DE112005001596T5 - Verfahren zum Verbinden von Scheiben aus (Al, In, Ga)N und Zn(S, Se)für optoelektronische Anwendungen - Google Patents

Verfahren zum Verbinden von Scheiben aus (Al, In, Ga)N und Zn(S, Se)für optoelektronische Anwendungen Download PDF

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Publication number
DE112005001596T5
DE112005001596T5 DE112005001596T DE112005001596T DE112005001596T5 DE 112005001596 T5 DE112005001596 T5 DE 112005001596T5 DE 112005001596 T DE112005001596 T DE 112005001596T DE 112005001596 T DE112005001596 T DE 112005001596T DE 112005001596 T5 DE112005001596 T5 DE 112005001596T5
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DE
Germany
Prior art keywords
optoelectronic applications
joining disks
disks
joining
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112005001596T
Other languages
English (en)
Inventor
Ahihiko Murai
Lee Mccarty
Umesh K Mishra
Steven P Denbaars
Carsten Kruse
Stephan Figge
Detlef Hommel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universitaet Bremen
Japan Science and Technology Agency
University of California
Original Assignee
Universitaet Bremen
Japan Science and Technology Agency
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitaet Bremen, Japan Science and Technology Agency, University of California filed Critical Universitaet Bremen
Publication of DE112005001596T5 publication Critical patent/DE112005001596T5/de
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/0242Crystalline insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02557Sulfides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/0256Selenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • H01L21/187Joining of semiconductor bodies for junction formation by direct bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE112005001596T 2004-07-06 2005-07-06 Verfahren zum Verbinden von Scheiben aus (Al, In, Ga)N und Zn(S, Se)für optoelektronische Anwendungen Ceased DE112005001596T5 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58567304P 2004-07-06 2004-07-06
PCT/US2005/023802 WO2006014421A2 (en) 2004-07-06 2005-07-06 METHOD FOR WAFER BONDING (Al, In, Ga)N AND Zn(S, Se) FOR OPTOELECTRONIC APPLICATIONS

Publications (1)

Publication Number Publication Date
DE112005001596T5 true DE112005001596T5 (de) 2007-05-16

Family

ID=35787595

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112005001596T Ceased DE112005001596T5 (de) 2004-07-06 2005-07-06 Verfahren zum Verbinden von Scheiben aus (Al, In, Ga)N und Zn(S, Se)für optoelektronische Anwendungen

Country Status (5)

Country Link
US (1) US7344958B2 (de)
JP (1) JP5303696B2 (de)
KR (1) KR101244754B1 (de)
DE (1) DE112005001596T5 (de)
WO (1) WO2006014421A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
US7768024B2 (en) * 2005-12-02 2010-08-03 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
US7345298B2 (en) * 2005-02-28 2008-03-18 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
WO2007056354A2 (en) * 2005-11-04 2007-05-18 The Regents Of The University Of California High light extraction efficiency light emitting diode (led)
TW200837997A (en) * 2006-11-15 2008-09-16 Univ California High light extraction efficiency sphere LED
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
EP2843716A3 (de) 2006-11-15 2015-04-29 The Regents of The University of California Leuchtdiode mit strukturierter Phosphorumwandlungsschicht
TWI492411B (zh) * 2006-12-11 2015-07-11 Univ California 非極性與半極性發光裝置
TW201448263A (zh) 2006-12-11 2014-12-16 Univ California 透明發光二極體
JP2010512661A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高特性無極性iii族窒化物光デバイスの有機金属化学気相成長法(mocvd)による成長
JP5057398B2 (ja) 2008-08-05 2012-10-24 シャープ株式会社 窒化物半導体発光素子およびその製造方法
WO2010042871A1 (en) * 2008-10-09 2010-04-15 The Regents Of The University Of California Photoelectrochemical etching for chip shaping of light emitting diodes
CN108831974B (zh) * 2018-04-27 2020-04-07 华灿光电(苏州)有限公司 一种发光二极管外延片及其制造方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607463A (en) * 1968-08-02 1971-09-21 Varian Associates Method for growing tin-doped n-type epitaxial gallium arsenide from the liquid state
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
JPH08222786A (ja) * 1995-02-15 1996-08-30 Matsushita Electric Ind Co Ltd 電子線励起レーザ、電子線励起レーザの製造方法および電子線励起レーザの駆動方法
US5932048A (en) * 1995-04-06 1999-08-03 Komatsu Electronic Metals Co., Ltd. Method of fabricating direct-bonded semiconductor wafers
JPH10154850A (ja) * 1996-09-30 1998-06-09 Matsushita Electric Ind Co Ltd 垂直共振器型半導体発光素子、発光装置、光ディスク装置、記録装置、及びエッチング方法
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
JP5017621B2 (ja) * 2000-08-03 2012-09-05 並木精密宝石株式会社 サファイヤ基板とその製造方法
US6998281B2 (en) * 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
US7119271B2 (en) 2001-10-12 2006-10-10 The Boeing Company Wide-bandgap, lattice-mismatched window layer for a solar conversion device
JP2003327497A (ja) * 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd GaN単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法
JP3886859B2 (ja) * 2002-07-30 2007-02-28 独立行政法人科学技術振興機構 鉄Siからなる基板上への単結晶薄膜生成方法及びその単結晶薄膜装置
US20050189551A1 (en) * 2004-02-26 2005-09-01 Hui Peng High power and high brightness white LED assemblies and method for mass production of the same

Also Published As

Publication number Publication date
US7344958B2 (en) 2008-03-18
JP2008506259A (ja) 2008-02-28
KR101244754B1 (ko) 2013-03-18
WO2006014421A3 (en) 2007-06-14
JP5303696B2 (ja) 2013-10-02
KR20070064424A (ko) 2007-06-20
WO2006014421A2 (en) 2006-02-09
US20060009006A1 (en) 2006-01-12

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Legal Events

Date Code Title Description
8181 Inventor (new situation)

Inventor name: MURAI, AKIHIKO, GOLETA, CALIF., US

Inventor name: MCCARTY, LEE, SANTA BARBARA, CALIF., US

Inventor name: MISHRA, UMESH K., MONTECITO, CALIF., US

Inventor name: DENBAARS, STEVEN P., GOLETA, CALIF., US

Inventor name: KRUSE, CARSTEN, 28209 BREMEN, DE

Inventor name: FIGGE, STEPHAN, 28217 BREMEN, DE

Inventor name: HOMMEL, DETLEF, 28309 BREMEN, DE

8181 Inventor (new situation)

Inventor name: MURAI, AKIHIKO, GOLETA, CALIF., US

Inventor name: MCCARTHY, LEE, SANTA BARBARA, CALIF., US

Inventor name: MISHRA, UMESH K., MONTECITO, CALIF., US

Inventor name: DENBAARS, STEVEN P., GOLETA, CALIF., US

Inventor name: KRUSE, CARSTEN, 28209 BREMEN, DE

Inventor name: FIGGE, STEPHAN, 28217 BREMEN, DE

Inventor name: HOMMEL, DETLEF, 28309 BREMEN, DE

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Effective date: 20120614

R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final

Effective date: 20140104