TW434763B - Semiconductor device having external connecting terminals and process for manufacturing the device - Google Patents

Semiconductor device having external connecting terminals and process for manufacturing the device Download PDF

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Publication number
TW434763B
TW434763B TW088118814A TW88118814A TW434763B TW 434763 B TW434763 B TW 434763B TW 088118814 A TW088118814 A TW 088118814A TW 88118814 A TW88118814 A TW 88118814A TW 434763 B TW434763 B TW 434763B
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TW
Taiwan
Prior art keywords
insulating resin
external terminal
forming surface
newly
electrode
Prior art date
Application number
TW088118814A
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English (en)
Inventor
Mitsutoshi Higashi
Hideaki Sakaguchi
Kazunari Imai
Masahiro Kyozuka
Mitsuharu Shimizu
Original Assignee
Shinko Electric Ind Co
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Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Application granted granted Critical
Publication of TW434763B publication Critical patent/TW434763B/zh

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434763 經濟部智慧財產局員工消费合作社印製 Α7 Β7 五、發明說明（1 ) (發明領域） 發明背景 1發明領域 本發明係有關半導體裝置及製備此裝置之方法。 2.相關技藝之描述 實質督具有相同於半導體晶片之尺寸之半導艘裝置( 如過去所挺出者）顯示於第1〇圊。於此半導體裝置中’作 為外接端子12之電線被彆曲且被附接至半導體晶片1〇之它 極端子形成表面。第10圖係半導體裝置之部份放大圖。參 考編號14表示電極端子，其被置於半導體元件1〇之表面上 。參考編號16表示鈍態膜，參考編號17表示電絕緣層且參 考編號18表不裝新電線或二級電線部份。每一裝新電線部 份18於其一端接連至電極端子。裝新電線部份18之另一端 被成型為用以連接外接端子12之墊部份，外接端子12係 藉由施用鎳合金等之保護電鍍12b至金質電線12a之外表面 而製得。 第11 〇)至11 (j)圖顯示於半導體晶片1 〇之電極端子形 成表面上使用電線形成外接端子12之製備方法β 第11(a)顯示電極端子14被曝露時，半導體元件1〇之 電極端子形成表面以鈍性膜6復蓋之狀態。第11(b)囷顯示 形成電絕緣層17之步驟。電絕緣層丨7係藉由以具有電絕緣 性質之樹脂材料（諸如’聚醯亞胺樹脂）覆蓋電極端子形成 表面’且此部份（其間電極端子14被形成）被蝕刻以曝露二 電極端子14。第li(c)圖顯示於電極端子形成表面上形成 X 297公釐） -4 -----；---：---y!裝--- (請先聞讀背面之注意事巩再填寫本頁) i-δ . 經濟部智慧財產局員工消费合作社印M. A7 ____B7__ 五、發明說明（2 ) 新裝電線部份18之步驟。首先，鈦-鎮合金被喷錢以形成 金屬層18a’然後’金合金藉由喷濺金或以金電鍍而形成 。金屬層18a及金層18b被層合，且金屬層i8a被電連接至 電極端子14。 第11(d)顯示阻性圖案20被形成作為蝕刻金層18b之狀 態。阻性圖案20被形成以覆蓋其中金層18b於蝕刻期間被 产 留下之部份。第11(e)圖顯示預定金圖案18c藉由蝕刻金層 18b而形成之狀態。 第11(f)顯示金圊案18c以留下結合部份之方式以阻性 物22覆蓋之狀態’而使金質電線與其結合，以便使金質電 線藉由電線結合而結合至金質圖案。第11(g)圖顯示藉由 使用電線結合方法使金電線12a結合至金圖案18c之部份之 狀態。金電線12a被彎成L型，且端部被切割且向上弯曲 。第11(h)圖顯示施用諸如鎳合金電錄之保護電鍵至金電 線12a表面上之方法。此保護電鍍12b可藉由使用金層18a .广 作為電鍍供料線藉由電解電鍍施用之。 第ll(i)圖顯示阻性物22被移除之狀態。金屬層18钍以 此狀態被蝕刻以形成作為獨立圖案之新裝電線部份i 8，如 第ll(j)圖。於此藉由姓刻金屬層18a形成新裝電線部份is 之方法^，姓刻係藉由使用姓刻溶液進行，其蚀刻金屬層 18a’但不腐蚀金層18b。結果’具有獨立電線圖案之新裝 電線部份18被形成於半導體元件10之電極端子形成表面上 ’且半導體裝置可於外接端子12被植入新裝電線部份18 内之後獲得。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） n n n I - n n n n It At-^eJ* rt If ft t— ] I n f (請先閱讀背面之注意事項再填寫本頁) 434763
五、發明說明（3 ) 金電線12a被彎曲且成型為1型，如上所述者，如此 ，外接端子12具有撓性及預定之緩衝性質。此半導體裝 置被封裝’而每一外接端子12之末梢端部份被弩曲至封 裝基材。因此，當外接瑞子12具有緩衝性質，當半導體 裝置封裝時等於封裝基材及半導體裝置所產生之熱應力問 題可被避免。 但是’具有由金電線12a形成之外接端子12之半導體 裝置並非無用以使每一外接端子12之末梢端部份結合至 封裝基材之焊料黏著至新裝電線部份18之表面之問題，且 誘發短路，及於鉛電線間因吸收濕氣而發展之移動。此等 問題之產生係因外接端子12及新裝電線部份18被形成而 曝露於電極端子形成表面上且焊料於包裝期間可能蠕動之 故。 本發明之綜述 於解決此等問題，本發明係有關提供一種半導體裝置 ’其具有藉由弩曲電線而形成之外接端子且電連接至形成 於半導體元件之電極形成表面上之電極，其中該外接端子 具有預定之緩衝性質，且可適當避免封裝時之熱應力，且 能可信賴地除去封裝期間新裝電線部份之電短路問題，及 使半導艘裝置之處理於封裝期間更簡單。本發明亦係有關 提供製備此一半導體裝置之方法。 依據本發明，其提供一種半導體裝置，其包含： 具有電極形成表面之半導體元件，於該表面上至少一 電極端子及新裝電線部份被形成，新裝電線部份被電連接 本紙張尺度適用中國國家標準<CNS)A4规格（2l〇 x 297公爱） (請先閲讀背面之注意事項再填寫本頁) —裝
----^ --------7 I 經濟部智慧財產局貝Η消费合作社印製 A7
五、發明說明（4 ) 至電極端子：由電線製狀外接料具有連接至新裝電線 邹份之基本端及自其延儲之末梢端；及電絕緣樹脂，其以 使外接端子之至少未梢端自絕緣樹脂曝露出之方式覆蓋電 極带成表面。 卜接端子藉由電線結合接連至新裝電線部份且於其基 部端及末梢端之m間部份具有實質上為[型。 依據本發明之另一方面，其提供-種製備半導艘裝置 之方法’ β裝置包含具有電極形成表面之半導體元件，於 該表面上至夕電極端子及新裝電線部份被形成，新裝電 線部伤被電連接至電極端子；該方法包含下述步称：使電 線之一端“至㈣電線部份以便以使外接端子自其延伸 且以新裝電《份讀之方切成外接端子；”絕.緣樹 月旨塗覆電極形成表面及外接端子之外表面；及自該外接端 子之末梢端移除一部份電絕緣樹脂以使其自絕緣樹脂曝露 出。 .广 經 濟 部 智 慧 財 產 局 員 工 消 t 合. 作 社 印 製 於結合方法期間，電線之一端先被結合至新裝電線部 份，然後，實質上L型之部份形成於其中間部份。 電極形成表面藉由旋轉塗覆或噴灑塗覆以電絕緣樹脂 塗覆。 電極形成表面藉由使半導體元件及外接端子一起浸清 於液趙絕緣樹脂内而以電絕緣樹腊塗覆。 半導髏元件之電極形成表面以電絕緣樹腊塗復至外接 端子被埋於絕緣樹脂内之深度；然後，—部份電絕緣樹脂 被移除’以使外接端子之末梢端自絕緣樹腊曝露出。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱 434763 A7 B7 五、發明說明（ 一部份電絕緣樹脂藉由蝕刻移除。 一部份電絕緣樹脂藉由使外接端子之頂端浸潰於剝離 溶液内而移除。 圏示簡要說明 第1圖係顯示依據本發明之實施例之半導體裝置之結 構； 第2(a)及2(b)圊係用以解釋製備如第1圖所示半導體裝 置之方法之例示圖； 第3圖係顯示依據本發明之另一實施例之半導體裝置 之結構； 第4圖係顯示依據本發明之另一實施例之半導趙裝置 之結構之截面圖； 第5圖係顯示依據本發明之另一實施例之半導親裝置 之結構之截面圊； 第6(a)至6(c)及第7(a)及7(b)圖係解釋®，其每一者被 用以解釋製備如第5圖所示半導體裝置之方法； 第8(a)及8(b)圖係解釋圖，其每一者係用以解釋當半 導體裝置被封裝時之焊料蠕動； 第9(a)及9(b)圊係解釋圖，每一者被用以解釋製備依 據本發明另一實施例之半導體裝置之方法； 第10圖係顯示習知技藝已知之半導體裝置之結構； 第11(a)至ll(j)圖係解釋製備習知技藝已知之半導趙 裝置之方法之解釋囷。 -------,---711裝· I — (請先閱讀背面之注意事項再填寫本I> 經濟部智慧財產局員工消费合作社印«
本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公溲 A7
經濟部智慧財產局員工消費合作社印製 立、發明說明（6 ) 較佳實施例之詳細描述 其後，本發明之較佳實施例將被詳細描述。 第1圖顯示依據本發明實施例之半導體裝置。於依據 此實施例之半導體裝置中，每一外接端子12藉由使金電 線12a彎曲成L型（由側視圖看）而製得，且被連接或二級接 線形成於半導鱧元件10之電極端子形成表面上之新裝電線 ρ 部份18，其係以第10圖所示之半導體裝置相同方式為之。 雖然於此實施例中外接端子12具有由侧視覲之為L型者 ，其可具有其它形狀，諸如，S型或彎曲形狀（諸如，弧形） 。新裝電線部份18形成於覆蓋鈍性膜16之電絕緣層丨7之表 面上’而其一端被接連至電極端子14。參考編號iga表示 接連至電極端子14之金屬層。 此實施例之半導體裝置具有實質上相同於第1〇圖所示 之傳統半導體裝置之結構，但形成於電極端子形成表面上 之新裝電線部份18被覆以絕緣樹腊3 0。外接端子12自基 '广 部曝露出，但電極端子形成表面之整個表面被覆以絕緣樹 脂30。因為電極端子形成表面以此方式覆以絕緣樹脂3〇， 新裝電線部份18被保護而不被曝露至外側。結果，其能避 免焊料黏著至新裝電線部份18及誘發鉛電線間之電短路， 及相鄰新裝電線部份18間產生之移動之問題β結果，依據 此實施例之半導體裝置可以可信賴方式封裝而不會造成鉛 電線間之電短路，且於封裝期間輕易處理。 製備具有半導體裝置之電極端子形成表面被覆以絕緣 樹脂30之此一結構之半導體裝置之製備方法其至製備步驟 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 9 1 ιί·裝--------訂---------線 (請先閱讀背面之注意事項再填窝本頁) 經濟部智慧財產局貝工消费合作社印製· 43476 3 A7 B7 五、發明說明（7 ) ⑴係相同於製備如第11圖所示之習知技藝之半導體裝置 之製備方法。於此處理步騍⑴之後，電極端子形成表面 被塗復具有電絕緣性質之樹脂材料，然後施行固化/第2(a) 圖）。其次，塗覆期間黏著至外接端子12外表面之樹脂材 料30a藉由蝕刻移除（第2(b)圖），提供半導體裝置。以樹脂 材料塗覆半導體元件10之電極端子形成表面之方法包含旋 轉塗覆、喷灑等。 依據此實施例之半導體裝置係其間半導體元件10之電 極端子形成表面被覆以絕緣樹脂10且外接端子12自基部 曝露出之型式。祖反地，第3及4圖所示之實施例之半導體 裝置係其中半導體元件10之電極端子形成表面被覆以相對 較厚之絕緣樹脂丨〇且僅外接端子12之末梢端部份自絕緣樹 脂30之外表面曝露出。 於第3圖所示之實施例令，外接端子12以如上所述實 施例般之相同方式被弯曲成L型（由侧視圖之），且此外接 端子12之末梢端部份自絕緣樹脂30之外表面曝露。外接端 子12具有形成於金電線12a之外表面上f保護電鍍12b » 於第4囷所示實施例中，外接端子12以自電極端子形 成表面垂直向上延伸之方式成型》外接端子12之末梢端 部份自絕緣樹脂30之外表面凸出，且焊料塊32形成於外接 端子12之未梢端部份。焊料塊32可藉由印刷焊料糊，將其 施用於外接端子12之未梢端部份及重新成形該焊料而形成 於外接端子12之未梢端部份^為使焊料塊32結合至外接端 子12之未梢端部份，外接端子12較佳係由金電線本身或以 本紙張尺度通用1P S國豕準（CNS)A4規格（21Q X 297公爱 -----!---Γ---Μ.!裝--- 一' (請先閱讀背面之注意事項再填寫本頁) si· 經濟部智慧財產局員工消費合作社印轧 A7 B7 主、發明說明（8 ) 纪電錄而成之金電線或以鎳_鈷合金電鍍及進一步以鈀電 鍵而成之金電線製成’以便改良其藉由焊料而得之可濕化 性。 於第3及4所示之實施例中，外接端子12被埋於絕緣樹 脂30内。因此，此等實施例提供下述優點：以絕緣樹脂3〇 覆蓋電極端子形成表面之操作變得相對較簡單。當此等半 严導體裝置被製備時’至形成外接端子12之處理步驟係相同 ' 於習知搜藝方法之處理步驟。於外接端子12形成後，半導 體元件10之電極端子形成表面之整個表面被以使外接端子 12埋入之方式塗覆絕緣樹脂，且絕緣樹脂3〇之外表面被蝕 刻’如此’外接端子12之未梢端部份自絕緣樹脂30之表面 曝露出。 當外接端子12如第3及4圖所示被埋入絕緣樹脂30内（ 其末梢端除外）’具有低彈性模量之絕缘樹脂3〇較佳被使 . 用’如此’熱應力可於封裝操作期間於絕緣樹脂30之部份 产 減緩。具有.不高於I Kpa之彈性模量之樹脂材料係適於絕 緣樹脂’且此一樹脂之例子包含環氧樹脂、丙烯樹脂、矽 _樹脂等。當具有此一低彈性模量之絕緣樹脂3〇被使用時 ，於半導體裝置封裝期間之熱應力等可被有效減低。再者 ’封裝期間之電線之電短路之問題可被去除，且可提供輕 易處理之半導體裝置。 依據上述每一實施例之半導體裝置係使用外接端子12 ’其係藉由施用鎳-鈷合金之保護電鍍12b於金電線12a而 形成。當半導體晶片10之電極端子形成表面被覆以絕緣樹 本紙張尺度適用中國國家標準（CMS)A4規格（210 X 297公釐） -------- ---------i -----訂--------- {靖先閱讀背面之注意事項再填寫本頁> 434763 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（9 ) 腊30時（如第3及4圖所示）’其亦可能未以保護電鍍12b覆 蓋外接端子12之外表面。絕緣樹脂3 〇保護外接端子12。 第5圖顯示依據本發明另一實施例之半導體裝置。於 依據此實施例之半導體裝..置中，電極端子形成表面（包含 新裝電線部份18)以具有電絕緣性質之絕緣樹脂3〇完全覆 蓋β自電極端子形成表面突出之外接端子12被覆以絕緣樹 脂30’但接連至封裝基材之其末梢端部份除外^因包含新 裝電線部份1 8之電極端子形成表面被覆以絕緣樹脂3〇，新 裝電線部份18被保護免於被曝露於外側。結果，半導體裝 置封裝斯間之焊料黏著至新裝電線部份18及誘發鉛電線間 之電短路乞問題可被除掉’且亦能除去相鄰相鄰鉛電線間 產生之移動之問題。 金屬層19係Pd電鍍層，其形成結合新裝電線部份18 之金電線12 a之區域。此一金屬層19並非必需》 因為絕緣樹脂30覆蓋金電線12a之外表面，此實施例 使用具有低彈性模量及特定程度之可撓性之樹脂，如此， 外接端子12可具有於被覆以絕緣樹脂3 0之狀態下所需之可 撓性。具有最高達lKpa炙彈性模量之樹脂材料可適當用 於絕緣樹脂30，且每一樹脂之較佳例子係環氧樹脂或丙烯 型樹脂材料，或矽酮樹脂。當金電線12a之外表面被覆以 具有低可撓性之絕緣樹脂30，外接端子12被供以比金電線 12 a之外表面被復以保護電鍍12b(如習知技藝製得）時更高 及足夠之可撓性，且應力減低之操作於封裝期間變得更優 異。 本紙張尺度適用中國國家標準（CNS〉A4規格（210 x 297公釐） 12 n n ϋ ϋ n i n ϋ ϋ I ϋ tt f 一 SI i I n «f I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印M- A7 ___B7_ 主、發明說明（10 ) 第6及7圊顯示此實施例之半導體裝置之製備方法。第 6(a)圖顯示其中新裝電線部份18形成於半導體元件之電極 端子形成表面上之狀態》於此實施例中，保護電錢12b未 被如外接端子12般被施用於金電線12a之外表面。因此， 新裝電線部份18可藉由第11圖之習知技藝之處理中之處理 步驟（e)内之蝕刻金屬層18a而形成。另一形成新裝電線部 一 份18之方法包含藉由喷濺等之方式於形成於電極端子形成 ^ 表面上之電絕緣層Π之表面上形成導體層，形成僅覆蓋其 間新裝電線部份18被形成於導體層表面上之保份之阻性物 圖案’及以阻性圖案作為屏罩且以留下新裝電線部份18之 方式蝕刻導體層之步驟。 第6(b)圖顯示其中外接端子12藉由使金電線12a結合 至新裝電線部份1 8而形成之狀態。金電線12a係藉由使用 用於半導體裝置之電線結合之結合工具先結合至新裝電線 ， 部份18，然後，被彎成L形，且藉由控制如圖所示之結合 工具24之移除使其成外接端子12所需之形狀。 第6(c)圖顯示電極端子形成表面被浸潰於液體絕緣樹 脂30内之狀態’如此，半導體元件1〇之電極端子形成表面 及外接端子12之外表面可被塗覆絕緣樹脂30。 順便一提’其可將液體絕緣樹脂30噴灑於半導體元件 10之電極端子形成表面，且以絕緣樹脂30覆蓋外接端子12 之電極端子形成表面之整個表面，以代替使半導趙元件10 之電極端子形成表面及外接端子12浸潰於液體絕緣樹脂3 〇 ϋ張尺度適用中關家標準（CNS)A4規格⑵Q x 297公笼） "~~~-- -------------裝------- -訂---------線 <請先閱讀背面之注意事項再填寫本頁> 434763 A7 B7 五、發明說明（η ) (謗先閱讀背面之注意事項再填寫本頁) 第7(a)圖顯示半導體元件1〇之電極端子形成表面及外 接端子12之外表面被藉由上述處理步驟覆以絕緣樹脂30之 狀態。於電極端子形成表面及外接端子之表面被覆以絕緣 樹脂30後，絕緣樹脂30被固化。 於固化後，外接端子12之末梢端部份被曝露。最後， 外接端子12之末梢端部份先被浸渍於剝離溶液40内’如第 7:(a)圊所示，如此‘，覆蓋外接端子12之末梢端部份之絕緣 樹脂30可被溶解友移除。 順便一提，依絕緣樹脂種類而定，其可先以絕緣樹脂 30覆蓋電極端子形成表面及外接端子12之外表面，然後， 暫時固化絕緣樹脂30，以便溶解及移除覆蓋外接端子12之 末梢端部份之絕緣樹脂30，其後進行真正的固化^絕緣樹 脂3 0被暫時固化之狀態提供絕緣樹脂3 0可被輕易溶解及移 除之優點。 第7(b)圖顯示於其中外接端子12之末梢端部份被曝露 之狀態下形成之丰導體裝置，且非其末梢端部份之外接端 .子12之部份及電極端子形成表面之整個表面以上述方式被 覆以絕緣樹脂30。 經濟部智慧財產局員工消费合作社印製 於所製得之半導體裝置中，外接端子12被覆以絕緣樹 脂30，因而以強化方式支撐。因為絕緣樹脂具有預定之可 撓性’其不會限制外接端子12之可撓性，但可適當減緩半 導體裝置封裝處理期間之熱應力。 於依據此實施例之半導體裝置中，封裝時之焊料可濕 化性可藉由調整外接端子12之末梢端部份之曝露距離而調 本紙張尺度適用中關家襟準（CNS)A4規格（21Q x 297公爱）---J··— j- 經濟部智慧財產局員工消费合作社印览 A7 _____B7__ i、發明說明（u) 整之《當外接端子12之外表面被覆以絕緣樹脂3〇(如第8(a) 圈所示）時’焊料50之蠕動可於置放絕緣樹脂3〇之部份檢 查之。焊料5 0可事先形成於外接端子丨2之末梢端部份，否 則’可事見形成於裝配板之終端部份上。第8(b)圖顯示其 中外接端子12未被覆以絕緣樹脂3〇且焊料50之蠕動產生之 狀態。 产 第9圊顯示其中半導體晶片10之電極端子形成表面被 以使外接端子12被埋入之方式覆以絕樹脂30之實施例》 第9(a)圖顯示其中半導體晶片1〇之電極端子形成表面 被覆以絕緣樹脂30且外接端子12亦被覆以絕緣樹脂30之狀 態β外接端子12僅由金電線且以相同於上述實施例之方式 形成。例如’旋轉塗覆可被用於以絕緣樹脂3〇且以埋置外 接端子12之方式覆蓋外接端子12。 如第9(b)圖所示’於半導體晶片1〇之電極端子形成表 面被覆以絕緣樹脂30之後，絕緣樹脂30之外表面被浸潰於 :广絕緣樹脂3 0之剝離;容液内。以此方式内，僅有外接端子j 2 之末梢端部份可自絕緣樹脂30之表面曝露出。 於製備依據本發明之半導體裝置之方法中，以液體形 式等之絕緣樹脂30覆蓋半導體晶片1〇之電極端子形成表面 之方法’或覆蓋外接端子12之外表面可輕易被完成。因此 ’半導體晶片10之電極端子形成表面可被輕易覆以絕緣樹 脂30。 依據本發明之製備半導體裝置之方法可被應用至其中 各別之半導體晶片係工作件之情況及其中晶導體晶元係工 -本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 15 —·裝--------訂·--------線 <靖先閲讀背面之注意事項再填寫本頁) 434763
五、發明說明（13 ) 作件之情況，且可使用有效製備方法a當半導想晶元係工 作件時，電極端子形成表面被覆以絕緣樹脂3〇，而外接端 子12被置於半導體晶元之電極端子形成表面。其後，半導 體晶元被切成個別之半導體裝置β 每一上述實施例使用此一其中新裝電線部份丨8被置於 半導體晶片之電極端子形成表面上且外接端子12被接連至 新裝電線部份1 8之結構。但是，外接端子12可以使其連接 至電極端子本身而未將新裝電線部份置於電極端子形成表 面18之方式形成之。 紫外線可固化之樹脂可被用作絕緣樹脂3〇 β於此情況 中’於電極端子形成表面被覆以絕緣樹脂3〇後，紫外線可 被輻射至絕緣樹脂30以使其固化。 於依據本發明之半導體裝置中，形成於半導體晶片之 電極端子形成表面上之新裝電線部份被覆以絕緣樹脂。其 後，當半導體晶片被封裝時’半導體裝置係無電短路產生 於鉛線間及移動產生之問題》因為具有預定緩衝性質之材 料被作為覆蓋新裝電線部份之絕緣樹脂，封裝期間產生於 封裝基材及半導體晶片之熱應力可有效減緩，且具有高度 可信賴之半導體裝置可被獲得。 依據製備本發明半導體裝置之方法，半導體晶片之電 極端子形成表面可輕易地被覆以絕緣樹脂，且具有高度信 賴度及可輕易於封裝期間處理之半導體裝置可被獲得。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 請 先 閱 讀 背 之 注 I 項 再 填· ί裝 頁 訂 經濟部智慧財產局貝工消費合作社印製 16 i、發明說明（i4 A7 B7 元件符號對照 經濟部智慧財產局員工消费合作杜印炎 6…純性膜 18b…金層 10…半導體晶片 18c…預定金圖 12…外接端子 19…金屬層 12a…金質電線 20."阻性圖案 12b···保護電鍍 22…阻性物 14…電極端子 24···結合工具 16···鈍態膜 30…絕緣樹脂 17…電絕緣層 3 0 a…樹脂材料 18…裝新電線或二級電線 32…焊料塊 部份 40…剝灕溶液 18a···金屬層 50…焊料 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用t遇國家標準（CNS)A4規格（210 x 297公釐） 17

Claims (1)

  1. ASB8C8D8 434763 六、申請專利範圍 1· 一種半導體裝置，包含： (請先朋讀背面之注意事項再填寫本頁) 半導體兀件，其具有電極形成表面，其該表面上 形成至少一電極端子及新裝電線部份，該新裝電線部 份係電連接至該電極端子； 外接端子’其係由具有接連至該新裝電線部份之 基本端及自其延伸之末梢端之電線製得；及 ' 電絕緣樹脂，其係以使該外接端子之至少該末梢 端自該絕緣樹脂曝露之方式覆蓋該電極形成表面。 2.如申請專利範圍第丨項之半導體裝置，其中該外接端子 藉由電線結合接連至該新裝電線部份且於該基本端及 其末梢端間之其中間部份具有實質上為L型。 3-—種製備半導體裝置之方法，該裝置包含半導體元件 ’其具有電極形成表面’其該表面上形成至少一電極 端子及新裝電線部份’該新裝電線部份係電連接至該 電極端子；該方法包含下述步爾： 使電線之一端彎曲至新裝電線部份，以便以使外 接端子自其延伸且以新裝電線部份支撐之方式形成外 接端子； 經濟部智慧財產局負工消费合作社印¾ 以電絕緣樹脂塗復該電極形成表面及該外接端子 之外表面；及 自該外接端子之末梢端移除一部份電絕緣樹脂以 使其自絕緣樹脂曝露出。 4.如申請專利範圍第3項之方法，其中於結合方法期間， 該電線之一端先被結合至該新裝電線部份，然後實質 本紙張尺度適用中國國家標準<CNS)A4規格<210 X 297公釐） 18 A8B8C8M •广 申請專利範圍 為L型部份形成於其中間部份a 5_如申請專利範圍第3項之方法，其十該電極形成表面藉 由旋轉塗覆或噴灑塗覆以電絕緣樹脂塗覆之。 6. 如令請專利範圍第3項之方法，其中該電極形成表面藉 由使該半導體元件及該外接端子一起浸潰於液體絕緣 樹脂而以電絕緣樹脂塗覆之。 7. 如申睛專利範圍第3項之方法，其中： 該半導體元件之該電極形成表面被塗覆電絕緣樹 脂至使該外接端子被埋於該絕緣樹脂内之深度，然後 一部份該電絕緣樹脂被移除，以使該外接端子之 該末梢端自該絕緣樹脂曝露出。 8. 如申請專利範圍第7項之方法，其中該電絕緣樹脂之一 部份藉由蝕刻移除。 9. 如申請專利範圍第7項之方法，其中該電絕緣樹脂之一 部份藉由使該外接端子之該頂端浸潰於剝離溶液内而 移除。 • I- ilFH -----I---^ ------：--- {請先閱讀背面之注意事項再填窝本頁) — ------j--- , 烴濟部智慧財產局S工消費合作社印製' 19 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐）
TW088118814A 1998-10-30 1999-10-29 Semiconductor device having external connecting terminals and process for manufacturing the device TW434763B (en)

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