TW447183B - Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks - Google Patents
Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks Download PDFInfo
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- TW447183B TW447183B TW088114962A TW88114962A TW447183B TW 447183 B TW447183 B TW 447183B TW 088114962 A TW088114962 A TW 088114962A TW 88114962 A TW88114962 A TW 88114962A TW 447183 B TW447183 B TW 447183B
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- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 93
- 239000000463 material Substances 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000004566 building material Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000005693 optoelectronics Effects 0.000 claims description 10
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000013589 supplement Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000047 product Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- 238000009825 accumulation Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 43
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
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- 238000000354 decomposition reaction Methods 0.000 description 7
- 229910005540 GaP Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
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- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
- H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
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- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Description
44718 3 A7 B7 <?0 r 經濟部智慧財產局員工消費合作社印製 五、發明說明(1)
MjtA盡邦赞助研究舆發屐針割下之;at利的簦明 本發明係為依國防先進研究計劃屬(DARPA)所授與之 第MDA972-96-3-0014號合約,在政府的支持下所完成者。 聯邦政府對於本發明享有某些權利。 發明领域 本發明係關於特別有關對於AlxGayInzN元件之兩侧提 供向品質反射表面之光發射領域β 背景 一垂直空腔光電子結構由一插入封閉層的發光層所形 成的主動區域所構成’該封閉層可被摻雜、未被摻雜或含 有一 ρ-η接合面。該結構亦包含至少一面在垂直於發光層 之方向上形成Fabry-Perot空腔之反射鏡。在 GaN/AlxGaylrizN/AlxGahNC其中在 AlxGayInzN 中 x+y+z=l, 並且在AlxGa^N中X芸1)材料系統中製造垂直空腔光電子 結構會具有遠離其他瓜-V材料系統置放該結構之挑戰, 而難以生成具有高光學品質之AlxGayInzN結構。電流散布 對AlxGayInzN元件具有主要的利害關係。在p_型材料中之 橫向電流散布比在η-型材料中小〜30倍。此外,因為元件 為了達到最佳的散熱而需要被安裝成接合面朝下,故許多 基材之熱導率增加了元件設計的複雜性。 一種例如垂直空腔表面發射雷射(VCSEL)之垂直空腔 光電子結構要求尚品質的鏡子’例如99.5 %的反射率。一 本紙張K改過用中關家標準(CNS)A4規格(½ X 297公笼)' (請先閲讀背面之注意事項再填寫本頁) -裝--------訂--------- 4 經 濟 部J 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 A7 B7 五、發明說明(2) 種達至向品質鏡子之方法是透過半導體生成技術。為達到 適合VCSELs(>99%)之分佈布雷格反射器(DBRs)所需的高 反射率,對於半導體AlxGayInzN DBRs的生成會有重要的 材料問題,其係包括破裂與導電率。這些鏡子要求許多交 替的鋁銦鎵氮化物組成物(AlxGayInzN/Alx,Gay,Inz ’ N) 之節/層。與半導體DBRs相對照,介電DBRs(D-DBR)被相 地直接製造具有AlxGayItizN系統所跨的光譜範圍中超過 99%的反射率。這些鏡子典型地藉由蒸發或藏鐘技術而被 積’但MBE(分子束蠢晶 ’ molecu丨ar beam epitaxia丨)與 MOCVD(金屬-有機物化學氣相沉積,metal-organic chemical vapor deposition)亦可以被使用。然而,僅有主 動區域的一側可以使用D-DBR沉積,除非生長基材被移 除。右可st在A】xGayInzN動區域的兩側上結合與/或沉積 D-DBRs,則製造AlxGayInzN垂直空腔光電子結構會是更 加容易。 晶圓結合可以被分成兩個基本類別:直接晶圓結合以 及金屬晶圓結合。在直接晶圓結合中,兩晶圓經由於接合 界面處的質量傳送而被溶合在一起。直接晶圓結合可以在 半導體、氧化物及界電材料的任何組合間被執行。其通常 是在高溫(>4〇0°C)並在單軸壓力下被完成。—種合適的直 接晶圓結合技術被K1Sh等人在美國專利第5,5〇2,3〗6號中揭 露。在金屬晶圓結合中’-金屬層被沉積在兩結合基材之 間,以使其粘著。-金屬結合之例示為倒裝片接合,苴係 為-種使用在微粒與光電子工業中,以將—元件面朝;地
^--------^---------線------------- n I n i n n I I— n (請先閱讀背面之注意事項再填寫本頁) I 447183 A7 B7
Pc. ' r日修^ 丄/拗龙 ,.*1. ' 五/、發明說明(3) (請先閱讀背面之注意事項再填寫本頁) 附著至基材上之技術,該例示係被Yablonavitch等人揭露 於 1990年版 Applied Physics Letters 第 56冊第 2419-2421 頁 中。因為倒裝片接合被用來改善一元件的散熱性,基材之 移除會視元件結構,以及習慣上僅對導電與機械堅固的金 屬結合層之要求而定。 在Dudley於 1994年版之Applied Physics Letters第 64冊 No.12 第 1463-1465 頁中戶斤發表之 ’’Low threshold, wafer fused long wavelength vertical cavity lasers” 中教示,將 AlAs/GaAs半導體DBRs直接晶圓結合至垂直空腔結構之 一側上,而在Babic等人於1995年11月版之IEEE Photonics Technology Letters 第 7 冊 No.ll 中所發表的”Room-Temperature Continuous-Wave Operation of 1.54 β m Vertical-Cavity Lasers”中教示直接晶圓結合半導體DBRs 至InGaAsP VCSEL的兩側上,以使用在AlAs/GaAs之間大 的折射率變化。如將會說明者,晶圓接合D-DBRs至 AlxGayInzN比半導體至半導體晶圓結合更複雜許多,並在 此技藝中先前並不知曉。 經濟部智慧財產局員工消費合作社印製 在Clma等人於1994年12月版之IEEE Photonics Technology Letters 第 5 冊 No. 12 中所發表的 ”Dielectrically-B在使用應變補償多重量子井之GaAs上介電結合長波長垂 直空腔雷射”揭露AlAs/GaAs半導體DBRs藉由旋塗式玻璃 層而與InGaAsP雷射連結"旋塗式玻璃對於在主動層與 DBR之間的VCSEL中之結合並不是一種適合的材料,因 為難以控制旋塗式玻璃精確的厚度,因而對於VCSEL空 本紙張尺度適用中固國家標準(CNS)A4規格(210 X 297公釐) 經濟部智慧財產局員工消費合作社印*)衣 -—__B7 &本1曰修正/更正/補》 五、發明說明(4) 腔所需要的臨界層控制無效。此外,玻璃的性質會是非均 一性’而造成在空腔中的散射與其他損失。 具有足夠VCSEL用之反射率’例如;>99%之半導體DBR 鏡子之AlxGai_xN/GaN對的光學鏡子生成為困難者。參考 第1圖’反射率之理論計算建議達到所要求的高反射率, 一高指數對比被要求可以藉由增加低指數AlxGai xN層之 A1組成與/或藉由包括更多層節(取自Ambacher et ai.,MRS Internet Journal of Nitride Semiconductor Research, 2(22) 1997之材料性質)而被提供,這些方法招致重要的考驗。 若電流將會透過DBR層而被傳導,重要的是為導電 者。為了充分地傳導,AlxGa^N層必須被充分地摻雜。 除非AI組成被減少到對於Si(n-型)摻雜低於約50%以下, 而對於Mg(p-型)摻雜約2〇。/。以下,否則導電率不足夠。然 而’如第1圖所示’需要使用低八丨組成層而達到足夠的反 射率之層節數目要求大的AlxGai χΝ材料之總厚度,以增 加蟲晶層破裂的風險(由於在Α1Ν與GaN之間相對大的晶格 錯配合所造成)’並減少組成控制。實際上,第1圖之
Al.30Ga.70N/GaN積材早已是〜2.5#m厚,且與VCSEL之足 多句的反射率相差甚遠。因此,根據此層對之高反射率Dbr 要求顯著大於2.5 // m的總厚度,並且只要在A1N與GaN生 成條件之間與材料性質發生錯配合的情況下,便難以可靠 地生成。若層未被推雜’即使破裂未大到而成為—個問題, 級成控制與AlN/GaN生成溫度仍對生成高反射率DBRs造 成大考驗。因此’即使在DBRs不需要傳導電流的應用下, 本尺度通用τ國函取標单(cns)A.丨規格κ 297公釐 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 447183 - A7 —. —___;__ B 如年厂月c曰修正/更正./補充 一— 五、發明說明(5) 在AlxGayInzN材料系統中具有反射率>99%之半導體鏡子 積材未被證實。為此原因,以介電體為主的〇]611鏡子為較 佳者。 總結 至少一鏡子積材,例如一介電分佈布雷格反射器(D_ DBR)或複合D-DBR/半導體DBR,插在一 A〗xGayInN主動 區域與一主基材之間。一晶圓結合界面被定置在主基材與 主動區域之間的某處^ —任意的中間結合屠與晶圓結合界 面相鄰,以適應於晶圓結合界面處的應變與熱係數錯配 合。一任意的鏡子積材相鄰於AlxGayinzN主動區域而被定 置。主基材或中間結合層因為順性而被選擇。 前述發明之一實施例由一具有被定置成與AlxGayI^N 主動區域相鄰之晶圓結合界面的元件所構成,該 AIxGayInzN主動區域在例如aiz〇3之犧牲基材上而被製 造。附著於主基材上之鏡子積材被直接晶圓結合至 AlxGayInzN主動區域上。接著,犧牲基材被移除。任意的 鏡子積材被附著至AlxGayInzN主動區域的頂部上。供附著 用之技術包括結合 '沉積及生成。電氣接點被加到化型與 P-型層上。 對於具有被定置成與主基材相鄰之晶圓結合界面之另 一替實施例,鏡子積材被附著在AlxGayInzN主動區域上。 若採用直接晶圓結合,被選擇而具有合適的機械性質之主 基材被晶圓結合至鏡子積材上。另—方面,金屬結合可以 本紙張尺度適用辛國國家標準 (CNS)A4規格(210 X 297公爱) <請先閱讀背面之注意事項再填寫本頁) -^--------^--------- 經濟部智慧財產局員工消費合作社印製 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(6) 被用來將主基材結合至鏡子積材上。犧牲基材被移除。一 任意的鏡子積材被附著在AlxGayInzN主動區域的頂部上。 電氣接點被加到η-型與p-型層上。在直接晶圓結合而得到 所欲性質的情況下’主基材之選擇是一個重要的教示。另 外的實施例包括在DBR之内定置晶圓結合界面。 «式之ffi短說明 第1圖例示理論反射率對AlN/GaN與A1 3〇Ga.7()N/GaN DBRs之波長。 第2圖例示本發明之較佳實施例。 第3 A-F圖圖示地描述對應本發明之流程圖。 第4 A-F圖圖示地描述對應本發明之另一個流程圖。 第5圖顯示在一被沉積在〇aN/Al203結構上之D-DBR 與一 GaP主基材間之直接晶圓結合界面的掃描式電子顯微 鏡(SEM)橫戴面圖。 第6圖顯不具有一被金屬結合至主基材上經沉積的d_ DBR主動區域的SEM橫截面圖。該基材已被移除且第二D_ DBR相對於第一 d-DBR已被沉積在AlxGayInzN之側邊上。 第7圖顯示來自第6圖所述之元件從400至5 〇〇nm的光 學發射光譜。其中典型的高峰描述垂直空腔結構。 圖式之詳細說明 介電分佈布雷格反射器(D-DBR)由低損失介電體之積 材對所構成,在此對材料的其中之一具有低折射率,而一 本紙冰、.‘艾適用申园國家標準ίΟ·»Λ丨規格(Π0 * 29:•公釐) -------------裝·-------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 9 經濟部智慧財產局員工消費合作钍印製 447 1 8 3 A7 ------— B7__年f月7曰修正/更正/補兔 五、發明說明(7) 具有高折射率。某些可能的介電DBR鏡子以與二氧化鈦 (Ti〇2)成對的二氧化外Si〇2)層為根據,:氧化錯(z叫、 氧化鈕(TaA)或氧化給(Hf〇i)可以達到藍色垂直空腔表面 發射雷射(VCSEL)所要求的高反射率,例如>99 5%,或是 共振空腔發光元件(RCLED)所要求者,例如〜6〇%或更高。 因為SiOVHfO2積材對可以被用來生產在35〇 5〇〇nm的波長 範圍中具有超過99〇/°的反射率之鏡子積材,故對Si02/Hf02 積材對具有特別的興趣。以Si〇2/Hf〇2之交替層所製成之 D-DBRS已顯出直至1050艽會具有機械穩定,而對之後的 處理提供挽曲度。 一較佳實施例顯示於第2圖中。在第2圖中,一第一鏡 子積材14’例如具有高反射率之DBR,被附著至一合適的 基材上β鏡子積材14可以由一種或多種下列之材料所構 成:介電體、半導體以及金屬。第一鏡子積材14被晶圓結 合至被生成於一犧牲基材上之AlxGayInzN主動區域18中的 頂部p-層18b上。AlxGayInzN垂直空腔光電子結構18已為 了在所欲之波長下具有高增益而被設計。晶圓結合界面16 必須具有非常低散射之極好的光學品質。晶圓結合界面16 可以包括一任意的中間結合層(未顯示)。一例如D-DBR(於 第2圖所示)之任意的第二鏡子積材20被附著至在相對於第 一鏡子積材14之一側上的AlxGayInzN垂直空腔光電子結構 18上。任意的第二鏡子積材20與A〗xGayInzNi動區域18之 η-與p-型ISa、18b層會被形成圖案並被蝕刻,以提供歐姆 接觸用之區塊。對於一 VCSEL,鏡子必須具有非常高的 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) . 裝--------訂---------"- (請先閱讀背面之注意事項再填寫本頁) 10 經濟部智慧財產局員工消費合作社印製 五、發明說明(8) 反射率>99%。對於一 rCled ’鏡子反射率之要求被放寬 (>60%) 〇 第2圖所示之另一種方法係為供欲被附著至 AlxGayInzN主動區域上之鏡子積材14之用。接著,晶圓結 合界面16接著位於鏡子積材14與主基材12之間。此結構亦 會具有一任意的第二鏡子積材2〇β欲連同第一或第二種方 法一起被使用之又另一種方法為在一或兩鏡子積材的令間 處具有一直接晶圓結合。數種晶圓結合界面1 6可能的配置 被顯示於第2圖中。 電流集中可以在η-型或ρ-型主動區域材料中藉由插入 一 A】xGayInzN層而被達成,其係可以被蝕刻與/或氧化,以 改善電流與光學限制,因而減少雷射門檻或改進元件效 率。當一D-DBR與/或未摻雜之半導體DBR被使用時’此 類層的合併是重要的,因為沒有電流透過它們而被傳導。 空腔根據接觸層所需的厚度而可以是單一或多重波長空 腔,以得到適合的低正向電壓。上述許多結構上的變化為 可能者。一相似的結構亦可以口—與^型材料轉換的方式而 被製造。 第4A-F圊圖示地描述對應本發明之一實施例的流程 圖。在第4A圖中,一AlxGayInzN主動區域在例如Al2〇3的 犧牲基材上被製造。在第4B圖中,一第一鏡子積材被附 著至一主基材上。供附著用之技術包括結合、沉積與生成。 在第4C圊中,該第一鏡子積材經由晶圓結合而被附著至 Al,GayInzN主動區域上。對於—VCSEL,直接晶圓結合鹿
褒--------訂---------線 (請先閱讀背面之注意事項再填寫本頁J 11 A471 8 3 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(9) 該被使用,因為具有低光學損失是重要的因素。在第4D 圖中,該犧牲基材被移除。在第4E圖中,任意的第二鏡 子積材被附著至AlxGayInzN主動區域的頂部上。在第仆圖 中,電氣接點被加到任意的第二鏡子積材或AlxGayInzNi 動區域上。形成圖案來界定元件面積並暴露接觸層亦可以 在處理流程_被執行。 第3A-F圖圖示地描述另一處理流程圖。在第3A圖中, 一 AlxGayInzN主動區域在—犧牲基材上方被生成。在第3B 圖中’該第一鏡子積材被附著至AlxGayInzN主動區域上。 在第3C圖中’ 一主基材經由直接晶圓結合或金屬結合而 被附著至第一鏡子積材上。因為晶圓結合是在光學空腔的 外部’由於晶圓結合所造成的損失較不重要。在第3D圖 中’該犧牲基材被移除。在第3E圖中,任意的第二鏡子 積材被附著至AlxGayInzN主動區域上。在第3F圖中,電氣 接點被加到任意的第二鏡子積材或AlxGayInzN主動區域 上°形成圖案來界定元件面積並暴露接觸層也可以在處理 流程中被執行。 供直接晶圓結合用之主基材的選擇是重要的,並被下 列數種性質所影響:質量傳送、順性、及應力/應變減緩。 該主基材可以選自一個包括磷化鎵(GaP)、砷化磷(GaAs)、 墙化铜(InP)、或矽(Si)之群組。對於si,基材較佳的厚度 在1000A與50 之間。 質量傳送在直接晶圓結合扮演一個重要的角色。在標 準瓜-V至ΙΠ-V的直接晶圓結合,或是至介電結合 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) · . — - M,--------^---------岭、 (請先閱讀背面之注意事項再填寫本頁) 12 A7
五、發明說明(10) 中,至少一表面在足夠低來維護層品質的溫度下呈現顯著 的咸量傳送。相反地,AlxGayIl^N*大多數的介電材料在 與維持高In含量的AlxGayInzN主動區域之完整性—致的溫 度下(<1000。(:)不會進行顯著的質量傳送。在—種或兩種 結合材料中質量傳送的缺乏會阻礙晶圓的附著性。對於此 之模式是當兩種材料在結合溫度下皆呈現出顯著的質量傳 4兩種材料的結合可以跨越界面而重新排列成最強的 結合。當僅有一種材料呈現顯著的質量傳送時,僅此一種 材料的結合可與其他材料的表面結合對準。在此情況下, 難以形成具有高機械強度的晶圓結合。 順性是材料改變原子或巨觀級形狀而適應應力或應變 之能力。為了本發明之目的,順性被界定以籍由具有比結 5恤度低的熔點之材料,或在材料在低於結合溫度下具有 一可延展/脆化的變換之時,或於基材比〜⑼以爪薄時而被 達成。 寸於GaP、GaAs、及InP基材之標準羾_ v晶圓結合一 叙疋在400-1 〇〇〇°c的溫度下執行,於此溫度下兩種基材係 白為順性。至少一種結合材料的順性對於晶圓結合是必須 的,因為材料具有原有的表面粗糙度與/或缺乏微觀或巨 觀級上的平坦度。在looot:的溫度下’於N2環境下回火20 刀知的AlxGayInzN結構會造成約2〇%pl強度的減少。因 此,期望將結合溫度保持在1〇〇〇<t以下。在A12〇3基材上 生成以GaN為主的材料在低於1〇〇(rc的溫度下不為順性^ 用來製造供寬帶間隙半導體用之高反射率d_DBRs的介電 ⑤張尺度適用1*.,國$標iS. i 賴— ^--------t---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 297 13 447183 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(II) 材料在低於looot下典型為非順性。因此,結合/支撐基 材與/或中間結合在這些溫度下為順性是重要的。 熔點是一個判定材料順性之性質^例如,對於下列材 料,GaAs(丁m=15I0K)、GaP(Tm=175〇K)、以及 Inp (Tmi 1330K),可以瞭解順性的相對次序是Inp、GaAs、eap, 而InP是具有最大順性者。材料一般在低於熔點的溫度下 會進行可延展/脆性轉變.在高溫下這些材料的順性必須 以其中一元素的解吸附作用來被平衡。即使Inp在丨〇〇〇!>c 下為順性,但材料會在該溫度下劇烈地分解,其係因為磷 的解吸附作用的緣故《與此類材料之結合應該被限制在比 結合期間於周圍壓力下之解吸附作用溫度約兩倍的溫度 下。因此,材料之選擇必須與所要求的順性與結合溫度兩 者皆相容。 非常薄的基材也可以是順性。例如<5〇卩爪之薄梦為 順性,因為即使是在高曲度半徑處,若基材非常薄則應力 小。此技術對於具有高斷裂硬度之材料非常有用,例如砂 (U270N/mm2)或AlxGayInzN。然而,具有低斷裂硬度之材 料,例如GaAs(2500N/mm2)在操作期間容易斷裂。對於具 有厚度>50 # m的矽,即使小曲度半徑在材料中會造成高 應力’而使材料斷裂。相同的方式會應用到其他可能的基 材選擇物之材料上。 應力與應變之減緩是因為在生成於八丨2〇3上之GaN中 的高錯配合應力,以及在AlxGayInzN與其他最適合的基材 物質間的熱膨脹係數(CTE)而惡化。與其他被晶圓結合之 本紙張尺度適用中國國家標準(CNS)A4規格(210 >= 297公釐) I. ^ —^-------. 訂 ----—II__. (請先閱讀背面之注意事項再填寫本頁) 14 ' ---------年、月M修正/更£/補克 五、發明說明(I2) --------------裝--I (請先閱讀背面之注意事項再填寫本頁) 半導體材料對照’在AlxGayinzN與其他半導體材料之間的 CTE錯配合比較大;應力藉由沿著纖鋅礦材料之咖平面 之不同的CTE錯配合而被合成。在晶圓結合至不同基材
(GaAs CTE-5.8、GaP CTE=6.8、ΙηΡ=4.5χ ΙΟ.6/。。)上之GaN 中的應力(CTE=5.59,a-平面/3.17xi〇-6,c_平面/t)需要 以j部的應力緩減為條件,因為主基材的CTE錯配合應該 緊密地配合兩GaN平面之錯配合。此應力應該在順性材料 令或是藉由提供局部應力緩減,例如將至少一面結合界 面幵v成圖案之方式而被適應,該順性材料係於中間結合層 中疋軟的或在結合溫度下結合界面處為液體。中間結合層 選自個包括含有鹵化物(例如CaF2)、ZnO、銦(in)、錫 (Sn)、鉻(cr)、金(Au)、鎳(Ni)、銅(Cu)及—奵材料之合 金與介電體之群組。 -線- 經濟部智慧財產局員工消費合作社印製 電流分布對於以GaN為主的元件是另一個主要的關 聯。在p-形材料中的橫向電流分布為〜3〇χ,小於在心型材 料中的橫向電流分布。雖然在主動層之兩側上製造高反射 率的鏡子對於一良好的空腔是必須者,但橫向?_層電流分 布之問題會因為D-DBRs的絕緣本質而變得更嚴重。—種 在P-層中改進電流分布之方式是製造導電透明半導體之複 eDBR與"電積材。邊積材的半導體部分藉由增加層的 厚度而改善電流分布,而介電基材改進低半導體反射率, 而達到高於99%的總鏡子反射率。雖然因為n_型層具有較 向的導電度故不是很重要’但此相同的步驟可以被應用到 η-型鏡子上。 15 447183 A7 B7 年Γ月V日修正/更正/補充 經濟部智慧財產局員工消費合作社印製 五、發明說明(I3) 電流聚集層之加入會藉由僅將電流導入空腔中而進一 步改善電流分布,並且對於VCSEL會是必須的。該電流 聚集層可以被用到帶有或未帶有複合半導體/介電dbr之 垂直空腔光電子結構上,並且可以被加到一複合鏡子之半 導體部分中。雖然電流聚集層會被包括在封閉層之卜與心 層兩層中,但因為較低的導電度,故此在化封閉層中是最 有效的。 若一 D-DBR被附著到主動區域的兩侧上時,則支撑 基材為必要者’因為原本的主基材必須被移除。有數種用 以移除藍寶石基材的方法’該藍寶石典型被作為生長基 材。於下概述的方法僅為可以被用來移除生長基材之技術 的子集,該生長基材以可以是除了藍寶石以外之材料。 在雷射炫化中,一種由Wong, et al,與Kelley, et al.,所 揭露具有一波長係對於藍寶石基材會呈透明,但對於相鄰 於基材之半導體層則否之雷射的技術會照亮該結構的背面 (藍寶石侧)。雷射能量不能貫透相鄰的半導體層。若雷射 能量足夠’相鄰於藍寶石基材之半導體層會加熱到其分解 點。對於GaN是與藍寶石基材相鄰之層的情況,位於界面 處之層會分解成Ga與N,而留下在界面後的Ga。Ga金屬 接著會被熔化,並且藍寶石基材會被從該層結構的剩餘部 分上移除》相鄰於藍寶石基材之層的分解會視雷射能量、 波長、材料分解溫度、及材料吸收而定。藍寶石基材藉由 此種技術而被移除,而使得D-DBR能夠附著至主動區域 的其他側上。然而,重要的是,VCSEL界面有最小的損 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) . ,—· ί 裝--------訂. (請先閱讀背面之沒意事項再填寫本頁) 16 Λ A7 B7 五、發明說明(14) 耗(<0.5%)並非常的平滑,而使空腔的共振特性增加到最 大。此雷射溶化技術具有許多會使雷射界面缺乏VCSEL 需要的平坦度之設計變因。此外,VCSELs具有非常緊密 的厚度约束。有數種雷射可以被用來減缓這些問題之方 式。 與犧牲生長基材相鄰之層被界定成一犧牲層,若該層 的厚度會使其將因雷射而被完全地分解。在文獻(w〇ng,et al _)中所發表的結果表示將會被完全地分解的層厚度為 500人,但是此數值將根據雷射能量、雷射波長、及與基 材相W之層的吸收與材料分解溫度。相鄰於犧牲層為阻絕 層之層(相對於該基材)被選擇,其係為阻絕層,以具有較 高的分解溫度或在雷射波長下具有比犧牲層底的吸收。因 為阻纟e層具有較向的分解溫度或是低吸收,故其將會被雷 射能量大大地影響。在此結構中,犧牲層被雷射分解,而 在具有較高的分解溫度或較低的吸收的阻絕層處留下一陡 變界面"接著’該阻絕層亦可以被蝕刻、氧化與蝕刻,或 是使用具有不同能量與波長之雷射而分解。 較佳的層組合是 GaN/ALGahN、InGaN/AlxGaUx:N、 及InGaN/GaN。在GaN/AlxGaUxN組合的情況下,(}aN犧牲 層將會因雷射而分解,但AlxGa!xN阻絕層將不受到影響。 AlxGaNxN接著可以運用選擇性濕式化學蝕刻來被蝕刻 掉’以在平滑的AKGayInzN界面上停止。另—方面,若上 述的GaN層未被完全地分解’留下的GaN可以被蝕刻掉。 因為厚的緩衝層需要在GaN生成的開始,且VCSEL層界面 木纸豉尺度適用宁國舀家標準(CNS.m規烙公餐〉 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 17 447183
經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(is) 主動區域結構被直接晶圓結合至Gap主基材上(參見第3C 圖)。在情形2中,DBR/AlxGayInzN主動區域結構經由一中 間CaF2層而被晶圓結合至一 Gap主基材上(第3C圖,在此 中間層未顯示)。在情形3中,D-DBR在一主基材(GaP)上 被沉積,並被直接晶圓結合至一 AlxGayInzN主動區域上(苐 4C圖)。對於情形1與3,經结合的面積比情形2小很多,因 為沒有使用中間層。第5圖顯示對於情形1結構之結合界面 的掃描式電子顯微鏡(SEM)橫載面影像。該界面平滑並且 在此倍率下未見到空隙。在情形4中,該DBR/AlxGayInzN 主動區域結構經由一層由CrAuNiCu合金所構成的金屬中 間層而被結合至一主基材上。第6圖顯示情形4的SEM橫截 面’藍寶石基材已經被移除’且一第二D-DBR在相對於 弟 D-DBR之AlxGayInzN主動區域的側邊上被沉積。對於 所有的元件,D-DBR積材為SiOVHfO2,並且藍寶石基材 使用雷射溶化技術被移除。第7圖顯示來自第6圖所述之元 件從4〇0-500nm的光學發射光譜。典型的高峰為一垂直空 腔結構之特徵。 元件標號對照表 12 主基材 14 第一鏡子積材 16 晶圓結合界面 18 AlxGayIn2N±動區域 18a η-型層 18b P-型層 20 第二鏡子積材 +氏&尸、度適用中國S家標準(CN.S).-\4現格公》〉 ---------------------訂--------I (請先閲讀背面之注意事項再填寫本頁) 19
Claims (1)
- 447183 A8 B8 C8 D8 經濟部智慧財產局員工消費合作杜印製六、申請專利範圍 第08S114962號專利申請案申請專利範圍修正本 修正曰期:90年5月 f彳%倏正/更正/補充 一種半導體發光元件,係包含 一基材; 一緊接著該基材而被設置之Α1χ(ϊ~ΙηζΝ結構 (叫’其係包括一卜型層、一p_型層' 及一主動層丨 一第一鏡子積材(14),其係被插置在該積材與該 AixGayInzN結構之一底部側之間; 一具有一結合溫度之晶圓結合界面(丨…,其係插 置在該第一鏡子積材與該基材與入丨山屮心队结構之其 中一者之間;以及 一 P與一 η接點(22a,22b),該p接點與卜型層電氣 地連接,該η接點與n-型層電氣地連接。 如申請專利範圍第丨項所述之元件,其係進一步包含: 至少一層尹間層,其係與該晶圓結合界面相鄰:以及 該中間結合層與該基材的其中一者被選擇以為順性。 如申請專利範圍第2項所述之元件,其中該Α1χ(3^ΙηζΝ 元件(18)為一垂直空腔光電子結構。 4. 如申請專利範圍第3項所述之元件,其中該从GwN 元件(18)在p-型層中進—步包括一電流聚集層。 5. 如申請專利範圍第2項所述之元件,其中該基材為順 性,並且被從一包括磷化鎵(GaP)、砷化磷(GaAs)、 磷化銦(InP)、或矽(Si)之群組作選擇a 6. 如申請專利範圍第2項所述之元件,其中該中間金屬 訂 2. 3. 本紙張尺度適用中國國家標準(CJSS)A4規格(210 χ 297公爱〉 •20 A8 B8 C8 D8 η年厂aw: 六、申請專利範圍 結合層為順性,並從一包括含有齒化物、ZnO、銦(ιη)、 錫、鉻(Cr)、金(Au)、鎳(Ni)、銅(Cu)及Π - VI材料之 合金與介電體的群組中作選擇。 7. 如申請專利範圍第2項所述之元件,其係進一步包含 一相鄰於該AlxGayInzr^#構之一頂部側而被設置之第 二鏡子積材(20)。 8. 如申請專利範圍第7項所述之元件,其中該等第一與 第二鏡子積材(14、20)之至少一者被從一個包括介電 分佈布雷格反射器與複合分佈布雷格反射器之群組中 選出。 9. 如申請專利範圍第丨項所述之元件,其係進一步包含 一相鄰於該構而被設置之第二鏡子積材 (20)。 10. 如申請專利範圍第9項所述之元件,其中該等第一與 第二鏡子積材(14、20)之至少一者被從一個包括介電 分佈布雷格反射器與複合分佈布雷格反射器之群組中 選出。 11. 如申請專利範圍第1項所述之元件,其中該AlxGayInzN 元件(1 8)在該p,型層内係進一步包括一電流聚集層。 12. 如申請專利範圍第1項所述之元件,其中該基材為順 性’並選自一個包括磷化鎵(GaP) '砷化磷(GaAs)、 璃化銦(InP)、或矽(Si)之群組。 13. 如申請專利範圍第1項所述之元件,其中該Al、GayIi^N 元件為一垂直空腔光電子結構。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮) --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 21 447183 0g8892 ^Bcs A ί(( Γ ο 〇Ί " 六、申請專利範圍 14'種用以製造A1*GayInzN結構之方法,其包含下列步 驟: 將一主基材附著至一第一鏡子積材上; 在一犧牲生長基材上製造一 AlxGayinzN結構; 產生晶圓結合界面; 移除該犧牲生長基材;以及 在該AlxGayInzN基材上沉積電氣接點。 I5·如申凊專利範圍第M項所述之用以製造結 構之方法’其中該用以移除該犧牲生長積材之步驟包 含雷射熔化步驟。 16.如申M專利範圍第14項所述之用以製造人丨/^匕^結 構之方法,其係進一步包含於該晶圓結合界面處附著 一中間結合層之步騾。 17·如巾請專利範圍第16項所述之用以製制问#輯 構之方法,其中該主基材與該中間結合層之其中一者 被選擇而呈順性。 1如申請專利範圍第Μ項所述之用以製造从叫心結 構之方法,其係進-步包含在該从叫❻結構之頂 部上附著一第二鏡子積材之步驟。 19·—種用以製造AlxGayInzN結構之方法,其係包含下列 步驟: 將-AIxGayInzN結構製造至—犧牲生長基材上; 在一 AlxGayInzN結構之頂部上附著—第一鏡子積 材, (請先閱讀背面之注意事項再填寫本頁:> -I 裝- ----— II 訂----In — 經濟部智慧財產局員工消費合作社印製 22 A8B8C8D8 六、申請專利範圍 :主基材晶圓結合至該第一鏡子積材上,以產 生—晶圓結合界面; 移除該犧牲生長基材;以及 在邊AlxGayInzT^#構上沉積電氣接點。 士申μ專利範圍第19項所述之用以製造八丨力〜匕力結 構之方去’其中該用以移除該犧牲生長積材之步驟包 含雷射溶化步驟。 21 ’如申請專利範圍第i 9項所述之用以製造从〜AN結 構之方法,其係進一步包含於該晶圓結合界面處附著 —中間結合層之步驟。 22‘如申請專利範圍心項所述之用以Μα叫^結 構之方法,其中該主基材與該中間結合層之其中—者 被選擇而順性3 23.如申請專利範圍第丨9項 負所迷之用以製造AlxGayinzN結 構之方法’其係進一步包含在該八⑽㈣結構之頂 部上附著-第二鏡子積持之步驟。 11 1裝 if—----訂 — I---I 線 f靖先閱蹟背面之注項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格---- -23
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1999
- 1999-02-05 US US09/245,435 patent/US6320206B1/en not_active Expired - Lifetime
- 1999-08-31 TW TW088114962A patent/TW447183B/zh not_active IP Right Cessation
- 1999-11-08 DE DE19953588A patent/DE19953588C2/de not_active Expired - Lifetime
- 1999-12-16 CN CN99126434A patent/CN1267109A/zh active Pending
-
2000
- 2000-02-02 JP JP2000025788A patent/JP4834210B2/ja not_active Expired - Lifetime
- 2000-02-03 KR KR1020000005424A patent/KR100641925B1/ko active IP Right Grant
- 2000-02-07 GB GB0002759A patent/GB2346480A/en not_active Withdrawn
-
2001
- 2001-08-06 US US09/923,711 patent/US6420199B1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI414021B (zh) * | 2009-12-07 | 2013-11-01 | Soitec Silicon On Insulator | 具有氮化銦鎵層之半導體裝置 |
Also Published As
Publication number | Publication date |
---|---|
DE19953588C2 (de) | 2003-08-14 |
US6420199B1 (en) | 2002-07-16 |
US20020030198A1 (en) | 2002-03-14 |
DE19953588A1 (de) | 2000-08-17 |
GB0002759D0 (en) | 2000-03-29 |
CN1267109A (zh) | 2000-09-20 |
US6320206B1 (en) | 2001-11-20 |
KR100641925B1 (ko) | 2006-11-02 |
JP2000228563A (ja) | 2000-08-15 |
KR20000076604A (ko) | 2000-12-26 |
GB2346480A (en) | 2000-08-09 |
JP4834210B2 (ja) | 2011-12-14 |
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