DE112005001596T5 - Verfahren zum Verbinden von Scheiben aus (Al, In, Ga)N und Zn(S, Se)für optoelektronische Anwendungen - Google Patents
Verfahren zum Verbinden von Scheiben aus (Al, In, Ga)N und Zn(S, Se)für optoelektronische Anwendungen Download PDFInfo
- Publication number
- DE112005001596T5 DE112005001596T5 DE112005001596T DE112005001596T DE112005001596T5 DE 112005001596 T5 DE112005001596 T5 DE 112005001596T5 DE 112005001596 T DE112005001596 T DE 112005001596T DE 112005001596 T DE112005001596 T DE 112005001596T DE 112005001596 T5 DE112005001596 T5 DE 112005001596T5
- Authority
- DE
- Germany
- Prior art keywords
- optoelectronic applications
- joining disks
- disks
- joining
- optoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229910052782 aluminium Inorganic materials 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 229910052738 indium Inorganic materials 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
- 229910052725 zinc Inorganic materials 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58567304P | 2004-07-06 | 2004-07-06 | |
PCT/US2005/023802 WO2006014421A2 (en) | 2004-07-06 | 2005-07-06 | METHOD FOR WAFER BONDING (Al, In, Ga)N AND Zn(S, Se) FOR OPTOELECTRONIC APPLICATIONS |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112005001596T5 true DE112005001596T5 (de) | 2007-05-16 |
Family
ID=35787595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112005001596T Ceased DE112005001596T5 (de) | 2004-07-06 | 2005-07-06 | Verfahren zum Verbinden von Scheiben aus (Al, In, Ga)N und Zn(S, Se)für optoelektronische Anwendungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US7344958B2 (de) |
JP (1) | JP5303696B2 (de) |
KR (1) | KR101244754B1 (de) |
DE (1) | DE112005001596T5 (de) |
WO (1) | WO2006014421A2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7781789B2 (en) * | 2006-11-15 | 2010-08-24 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
US7768024B2 (en) * | 2005-12-02 | 2010-08-03 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth |
US7345298B2 (en) * | 2005-02-28 | 2008-03-18 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate |
WO2007056354A2 (en) * | 2005-11-04 | 2007-05-18 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (led) |
TW200837997A (en) * | 2006-11-15 | 2008-09-16 | Univ California | High light extraction efficiency sphere LED |
US20090121250A1 (en) * | 2006-11-15 | 2009-05-14 | Denbaars Steven P | High light extraction efficiency light emitting diode (led) using glass packaging |
EP2843716A3 (de) | 2006-11-15 | 2015-04-29 | The Regents of The University of California | Leuchtdiode mit strukturierter Phosphorumwandlungsschicht |
TWI492411B (zh) * | 2006-12-11 | 2015-07-11 | Univ California | 非極性與半極性發光裝置 |
TW201448263A (zh) | 2006-12-11 | 2014-12-16 | Univ California | 透明發光二極體 |
JP2010512661A (ja) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高特性無極性iii族窒化物光デバイスの有機金属化学気相成長法(mocvd)による成長 |
JP5057398B2 (ja) | 2008-08-05 | 2012-10-24 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
WO2010042871A1 (en) * | 2008-10-09 | 2010-04-15 | The Regents Of The University Of California | Photoelectrochemical etching for chip shaping of light emitting diodes |
CN108831974B (zh) * | 2018-04-27 | 2020-04-07 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制造方法 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3607463A (en) * | 1968-08-02 | 1971-09-21 | Varian Associates | Method for growing tin-doped n-type epitaxial gallium arsenide from the liquid state |
JPH07254732A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体発光装置 |
JPH08222786A (ja) * | 1995-02-15 | 1996-08-30 | Matsushita Electric Ind Co Ltd | 電子線励起レーザ、電子線励起レーザの製造方法および電子線励起レーザの駆動方法 |
US5932048A (en) * | 1995-04-06 | 1999-08-03 | Komatsu Electronic Metals Co., Ltd. | Method of fabricating direct-bonded semiconductor wafers |
JPH10154850A (ja) * | 1996-09-30 | 1998-06-09 | Matsushita Electric Ind Co Ltd | 垂直共振器型半導体発光素子、発光装置、光ディスク装置、記録装置、及びエッチング方法 |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
JP5017621B2 (ja) * | 2000-08-03 | 2012-09-05 | 並木精密宝石株式会社 | サファイヤ基板とその製造方法 |
US6998281B2 (en) * | 2000-10-12 | 2006-02-14 | General Electric Company | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics |
US7119271B2 (en) | 2001-10-12 | 2006-10-10 | The Boeing Company | Wide-bandgap, lattice-mismatched window layer for a solar conversion device |
JP2003327497A (ja) * | 2002-05-13 | 2003-11-19 | Sumitomo Electric Ind Ltd | GaN単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法 |
JP3886859B2 (ja) * | 2002-07-30 | 2007-02-28 | 独立行政法人科学技術振興機構 | 鉄Siからなる基板上への単結晶薄膜生成方法及びその単結晶薄膜装置 |
US20050189551A1 (en) * | 2004-02-26 | 2005-09-01 | Hui Peng | High power and high brightness white LED assemblies and method for mass production of the same |
-
2005
- 2005-07-06 US US11/175,761 patent/US7344958B2/en not_active Expired - Fee Related
- 2005-07-06 DE DE112005001596T patent/DE112005001596T5/de not_active Ceased
- 2005-07-06 KR KR1020077002863A patent/KR101244754B1/ko not_active IP Right Cessation
- 2005-07-06 JP JP2007520436A patent/JP5303696B2/ja not_active Expired - Fee Related
- 2005-07-06 WO PCT/US2005/023802 patent/WO2006014421A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US7344958B2 (en) | 2008-03-18 |
JP2008506259A (ja) | 2008-02-28 |
KR101244754B1 (ko) | 2013-03-18 |
WO2006014421A3 (en) | 2007-06-14 |
JP5303696B2 (ja) | 2013-10-02 |
KR20070064424A (ko) | 2007-06-20 |
WO2006014421A2 (en) | 2006-02-09 |
US20060009006A1 (en) | 2006-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8181 | Inventor (new situation) |
Inventor name: MURAI, AKIHIKO, GOLETA, CALIF., US Inventor name: MCCARTY, LEE, SANTA BARBARA, CALIF., US Inventor name: MISHRA, UMESH K., MONTECITO, CALIF., US Inventor name: DENBAARS, STEVEN P., GOLETA, CALIF., US Inventor name: KRUSE, CARSTEN, 28209 BREMEN, DE Inventor name: FIGGE, STEPHAN, 28217 BREMEN, DE Inventor name: HOMMEL, DETLEF, 28309 BREMEN, DE |
|
8181 | Inventor (new situation) |
Inventor name: MURAI, AKIHIKO, GOLETA, CALIF., US Inventor name: MCCARTHY, LEE, SANTA BARBARA, CALIF., US Inventor name: MISHRA, UMESH K., MONTECITO, CALIF., US Inventor name: DENBAARS, STEVEN P., GOLETA, CALIF., US Inventor name: KRUSE, CARSTEN, 28209 BREMEN, DE Inventor name: FIGGE, STEPHAN, 28217 BREMEN, DE Inventor name: HOMMEL, DETLEF, 28309 BREMEN, DE |
|
R012 | Request for examination validly filed |
Effective date: 20120614 |
|
R016 | Response to examination communication | ||
R002 | Refusal decision in examination/registration proceedings | ||
R003 | Refusal decision now final |
Effective date: 20140104 |