TW452956B - Heat dissipation structure of BGA semiconductor package - Google Patents
Heat dissipation structure of BGA semiconductor package Download PDFInfo
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- TW452956B TW452956B TW089100073A TW89100073A TW452956B TW 452956 B TW452956 B TW 452956B TW 089100073 A TW089100073 A TW 089100073A TW 89100073 A TW89100073 A TW 89100073A TW 452956 B TW452956 B TW 452956B
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Description
45295 6 A7
---------------------訂---------線 (請先閱讀背面之沒意事項再填寫本頁) B7 B7 經 濟 部 智 慧 產 局 費 合 1卞 fl 印 V. 五、發明說明(2 ) 設由導熱性佳之金屬所製成的散熱件(Heat Sink,Heat Slug. 或Heat Block)之結構,冀以提高散熱效率。 此種具散熱性件之BGA半導體封裝件係如第13圖所 示’其散熱件100係以内嵌(Embeded)之方式被包覆在封 裝膠體110中。該散熱件100係於其邊緣一體成形有向下 彎折之支撐部101 ’以利用該支撐部1〇1使散熱件1〇〇撐 s又於一球栅陣列(BGA)基板120上。於此種BGA半導體 封裝件之封裝製程中,一般係在上片(Dle B〇rding)及打線 (Wire Bording)之後,亦即先將半導體晶片13〇以銀膠14〇 接合至BGA基板120上,再來打上金線1 5〇,使晶片13〇 與BGA基板120產生可導電之連接關係後,方將該散熱 件100以接著劑160接合至BGa基板12〇上之定位,使 打妤金線150之晶片130得位在該散熱件1〇〇之下方,接 著才進行模壓(Mo丨ding),俾以封裝膠體no將晶片13〇、 金線150,以及散熱件1〇〇加以包覆於BGA基板ι2〇之 上表面上,並使散熱件100以其上表面外露出封裝膠 體110外之方式’被内嵌於該封裝膠體丨1()中。 由於此種BGA半導體封裝件之晶片1 30的厚度a 一 股為〇.33mm,散熱件1〇〇之厚度c 一般則為〇 3mm,而 子裝勝體Π0之厚度d —般係為1.1.7 mm’因此散熱件1〇〇 與晶片1 3 0間之距離b即為封裝膠體】丨〇之厚度D減去 散熱件1 00之厚度C再減去晶片1 30之厚度a後所得之 值,亦即 — b"D-C>a- i ^mm-0 3tnm-0.33mm-0.54mm 15943 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁)
4 5 295 Q A7 B7 五、發明說明(3 ) 此乃表示晶片13〇所產生之熱量僅須通過距離a〇54mm 之散熱路徑b即可到達,導熱性佳之散熱件1〇〇 ,再藉由 散熱件100的外露表面102之大型散熱面積將熱量迅迷地 逸散至大氣中’較之未設有内嵌式散熱件之BGA半導體 封裝件’由於其散熱路徑為D-a=l,17mm-0,33mm==〇84mm, 此種具内嵌式散熱件100之BGA半導體封裝件的晶片散 熱路徑b得縮短0.3 mm,而其散熱效率根據實驗所得結果 顯示可提高約10%至20%,亦即藉由將該内嵌式散熱件1〇〇 加設於BGA半導體封裝件後,晶片130之散熱效率確可 有效提昇’並進而確保晶片之信賴度。 此外’亦有業者為進一步提高散熱效率,而研製出如 第14圊所示之BGA半導體封裝件,此種BGA半導體封 裝件大致與第13围所示者相同,惟在内嵌式散熱件〗00, 之底侧向下形成有一凸出部1 03,,俾令晶片1 3 0之熱量 逸散至散熱件100’之散熱路徑b’更為縮短,以達更佳之 散熱效率。 然而,上述具有内嵌式散熱件之BGA半導體封裝件 雖確可達到較佳之散熱效率,惟在實際應用以及製造程序 上仍存在有諸多之問題點。 首先,該等内嵌式散熱件100、1〇〇’在接合至BGA 基板120上時,必須施予精密之定位,以避免碰傷已完成 上片及打線之晶片130及金線150,同時在接合後亦癀加 以烘烤,俾令散熱件100、100,得固定在BGA基板120 上’因而導致製程時間(Cycle Time)之增加’製程動作之 (請先閱讀背面之注意事項再填寫本頁) 訂---------線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) 3 15943 B7 B7 4 五、發明說明(4 ) 複雜化,並進而造成生產成本以及製造費用居高不下。 其次,由於由導熱金屬製成之内嵌式散熱片1〇〇、1〇〇’ 之熱膨張係數(Crefficient of Thermal Expansien,簡稱 CTE) 約在16至17ppm/°C之間,而封裝膠體110之CTE則為 1 3ppm/t左右,是以在高溫固化封裝膠體11〇之降溫冷 卻製程中,或在此種BGA半導體封裝件之成品被銲設於 印刷電路板上之迴銲(Solder Reflow)作業後的降溫冷卻過 程中’或在溫度循環(TemperatareCycle)之信賴性驗證作
業中,由於散熱件100 ’ 100,以及封裝膠體110兩者之CTE 所存在之差異,導致兩者間之溫差之變形量不同而產生翹 曲’進而造成散熱件100,100,與封裝膠體110間之接合 處之脫層(04311111^^0!1)現象,使令產品之可靠度降低。 再者’此種内嵌式散熱件100,100,上向下彎折之支 撐部101 ’ 10Γ之設計,會在模壓注膠製程中,會流經該 等支樓部1 0 1,1 0 1 ’之封裝樹脂模流因該等支揮部1 〇卜1 〇 1, 之阻擋而使流動中的封裝樹脂產生擾流,使除了會導致金 線移位或脫落’影響金線品質外’進而造成氣洞(v〇id)之 產生’使該製成品在鲜錫迴銲(Solder Reflow)之作業中, 會因高溫而產生氣爆(P〇pcorn),致影響產品之信賴性甚 矩。 此外’此種内钱式散熱件1 00, 1 00,上用於定位在BGA 基板120上之支撐部丨01,丨0Γ設計亦佔去不少bGa基 板120上之佈局aayom)面積,使得需要較大佈局面積之 產品Μ列如多晶片(MCM)BGA半導體封裝件,即無法嘀 束____ ____ 、 '^ 尺度翻心關家H CNS^格-----——- L5941 -------------^--------^---------^ <請先閱讀背面之注意事項再填寫本頁) 45295 6 經 濟 部 智 慧 財 產 局 消 費 合 作 社 印 製 A7 五、發明說明(5 ) 用此種内嵌式散熱件100,i 00,之散熱結構,而大大減少 了其晶片伟局設計之自由度β 又’由於此種内嵌式散熱件100,100,係多由冲削 (Stamping)之方式製成’其緣部之角端往往會在冲削成型 時形成圓角現象’故在模壓製程中,流動性佳之封裝樹脂 模流易通過此種圓角化之角端而溢流至散熱件1 〇〇,丨〇〇, 之外露表面102 ’ 102,上,致產生溢膠(Flash)現象。溢膠 現象之產生除會減少外露表面之散熱面積外,亦會使該散 熱件100’ 100’之外露表面102, 102’失卻平面度(Planarity) 而無法與外接之散熱結構有效接合β這些溢流至外露表面 102,102’上之封裝樹脂雖能以喷砂、雷射等處理方式予 以去除’然而此種物理性之後處理(p〇st_treatment)不僅會 增加製造成本與製程之複雜度外’亦容易損及BGA半導 髏封裝件之外觀及結構。 [發明之概述] 本發明之首要目的即在提供一種得簡化製造流程,縮 短製程時間,降低生產成本及製造費用,同時仍得保有極 佳散熱效率之BGA半導體封裝件之散熱結構。 本發明之另一目的則在提供一種不會產生脫層現象, 使可保有高產品可靠度之BGA半導體封裝件之散熱結 構。 ‘、。 本發明之又一目的係在提供一種在模壓製程中不會令 封裝樹脂模流產生擾流,使無影響金線品質或產生氣洞之 虞,而可獲得極佳信賴性之BGA半導體封裝件之散熱結 (諳先閱讀背面之注棄爹項再填寫本頁)
15943 B7 B7 經濟部智慧財產局員工消費合咋社"'.钤 [5943 五、發明說明(6 ) 構。 本發明之再一目的即在提供一種不會佔用基板上之佈 局面積,使可適用於各種不同之晶片佈局設計之半 導體封裝件之散熱結構。 本發明之又一目的則在提供一種得防止溢膠現象之產 生,使不必為去除溢膠而須增加喷砂或雷射等後處理作 業’而得以簡化製程,並得避免損及製成品外觀及結構之 BGA半導體封裝件之散熱結構。 為達成本發明之上揭及其他目的,本發明之bGa半 導體封裝件之散熱結搨;係包括至少、—形成在封裝膝體上之 散熱件谷槽,以及以至少一表面外露出該封裝膠體表面之 方式由外界嵌合於該散熱件容槽中之外嵌式散熱件s其 中,該散熱件容槽係可在進行模壓製程時一併形成在封裝 膠體之頂部表面上鄰近晶片所在位置之上方處,俟封裝製 程完成之後,再視實際需要選擇適當形式之由導熱金屬製 成之散熱件嵌接於該散熱件容槽中,使該外嵌式散熱件之 至少一表面得在接合於該散熱件容槽中之後外露出該封裝 膠體之表面即可。 由於前述本發明之BGA半導體封裝件之散熱結構無 須則揭/¾在模魔製程前先將散熱件接合、供烤,使定位於 基板上之作業’故可簡化製造流程,縮短製程時間。 此外1由於本發明之散熱結構一般係藉由導熱膠將外 嵌式散熱件接合至該散熱件容槽中是以該外嵌式散熱件 與教裝耀體之間存在有—導熱膠層而非該兩者之直接接 適用 ^ .¾ sa 1- ^r^s) -------------裝--------訂--------*線 (埼先閱讀背面之注音?事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 45295 6 A7 --- B7 五、發明說明(7 ) 合’故可緩和翹曲情形之發生,使不會再造成令人頭痛之 脫層現象。 再者’本發明所使用之外嵌式散熱件不再需要向下彎 折之支撐部設計,故而在模壓注膠之製程中,封裝樹脂之 流動將會因為沒有任何干擾而無產生擾流之虞,同時亦因 未佔用任何基板上之佈局面積’故可大幅提高晶片佈局設 計之自由度。 又,本發明之外嵌式散熱件係在整個封裝製程完成後 方才被接合至散熱件容槽中’因此在模壓製程中尚未加入 任何散熱件’故自無封裝樹脂模流會溢流至散熱件外露表 面上之溢膠現象之產生。 此外,由於本發明之外嵌式散熱件係以至少一表面向 外露出之方式接合於形成在封裝膠體頂部表面上鄰近晶片 所在位置之上方處的散熱件容稽中,因此仍至少得維持與 前揭具有内嵌式散熱件之BGA半導體封裝件相同之大型 散熱面積以及較短之晶片散熱路徑,故仍可保有不遞於前 揭具有内嵌式散熱件之習知BGA半導體封裝件或甚至更 佳之散熱效率。 為使本發明之上揭及其他目的或功效更漆明瞭,茲參 酌附圖詳細說明本發明之較佳實施例如後。 [圖式之簡單說明] 第1圖係為本發明第1實施例之正面示意圖; 第2圖係為第1圖所示之第!實施例尚未接設有外嵌 式散熱件時之狀態示意圖; r1--------訂---------線 /、 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210x 297公楚) 7 15943 經濟部智慧財產局_工"費""社^. A; ------^_一 B7___ 五、發明說明(s ) ·~' U m本發明第2實施例之正面示意圖: 第4圖係為本發明第3實施例之正面示意圖; 第5圖係為本發明 十5S β系4實施例之正面示意圖; 第6圖係為本發明第5實施例之正面示意圖; ^㈣為本發明第6實施例之正面示意圖; 第8圖係為本發明窠 β弔7實施例之正面示意圖; 第9圖係為本發明第9办丨々1 = 严我β弟8實施例之正面示意圖; 第10圖係為本發明帛9實施例之正面示意圖: 第11圖係為本發明第10實施例之俯視圖; 第12圖係為本發明第11實施例之俯視圖; 第13圖係為習知具有内嵌式散熱件之半導體封 裝件之正面示意圖;以及 第14圖係為另一習知具有内嵌式散熱件之bga半導 體封裝件之正面示意圖。 [發明之詳細說明] 如第1®所示’本發明之BG A半導體封裝件之散熱 結構之第1實施例係包括至少一形成在封裝膠體2】〇上之 散熱件容槽270 ’以及以至少一表面202外露出該封裝膠 體210之表面的方式由外界接合於該散熱件容槽27〇令之 外嵌式散熱件200 =其中,該散熱件容槽270係可藉由在 封裝模具之上模穴中預先凸設相當於該散熱件容槽27〇之 幾何形狀之凸起(未圖示),使得在進行模壓製程的同時, 即一併形成在封裝膠體,2丨0之頂部表面上鄰近晶片2 3 0所 在位置之上方處,如第2圊所示 而由導熱金屬製成之該 15943 -------------裝--------訂--------- I線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 45295 6 A7 ------- B7__ 五、發明說明(9 ) 外嵌式散熱件200遂可在封裝製程全部完成後,再藉由施 2導熱膠280由外界接合至可容置該散熱件2〇〇之散熱件 办错270 t ’如第1圖所示,並使其上方之表面2()2得以 向外露出’俾增加其散熱面積,以有效提昇散熱效率。 此外,封裝膠體210之厚度D以及外嵌式散熱件2〇〇 之厚度C1皆得維持與第〗3圖所示習知裝置之封裝膠體 110之厚度D以及内嵌式散熱件1〇〇之厚度c相同之數 值,使其晶片之散熱路徑bl得同於該習知裝置之晶片散 熱路徑b,故可使本發明之散熱效率至少得保有與習知裝 置相同之散熱效率,同時因外觀尺寸未有任何變更,使逕 可沿用習知裝置之各項應用。 惟若需要更佳之散熱效率,亦可選擇在不會損及金線 250之範圍下增加散熱件容槽27〇之深度,亦即令外嵌式 散熱件200之厚度C1加大,使晶片23〇之散熱路徑Μ 相對地縮短’即可達更為良好之散熱效率。 本發明之第2實施例係將外嵌式散熱件3〇〇暨散熱件 容槽370之長度及寬度皆向中央縮小;如第3圖所示,以 避開金線250,俾使散熱件容槽37〇之深度,亦即散熱件 300之厚度得以向下延伸,至略低於金線25〇,惟仍高於 晶片230之位置處,以進一步縮短晶片23〇之散熱路徑。 此種設計雖使外嵌式散熱件300之外露表面3〇2之散熱面 積略為縮減,惟因有更為縮短之晶片散熱路徑,故整體上 仍可獲得良好之散熱效率。 本發明之第3實施例係結合上述之第丨實施例與第2 ,叙--------訂---------線 ί請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公§ ) 9 15943 經濟部智慧財產局員工消費合作社 A7 ____ B7_ 五、發明說明(10 ) 實施例之設計而成,如第4圖所示。其令,外嵌式散熱件 400以及散熱件容槽470皆形成為略呈矮胖狀之τ字垂直 戴面’使其除得獲致外露表面402之大型熱面積外,亦因 其Τ字形下端部404得避開金線25〇而向下延伸至緊鄰 晶片230之上方處,令其晶片230之散熱路徑亦大為縮短, 故可獲得較前述兩實施例為佳之散熱效率。 如欲達到更佳之散熱效率則可在充分考量過晶片 之適應能力後,選擇將散熱件容槽及外嵌式散熱件之底部 直接貫通至晶片230之頂面上,如第5圖所示第4實施例 之57〇以及第6圖所示第5實施例之67〇,俾使晶片23〇 所產生之熱量僅需透過導熱躍層280即可直接到達外嵌式 散熱件500 ' 600,而迅速由其外露表面5〇2、6〇2逸散至 大氣中。 另一種可大幅而有效增進散熱效率之方式,係如第7 圖所示“實施例之設計’亦即在已接合有外嵌式散熱件 200之:BGA半導體封裝件之製成品(以第】圖所示之第1 實施例之結構為例)的頂面上直接再以導熱膠285將具有 複數個肋部701之大型散熱件7〇〇加以接合,即可藉由該 等肋部701所增加之散熱面積將晶片23〇所產生之熱量迅 速地逸散至大氣中。惟除具肋部之大型散熱件7〇〇之外, 如風扇(Fan)、熱管(Heai pipe>、冷卻水管等散熱裝置亦 可選用。 第8圖所;η:之第τ實施例則係將第6實施例之外嵌式 敎熱# 200以及具複數肋部7〇 |之大型散熱件7(}〇結合成 ④娜--—-- ‘ , i〇 15943 --------------裝---------訂'--------線 Γ 清先閱讀背面之注意事項再填寫本頁) 95 6 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(U ) 單一之外嵌式散熱件800’俾簡化一道將散熱件以導熱膠 加以接合於BGA半導體封裝件上之手績,惟仍可獲得原 有之高散熱效率。 如第9圖所示之第8實施例係顯示本發明之散熱結構 應用於多晶片佈局設計之情形。在此實施例中,外嵌式散 熱件900之長度及寬度皆適度地予以增加,俾使該等晶片 230所產生之大量熱量得經由加大之外露表面902迅速地 逸散至大氣中。 本發明之第9實施例係適用於晶片230數量更多之多 晶片佈局設計’如第10圖所示’其中,為因應眾多晶片 所產出之龐大熱量,遂選擇將外嵌式散熱件1〇00暨散熱 件容槽1070之長寬尺寸放至最大,使達封裝膠體21〇之 側壁為止’以令散熱件1000得完全覆蓋於封裝膠體2 10 之頂層’俾獲取外露表面1〇〇2之最大面積,以達最佳之 散熱效率。 此處須特別一提的是本發明之第8及第9實施例所揭 示之多晶片佈局設計由於須要佔用大量之基板佈局面積, 故僅能適用本發明無須佔用任何基板佈局面積之外喪式散 熱件設件,而無法使用須藉向下弩折之支撐部定位於基板 上之内嵌式散熱件結構。 此外’本發明之外嵌式散熱件之投影形狀係得視實際 需要選擇最適切之設計,其可為如第11圖所示之第十實 施例之矩形1100,亦可為如第12圖所示之第十一實施例 之圓形1200,亦可為其他如多邊形等等之各種形狀。 ------- -------------^ ---------^ ^ V <諳先間讀背面之;i意事項再填寫本頁) 未紙張尺度適用中國國家標準(CNSM4蜆格(210 X 297公釐) 11 15943 A7 A7 經濟部智慧財產局員工璘費合"社印 101 1 03 120 1 40 1()1’支撐部 凸出部 BGA基板 銀膠 12 五、發明說明(12 ) 由上述諸多實施例之揭示及說明,可知本發明之散熱 構除得提供大幅之散熱面積以及短縮之散熱路極,使可 提昇散熱效率,增進產品之信賴性外,並因無須在封裝製 程中將散熱件接合並定位在基板上,故可簡化製程,節省 成本’同時亦因外嵌式散熱件省卻向下彎折之支撑部設 計’且係封裝製程全部完成後方以導熱膠接合於封裝膠體 上方之容槽中,因此不會有模壓泡膠時產生擾流以及溢膠 等問題’同時亦可提高晶片佈局設計之自由度,再加上外 喪式散熱件與封裝膠體間有導熱膠層作為介面,故亦可防 止脫層現象之產生,使利用本發明之散熱結構的BGA半 導體封裝件之可靠度與信賴性皆大為提昇,同時更具市場 之競爭力。 本發明前揭之諸實施例僅係用以例釋本發明之特點及 功效,而非用以限定本發明可供實施之範圍,故任何其他 在未脫離本發明所揭示之精神與原理下所完成之,等效改 變或修飾,如把第六實施例之大型散熱件7〇〇接合至第四 實施例之製成品頂面上等之將前揭m例之各種外嵌式 散熱件暨散熱件容槽之形&或組合加以任意排歹重組而成 之等效結構等,均應仍為下述之申請專利範圍所涵蓋。 [囷式之符號說明] 100,100’内嵌式散熱件 丨02 · 102'外露表面 1 1 〇 封裝膠體 130 车導體晶片 1594? - ------—III,--· ------丨訂'--II — — !— C請先閱讀背面之注意事項再填寫本頁) 452956 A7 _B7_ 五、發明說明(13 ) 150 金線 160 接著劑 200,300,400,500,600,700, 外嵌式散熱件 800 , 900 , 1000 , 1100 , 1200 202,302,402,502,602,702 * 外露表面 802 , 902 , 1002 , 1102 , 1202 (請先閱讀背面之注意事項再填寫本頁) ------- 訂 *--------- 210 封裝膠體 220 BGA基板 230 半導體晶片 240 銀膠 250 金線 280 * 285 導熱膠 701 , 801 肋部 a 晶片厚度 b , V , bl 散熱路徑 C,Cl 散熱件厚度 D 封裝膠體厚度 經濟部智慧財產局員工消費合作社印*''^ 本紙張尺度適用中國®家標準(CNS)/^規格(210x297公釐) 13 15943
Claims (1)
- 8 0^899 A&CD 經濟部智慧財產局員x:-iif合作让iriK 14 六' 申請專利範圍 1. 一種BOA半導鱧封裝件之散熱結構’係包括: 至少一形成在封裝膠體上之散熱件容槽;以及 以至少一表面外露出該封裝膠體表面之方式由外 界接合於該散熱件容槽中之外嵌式散熱件。 2. 如申請專利範圍第1項之BGa半導體封裝件之散熱結 構’其中該散熱件容槽係在進行模壓製程時,一併形 成該封裝膠體之頂部表面上鄰近晶片所在位置之上方 處。 3. 如申請專利範圍第2項之bGa半導體封裝件之散熱結 構’其中該散熱件容槽係藉由在封裝模具之上模穴中 預先凸設相當於該散熱件容槽之幾何形狀之凸起,使 於進行模壓製程時,一併形成在該封裝膠體之頂部表 面上鄰近晶片所在位置之上方處。 4. 如申請專利範圍第1、2、或3項之bGA丰導體封裝 件之散熱結構’其中該外嵌式散熱件係由導熱金屬所 製成。 5_如申請專利範圍第1、2 '或3項之bga半導體封裝 件之散熱結構,其t該外嵌式散熱件係俟封裝製程全 部完成後,方由外界接合至該散熱件容槽中a 6.如申請專利範圍第5項之BGA半導體封裝件之散熱結 構’其中該外嵌式散熱件係藉由施加導熱膠而接合至 該散熱件容槽中。 7如申請專利範圍第丨、2、或3項之BCtA半導體封裝 件之散熱結構·其中該外嵌式散熱件暨該散熱件容_ ________________ US' t-S 33* ϋ g H -t (CNS)A 3 mtr l :.: 10 - 297 ) -------- L5943 --------------裝--------訂·--------線 {請先閱讀背面之注意事項再填寫本頁) A8B8C8D8 452956 r、申請專利範圍 之長度及寬度皆係向中央縮小至可避開金線,並使該 外嵌式散熱件之厚度暨該散熱件容槽之深度得向下延 伸至低於該金線’惟仍高於該晶片之位置處。 8·如申請專利範圍第1、2'或3項之BGA半導體封裝 件之散熱結構’其中該外嵌式散熱件暨該散熱件容槽 係呈T字形垂直截面之形狀,且該τ字形之下端部係 避開該等金線而向下延伸至緊鄰該晶片之上方處。 9.如申請專利範圍第1、2、或3項之BGA半導體封裝 件之散熱結構,其中該外嵌式散熱件暨該散熱件容槽 之底部係直接貫通至該晶片之頂面上。 10_如申請專利範圍第1、2、或3項之BGA半導體封裝 件之散熱結構,其中該外嵌式散熱件之頂面上復接設 有具肋部之散熱件》 11. 如申請專利範圍第1、2、或3項之BGA半導體封裝件 之散熱結構,其中該外嵌式散熱件之上方一體成型有 複數個肋部。 12. 如申請專利範圍第1、2、或3項之BGA半導體封裝 件之散熱結構,其中該外嵌式散熱件暨該散熱件容槽 之長、宽尺寸係放大至達到該封裝膠體之側壁為止。 13. 如申請專利範圍第1、2、或3項之BGA半導體封裝 件之散熱結構,其中該外嵌式散熱件之投影形狀係為 矩形。 14. 如申請專利範圍第1、2、或3項之BGA半導鱧封裝 件之散熱結構,其中該外嵌式散熱件之投影形狀係為 t 11--- :裝—------訂---I----- {請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印裂 本紙張尺度適用中國國家標準(CNS〉A4規格(210 X 297公芨) 15 15943 A8 B8 C8 08 六、申請專利範圍 圓形。 15.如申請專利範圍第1 ' 2、或3項之BGA半導體封裝 件之散熱結構,其中該外嵌式散熱件之投影形狀係為 多邊形^ -------------I --------訂.-------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局|'工消費合^吐:?「^ 15943
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CN104934384A (zh) * | 2014-03-18 | 2015-09-23 | 丰田自动车株式会社 | 半导体装置及半导体装置的制造方法 |
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