TW445304B - System and method for reducing particles in epitaxial reactors - Google Patents
System and method for reducing particles in epitaxial reactors Download PDFInfo
- Publication number
- TW445304B TW445304B TW088111373A TW88111373A TW445304B TW 445304 B TW445304 B TW 445304B TW 088111373 A TW088111373 A TW 088111373A TW 88111373 A TW88111373 A TW 88111373A TW 445304 B TW445304 B TW 445304B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- chamber
- wafer transfer
- transfer chamber
- wafer
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 49
- 235000012431 wafers Nutrition 0.000 claims abstract description 217
- 239000004065 semiconductor Substances 0.000 claims abstract description 87
- 238000002955 isolation Methods 0.000 claims abstract description 57
- 230000001105 regulatory effect Effects 0.000 claims abstract description 5
- 238000011068 loading method Methods 0.000 claims description 47
- 230000007246 mechanism Effects 0.000 claims description 37
- 238000011049 filling Methods 0.000 claims description 22
- 230000002079 cooperative effect Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000001276 controlling effect Effects 0.000 claims 8
- 238000010494 dissociation reaction Methods 0.000 claims 4
- 230000005593 dissociations Effects 0.000 claims 4
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 2
- 238000013016 damping Methods 0.000 claims 2
- 230000032258 transport Effects 0.000 claims 2
- 229910052778 Plutonium Inorganic materials 0.000 claims 1
- 230000037427 ion transport Effects 0.000 claims 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims 1
- 238000010926 purge Methods 0.000 abstract description 28
- 230000003068 static effect Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 69
- 238000004519 manufacturing process Methods 0.000 description 23
- 230000007547 defect Effects 0.000 description 17
- 239000000758 substrate Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000746 purification Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000012636 effector Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- -1 steam Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/113,934 US6161311A (en) | 1998-07-10 | 1998-07-10 | System and method for reducing particles in epitaxial reactors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW445304B true TW445304B (en) | 2001-07-11 |
Family
ID=22352390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088111373A TW445304B (en) | 1998-07-10 | 1999-07-08 | System and method for reducing particles in epitaxial reactors |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6161311A (enExample) |
| EP (2) | EP1956112A3 (enExample) |
| JP (1) | JP2002520832A (enExample) |
| KR (1) | KR20010071820A (enExample) |
| DE (1) | DE69940064D1 (enExample) |
| TW (1) | TW445304B (enExample) |
| WO (1) | WO2000003056A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153044A (en) * | 1998-04-30 | 2000-11-28 | Euv Llc | Protection of lithographic components from particle contamination |
| TW513617B (en) * | 1999-04-21 | 2002-12-11 | Asml Corp | Lithographic projection apparatus and method of manufacturing a device using a lithographic projection apparatus |
| TW472296B (en) * | 1999-05-25 | 2002-01-11 | Ebara Corp | Substrate treating apparatus and method of operating the same |
| US6279249B1 (en) | 1999-12-30 | 2001-08-28 | Intel Corporation | Reduced particle contamination manufacturing and packaging for reticles |
| JP3955724B2 (ja) * | 2000-10-12 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP4916070B2 (ja) * | 2001-09-26 | 2012-04-11 | アプライド マテリアルズ インコーポレイテッド | 基板処理装置 |
| JP2003109994A (ja) * | 2001-09-26 | 2003-04-11 | Applied Materials Inc | 基板処理装置 |
| DE10203833B4 (de) * | 2002-01-31 | 2007-02-08 | Siltronic Ag | Verfahren und Vorrichtung zur Differenzdruckregelung an Epitaxiereaktoren |
| JP4531557B2 (ja) * | 2002-05-21 | 2010-08-25 | エーエスエム アメリカ インコーポレイテッド | 半導体処理ツール内チャンバ間の相互汚染の減少 |
| DE10247051A1 (de) * | 2002-10-09 | 2004-04-22 | Polymer Latex Gmbh & Co Kg | Latex und Verfahren zu seiner Herstellung |
| US7100954B2 (en) * | 2003-07-11 | 2006-09-05 | Nexx Systems, Inc. | Ultra-thin wafer handling system |
| KR101089394B1 (ko) * | 2003-09-11 | 2011-12-07 | 파나소닉 주식회사 | 시각 처리 장치, 시각 처리 방법, 시각 처리 프로그램 및 반도체 장치 |
| US8608422B2 (en) * | 2003-10-08 | 2013-12-17 | Tokyo Electron Limited | Particle sticking prevention apparatus and plasma processing apparatus |
| DE10358275A1 (de) * | 2003-12-11 | 2005-07-21 | Wiessner Gmbh | Vorrichtung und Verfahren zum Reinigen wenigstens einer Prozesskammer zum Beschichten wenigstens eines Substrats |
| US7416370B2 (en) * | 2005-06-15 | 2008-08-26 | Lam Research Corporation | Method and apparatus for transporting a substrate using non-Newtonian fluid |
| US20060174835A1 (en) * | 2005-02-10 | 2006-08-10 | Misako Saito | Vacuum processing apparatus and method of using the same |
| KR100745966B1 (ko) * | 2005-12-29 | 2007-08-02 | 동부일렉트로닉스 주식회사 | 플라즈마 처리장치 및 이의 세정 방법 |
| US20080067368A1 (en) * | 2006-04-19 | 2008-03-20 | Mks Instruments Inc | Ionizing system for vacuum process and metrology equipment |
| KR100774711B1 (ko) * | 2006-07-19 | 2007-11-08 | 동부일렉트로닉스 주식회사 | 반도체 제조용 에피택셜 장비의 파티클 제거 장치 및 제거방법 |
| US7972961B2 (en) * | 2008-10-09 | 2011-07-05 | Asm Japan K.K. | Purge step-controlled sequence of processing semiconductor wafers |
| US20100119351A1 (en) * | 2008-11-13 | 2010-05-13 | Wafertech, Llc | Method and system for venting load lock chamber to a desired pressure |
| US8216380B2 (en) * | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
| US8287648B2 (en) * | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
| JP5719546B2 (ja) * | 2009-09-08 | 2015-05-20 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
| JP5639816B2 (ja) * | 2009-09-08 | 2014-12-10 | 東京応化工業株式会社 | 塗布方法及び塗布装置 |
| JP5469966B2 (ja) * | 2009-09-08 | 2014-04-16 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
| JP5439097B2 (ja) * | 2009-09-08 | 2014-03-12 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
| US8416552B2 (en) * | 2009-10-23 | 2013-04-09 | Illinois Tool Works Inc. | Self-balancing ionized gas streams |
| KR20130139844A (ko) * | 2010-07-02 | 2013-12-23 | 매티슨 트라이-개스, 인크. | Si-함유 재료 및 치환적으로 도핑된 결정성 si-함유 재료의 선택적 에피택시 |
| US9031700B2 (en) | 2011-10-11 | 2015-05-12 | Intermolecular, Inc. | Facilities manifold with proximity sensor |
| US9082608B2 (en) | 2012-12-03 | 2015-07-14 | Intermolecular, Inc. | Pneumatic clamping mechanism for cells with adjustable height |
| US9269567B2 (en) | 2013-12-17 | 2016-02-23 | Intermolecular, Inc. | High productivity combinatorial processing using pressure-controlled one-way valves |
| JP2018532890A (ja) * | 2015-10-25 | 2018-11-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 基板上での真空堆積のための装置及び真空堆積中に基板をマスキングするための方法 |
| CN106876299B (zh) * | 2015-12-11 | 2019-08-23 | 北京北方华创微电子装备有限公司 | 半导体加工设备 |
| CN107761165A (zh) * | 2016-08-15 | 2018-03-06 | 上海新昇半导体科技有限公司 | 一种基于伯努利效应的底座及外延设备 |
| US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
| US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
| WO2021257773A1 (en) * | 2020-06-17 | 2021-12-23 | Applied Materials, Inc. | High temperature chemical vapor deposition lid |
| US11864299B2 (en) | 2022-05-10 | 2024-01-02 | Applied Materials, Inc. | System and method for dissipating workpiece charge build up |
| US12460863B2 (en) * | 2022-05-26 | 2025-11-04 | Semes Co., Ltd. | Apparatus for treating a substrate |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59222922A (ja) * | 1983-06-01 | 1984-12-14 | Nippon Telegr & Teleph Corp <Ntt> | 気相成長装置 |
| US5373806A (en) * | 1985-05-20 | 1994-12-20 | Applied Materials, Inc. | Particulate-free epitaxial process |
| JPS61272918A (ja) | 1985-05-29 | 1986-12-03 | Hitachi Electronics Eng Co Ltd | ガス流分布を改良したｃｖｄ装置 |
| US4747367A (en) * | 1986-06-12 | 1988-05-31 | Crystal Specialties, Inc. | Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition |
| US5080549A (en) * | 1987-05-11 | 1992-01-14 | Epsilon Technology, Inc. | Wafer handling system with Bernoulli pick-up |
| US4828224A (en) * | 1987-10-15 | 1989-05-09 | Epsilon Technology, Inc. | Chemical vapor deposition system |
| US5092728A (en) * | 1987-10-15 | 1992-03-03 | Epsilon Technology, Inc. | Substrate loading apparatus for a CVD process |
| US5020475A (en) * | 1987-10-15 | 1991-06-04 | Epsilon Technology, Inc. | Substrate handling and transporting apparatus |
| US4793283A (en) * | 1987-12-10 | 1988-12-27 | Sarkozy Robert F | Apparatus for chemical vapor deposition with clean effluent and improved product yield |
| US5683072A (en) * | 1988-11-01 | 1997-11-04 | Tadahiro Ohmi | Thin film forming equipment |
| US4976610A (en) * | 1988-12-05 | 1990-12-11 | Cryco Twenty-Two, Inc. | Purge cantilevered wafer loading system for LP CVD processes |
| US5207835A (en) * | 1989-02-28 | 1993-05-04 | Moore Epitaxial, Inc. | High capacity epitaxial reactor |
| US5094885A (en) * | 1990-10-12 | 1992-03-10 | Genus, Inc. | Differential pressure cvd chuck |
| US5212116A (en) * | 1990-06-18 | 1993-05-18 | At&T Bell Laboratories | Method for forming planarized films by preferential etching of the center of a wafer |
| US5200232A (en) * | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
| JPH04297025A (ja) * | 1991-01-10 | 1992-10-21 | Nec Corp | 半導体製造装置 |
| US5228208A (en) * | 1991-06-17 | 1993-07-20 | Applied Materials, Inc. | Method of and apparatus for controlling thermal gradient in a load lock chamber |
| JPH05218176A (ja) * | 1992-02-07 | 1993-08-27 | Tokyo Electron Tohoku Kk | 熱処理方法及び被処理体の移載方法 |
| US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
| JPH0629367A (ja) * | 1992-07-07 | 1994-02-04 | Nec Yamagata Ltd | 真空装置のバルブ制御方法 |
| JP2825172B2 (ja) * | 1992-07-10 | 1998-11-18 | 東京エレクトロン株式会社 | 減圧処理装置および減圧処理方法 |
| US5316794A (en) * | 1992-12-11 | 1994-05-31 | Applied Materials, Inc. | Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure |
| DE59406900D1 (de) * | 1993-02-08 | 1998-10-22 | Sez Semiconduct Equip Zubehoer | Träger für scheibenförmige Gegenstände |
| US5363872A (en) * | 1993-03-16 | 1994-11-15 | Applied Materials, Inc. | Low particulate slit valve system and method for controlling same |
| JP2852843B2 (ja) * | 1993-04-02 | 1999-02-03 | 株式会社ベンカン | スローベントバルブ |
| KR100327716B1 (ko) * | 1994-01-11 | 2002-06-27 | 노만 에이취. 폰드 | 진공처리시스템및진공처리시스템내에서의기판조작방법 |
| US5614247A (en) * | 1994-09-30 | 1997-03-25 | International Business Machines Corporation | Apparatus for chemical vapor deposition of aluminum oxide |
| DE69520687T2 (de) * | 1994-11-09 | 2001-08-23 | R.R. Street & Co., Inc. | Verfahren und system zur aufbereitung von unter druck stehenden flüssigen lösungsmitteln zur reinigung von substraten |
| JP3553204B2 (ja) * | 1995-04-28 | 2004-08-11 | アネルバ株式会社 | Ｃｖｄ装置 |
| US5997588A (en) * | 1995-10-13 | 1999-12-07 | Advanced Semiconductor Materials America, Inc. | Semiconductor processing system with gas curtain |
| KR100189981B1 (ko) * | 1995-11-21 | 1999-06-01 | 윤종용 | 진공 시스템을 구비한 반도체 소자 제조장치 |
| US5793050A (en) * | 1996-02-16 | 1998-08-11 | Eaton Corporation | Ion implantation system for implanting workpieces |
| US5787925A (en) | 1996-07-15 | 1998-08-04 | Veriflo Corporation | Pneumatically servoed gas pressure regulator |
| US5871813A (en) * | 1997-03-05 | 1999-02-16 | Applied Materials, Inc. | Apparatus and method for controlling process chamber pressure |
| US6067728A (en) * | 1998-02-13 | 2000-05-30 | G.T. Equipment Technologies, Inc. | Supercritical phase wafer drying/cleaning system |
| US6086678A (en) * | 1999-03-04 | 2000-07-11 | Memc Electronic Materials, Inc. | Pressure equalization system for chemical vapor deposition reactors |
-
1998
- 1998-07-10 US US09/113,934 patent/US6161311A/en not_active Expired - Lifetime
-
1999
- 1999-06-30 JP JP2000559270A patent/JP2002520832A/ja active Pending
- 1999-06-30 EP EP08006163A patent/EP1956112A3/en not_active Withdrawn
- 1999-06-30 KR KR1020017000387A patent/KR20010071820A/ko not_active Abandoned
- 1999-06-30 WO PCT/US1999/015070 patent/WO2000003056A1/en not_active Ceased
- 1999-06-30 DE DE69940064T patent/DE69940064D1/de not_active Expired - Fee Related
- 1999-06-30 EP EP99932209A patent/EP1097251B1/en not_active Expired - Lifetime
- 1999-07-08 TW TW088111373A patent/TW445304B/zh not_active IP Right Cessation
-
2000
- 2000-12-01 US US09/727,736 patent/US6550158B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002520832A (ja) | 2002-07-09 |
| WO2000003056A1 (en) | 2000-01-20 |
| EP1097251A1 (en) | 2001-05-09 |
| EP1956112A3 (en) | 2008-10-22 |
| EP1097251B1 (en) | 2008-12-10 |
| EP1097251A4 (en) | 2005-01-12 |
| US20010000759A1 (en) | 2001-05-03 |
| KR20010071820A (ko) | 2001-07-31 |
| US6161311A (en) | 2000-12-19 |
| DE69940064D1 (de) | 2009-01-22 |
| US6550158B2 (en) | 2003-04-22 |
| EP1956112A2 (en) | 2008-08-13 |
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