TW425620B - Method for forming a spin-on-glass layer - Google Patents

Method for forming a spin-on-glass layer Download PDF

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Publication number
TW425620B
TW425620B TW088112087A TW88112087A TW425620B TW 425620 B TW425620 B TW 425620B TW 088112087 A TW088112087 A TW 088112087A TW 88112087 A TW88112087 A TW 88112087A TW 425620 B TW425620 B TW 425620B
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Taiwan
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layer
sog
isolation
item
patent application
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TW088112087A
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Seung-Jin Lee
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Hyundai Electronics Ind
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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Description

A7 4 2弓620 ________B7_______ ^、發明說明（/ ) 本發明之領域 本發明俺闋於一種製造半導體器件之領域：更特別的 ，其係鬭於形成自旋玻璃層之方法•其可增強做為雇舆 層間隔離層的自旋玻璃層（以下簡稱30G層）之平坦性並 且增強其生産力。 習知技藝說明 一般而言，SOG層僳輔由自旋式塗覆（Spin coating) 所形成•在自旋式塗覆之前•先將矽氣烷或矽酸麴溶解 或分散於溶剤中而形成G溶液·接著透遇噴嘴的散佈， 將該形成的SO G溶液以自旋式塗覆在晶蹰上而形成S0G 層。其後，此塗佈層經過烘烤或硬化進行縮合反醮· 第1圖葆一剖面匪，顯示一種依據習知技蘸製作S0G 層的開放型接受器。在此閿放型接受器Μ中設有一晶 圃支撐桿20。並顯示有一晶鼷3 0置放在與此支播桿連着 的支撐板之上。在此以厢放型接受器進行作自旋式塗霣 的例子中，其塗覆作楽傜在常壓下進行9 現今及將來的趨勢•僳為多層金屬結構中方向比随替 半導髂裝置之高積體傾向而變离。雖然可使用S0G溶液 本身的流動來達成埋層之小孔和平坦性，然而卽使在以 自旋式塗费此SO G層之後，並未完全逹到其平坦性。 更進一步地，以一次自旋式塗覆所形成的S0G層的 厚度你局限在某籲值之内，因為該塗佈的S0 6溶液在自 旋式塗覆作業進行基間會失去流動性。例如，當SO G層 為自矽氧烷或其衍生物的溶液時，若要以一次自旋式塗 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） • II I----------J -----訂 *-------- t請先閱讀背面之注意事項再填寫本頁) ---^^ ' 經濟部智慧財產局員工消費合作杜印製 經濟部智慧財產局員工消費合作社印製 4 256 2 0 A7 _____B7 五、發明說明（> ) 覆來形成厚度大於2 0 0 G A的s 0 6層是頻1為困難的4因此· 在習知技蕤中，在一具有金靨架嫌圓樣40之晶國30上· 形成第一層s 0 G層5 1之後（如附鬭2 a所示 >，再於第一J1 SOG雇51之上形成第二雇SOG層52(如附第2b晒所示 >。意 即，依所痛要的SOG層厚度來決定自旋式塗覆的次數 。例如，當所痛要的SOG層厚度大於2D00A,自旋式塗 覆的次數就應該多增加一次或者一次以上。 如前述銳明，為了要形成所痛要的306層厚度，躭驩 該多進行幾次自旋式塗覆•因此，存在於習知技®中的 問題，傺為此重覆相同的程序而降低了生産力* 尚有S—櫥問题，即當在後鑛作業中形成接*孔時， 在此接諝孔側邊曹因蝕刻羧留物霣而産生弓狀物（bowi-ng)。此問题乃肇因於在金羼架線上之S06層部位比其它 部位來的摩，而此較厚部位則源自於平坦性不足· 仍有另一铕問題，即傳統自旋式塗覆會迪成珠嫌（edge bead) , 因而 增加了 晶圔於 後鑛作 業期閜 ϋ 部位破 -·:善' 、.入 損的機會》 本發明之概要
因此，本發明的目的，换在提供一種用來形成sofl雇 的方法，其能增加平坦性P 又且，本發明的另一目的，係在提供一種用來龄〔成一 增強平坦性的SO G層的方法，其能極度壓制由自旋式 / ( 塗覆所造成的珠鐮之生成，並且在使S0G層形成接觸孔 的钱刻期間抑制弓狀物發生》 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I.------->---:------ f锖先聞讀背面之注碩再填寫本頁) 訂： ’線· A7 . 4,·2ί 上. Β7 五、發明說明（ 依據本發明的一具龌實施例，其提供了 一種形成自旋 玻璃（S06)層的方法，此SOG層會使半導體裝置平坦化， 此方法包括將自旋式塗料塗覆在晶圓之上以形成S0G層 的步嫌（第一步，>;及在一内含晶鬮的封閉式容器中散 佈SOG溶劑，並以旋轉方式使在此封閉式接受器中形成 飽和蒸氣應，而該SOG層表面變為平坦（第二籲步驟）》 依據本發明的方法，此SO G層供以自旋塗佈晶圔之上， 並且該S0G溶劑偽在一内含晶圓的封閉式接受器中散佈， 以使得在該接受器内形成飽和蒸氣壓；因此·能增加S〇G 層的厚度並且增強S0G層的平坦性。 附画之簡略説明 本發明之前述及其它目的以及特色，曹随如下的較佳 具觼丨|例之説明並结合附圈而變為淸楚，其中： 第葆一種接受器的剖面圖，其你依據習知技毎以 m isafs 〇 an ； 圖，肖顯示依據習知技睡並塗佈兩 次雇； 圖3圖係一受器的剖面圓，其依據本發明之一具鱷 實施例以形成S0G層； 第4圖你剖面圈顯示依據本發明之具釀實施例而塗佈 的s優 第傜顯示整個SGG層的厚度之分佈，其依據本發明 之具施例之方法使用酵性溶薄做為S0G的溶劑； 第傺顯示整掴S0G層的厚度之分佈，其依據本發明 -5- 本紙張尺度通用中國國家標準（CNS)A4規格（210 X 297公釐） -----!!·裝.1 I {請先閲讀背面之注专？W-項再填寫本頁) 訂 --線. 經濟部智慧財產扃員工消費合作杜印製 4 2 56 2 0 A7 _____B7_ 五、發明說明（4 ) 之方法使用醚性溶劑撖為SO G的溶劑。 較佳具釀實施例之詳细銳明 (請先閱讀背面之注項再填寫本頁) 本發明将透過後述之具龌資施例參照附圈，詳細説明· 第3麵你一種依據本發明之具醸實施例其用來形成S06 層之接受器的剖面國。第3画中，在内接受器10A中投有 一晶圔支撐样U0»晶園置於舆支播桿Π0連接的支捸板上 。在内接受器10 A上放置一内封Μ 1〇 B以構成一内含晶國 之封閉空間β在内接受器10 Α外面放置一外接受器20Αβ 並且在内接受器20Α外面置上一外封蓋20Ββ如此，外接 受器和外封蓋各自緊緊封住其相對應的内接受器和内封 蓋》 如圖所示，晶圓120被牢牢地固定在輿支播桿110連接 的支撐板上，且S0G溶液透過嘖嘴將此S0G溶液以自_塗 覆方式散佈在晶圃上（未顯示U而S0G溶劑則透遇i職敗 佈在内接受器中並且因而在此由内接受器10 A和内封鏟 10B所封住的封閉空間中構成飽和蒸氣辑β V此時,.在封 聞空間已蒸氣飽和的溶》1之敗佈作業可爸S06游ϋ覆/ 之同時、之前、或者之後進行。： 經濟部智慧財產局員工消費合作社印製 在本發明中，此S0G層可在晶麵之上形成第一麕隔離 層之後，再在此第一層隔離層之上形成第二層隔離層· 亦可在此S0G層上形成第三層隔離層*其中此第一 )|^隔 離層與第三層隔雄層可為傳統式隔離蘑例如氣化#靥、 四氟化三砂層、或者氰氣化矽層等β 此種30 6最好為具有侧鐽含（^823«+1基（此處^僳一自 本紙張尺度適用中國國家標準（CNS)A4規格<210 x 297公釐） 4rT ^ η Α7 Λ 9 : B7___ --, ，五、發明說明（Γ ) 然數）之有機矽酮類。而so 6溶商I最好為«性物質。在本 發明的具餹簧施例中，採用丙二酵二甲醚做為溶爾。不 遇，在本發明中，另可使用醇性物質做為溶劑，雖然其 在效能上不如》性物質· 藉箸S0G溶劑在内接受器1〇 A和内封蓋ΙίϊΒ所封住的封閉 空間内所構成的飽和蒸氣壓，因S0G會再溶回於溶劑使S06 塗層不致失去流動性之故，連鑛地在晶國上進行S0G溶液 之自旋塗覆作業是可行的》 接替，最好此SO G層應在300^0到500 ·(：的溫度下做硬化 處理》 圖顯示如前面方法所述在晶囫上形成S 06靥140 β 丨明之方法，此S0G層140可經一次自旋塗覆就形 技蕤法所塗佈者更大的厚度d並且其平坦性亦增 潁示整値SO G靥的厚度之分佈，其依據本發明之 醇性溶劑的溶劑。附圖5b亦顯示整値S0G 下表依據量測結果其使用酵性溶劑做 為S0G的溶劑以及依據测結果其使用醚性溶 阐做為S06的溶劑之S0G牖及均勻性做了比較β其 ΐ所使用的酵性溶劑為異丙酵，所使用的醚性溶劑為丙 二酵二甲醚，且其SO G材料為AG-2 U(聚甲基矽氧烷類物 g,由美國 Allide Signal Co.所提供}。 本紙張尺度適用中國國家標準（CNS>A4規格（210 x 297公釐） (請先間讀背面之注意事項再填寫本頁) C'-^^Γ 經濟部智慧財產局員工消費合作社印製
4 256 2 0 A7 B7 五、發明說明u ) 酵性溶劑 醚性溶剤 S06塗層之平均厚度 3 3 1 0 . 5 2 A 3 3 4 1 . 3 5 Α 最小學度 3 1 48 . 4 5A 3 2 7 2 . 7 1 Α 最大厚度 34 1 7 . 54A 3 4 1 0 . 2 2 A 最大-最小 26S . 09 A 1 3 7 . 50 A 厚度均勻度 η 2% (諳先閱讀背面之注意事項再填寫本頁) •e. 上表中，厚度均勻度之數值的播得傜使用下列數學式ί ;其中均勻度愈小，平坦性愈佳* U ν 厚度均勻度（χ) = [(最大厚度-最小厚度u(2x厚度平均 值）]X 100 上面兩桓結果皆顯示其SOS層可經一次自旋塗輕形成 • . 比習知技薛者更大的厚度。此埤桌7亦顔示使用睛性溶爾 的S0 (5層的厚度大於使用_性溶劑的S&G層的厚度，並且 塗層厚度的均勻度前者亦較後者為佳》 雖然本發明僅針對某些固定的較佳具鱷實施例做説明 ，實尚可有其它的修改與變化可為之成就卻不傕離本發 明如下之申餹専利項目的精神與範豳。 -8- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) -線- Γ— 經濟部智慧財產局員工消費合作社印製 Γ Γ 經濟部智慧財產局員工消費合作社印製 符號之說明 ίο… 10Λ .. 10Β . 20Α . 20Β . 20 .. 30 .. 40 .. 51 .. 52 ., 110 . 120. 140 . Α7 4 256 2 0 Β7 __ ..開放式接受器 ..内接受器 ..内封蓋 ..外接受器 ..外封蓋 ..支撐稈 ,.晶圆 ..金釀架線画樣 ..第1S0G雇 ..第2S0G層 ..支撐稈 ..晶圓 …S0G層 -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. 經濟部智慧財產局員工消費合作社印製 425620 锰 C8 D8六、申請專利範圍 1. 一種用來形成自旋玻璃（S0G)層之方法，其僳用於使 半導體器件平坦化，此方法包括的步®有： 將自旋式塗覆S0G溶液塗覆在一晶緬上，以使形成 S0G塗層（第一梅步驟）；並且 敗佈S0G溶劑在一内含晶圈的封閉式接受器中，並利 用自旋方式使在此接受罌内溝成一飽和蒸氣壓，而使 得S0G層的表面轉成平坦（第二餹步醣）》 2. 如申讅專利範園第1項之方法，其中所有第一泡步 朦和第二值步骤係皆在封閉式接受器中進行0 3. 如申誚専利範園第1項之方法，其中SO G溶劑的敝 佈作業葆在SO G雇的塗佈作業之同時、之前、或者之 後進行。 4. 如申誚専利範鼷第1項之方法，其中S0G溶爾為_性 溶劑或酵性溶用》 5. 如申餹専利範國第2項之方法，其中S0G溶薄為邂 性溶瘌或酵性溶繭β 6. 如申請專利範園第1項之方法，其中SO G溶劑為丙 二酵二甲醚· 7. 如申鵠《利範圔第2項之方法，其中SO G溶劑為丙 二醇二甲醚。 8. 如申讅專利範圍第1項之方法，其中在SO G層平坦 化之後，此方法進一步包括在300*0到50D°C硬化孩S0G 層之步驟。 9. 如申請専利範画第2項之方法，其中在S0G層平坦化 -1 0- --------.--「笨-- (請先閲讀背面之注項再填寫本頁) 打 本紙張尺度通用中國國家檁準（CNS ) A4规格（210X297公釐） f 經濟部智慧財產局員工消費合作社印製 Α8 Β8 C8 D8 425620 六、申請專利範圍 之後，此方法進一步包括在300 °C到500 °C硬化該SOG 層之步驟〇 10. 如申請專利範圍第1項之方法，其中S0G像由具有 侧鏈含Cxhx+i-i此處，X傺一自然數）之有機矽 酮物所構成。 11. 如申請專利範圄第2項之方法，其中S0G僳由具有槲 雜含CxH2x + i基（此處，X侮一自然數）之有機矽 嗣物所構成。 12 .如申請專利範圃第1項之方法，其中此方法進一步 包括步驟：在做為第二層隔離層之S0G層形成前，先在 晶圓上形成第一層隔離層；並且 視情況地在S06靥上形成第三層隔離雇，其中此SOG 層傜形成在第一層隔離層之上做為第二層隔離層β 13.如申請專利範圍第2項之方法，其中此方法進一步 包括步驟：在做為笫二層隔離層之S0G層形成前，先在 晶圓上形成第一層隔離層；並且 視情況地在S0G層上形成第三層隔離層；其中此SOG 層形成在第一層隔離層之上做為第二層隔離層《 • 14.如申請專利範圍第12項之方法，其中第一層隔離曆 以及第三層隔離層你分別為氧化矽層。 15. 如申請專利範圍第13項之方法，其中第一層隔離層 以及第三層隔離層偽分別為氣化矽層。 16. 如申請專利範圍第12項之方法，其中第一層隔雜層 以及第三層隔離層偽分別為氮氣化砂層。 -1 1 - ---------裝— (請先閱讀背面之注意事項再填寫本頁) '1Τ 線 本紙張尺度逍用中國國家梂準（CNS > Α4规格（210Χ297公釐） A8425620 驾 六、申請專利範圍 7 1X 中 層 離. 隔 曆 1 第 。 中層 其矽 ► 化 法氧 方氮 之為 項別 13分 第係 圔層 範離 利隔 專層 請三 第 及 % ---------;--1--------I I 訂· —-- <請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 2 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）
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KR100314806B1 (ko) 2002-02-19
JP3554686B2 (ja) 2004-08-18

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