TW459382B - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof Download PDF

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Publication number
TW459382B
TW459382B TW089106899A TW89106899A TW459382B TW 459382 B TW459382 B TW 459382B TW 089106899 A TW089106899 A TW 089106899A TW 89106899 A TW89106899 A TW 89106899A TW 459382 B TW459382 B TW 459382B
Authority
TW
Taiwan
Prior art keywords
film
conductive
insulating film
integrated circuit
circuit device
Prior art date
Application number
TW089106899A
Other languages
English (en)
Chinese (zh)
Inventor
Isamu Asano
Yoshitaka Nakamura
Yuzuru Oji
Tatsuyuki Saito
Takashi Yunogami
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW459382B publication Critical patent/TW459382B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW089106899A 1999-04-30 2000-04-13 Semiconductor integrated circuit device and manufacture thereof TW459382B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11123927A JP2000315778A (ja) 1999-04-30 1999-04-30 半導体集積回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW459382B true TW459382B (en) 2001-10-11

Family

ID=14872795

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089106899A TW459382B (en) 1999-04-30 2000-04-13 Semiconductor integrated circuit device and manufacture thereof

Country Status (4)

Country Link
US (1) US6426255B1 (https=)
JP (1) JP2000315778A (https=)
KR (1) KR20010014841A (https=)
TW (1) TW459382B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3285007B2 (ja) * 1999-05-07 2002-05-27 日本電気株式会社 めっき装置用検出器
US6781184B2 (en) * 2001-11-29 2004-08-24 Symetrix Corporation Barrier layers for protecting metal oxides from hydrogen degradation
KR100434334B1 (ko) * 2002-09-13 2004-06-04 주식회사 하이닉스반도체 듀얼 마스크를 이용한 반도체 소자의 커패시터 제조 방법
KR100532437B1 (ko) * 2003-05-26 2005-11-30 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
JP2005005510A (ja) * 2003-06-12 2005-01-06 Toshiba Corp 半導体装置及びその製造方法
KR100722787B1 (ko) * 2005-04-25 2007-05-30 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP4322912B2 (ja) 2006-11-24 2009-09-02 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP5399232B2 (ja) 2007-02-21 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2012089744A (ja) * 2010-10-21 2012-05-10 Elpida Memory Inc 半導体装置の製造方法
CN108269762B (zh) * 2016-12-30 2021-06-08 联华电子股份有限公司 半导体存储装置的制作方法
TWI745054B (zh) * 2020-08-27 2021-11-01 華邦電子股份有限公司 半導體元件及其製造方法
CN114141770B (zh) * 2020-09-03 2024-10-29 华邦电子股份有限公司 半导体元件及其制造方法
WO2025219844A1 (ja) * 2024-04-19 2025-10-23 株式会社半導体エネルギー研究所 記憶装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585300A (en) * 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
JPH08335680A (ja) * 1995-06-06 1996-12-17 Texas Instr Inc <Ti> 高密度、高誘電率メモリ装置内の内部電極形成方法並びに装置
JPH0995791A (ja) * 1995-10-04 1997-04-08 Sasakura Eng Co Ltd 固体高分子電解質水電解装置及びその電極構造
JPH09162370A (ja) * 1995-12-14 1997-06-20 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6064469A (en) * 1996-08-30 2000-05-16 Applied Graphics Technologies, Inc. Apparatus and method for processing images using a reciprocating easel
KR100227843B1 (ko) * 1997-01-22 1999-11-01 윤종용 반도체 소자의 콘택 배선 방법 및 이를 이용한 커패시터 제조방법
KR100243285B1 (ko) * 1997-02-27 2000-02-01 윤종용 고유전 커패시터 및 그 제조방법
JPH10289985A (ja) 1997-04-14 1998-10-27 Mitsubishi Electric Corp キャパシタを有する半導体装置の製造方法
JP3484324B2 (ja) * 1997-07-29 2004-01-06 シャープ株式会社 半導体メモリ素子
KR100269306B1 (ko) * 1997-07-31 2000-10-16 윤종용 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법
US6144053A (en) * 1999-01-20 2000-11-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitor with a high dielectric constant film

Also Published As

Publication number Publication date
US6426255B1 (en) 2002-07-30
JP2000315778A (ja) 2000-11-14
KR20010014841A (ko) 2001-02-26

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees