JPS5789244A - Formation of protruded electrode - Google Patents
Formation of protruded electrodeInfo
- Publication number
- JPS5789244A JPS5789244A JP55165241A JP16524180A JPS5789244A JP S5789244 A JPS5789244 A JP S5789244A JP 55165241 A JP55165241 A JP 55165241A JP 16524180 A JP16524180 A JP 16524180A JP S5789244 A JPS5789244 A JP S5789244A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- aluminum electrode
- gold
- psg
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent breakage of interconnections for an aluminum electrode caused by etching solution by forming a protruded electrode on a polyimide resin layer which is formed on a PSG layer on which an opening is provided over an aluminum electrode. CONSTITUTION:The opening is provided on the PSG layer 4 and the polyimide resin layer 10 which are formed on a semiconductive substrate 1 on which the aluminum electrode 2 has been deposited. Next, after a chromium layer 5, a copper layer 6 and a gold layer 7 are evaporated successively over the whole surface, a thick protrusion of gold 9 is formed by a plating process utilizing photoresist. After this, the chromium, copper and gold layers are removed by etching except those underneath the protrusion. Thus, it can be prevented to break the interconnection on the aluminum electrode during the etching process resulting from pinholes in the PSG layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55165241A JPS5789244A (en) | 1980-11-26 | 1980-11-26 | Formation of protruded electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55165241A JPS5789244A (en) | 1980-11-26 | 1980-11-26 | Formation of protruded electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5789244A true JPS5789244A (en) | 1982-06-03 |
Family
ID=15808548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55165241A Pending JPS5789244A (en) | 1980-11-26 | 1980-11-26 | Formation of protruded electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5789244A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6317545A (en) * | 1986-07-10 | 1988-01-25 | Toshiba Corp | Forming method of solder bump |
EP1005082A4 (en) * | 1998-03-27 | 2001-08-16 | Seiko Epson Corp | Semiconductor device, method for manufacturing the same, circuit board and electronic apparatus |
-
1980
- 1980-11-26 JP JP55165241A patent/JPS5789244A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6317545A (en) * | 1986-07-10 | 1988-01-25 | Toshiba Corp | Forming method of solder bump |
EP1005082A4 (en) * | 1998-03-27 | 2001-08-16 | Seiko Epson Corp | Semiconductor device, method for manufacturing the same, circuit board and electronic apparatus |
US6414390B2 (en) | 1998-03-27 | 2002-07-02 | Seiko Epson Corporation | Semiconductor device and method of manufacturing the same, circuit board and electronic instrument |
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