および洗浄方法
JP2012134199A (ja) * 2010-12-20 2012-07-12 Tokyo Electron Ltd 炭素含有薄膜のスリミング方法及び酸化装置

Also Published As

Publication number Publication date
EP1481741A3 (en) 2005-08-17
DE60045134D1 (de) 2010-12-02
JP2007049176A (ja) 2007-02-22
ATE485115T1 (de) 2010-11-15
EP1481741B1 (en) 2010-10-20
EP1481741A2 (en) 2004-12-01
EP1212151A4 (en) 2005-08-17
TW472317B (en) 2002-01-11
WO2001007177A1 (en) 2001-02-01
EP1212151A1 (en) 2002-06-12
JP2006261685A (ja) 2006-09-28

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