TW442709B - Metal ion reduction in photoresist compositions by chelating ion exchange resin - Google Patents
Metal ion reduction in photoresist compositions by chelating ion exchange resin Download PDFInfo
- Publication number
- TW442709B TW442709B TW085113578A TW85113578A TW442709B TW 442709 B TW442709 B TW 442709B TW 085113578 A TW085113578 A TW 085113578A TW 85113578 A TW85113578 A TW 85113578A TW 442709 B TW442709 B TW 442709B
- Authority
- TW
- Taiwan
- Prior art keywords
- exchange resin
- ion exchange
- sodium
- photoresist
- deionized water
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 109
- 239000000203 mixture Substances 0.000 title claims abstract description 72
- 239000003456 ion exchange resin Substances 0.000 title claims abstract description 68
- 229920003303 ion-exchange polymer Polymers 0.000 title claims abstract description 68
- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 18
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 title claims description 64
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000002253 acid Chemical group 0.000 claims abstract description 24
- 150000003863 ammonium salts Chemical group 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 71
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 46
- 239000008367 deionised water Substances 0.000 claims description 44
- 229910021641 deionized water Inorganic materials 0.000 claims description 44
- -1 iron ion Chemical class 0.000 claims description 40
- 229910052742 iron Inorganic materials 0.000 claims description 39
- 239000002904 solvent Substances 0.000 claims description 39
- 229920005989 resin Polymers 0.000 claims description 37
- 239000011347 resin Substances 0.000 claims description 37
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 36
- 239000011734 sodium Substances 0.000 claims description 35
- 229910052708 sodium Inorganic materials 0.000 claims description 34
- 238000000576 coating method Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 22
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 150000007522 mineralic acids Chemical class 0.000 claims description 12
- 150000002466 imines Chemical class 0.000 claims description 11
- 238000011049 filling Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 10
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 10
- 229940116333 ethyl lactate Drugs 0.000 claims description 9
- 229920003986 novolac Polymers 0.000 claims description 9
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 8
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 239000000975 dye Substances 0.000 claims description 5
- 239000003623 enhancer Substances 0.000 claims description 5
- 125000000524 functional group Chemical group 0.000 claims description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical group COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 229920001429 chelating resin Polymers 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000002318 adhesion promoter Substances 0.000 claims description 3
- 235000009508 confectionery Nutrition 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- QGUPBYVADAJUNT-UHFFFAOYSA-N 6-morpholin-4-ium-4-yl-4,4-diphenylheptan-3-one;chloride Chemical compound Cl.C=1C=CC=CC=1C(C=1C=CC=CC=1)(C(=O)CC)CC(C)N1CCOCC1 QGUPBYVADAJUNT-UHFFFAOYSA-N 0.000 claims description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- WWKGVZASJYXZKN-UHFFFAOYSA-N Methyl violet 2B Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC(N)=CC=1)=C1C=CC(=[N+](C)C)C=C1 WWKGVZASJYXZKN-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000003086 colorant Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 2
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 239000002736 nonionic surfactant Substances 0.000 claims description 2
- 235000015170 shellfish Nutrition 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 241000345998 Calamus manan Species 0.000 claims 2
- 235000012950 rattan cane Nutrition 0.000 claims 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 1
- OVCAFYQPRDRRCX-UHFFFAOYSA-N 3-ethoxypropanoic acid ethyl acetate Chemical compound C(C)(=O)OCC.C(C)OCCC(=O)O OVCAFYQPRDRRCX-UHFFFAOYSA-N 0.000 claims 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 claims 1
- JABXMSSGPHGCII-UHFFFAOYSA-N acetic acid;propane-1,2-diol Chemical compound CC(O)=O.CC(O)CO JABXMSSGPHGCII-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- DDLNJUKFVPHVHA-UHFFFAOYSA-N ethyl acetate;2-hydroxypropanoic acid Chemical compound CCOC(C)=O.CC(O)C(O)=O DDLNJUKFVPHVHA-UHFFFAOYSA-N 0.000 claims 1
- CZRKJHRIILZWRC-UHFFFAOYSA-N methyl acetate;propane-1,2-diol Chemical group COC(C)=O.CC(O)CO CZRKJHRIILZWRC-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000007935 neutral effect Effects 0.000 abstract description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 230000005855 radiation Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 238000011161 development Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000012508 resin bead Substances 0.000 description 8
- 239000011247 coating layer Substances 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910001415 sodium ion Inorganic materials 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- GLDUZMNCEGHSBP-UHFFFAOYSA-N 2-(2-octylphenoxy)ethanol Chemical compound CCCCCCCCC1=CC=CC=C1OCCO GLDUZMNCEGHSBP-UHFFFAOYSA-N 0.000 description 1
- YVLNDCLPPGIRCP-UHFFFAOYSA-N 2-nitro-3-phenylprop-2-enoic acid Chemical compound OC(=O)C([N+]([O-])=O)=CC1=CC=CC=C1 YVLNDCLPPGIRCP-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PFJFNQUFMTYCHB-UHFFFAOYSA-N C[SiH2]N[SiH3] Chemical compound C[SiH2]N[SiH3] PFJFNQUFMTYCHB-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- SOMQZSKOHUXZKT-UHFFFAOYSA-N Cl(=O)(=O)O.[Ar] Chemical compound Cl(=O)(=O)O.[Ar] SOMQZSKOHUXZKT-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- WWLUSQGASAYCPT-UHFFFAOYSA-N [Re].[Si] Chemical compound [Re].[Si] WWLUSQGASAYCPT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JJDYDNFZWRFDFV-UHFFFAOYSA-N azane chloro hypochlorite Chemical compound O(Cl)Cl.N JJDYDNFZWRFDFV-UHFFFAOYSA-N 0.000 description 1
- QLULGSLAHXLKSR-UHFFFAOYSA-N azane;phosphane Chemical compound N.P QLULGSLAHXLKSR-UHFFFAOYSA-N 0.000 description 1
- 239000004067 bulking agent Substances 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 125000001721 carboxyacetyl group Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 239000004459 forage Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- FDZZZRQASAIRJF-UHFFFAOYSA-M malachite green Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](C)C)C=C1 FDZZZRQASAIRJF-UHFFFAOYSA-M 0.000 description 1
- 229940107698 malachite green Drugs 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- PGSADBUBUOPOJS-UHFFFAOYSA-N neutral red Chemical compound Cl.C1=C(C)C(N)=CC2=NC3=CC(N(C)C)=CC=C3N=C21 PGSADBUBUOPOJS-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- ZDWVWKDAWBGPDN-UHFFFAOYSA-O propidium Chemical compound C12=CC(N)=CC=C2C2=CC=C(N)C=C2[N+](CCC[N+](C)(CC)CC)=C1C1=CC=CC=C1 ZDWVWKDAWBGPDN-UHFFFAOYSA-O 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- HKFSBKQQYCMCKO-UHFFFAOYSA-N trichloro(prop-2-enyl)silane Chemical compound Cl[Si](Cl)(Cl)CC=C HKFSBKQQYCMCKO-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- LLWJPGAKXJBKKA-UHFFFAOYSA-N victoria blue B Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC(=CC=1)N(C)C)=C(C=C1)C2=CC=CC=C2C1=[NH+]C1=CC=CC=C1 LLWJPGAKXJBKKA-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/562,867 US5962183A (en) | 1995-11-27 | 1995-11-27 | Metal ion reduction in photoresist compositions by chelating ion exchange resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW442709B true TW442709B (en) | 2001-06-23 |
Family
ID=24248131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085113578A TW442709B (en) | 1995-11-27 | 1996-11-06 | Metal ion reduction in photoresist compositions by chelating ion exchange resin |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5962183A (enExample) |
| EP (1) | EP0863925B1 (enExample) |
| JP (1) | JP3805373B2 (enExample) |
| KR (1) | KR100412530B1 (enExample) |
| CN (1) | CN1097601C (enExample) |
| DE (1) | DE69611837T2 (enExample) |
| TW (1) | TW442709B (enExample) |
| WO (1) | WO1997019969A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5830990A (en) * | 1992-07-10 | 1998-11-03 | Clariant Finance (Bvi) Limited | Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists |
| US5837417A (en) * | 1994-12-30 | 1998-11-17 | Clariant Finance (Bvi) Limited | Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition |
| US5750031A (en) * | 1995-09-26 | 1998-05-12 | Clariant Finance (Bvi) Limited | Process for producing surfactant having a low metal ion level and developer produced therefrom |
| US6576139B1 (en) * | 1996-07-30 | 2003-06-10 | Kenneth C. Hou | Process for purifying photoresist composition employing a filter sheet |
| US6379551B1 (en) * | 1997-08-18 | 2002-04-30 | Pall Corporation | Method of removing metal ions using an ion exchange membrane |
| US5936071A (en) * | 1998-02-02 | 1999-08-10 | Clariant Finance (Bvi) Limited | Process for making a photoactive compound and photoresist therefrom |
| TW536666B (en) * | 1998-02-02 | 2003-06-11 | Clariant Int Ltd | Process for producing a photoresist composition having a reduced tendency to produce particles |
| US6217667B1 (en) * | 1999-09-24 | 2001-04-17 | Semitool, Inc. | Method for cleaning copper surfaces |
| US6221568B1 (en) * | 1999-10-20 | 2001-04-24 | International Business Machines Corporation | Developers for polychloroacrylate and polychloromethacrylate based resists |
| KR100422941B1 (ko) * | 2001-01-04 | 2004-03-12 | 주식회사 엘지화학 | 고분자 용액 내 잔류 금속 화합물의 제거 방법 |
| US6610465B2 (en) * | 2001-04-11 | 2003-08-26 | Clariant Finance (Bvi) Limited | Process for producing film forming resins for photoresist compositions |
| US20040206702A1 (en) * | 2002-08-08 | 2004-10-21 | Davidson James M. | Use of an oxidizer to improve trace metals removal from photoresist and photoresist components |
| KR20080037050A (ko) * | 2005-08-26 | 2008-04-29 | 엔테그리스, 아이엔씨. | 교환 수지를 함유하는 다공성 막 |
| JP5172118B2 (ja) * | 2006-08-04 | 2013-03-27 | 三菱レイヨン株式会社 | 重合体湿粉、重合体湿粉の製造方法、重合体の製造方法およびレジスト組成物の製造方法 |
| JP5556046B2 (ja) * | 2009-03-31 | 2014-07-23 | 栗田工業株式会社 | 粗イオン交換樹脂の精製用の処理液 |
| KR20190046873A (ko) * | 2016-08-30 | 2019-05-07 | 롬 앤드 하스 캄파니 | 저-나트륨 수지 |
| CN109426070A (zh) | 2017-08-25 | 2019-03-05 | 京东方科技集团股份有限公司 | 光刻胶组合物、金属图案以及阵列基板的制备方法 |
| JP7137318B2 (ja) * | 2018-02-22 | 2022-09-14 | オルガノ株式会社 | 被処理液の精製方法 |
| CN111902773B (zh) * | 2018-03-26 | 2024-09-06 | 富士胶片株式会社 | 感光性树脂组合物及其制造方法、抗蚀剂膜、图案形成方法以及电子器件的制造方法 |
| CN113198549B (zh) * | 2021-04-26 | 2023-01-31 | 宁波南大光电材料有限公司 | 一种去除光刻胶树脂中的金属杂质的方法 |
| US12331155B2 (en) | 2021-05-04 | 2025-06-17 | Sachem, Inc. | Strong binding metal-chelating resins using macrocycle molecules |
| TW202310925A (zh) | 2021-05-04 | 2023-03-16 | 美商沙坎公司 | 強結合金屬螯合樹脂 |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2929808A (en) * | 1956-04-04 | 1960-03-22 | Exxon Research Engineering Co | Removal of metal contaminants in polymerization processes |
| US4033909A (en) * | 1974-08-13 | 1977-07-05 | Union Carbide Corporation | Stable phenolic resoles |
| US4033910A (en) * | 1975-09-26 | 1977-07-05 | Union Carbide Corporation | Methyl formate as an adjuvant in phenolic foam formation |
| GB1509354A (en) * | 1976-04-24 | 1978-05-04 | Maruzen Oil Co Ltd | Process for purifying halogenated alkenyl-phenol polymers |
| US4250031A (en) * | 1977-03-01 | 1981-02-10 | Unitika Ltd. | Phenolic chelate resin and method of adsorption treatment |
| US4195138A (en) * | 1978-06-26 | 1980-03-25 | The Dow Chemical Company | Chelate resins prepared from the cured reaction product of a polyalkylenepolyamine and epoxide |
| US4452883A (en) * | 1983-05-17 | 1984-06-05 | Minnesota Mining And Manufacturing Company | Barrier resin for photothermographic color separation |
| US4584261A (en) * | 1984-07-27 | 1986-04-22 | E. I. Du Pont De Nemours And Company | Process for etching nonphotosensitive layer under washoff photopolymer layer |
| US4567130A (en) * | 1984-07-27 | 1986-01-28 | E. I. Du Pont De Nemours And Company | Process for etching single photopolymer layer utilizing chemically soluble pigments |
| JPH063549B2 (ja) * | 1984-12-25 | 1994-01-12 | 株式会社東芝 | ポジ型フォトレジスト現像液組成物 |
| US4636540A (en) * | 1985-07-08 | 1987-01-13 | Atlantic Richfield Company | Purification of polymer solutions |
| US4784937A (en) * | 1985-08-06 | 1988-11-15 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant |
| JPS6232453A (ja) * | 1985-08-06 | 1987-02-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト用現像液 |
| US4747954A (en) * | 1985-09-16 | 1988-05-31 | The Dow Chemical Company | Removal of metals from solutions |
| US4721665A (en) * | 1986-09-29 | 1988-01-26 | Polychrome Corporation | Method for neutralizing acidic novolak resin in a lithographic coating composition |
| JPS6472155A (en) * | 1987-09-12 | 1989-03-17 | Tama Kagaku Kogyo Kk | Developing solution for positive type photoresist |
| GB8729510D0 (en) * | 1987-12-18 | 1988-02-03 | Ucb Sa | Photosensitive compositions containing phenolic resins & diazoquinone compounds |
| JPH01228560A (ja) * | 1988-03-08 | 1989-09-12 | Hitachi Chem Co Ltd | 不純金属成分の低減された溶液の製造法 |
| DE68927639T2 (de) * | 1988-08-10 | 1997-04-24 | Hoechst Celanese Corp | Lichtempfindliche novolak-harze |
| US5212044A (en) * | 1988-09-08 | 1993-05-18 | The Mead Corporation | Photoresist composition including polyphenol and sensitizer |
| JPH03128903A (ja) * | 1989-07-13 | 1991-05-31 | Fine Kurei:Kk | 合成樹脂の改質方法および改質合成樹脂 |
| DE3923426A1 (de) * | 1989-07-15 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt |
| JPH0465415A (ja) * | 1990-07-04 | 1992-03-02 | Hitachi Chem Co Ltd | 不純金属成分の低減されたノボラツク樹脂の製造法 |
| US5446125A (en) * | 1991-04-01 | 1995-08-29 | Ocg Microelectronic Materials, Inc. | Method for removing metal impurities from resist components |
| US5378802A (en) * | 1991-09-03 | 1995-01-03 | Ocg Microelectronic Materials, Inc. | Method for removing impurities from resist components and novolak resins |
| AU648704B2 (en) * | 1991-11-25 | 1994-04-28 | National Starch And Chemical Investment Holding Corporation | Method of extruding starch under low moisture conditions using feed starch having coarse particle size |
| JPH0768297B2 (ja) * | 1991-11-28 | 1995-07-26 | 丸善石油化学株式会社 | フォトレジスト用ビニルフェノール系重合体の精製方法 |
| WO1993012152A1 (en) * | 1991-12-18 | 1993-06-24 | Hoechst Celanese Corporation | Metal ion reduction in novolak resins |
| KR100242920B1 (ko) * | 1992-03-06 | 2000-03-02 | 잰대머 | 저수준의 금속이온을 갖는 포토레지스트(rhotoresists having a low level of metal ions) |
| US5300628A (en) * | 1992-06-29 | 1994-04-05 | Ocg Microelectronic Materials, Inc. | Selected chelate resins and their use to remove multivalent metal impurities from resist components |
| US5830990A (en) * | 1992-07-10 | 1998-11-03 | Clariant Finance (Bvi) Limited | Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists |
| SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
| CA2097791A1 (en) * | 1992-08-28 | 1994-03-01 | Sunit S. Dixit | High aspect ratio, flexible thick film positive photoresist |
| EP0671025B1 (en) * | 1992-11-25 | 1997-08-13 | Hoechst Celanese Corporation | Metal ion reduction in bottom anti-reflective coatings for photoresists |
| US5286606A (en) * | 1992-12-29 | 1994-02-15 | Hoechst Celanese Corporation | Process for producing a developer having a low metal ion level |
| WO1994014858A1 (en) * | 1992-12-29 | 1994-07-07 | Hoechst Celanese Corporation | Metal ion reduction in polyhydroxystyrene and photoresists |
| US5476750A (en) * | 1992-12-29 | 1995-12-19 | Hoechst Celanese Corporation | Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists |
| US5472616A (en) * | 1993-10-27 | 1995-12-05 | Shipley Company, Inc. | Modified anion exchange process |
| US5350714A (en) * | 1993-11-08 | 1994-09-27 | Shipley Company Inc. | Point-of-use purification |
| US5525315A (en) * | 1993-12-07 | 1996-06-11 | Shipley Company, L.L.C. | Process for removing heavy metal ions with a chelating cation exchange resin |
| US5500127A (en) * | 1994-03-14 | 1996-03-19 | Rohm And Haas Company | Purification process |
| IT1268313B1 (it) * | 1994-07-28 | 1997-02-27 | Orthofix Srl | Attrezzatura meccanica per il centraggio di fori ciechi per viti ossee di chiodi intramidollari |
| WO1996012214A1 (en) * | 1994-10-12 | 1996-04-25 | Hoechst Celanese Corporation | Low metal ion photoactive compounds and photoresists compositions produced therefrom |
| US5521052A (en) * | 1994-12-30 | 1996-05-28 | Hoechst Celanese Corporation | Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom |
| US5614352A (en) * | 1994-12-30 | 1997-03-25 | Hoechst Celanese Corporation | Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin |
| US5837417A (en) * | 1994-12-30 | 1998-11-17 | Clariant Finance (Bvi) Limited | Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition |
| US5750031A (en) * | 1995-09-26 | 1998-05-12 | Clariant Finance (Bvi) Limited | Process for producing surfactant having a low metal ion level and developer produced therefrom |
| US5656413A (en) * | 1995-09-28 | 1997-08-12 | Hoechst Celanese Corporation | Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom |
-
1995
- 1995-11-27 US US08/562,867 patent/US5962183A/en not_active Expired - Fee Related
-
1996
- 1996-11-06 TW TW085113578A patent/TW442709B/zh not_active IP Right Cessation
- 1996-11-21 CN CN96198607A patent/CN1097601C/zh not_active Expired - Fee Related
- 1996-11-21 KR KR10-1998-0703805A patent/KR100412530B1/ko not_active Expired - Fee Related
- 1996-11-21 WO PCT/US1996/018784 patent/WO1997019969A1/en not_active Ceased
- 1996-11-21 DE DE69611837T patent/DE69611837T2/de not_active Expired - Fee Related
- 1996-11-21 JP JP52057097A patent/JP3805373B2/ja not_active Expired - Fee Related
- 1996-11-21 EP EP96940856A patent/EP0863925B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69611837D1 (de) | 2001-03-29 |
| WO1997019969A1 (en) | 1997-06-05 |
| DE69611837T2 (de) | 2001-08-16 |
| JP2000501201A (ja) | 2000-02-02 |
| KR19990071532A (ko) | 1999-09-27 |
| EP0863925A1 (en) | 1998-09-16 |
| EP0863925B1 (en) | 2001-02-21 |
| JP3805373B2 (ja) | 2006-08-02 |
| KR100412530B1 (ko) | 2004-04-29 |
| US5962183A (en) | 1999-10-05 |
| CN1097601C (zh) | 2003-01-01 |
| CN1202913A (zh) | 1998-12-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |