TW452868B - Semiconductor device, method for manufacturing the same, circuit board and electronic apparatus - Google Patents

Semiconductor device, method for manufacturing the same, circuit board and electronic apparatus Download PDF

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Publication number
TW452868B
TW452868B TW088104506A TW88104506A TW452868B TW 452868 B TW452868 B TW 452868B TW 088104506 A TW088104506 A TW 088104506A TW 88104506 A TW88104506 A TW 88104506A TW 452868 B TW452868 B TW 452868B
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Taiwan
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layer
semiconductor device
conductive layer
conductive
mentioned
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TW088104506A
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English (en)
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Kazuhiko Nozawa
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Seiko Epson Corp
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Description

4 5286 6 A7 B7 ^ Γ· ;u 4. ‘ίΫ r 五、發明說明（1 ) 【技術領域】 本發明係有關半導體裝置及其製造方法，電路基板以 及電子機器。 【背景技術】 先行技術之軟焊塊件（solder bump )之質地金屬，係 由；在電極（通常爲鋁）之正上方約略以同尺寸之障壁金 屬（barrier metal )薄膜，與在其正上方約略以同尺寸所形 成並且容易由軟焊料濕潤之金屬薄膜所構成。又，即使於 半導體晶片上設有配線層之構造時，也具同樣之構造。近 年來，隨著電子機器之小型化將具有軟焊塊件之半導體裝 置直接連接於基板，更且欲將電子機器小型化，輕量化之 趨勢愈顯著。在此狀態下，半導體元件要求對於熱膨脹係 數大爲相異基板之連接可靠性逐漸增高。例如，日本特公 平7 - 1 0 5 5 8 6號公報所揭示，提案有將約與軟焊塊 件相同大小之質地金屬，成爲多層之金屬層，來緩和應力 之構造。 然而，於實際之半導體裝置之連接時，封裝於將熱膨 脹係數爲近於半導體晶片之受到限制之基板，或限定其半 導體晶片之大小，或連接後追加製程注入樹脂等，具有製 程變成複雜或材料成本偏高之問題。 本發明係解決适種問題者，其目的係提供一種，基板 材料之選擇或連接後不必追加製程可邊確保連接可靠性， 而可直接連接於基板，並且，可將電子機器小型化，輕量 4¾¾ ϋ辽甲中a國家摞单<CNS).W梘格（210 X 297公轚） -4- (請先《讀背面之注意事項再填寫本頁) 4 5286^ A7 B7 p. 五、發明說明（2 ) (請先間讀背面之注意事項再填寫本頁) 化之半導體裝置及其.製造方法，電路基板以及電子機器。 【發明之揭示】 (1 )有關本發明之半導體裝置，係包括； 具有電極之半導體元件，與 連接於上述電極之配線層，與 在避開上述電極之位置設於上述配線層之導通層，與 以超過上述導通層之外周輪廓之大小設於上述導通層 上，而較上述導通層更容易變形之質地金屬層，與 設於上述質地金屬層上之塊件|與 設於上述導通層周圍之樹脂層（絕緣保護層）。 若依據本發明，因熱應力而導通層發生變形，並且， 質地金屬也會變形。因在導通層周圍設有樹脂層，所以， 大部分之熱應力與其於導通層毋寧施加於質地金屬層，由 於質地金屬層會大爲變形，所以I可吸收熱應力。其結果 t施加於導通層之熱應力之力量就減輕，而可抑制因導通 層之剪斷力所引起之導通不良。 (2 )於此半導體裝置， 上述塊件，係形成爲超過上述導通層之外周輪廓之大 小， 上述塊件與上述質地金屬層所接觸領域之投影面積， 也可較上述質地金屬層與上述導通層所接觸領域之投影面 積爲大。 衣紙ft < 丐由西0家標单（CNS),A.l规格（210 * 297公髮） · 5 - ^*5286 A7 B7 五、發明說明（3 ) (3) 於此半導體裝置， 上述樹脂層也可與上述質地金屬層之下面之至少一部 分接觸。 (4) 於此半導體裝置， 上述樹脂層也可設於從上述質地金屬層之下面離開之 處。 (5) 於此半導體裝置， 在上述質地金屬層之下面與上述樹脂層之間也可設接 著劑。 (6) 於此半導體裝置， 上述導通層，也可以其高度爲1 2〜3 0 0 Am程度 ，直徑爲20〜lOOjum程度。 若據此，由於導通層容易變形|所以，可容易吸收熱 應力。 (7 )有關本發明之電路基板，係封裝於上述半導體裝置 0 (8 )有關本發明之電子機器，係備有上述半導體裝置。 (9 )有關本發明之半導體裝置之製造方法，係包括； 準備電極與連接於上述電極之配線層所形成之半導體 裝置之製程，與 — — — — — — — — —----^ *----I Ϊ I ^*1--1 I I ! I W (請先閱讀背面之注意事項再填寫本頁) Α7 Β7 4^86ί 五、發明說明（4 ) 在避開上述電極之位置對於上述配線層設導通層之製 程，與 以超過上述導通層外周輪廓之大小，並且，將較上述 導通層更容易變形之質地金屬設於上述導通層上之製程， 與 在上述質地金屬上設塊件之製程，與 在上述導通層周圍設樹脂層之製程。 若依據本發明所製造之半導體裝置，因熱應力而導通 層會發生變形，並且，質地金屬也會變形。因在導通層周 圍設有樹脂層，所以，大部分之熱應力與其於導通層毋寧 施加於質地金屬層，由於質地金屬層會大爲變形，所以， 可吸收熱應力。其結果，施加於導通層之熱應力之力量就 減輕，而可抑制因導通層之剪斷力所引起之導通不良。 (1 0 )於此半導體裝置之製造方法， 設上述導通層及上述樹脂層之製程，也可包括； 位於上述配線上將上述導通層之形成領域作爲開口部 加以開口，以形成上述樹脂層之第1製程，與 藉印刷在上述開口部，塡充對於黏合劑（binder )分 散導電塡料所形成之導電漿料（paste )之第2製程，與 加熱上述導電漿料，使上述黏合劑硬化密貼於上述配 線之第3製程。 若據此，由印刷可簡單地將導電漿料塡充於樹脂層之 開口部。 4¾¾泛用中國國家標单（C；S：S)A_1蜆格（210 X 297公f ) 11 I !'-----l'k-----1!訂·-----I I . (請先閱讀背面之注意事項再填寫本頁) 452 叫 Λ, __Β7_ 五、發明說明（5 ) (1 1 )於此半導體裝置之製造方法， 也可以在上述第2製程，溶解上述導電塡料密貼於上 述配線。若據此，因熔化導電塡料，所以，可形成密貼於 配線之導通層。 (1 2 )於此半導體裝置之製造方法， 設上述質地金屬層之製程，也可包括： 設上述導通層及上述樹脂層之後，避開與上述導通層 之接觸部分將設有接著劑之金屬箔在真空下張貼於上述導 通層及上述樹脂層，在大氣壓下將上述導通層與上述金屬 箔間之空間抽成真空，使上述導通層與上述金屬箔密貼之 第1製程，與 將上述金屬箔成型爲上述質地金屬層形狀之圖案（ patterning )之第 2 製程= 若據此，因藉張貼金屬箔成型圖案，就可簡單地形成 質地金屬層。 ?( 1 3 )於此半導體裝置之製造方法， j 設上述導通層及上述質地金屬層之製程也可包括； \ 在涵蓋上述導通層之形成領域之領域，設第1導電材 ^ 料之第1製程，與 ί Λ 不僅對應於上述導通層形成領域並且形成位於上述第 :: 1導電材料上形成有第1開口部之第1抗蝕劑層之第2製 了/ϋ又网中园囤家標準（CNS);U峽格（210 χ 297公笼） -8- I ； ! - ^----I I I I ----- — 1^ . ί請先閱讀背面之注意事項再填寫本頁) A7 4 52 8 6 _________B7 五、發明說明（6 ) 程，與 於上述第1開口部內在上述第1導電材料上設第2導 電材料之第3製程，與 將形成於對應於上述質地金屬靥之形成領域之第2開 口部之第2抗蝕劑層1形成於上述第1抗蝕劑層上之第4 製程，與 在上述第2開口部設金屬材料以形成上述質地金屬層 之第5製程，與 去除上述第1及第2抗蝕劑層，成型上述第1導電材 料之圖案，從上述第1導電材料之〜部分及上述第2導電 材料來形成上述導通層之第6製程。 【實施發明之最佳形態】 茲就有關本發明之較佳實施形態參照圖面說明如下。 (第1實施形態） 第1圖係表示有關本發明第1實施形態之半導體裝置 之圖。第1圖所示之半導體裝置，係對於半導體元件（半 導體晶片）1 0 0經由應力緩和機能裝設了塊件2 0 0者 。此形態雖然可說是具有應力緩和機能之浮片晶片（Πιρ chip )，但是也可分類爲 C S P ( Chip Size/Scale Package )。 半導體元件1 ο 〇係具有從閘等所構成之元件群（沒 有圖示）。在半導體元件100，形成有複數之電極 --- .¾ 闬中g國家標準（CnS)/u規格（210 x 297公餐> -9 - t請先閱讀背面之注意事項再填寫本頁) ^ii---訂---- -----線 _ '!α·一 . A7 B7 五、發明說明（7 ) 1 04。於半導體元件100形成電極1 04之面，係避 開電極1 0 4，形成有絕緣層1 0 6。可由矽之氧化膜形 成絕緣層1 0 6。按，作爲其他例也可使用矽之氮化膜或 聚醯亞胺等。在電極1 0 4連接配線層1 2 0，到避開電 極104之領域延伸有配線層120。配線層12 ◦係形 成於絕緣層106上。 於配線層1 2 0避開電極1 0 4之位置（部分或領域 )，設有導通層122。導通層122係可由包含Ni ， 包含Cu之合金，Cu，Ni ，Sn，軟焊料，Au，
Ag，F e ，Zn ，Cr及Co中之任一所形成。導通層 1 2 2之高度，係約1 以上，較佳爲約1 5Am以 上，更加爲2 0 μ ιώ。導通層1 2 2之高度，係約3 0 0 以上，較佳爲約2 0 0 以上，約1 〇 〇 /zm以下 時就可由簡單方法製造。導通層1 2 2也可成爲圓柱狀， 其直徑爲20〜100#m程度較佳。導通層122也可 爲直徑6 0 em程度，高度5 0 程度之圓柱狀。由於 導通層1 2 2成爲容易變形之形狀，就可消除由於其剪斷 所引起之導通不良。作爲導通層1 2 2之製造方法，就可 適用電解電鍍。 在導通層1 2 2上，例如由銅等設有質地金屬層 124。質地金屬層124係由超過導通層122之外周 輪廓大小所形成，而較導通層1 2 2更容易變形（彈性係 數爲低）。爲了容易使其變形，質地金屬層124係成爲 較導通層1 2 2更薄（高度低）形狀較佳。或，也可將質 >乂气弦4 φ丨5國家標浪（CN.SM!規格（210 X 297公复） -10 - 1 — ！'!--— ！killi — 訂 -----! 線· (請先閱讀背面之注意事項再填寫本頁) A? ____B7 _ 五、發明說明（8 ) 地金屬層1 2 4由容易變形之材料形成。質地金屬層 1 2 4也可不必成爲圓柱狀，其時也可以爲直徑6 0 程度而高度爲5 0 //m程度。作爲質地金屬層1 2 4之製 造方法，可適用電解電鍍。 在配線層1 2 0上，形成有例如由聚醯亞胺樹脂所成 之樹脂層1 2 6。樹脂層1 2 6係成爲配線層1 2 0之保 護膜之絕緣保護層。樹脂層1 2 6係設於導通層1 2 2之 周圍。樹脂層1 2 6也可形成在接觸於質地金屬層1 2 4 下面之全面。此時，施加於質地金屬層1 2 4之熱應力， 爲在質地金屬層1 2 4下面之全面被樹脂層1 2 6所吸收 ύ 或，如第2圖所示變形例，樹脂層1 2 5爲可離開質 地金屬層1 2 4設置。其時質地金屬層1 2 4爲容易變形 。，於第2圖，在絕緣層106上形成有另外絕緣層 1 0 8。將絕緣層1 0 6由矽氧化膜所形成，也可將絕緣 層108由聚醯亞胺形成。 或，如第3圖所示變形例，樹脂層1 2 7也可以接觸 於質地金屬層1 2 4之一部分。此時，於質地金屬層 1 2 4下面之導通層1 2 2之接合部分之周圍接觸於樹脂 層1 2 7 >也可以在質地金屬層1 2 4外周端部不接觸於 樹脂層1 2 7之構成。像這樣，若依據對於質地金屬層 1 2 4下面一部分接觸樹脂層1 2 7之構成時，就可達成 由樹脂層1 2 7之熱應力之吸收，與質地金屬層1 2 4之 變形容易度之調和。 ------------ ^------11 11 — — — —11^-. 〈請先閱讀背面之注意事項再填寫本頁) 表呔乐< tiS用* S因家標準（CNSM.丨規格（2丨0 X 297公蜚) -11 - ^528,
^528, ..I B7 五、發明說明（9 ) 在質地金屬層1 2 4上設有塊件2 0 0。塊件2 0 0 係軟焊塊件居多。例如將膏狀軟焊料等之軟焊載疊於質地 金屬層1 2 4加以加熱，熔化軟焊膏就可形成球狀塊件 2 0 0。供給軟焊膏時，可適用由軟焊膏印刷之方式。塊 件2 0 0係由超過導通層1 2 2外周輪廓大小所形成之情 形居多。塊件2 0 0與質地金屬層1 2 4接觸領域之投影 面積，爲較質地金屬層1 2 4與導通層1 2 2接觸領域之 投影面積爲大之情形居多。 若依據本實施形態，不僅熱應力導通層1 2 2會變形 ，並且，質地金屬層1 2 4也會變形。因在導通層1 2 2 周圍設有樹脂層1 2 6，所以，熱應力施加於導通層 1 2 2較施加於質地金屬層1 2 4爲多，由於質地金屬層 1 2 4會發生大的變形，所以，可吸收熱應力。其結果， 熱應力施加於導通層1 2 2之力量會減輕，而可抑制由於 導通層1 2 2之剪斷所引起之導通不良。 (第2實施形態） 第4 A圖〜第6 A圖係表示有關本發明第2實施形態 之半導體裝置製造方法之圖。本實施之形態，係如第4 A 圖所示1準備電極1 0 4，與形成連接於此電極1 〇 4之 配線層1 20之半導體元件100。按，在半導體元件 100形成有絕緣層106，在絕緣層106上形成有配 線層1 2 ◦。 接著，在避開電極1 0 4位置對於配線層1 2 0設置 n ϋ_ n ϋ , I n ϋ in n ϋ^*eJ< n i It n n I · (請先閱讀背面之沒意事項再填寫本頁)
Mi.#、遺用中3园家標革（CNS)..\4規格（mo X 297公釐） -12- A7 B7 五、發明說明（1〇 ) 導通層’而在導通層上設置質地金屬層。詳細係進行下面 之第1製程〜第6製程。 (第1製程） 如第4 A圖所示，至少位於配線層1 2 0上，在至少 包含導通層形成領域之領域，形成第1導電材料1 3 0。 第1導電材料1 3 0也可以形成在於半導體元件1 〇〇形 成電極1 0 4面之全面。作爲形成金屬膜1 3 0之方法， 雖然可適用澱積法或無電解電鍍等，但是，使用噴濺（ sputtering )法較佳。 (第2製程） 如第4 B圖所示，不僅對應於導通層之形成領域並且 形成位於第1導電材料丨3 0上所形成之第1開口部 1 3 2之第1抗蝕劑層1 3 4。作爲第1抗蝕劑層1 34 可使用感光性樹脂（光阻劑（photoresist ))。又，作爲 第1開口部1 3 2之方法，則可適用經由光罩進行曝光’ 顯像之光刻成像法（photo丨ithography )。或，由網版印刷 或轉印印刷也可形成形成有第1開口部1 3 2之第1抗鈾 劑層1 3 4。 (第3製程） 如第4 C圖所示，位於第1開口部i 3 2內在第 電材料1 3 0上設第2導電材料1 3 6。例如，將第 規格（210 X 297 公 f ) 13- ----— — — — — — — ^---- - -- 訂·！I - - (諝先閱讀背面之注意事項再填寫本頁) 452ε Α7 ________Β7 五、發明説明（11) (請先閱讀背面之：ix意事項再填寫本頁} 電材料1 3 0作爲電極，由於將第i開口部丄3 2內面浸 漬於電鍍液，就可形成第2導電材料136。此時，作爲 取出電極之方法，具有在第丨開口部i 3 2內面抵住接觸 針之方法，如打破第1抗蝕劑層丨3 4似地抵住接觸針之 方法等。或，也可以使用澱積，噴截或無電解電鍍形成第 2導電材料1 3 6。 (第4製程） 如第5 A圖所示，將形成對應於質地金屬層形成領域 之弟2開口部1 4 2之第2抗蝕劑層1 4 4，形成於第1 抗蝕劑層1 3 4。第2抗蝕劑層1 4 4爲可從作爲第1抗 蝕劑層1 3 4使用之材料來選擇。第2開口部1 4 2之形 成方法’係可適用第1抗蝕劑層1 3 4之第1開口部 1 3 2之形成方法。 (第5製程） 經濟部智慧財產局員工消費合作杜印製 如第5 B圖所示’在第2開口部1 4 2設金屬材料來 形成質地金屬層1 4 6。欲形成質地金屬層i 4 6之方法 爲可適用設置第2導電材料1 3 6時之方法。 (第6製程） 如第5 C圖所示’去除第1及第2抗飽劑層1 3 4， 144，形成第1導電材料13〇之圖案，而從第丄導電 材料1 3 0之一部分及第2導電材料丨3 6來形成導通曆 -14- i紙張尺度適用+國國家標準（CNS ) Λ4規格公董1 a Α7 Β7 五、發明说明（12) (請先閱讀背面之注意事項再填寫本頁) 148。作爲形成第1導電材料130圖案之方法，係具 有使用溶劑之方法，使用剝離液之方法，使用電漿（ plasma )之方法，蝕刻之方法，或組合這些之方法。 當結束以上製程時，就如第6 A圖所示，在導通層 148周圍設樹脂層150。樹脂層150係可由聚醯亞 胺，環氧’砂’苯醯環丁嫌.（benzo cyclobutene )等樹脂 形成。其形成方法雖然可適用浸漬法，軋輥塗層（rol] coat )法，噴霧法，殿積法，裝罐（potting )法等，但是適用 迴轉塗敷法較佳。又，不該沾附樹脂之處所，例如沾附於 質地金屬層1 4 6上面等時，可使用溶劑，電漿，蝕刻等 選擇性地去除樹脂。或，也可以使用樹脂暫且覆蓋質地金 屬層1 4 6全面之後，去除樹脂到質地金屬層1 4 6上面 露出來。或，也可以以機械方式硏磨，硏削，使質地金屬 層1 4 6之表面露出。 經濟部智慧財產局員工消費合作社印t 接著，如第6 B圖所示，在質地金屬層1 4 6上設置 塊件2 0 0。例如，也可以使用網版印刷或個別供給之方 法將軟焊膏載置於質地金屬層1 4 6上，而加熱此，來形 成球狀塊件2 0 0。或，也可以個別地供給熔化軟焊料， 或供給球狀軟焊料進行加熱。 若依據以上之製程所製造之半導體裝置，由於熱應力 而導通層1 4 8發生變形，並且，質地金屬層1 4 6也會 變形。因在導通層1 4 8周圍設有樹脂層1 5 0 ，所以熱 應力之大部分爲較導通層1 4 8更加施加於質地金屬層 146 ’因質地金屬層146會發生大的變形，所以，可 -15- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 45286 s A7 ___B7__'_ 五、發明説明（13) 吸收熱應力。其結果，施加於導通層1 4 8之熱應力會減 輕，而可抑制導通層1 4 8由於剪斷所引起之導通不良。 (第3實施形態） 第7 A圖〜第8 C圖係表示有關本發明之第3實施形 態之半導體裝置之製造方法之圖。 (設置導通層及上述樹脂層之製程） (第1製程） 如第7A圖所示，位於配線層1 2 0上將導通層之形 成領域成爲開口部1 6 2加以開口，以形成樹脂層1 6 0 (請先閲讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作社印製 (第2製程） 如第7A圖及第7B圖所示，將型板（stencil )之開 口部對準開口部1 6 2，而由刮漿板（squeegee ) 1 6 6 將導電漿1 6 8塡充於開口部1 6 2。亦即，進行網版印 刷。在此’導電漿1 6 8在黏合劑（binder )分散導電塡 充料所形成。若依據網版印刷在複數開口部1 6 2就可整 批塡充導電漿1 6 8。或，可進行分配（dispense )印刷 。分配印刷係開口部1 6 2深時所適用。 (第3製程） 如第7 C圖所示，加熱導電漿1 6 8，而硬化黏合劑 -16 - 本紙張尺度適用中國國家標率（CNS ) A4规格（210X297公釐） 4 經濟部智慧財產局員工消費合作社印製 5^36c A7 ________B7_ 五、發明説明（14) «又，也可以燒烤黏合劑，也可以熔化導電塡充料。例如 ，也可以對於導電漿1 6 8照射雷射。藉此，因導電漿 1 6 8會與配線層1 2 0面接觸，所以’可形成密貼於配 線層1 2 0上之導通層1 7 0。若依據以上製程，不需要 電鍍之製程就可形成導通層1 7 0。 (設質地金屬層之製程） (第1製程） 如第8Α圖所示，將避開與導通層1 7 0之接觸部分 設置接著劑之金屬箔172，張貼於導通層1 7 0及樹脂 層160上》將此製程在真空下進行。接著，將氣壓成爲 大氣壓，如第8 Β圖所示，將導通層1 7 0與金屬箔 1 7 2間之空間變成真空，使導通層1 7 0與金屬箔 1 7 2密貼。藉此，導通層1 70與金屬箔1 7 2間之電 阻値就會下降。 (第2製程） 如第8 C圖所示，將金屬箔1 7 2成形爲質地金屬層 176形狀之圖案。其後，在質地金屬層176上設塊件 。導通層1 7 0雖然由導電漿所構成，但是因具有質地金 屬層176 ，所以導電漿與塊件不會直接接觸。因此’例 如作爲導電漿使用銀漿，作爲塊件之材料使用軟焊料’而 成爲即使由熱使兩者熔化也不會摻混在一起。若依據本實 施形態，藉張貼金屬箔1 7 2成形圖案，就可簡單地形成 I ϋ n —^n ~ 訂 f請先閱讀背面之注意事項再填寫本頁) 本紙張尺度通用中國國家標準（CNS) A4規格（210X297公釐） -17- A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（15) 質地金屬層1 7 6。 第9圖係表示封裝有關本實施形態之半導體裝置1之 電路基板1 0 0 0。一般電路基板1 0 0 0係例如使用玻 璃環氧基板等之有機系基板。電路基板1 0 〇 0係例如由 銅所構成之配線圖案1 1 0 0形成爲所需電路，藉將該等 配線圖案與成爲半導體裝置1外部端子之塊件以機械方式 連接就可達成該等之電氣性導通。半導體裝置1係備有緩 和由電路基板1 0 0 0之熱膨脹係數，與半導體元件之熱 膨脹係數之差値所發生熱應力之功能。 第1 0圖係作爲適用具有本發明半導體裝置1之電子 機器1 2000，表示其筆記型個人電腦。 按’也可以將上述本發明構成要件「半導體元件」以 「電子元件」取代，而與半導體晶片同樣將電子元件（不 管主動元件或從動元件），封裝於基板來製造電子零件。 使用這種電子元件所製造之電子零件，例如，有電阻器， 電容器’電磁線圈，振盪器，濾光器，溫度感測器，熱敏 電阻器（ihermistor )，可變電阻器（varistor )，音量調 整器（volume)或保險絲等。 圖式之簡單說明 第1圖係表示有關本發明第1實施形態之半導體裝置 之圖’第2圖係表示有關本發明第1實施形態變形例之半 導體裝置之圖’第3圖係表示有關本發明第1實施形態變 形例之半導體裝置之圖’第4 A圖〜第4 C圖係表示有關 7 I ~·1τ111r- (諳先閱讀背面之注項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公着） -18- 452868 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（16) 本發明之第2實施形態之半導體裝置之製造方法之圖1第 5 A圖〜第5 C圖係表示有關本發明之第2實施形態之半 導體裝置之製造方法之圖，第6 A圖〜第6 B圖係表示有 關本發明之第2實施形態之半導體裝置之製造方法之圖， 第7 A圖〜第7 C圖係表示有關本發明之第3實施形態之 半導體裝置之製造方法之圖，第8 A圖〜第8 C.圖係表示 有關本發明之第3實施形態之半導體裝置之製造方法之圖 ’第9圖係表示封裝有關本實施形態之半導體裝置之電路 基板之圖，第1 0圖係表示備有有關本實施形態之半導體 裝置之電子機器之圖。 【符號之說明】 10 0 半導體元件，1 0 4 電極，1 2 0 配線 層’122 導通層，124 質地金屬層，126 樹 脂層’130 第1導電材料，132 第1開口部， 134 第1抗蝕劑層，136 第2導電材料，142 第2開□部，144 第2抗蝕劑層，146 質地金屬 層’ 1 6 0 樹脂層’ 1 6 2 開口部1 ，1 6 8 導電 漿’170 導通層，172 金屬箔，174 接著劑 '176 質地金屬層，200 塊件。 <請先«1讀背面之注意事項苒填寫本頁) ίτ 本紙張尺度適用中國國家標準（CNS ) Α4規格< 210X297公釐） -19-

Claims (1)

  1. 528 》|年气1月丨正/更正/補充 A8 B8 C8 D8 g-#秦员句手"月Θ日听是 修正本有-安内"‘是否准Γ^^。 六、申請專利範圍 附件1: 第88 104506號專利申請案 中文申請專利範圍修正本 民國纠年Π月修正 1 · 一種半導體裝置，其係包括： 具有電極之半導體元件，與 連接於上述電極之配線層，與 在避開上述電極之位置設於上述配線層之導通層’與 以超過上述導通層外周輪廓之大小設於上述導通層上 ，較上述導通層更容易變形之質地金屬層，與 設於上述質地金屬層上之塊件，與 設於上述導通層周圍之樹脂層。 2 ·如申請專利範圍第1項之半導體裝置，其中上述 塊件，係以超過上述導通層外周輪廓之大小形成， 上述塊件與上述質地金屬層所接觸領域之投影面積’ 爲較上述質地金屬層與上述導通層所接觸領域之投影面積 爲大之半導體裝置。 3 .如申請專利範圍第1項之半導體裝置，其中上述 樹脂層，係接觸於上述質地金屬層下面之至少一部分之半 導體裝置。 4 .如申請專利範圍第2項之半導體裝置，其中上述 樹脂層，係接觸於上述質地金屬層下面之至少一部分之半 導體裝置。 5 ·如申請專利範圍第1項之半導體裝置，其中上述 本紙張尺度通用中國國家標準（CNS ) Α4規格（210x2g7公釐）-1 - !.- I -- · - - - ΙΓΙ II ^^1 I 士.t/ ----------- ------ I : I I I X» - I m I Hi . > . (請先閱讀背而之注意事項？，.填鴻本頁) "^部皙慧財是"員工消費合作社印製 AS B8 C8 D8 45286 i 六、申請專利乾圍 樹脂層，係設於從上述質地金屬層下面離開之半導體裝置 〇 6 .如申請專利範圍第2項之半導體裝置，其中上述 樹脂層，係設於從上述質地金屬層下面離開之半導體裝置 〇 7 _如申請專利範圍第1項，第2項，第3項，第4 項，第5項，第6項之任一項之半導體裝置，其中在上述 質地金屬層下面與上述樹脂層之間設有接著劑。 8 .如申請專利範圍第1項，第2項，第3項，第4 項，第5項，第6項之任一項之半導體裝置，其中上述導 通層係其高度爲1 2〜3 0 0 "m程度，直徑爲2 0〜 lOO^m程度之半導體裝置。 9 .如申請專利範圍第7項之半導體裝置，其中上述 導通層係其高度爲1 2〜3 0 0 程度，直徑爲2 0〜 1 0 0 Am程度之半導體裝置。 1 0 . —種電路基板，係形成有配線圖案之電路基板 ，藉由將包含：具有電極的半導體元件，和連接於前述電 極的配線層，和設在前述配線層上之避開前述電極的位置 之導電層，和設在前述導電層上，其大小超過前述導電層 的外周輪廓，且較之前述導電層更容易變形的質地金屬層 ，和設在前述質地金屬層上的塊件，和設在前述導電層的 周圍的樹脂層之半導體裝置，利用前述配線圖案與前述塊 件的電性連接而被裝設在該電路基板上者。 1 1 · 一種電子機器，其具備有：包含具有電極的半 本紙張尺度適用中國國家標準（CNS > Α4規格（2】0χ：；π公釐）-2 - ,---^-------^------IT----.I-10 (請先閱讀背而之注意事項再4寫本頁) 部智慧財4局Μ工消費合作社印製 452868 A8 B8 C8 D8 經濟部皙慧財-i^jM工涓費合作社印¾ 六、申請專利範圍 導體元件，和連接於前述電極的配線層，和設在前述配線 層上之避開前述電極的位置之導電層，和設在前述導電層 上，其大小超過前述導電層的外周輪廓，且較之前述導電 層更容易變形的質地金屬層，和設在前述質地金屬層上的 塊件，和設在前述導電層的周圍之樹脂層之半導體裝置。 1 2 . —種半導體裝置之製造方法，其係包括； 準備電極與形成連接於上述電極之配線層之半導體元 件之製程，與 在避開上述電極之位置於上述配線層設置導通層之製 程，與 以超過上述導通層外周輪廓之大小，並且，將較上述 導通層更容易變形之質地金屬層設置於上述導通層上之製 程，與 在上述質地金屬層上設置塊件之製程，與 在上述導通層周圍設置樹脂層之製程。 1 3 .如申請專利範圍第1 2項之半導體裝置之製造 方法，其中設置上述導通層及上述樹脂層之製程，係包括 1 位於上述配線上將上述導通層形成領域作爲開口部加 以開口，以形成上述樹脂層之第1製程，與 使用印刷在上述開口部，塡充對於黏合劑分散導電塡 充料所成之導電漿之第2製程， 加熱上述導電漿，硬化上述黏合劑而密貼於上述配線 之第3製程》 本紙伕尺度適用中國國家標準（CNS ) A4規格（210x29,公釐）-3 - -------.-----裝------訂----.--Γ--線 (請先閱讀背面之注意事項再填舄本頁) 4528 A8 BS C8 D8 六、申請專利範圍 1 4 .如申請專利範圍第1 3項之半導體裝置之製造 方法，其中在上述第3製程’溶解上述導電塡充料而密貼 於上述配線之半導體裝置之製造方法。 1 5 .如申請專利範圍第1 2、 1 3或1 4項之半導 I體裝置之製造方法，其中設置上述質地金屬層之製程，係 i i 設置上述導通層及上述樹脂層之後，將避開與上述導通層 之接觸部分設接著劑之金屬箔，在寘空下張貼於上述導通 層及上述樹脂層上，在大氣壓下將上述導通層與上述金屬 箔間抽成真空，以密貼上述導通層與上述金屬箔之第1製 程，與 將上述金屬箔形成爲上述質地金屬層形狀圖案之第2 製程。 1 6 .如申請專利範圍第1 2項之半導體裝置之製造 方法，其中設置上述導通層及上述質地金屬層之製程，係 包括： 在包含上述導通層形成領域，設置第1導電材料之第 1製程，與 不僅對應於上述導通層形成領域並且形成形成位於上 述第1導電材料上之第1開口部之第1抗蝕劑層之第2製 程，與 位於上述第1開口部內而在上述第1導電材料上設置 第2導電材料之第3製程，與 將形成對應於上述質地金屬層形成領域之第2開口部 之第2抗蝕劑層，形成於上述抗蝕劑層上之第4製程’與 本紙張尺度適用中國國家標準（CNS > A4規格（210X 2V?公瘦）-4 - -------------裝------訂----；I"-線 {請先閱讀背而之注念事項再填{:"本頁) "-部贺慧財是":肖工消費合作社印製 8 8 8 8 ABC D 45286( 六、申請專利範圍 在上述第2開口部設置金屬材料以形成上述質地金屬層之 第5製程，與 去除上述第1及第2抗蝕層，成形上述第1導電材料 之圖案，從上述第1導電材料之一部分及從上述第2導電 材料形成上述導通層之第6製程。 --------装------IX------1^ (請先閱讀背HJ之注意事項再項(：|'本頁) ^.^部智总財4咼员工消費合作社印製 本紙伕尺度適用中國國家標準（CNS ) A4規格（210X；^公釐）-5 -
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