TW388070B - Method for an inductively coupled plasma chemical vapor deposition and thin amorphous silicon film transistor utilizing thereof - Google Patents

Abstract

Disclosed is an inductively coupled plasma chemical vapor deposition method for depositing a selected thin film on a substrate from inductively coupled plasma, the method including the steps of: providing a vacuum reaction chamber including an interior bounded, in part by a dielectric shield, the dielectric shield having an amorphous silicon layer on its interior surface, and an antenna arranged outsid the deposition chamber adjacent to the dielectric shield where RF poer is applied; placing the substrate on a stage with the chamber; exhausting the vacuum raction chamber leavin a vacuum state; introducing a reactant gas to the vacuum reaction chamber at a predetermined pressure; and applying RF power to the antenna, whereby inductively coupled plasma for deposition of a thin film from the reactant gas is formed within the vacuum chamber.

Description

Printed by the Consumers 'Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ............. -------- -B7 .. V. Description of Invention (^' " --- < Invention Scope > The present invention relates to inductively coupled plasma chemical vapors, deposition methods, and the use of salty amorphous silicon, microcrystalline silicon, nitrogen silicon films, and amorphous thin film transistors. ≪ BACKGROUND OF THE INVENTION Generally, amorphous silicon, microcrystalline silicon, and silicon nitride films are widely used in semiconductor age and liquid crystal display elements. Amorphous thin film transistors are also widely used in liquid crystal display elements. Pixel electrode driving elements. Especially hydrogenated amorphous silicon transistors are widely used for their excellent characteristics in mass production and large-area display devices. In view of the current situation, in order to manufacture amorphous silicon thin films, fine crystalline silicon Plasma chemical vapor deposition is used for thin film, silicon nitride film, and amorphous silicon thin film transistors. However, the plasma density of this deposition method is very low, only less than 10 (), so the deposition rate of the film is also low. Low, need to increase gas pressure, also This causes the problem of polymer formation. It also has disadvantages such as the existence of electrode materials in the discharge field in the reaction chamber, and contamination of thin film products to reduce the characteristics of the thin film. On the other hand, inductively coupled plasmas have higher capacity than capacitively coupled plasmas. Its plasma generation efficiency is high, and high-density plasmas such as 1011 ~ 1012cm · 3 can be obtained, and it is reported (see PN Wainman et ai. J. Vac Sci

Technol. A13 (5), 2464, 1995) ′ can be discharged at a low pressure of, for example, 0 to 2 m Ding. In addition, Japanese Patent Publication No. 7-60704 also discloses the inductively coupled plasma CVD (Chemical Vapor Deposition). 'About the paper size of Electrical Paper 3 applicable to China National Standards (CNS) A4 specifications (210X297 mm)-(Please read the note on the back before filling this page} / π A7 B7 Employees of the Central Bureau of Standards, Ministry of Economic Affairs Printed by the cooperative V. Description of the invention () and amorphous second with optically excellent characteristics, fine crystal grains, silicon nitride film, and non-crystalline film transistor manufacturing methods have not been disclosed, and this inductor is used When coupling plasma CVD equipment is used to manufacture amorphous silicon, microcrystalline silicon, silicon nitride films, and amorphous transistors, the dielectric window (ie, the shield) is made of oxygen-containing materials such as quartz materials. When depositing a thin film, money is engraved due to the plasma generated by dielectric windows such as quartz materials. Impurities flow into the dielectric material from quartz materials and have a negative effect on the physical properties of the thin film formed in the reaction chamber. In addition, this inductor-type plasma In the CVD device, because the gas injection port forming part of the gas supply mechanism is not provided in the central part of the vacuum reaction chamber, it is installed on the side part where the reaction is heavy. Therefore, the reaction gas supplied to the reaction chamber will not be evenly distributed in the reaction chamber, and there is a disadvantage that a uniform and large-area film cannot be obtained. That is, there is a problem that a high-density and uniform plasma cannot be generated in the reaction chamber. ≪ Summary of the invention > 'The first object of the present invention is to provide an inductively coupled plasma CVD method which can be manufactured in terms of light sensitivity, conductivity, activation energy, optical bandgap, etc. A uniform amorphous dream film with excellent thin film characteristics. A second object of the present invention is to provide an inductively coupled plasma method which is fabricated from a silicon nitride film with film characteristics in terms of breakdown voltage, ship density, etc. 〃 '' The third object of the present invention is to provide an inductively-coupled plasma method that can produce a fine-grained and uniform silicon thin film. 7 (Please read the note on the back before filling this page) Λ

Printed by the Central Consumer Bureau of the Ministry of Economic Affairs, Consumer Cooperative, the fourth purpose of the present invention is to provide a kind of inductively coupled plasma CV]] Wanfa 'It can be manufactured in the field effect mobility, nano voltage (threshold rrge) Wan face has a thin film transistor with excellent Wei characteristics and _ face shape compensation. The purpose of the above disclosure can be achieved by providing a reaction that deposits an oxygen-free shirt layer on the surface of its dielectric window, and the dielectric window is a part of the ambiguous reaction chamber. The inductively-coupled plasma CVD method is based on the method of reacting gas stolen = plasma sink_ to select the method on the substrate of Lai Lin. The vacuum chemistry of its professional at least part of the chamber contains the dielectric t, and the reaction of the dielectric window It has an oxygen-free dream film to the inner surface and is adjacent to the dielectric window. An antenna that can accept RF power is preferably made of a quartz material. The antenna is formed in a helical shape so as to obtain a uniform and high-density electricity, which is evenly arranged on the dielectric window of the reaction chamber. In order to prevent oxygen or impurities from being deposited in the reactor, the oxygen-free silicon film deposited on the surface of the dielectric window is preferably an amorphous silicon layer, a silicon nitride layer or a silicon carbide layer. The substrate is then mounted on a support in a vacuum chemical deposition chamber. Secondly, the gas mechanism caused the vacuum in the reaction chamber, and then the reaction gas was supplied to the chamber. The reaction gas supply chamber is capable of quantitatively supplying at least two kinds of gas to the reaction. The arrangement of the injection ports of the reaction gas supply mechanism can make the reaction gas evenly distributed. The choice of reactive gas composition enables deposition of thin films selected from the group consisting of dielectrics, metals, and semiconductors. Therefore, the selected thin film includes a thin film of a dielectric, a metal, and a semiconductor, and preferably an amorphous sand film, a silicon nitride film, or the like. RF power is supplied to this paper set in the quality window of the neighboring electrical industry. The paper size is applicable to the Chinese standard of Chinese bacteria (CNS) A4 (210X297 mm) (please read the note on the back before filling in this page) Λ1Τ A7 B7 V. Description of the invention (An antenna that can accept RF power. Secondly, in order to form the film heard on the substrate on the support, an inductive coupling plasma is formed in the reaction chamber. According to this-the inductive plasma plasma CVD method, It can obtain excellent uniformity of electrical and optical film characteristics such as reduced conductivity, electrical conductivity, optical gap, and uniform amorphous silicon film, as well as thin films with excellent conductivity, breakdown voltage, and filament degree. The thin and uniform sand film with crystal grains can be obtained. It can also obtain the thin film transistor with excellent electrical characteristics in the field of electric field effect mobility and low voltage limit and containing uniform amorphous silicon film. Therefore, a high-quality TFT LCD can be manufactured. ≪ Simple description of the diagram > In order to further understand the features and technical contents of the present invention, please refer to the following detailed description of the present invention, but the details are for reference only. For illustration, but not for limiting the present invention, the related drawings are as follows: FIG. 1 is an explanatory diagram of an embodiment of an inductively coupled plasma CVD apparatus according to the present invention; FIG. 2A is used as shown in FIG. Antenna structure diagram of inductively-coupled plasma CVD device; Department • t Printed by the Central Bureau of Quasi-Bureau Consumer Cooperative Co., Ltd. (Please read the note f on the back before filling out this page) Figure 2B is shown in Figure 1 The antenna structure diagram of another modified example of the inductive coupling plasma cvd device; Figures 38 and 8 are cross-sectional views of an inverted staggered amorphous silicon thin film transistor manufactured according to an embodiment of the present invention; A cross-sectional view of an academically-developed amorphous silicon thin film transistor manufactured according to other embodiments of the present invention;, This paper size is suitable for financial and family standards ^ V. Description of the invention (printed by A7 B7 of the Zhengong Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs FIG. 4 is a FT-IR characteristic curve of an amorphous silicon thin film manufactured according to an embodiment of the present invention; FIG. 5 is a conductivity characteristic curve of an amorphous silicon thin film manufactured according to an embodiment of the present invention; The picture shows Eben An optical band gap characteristic curve of an amorphous silicon thin film manufactured according to an embodiment of the present invention; FIG. 7 is a graph of light absorption characteristics of an amorphous silicon thin film manufactured according to an embodiment of the present invention; The conductivity characteristic curve of the n-type amorphous silicon thin film manufactured in one embodiment of the invention; FIG. 9 is the full-scale half value of the crystallinity and Raman peak of the finely crystalline silicon thin film manufactured in one embodiment of the invention; full-width FWHM); Figure 10 is a conductivity characteristic curve of an n-type fine crystalline silicon thin film manufactured according to the present invention-Example; 1 Figure 11 is a characteristic curve according to the present invention-Example The fr_ir characteristic curve diagram of the manufacture of nitrided thin film; flow # thin Lai Lai Cai film thin film ^ ^ Yiqu r /; EcvD method of the amorphous film thin film electricity = 13B picture shows the inductor according to the present invention. Coupling type Output characteristic curve of plasma-shaped amorphous sand thin film transistor; m scales are applicable in manufacturing (锖 Please read the note on the back before filling this page)

V. Description of the invention () Paste _ 第 = 依 _r 电-/: 二 _ 形 _ 电 第 ISA Figure is the characteristic curve diagram of the electric field effect mobility according to the ship's formula____; and Figure 15B of the paraelectric crystal In accordance with the present invention—implemented manufacturing—Jingweng thin film transistor electric field effect mobility characteristic curve. Page < Comparison of component symbols and names in the illustration > 11. Vacuum reaction chamber 12. Cylindrical measuring plate 14. Base plate 16. Silicon layer 20. Support table 24, 25. Gas supply tube 30. Insulating substrate-33 .Amorphous silicon pattern < Detailed description of the preferred embodiment > Printed by the Central Consumer Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 13. Dielectric window Π. Antenna 22. Exhaust passages 24A, 25A, ring section 31 Gate 35. Source / Drain 18. Matching box 23. Gas storage tank 24B, 25B. Nozzle hole 32. Gate insulation layer Figure 1 shows the inductively-coupled plasma CVD device manufactured according to the present invention. The plasma CVD apparatus 10 includes a vacuum chamber 丨 丨. The vacuum reaction chamber Π is formed by a cylindrical side plate 12, an upper plate 13, and a bottom plate 14. In order to maintain the closed state of the vacuum reaction chamber, O-Hng seals 15A and 15B are provided between the cylindrical measuring plate 12 and the upper plate 13 and between the cylindrical measuring plate 12 and the bottom plate 14, respectively. The upper plate 13 forms a high-frequency electric wave window of a quartz material. In addition to the quartz material (qUarz material), the material used for the dielectric solid 13 can also be used with _ scales applicable to the Chinese country ^ 7 ^) Ya 4 threats (210 > < 297 mm Ministry of Economic Affairs Central Government Standards Bureau staff consumer cooperatives printed A7- -------_ B7 V. Description of the invention ^) " '

A material that allows radio waves to pass through, such as ceramic insulating materials such as Al2O3, but does not allow infrared rays to pass through. In this embodiment, a selected film is deposited in the vacuum reaction chamber Π. In order to prevent oxygen or impurities from flowing into the vacuum reaction chamber 11 due to the dielectric window 13 being etched, the surface of the vacuum reaction chamber u of the dielectric window 13 is coated with Oxygen-free silicon layer 16. The oxygen-free silicon layer 16 is formed of an amorphous silicon layer, and the amorphous silicon layer has a thickness of about 1000 A. In addition to amorphous silicon, a silicon nitride layer or a silicon carbide layer may be used. This point forms an important characteristic of this embodiment. ^ An antenna 17 is provided on the dielectric window 13 to receive RF power. The antenna should be a simple vortex (see H. Sugaietal. Jpn_j. Appl. Phys. 33, 2189, 1944 &Y; Horike etal J. Vac. Sci. Technol. A1 3 (3) m 801, 1995), in order to apply to a large area and excellent uniformity. In this embodiment, as shown in Figures 2A and 2B, in order to obtain a plasma density of ιιιι ~ 1012cm-3, it is suitable to use one of two vortex antennas-a kind of antenna 17 connected to a matching box (matching) Box) 18, and the matching box 18 is connected to an RF power source 19. The support 20 penetrates the central portion of the bottom plate 14 and a workpiece 20 such as a broken glass substrate 21 is placed on the support 20. An exhaust passage 22 is provided on one side of the bottom plate 14. The stand 20 and the bottom plate 14 should be electrically insulated. The support 20 is designed to retain the necessary cooling and heating energy for plasma deposition. Reactant gas is supplied by more than one winter gas supply tube in the vacuum reaction chamber 11. In this embodiment, two gas sources are used. The paper size is applicable to China National Standard (CNS) A4 (210X297) (Mm) (please read the note on the back before filling in this page)-Order

Printed by the Zhengong Consumer Cooperative of the Central Bureau of Quasi-Ministry of Economic Affairs = (ga ^ supply tube) 24, 25. In addition, in order to supply two or more types of tiles, a plurality of gas tanks 23 are connected to the gas supply pipe 24, Μ. The gas supply pipes 24 and 25 include a ring-shaped annular portion 24A for supplying gas to a large area, and the 25A is located at the center of the vacuum reaction chamber. Therefore, the ring portion can be turned to supply gas to the king. Also, a plurality of nozzle holes 24B, 25B are formed around the ring-shaped portions 24A, 25A at intervals of-^. Next, a method for sinking a selected film from a reactive gas inductively coupled plasma on a substrate will be described. First, a vacuum chemical deposition chamber must be prepared, at least a part of which includes a dielectric window 13 (dielectnc shield). The reaction chamber of the dielectric 13 has a silicon film 16 containing no oxygen on its inner surface, and an antenna 17 is disposed adjacent to The dielectric window can accept RF power. The antenna 17 is preferably formed in a vortex shape so as to form a high-density and uniform plasma. This stage should be the main purpose of the present invention. Secondly, the object to be processed, such as a broken glass substrate 21 On the support 20 in the reaction chamber 丨 丨, and then exhaust the reaction chamber 丨 丨 to a vacuum state of 〇e ~ 10_7 Torr by the exhaust mechanism 22. Then, the current is supplied to the support 20 and heated to 300 ~ 500 ° ° The reaction gas is supplied to the reaction chamber which is kept under vacuum. The preselected reaction gas is supplied from the gas storage tank 23 to the gas supply pipes 24, 25. The gas supplied to the gas supply pipe is formed in the ring portions 24A, 25A. Most of the nozzle holes 24B and 25B are supplied in the reaction chamber. The composition of the reaction gas should be 10 (please read the precautions on the back before filling this page) * The size of the paper is applicable to the Chinese national standard (CNS) ) A4 specification (2 丨 〇 < 297 mm) Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs «. A7 —-_______ B7_ 5. Description of the invention (~ Can be deposited from dielectric, metal and semiconductor compositions The selected film. The antenna is supplied with power from the RF power source 19 through the matching box 18. 7. In order to form a film on the substrate 21, an inductively coupled plasma is formed in the reaction chamber. At this time, the supplied gas forms a uniform and high density. For example, an inductive coupling plasma with a peak ion density of ^ 〇11 ~ 1012αη · 3. Mouth 1. An amorphous dream film is deposited on a support in a vacuum reaction chamber to support the workpiece. SiHU gas is supplied to the reaction chamber through the gas injection port of the gas supply mechanism provided in the vacuum reaction chamber while the workpiece is supported under vacuum. Sim is used in this example. ShH6, SiH2Ch / H2, etc. can also be used in addition to SiH4. As the source gas for Si. At this time, the gas flow rate of SiRt is 0-5 SCCM, and the gas pressure is 70m Ton ·. A 4 (^ ¥ 1 ^ electric power is applied to the vortex antenna adjacent to the chamber, so that the reaction Generate electricity indoors Coupling type plasma. The substrate temperature is raised to 250 ° C, and then an amorphous silicon film is deposited on the workpiece. 2. The silicon nitride film is deposited on a support in a vacuum reaction chamber to support the substrate. Supported under vacuum In the state of the substrate, gas such as SiHU / NHs / He is supplied into the reaction chamber through the gas injection port of the gas supply mechanism provided in the vacuum reaction chamber. At this time, the gas flow is SiH40.5 ~ 2SCCM, NH3 10 ~ 60SCCM, HelO ~ 100SCCM , And the SiH4 / NH3 flow rate ratio (SiH4 / NH3 fl0w rate ratio) is 1: 10 ~ 1: 30, and the total gas pressure is 500 ~ 800m Torr. The paper size of ~ 20 watts applied to the full-length antenna adjacent to the room is applicable to China National Standards (CNS) 8-4 specifications (210 × 297 mm) (Please read the note of 1r. Page) «Hem (· an m ·

'-Order-„------„ ---------- „----:: I Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention ( ) RF power generates an inductively-coupled plasma in the reaction chamber. The substrate temperature is raised to 200 ~ 300 ° C. Secondly, a silicon nitride film is deposited on the substrate. 3. The deposition of fine crystal grain film in the vacuum reaction chamber The substrate is supported on the stand, and the substrate is supported under vacuum through the gas injection port of the gas supply mechanism provided in the vacuum reaction chamber to supply gas such as SiiWH ^ He to the reaction chamber. At this time, the gas flow is SiH4 0.5 ~ 2SCCM 'H2 5 ~ 100SCCM, HelO ~ 100 SCCM 'and the SiHU / Hb flow rate ratio (SilWHb flow rate ratio) is 1: 10 ~ 1: 50, and the total gas pressure is 200 ~ 500m

Torr. An electric force of 10 to 120 volts is applied to a full-scale sky chain adjacent to the chamber, so that an induction-coupled plasma is generated in the reaction chamber. Raise the substrate temperature to 200 ~ 300 ° C. Secondly, a thin crystal grain film is deposited on the substrate. 4. Manufacturing of amorphous silicon thin film transistor Next, a method of manufacturing an inverted staggered amorphous silicon thin film transistor having a structure shown in FIG. 3A will be described. First, a gate 31 made of a metal pattern such as Cr, A1 is formed on the insulating substrate 30. A gate insulating layer 32 of a nitride film is then formed on the entire surface of the structure. The thickness of the gate insulation layer is 3000 ^^ The deposition conditions of the gate insulation layer are gas flow: SiH4 is 0.5SCCM, NH3 is 25SCCM, He is 70SCCM 'The substrate temperature is 300 ° C, the RF power is 40W, and the gas pressure is 580m Torr 0 forms a hydrogenated amorphous silicon (a_si: Η) pattern 33 on the gate insulating layer 32 as a channel or an active layer. At this time, the deposition conditions of the amorphous silicon pattern $ 12, the paper size, the general Chinese national standard (CNS) M specifications (2 丨 〇 > < 297 public attack) (Please read the note on the back before filling in this page ) Γ A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention () Gas flow S1H4 0.5SCCM, substrate temperature 250 ° C, RF power 40W, gas pressure 430m Torr. A source / exhaust wave 35 in contact with the active layer is formed on both sides of the Dunhua amorphous silicon pattern 33, and an ohmic contact layer 34 is formed between the a_Si: H active layer 33 pattern and the source / drain 35. In order to improve the ohmic characteristics, the ohmic contact layer 34 is formed of n + a_si: H or η + μ c-Si doped with n-type impurities at a high concentration. The deposition conditions of the ohmic contact layer are: gas flow rate 8 out 4 0.5SCCM ′ PH3 0.015SCCM, He 50SCCM, substrate temperature 250 C ′ RF power 40W, gas pressure 43.0m Torr. Next, a method for manufacturing another inverted staggered amorphous silicon thin film transistor having a structure shown in FIG. 3B will be described. / After depositing Cr, A1 and other metals on the insulating substrate 30 as the gate electrical transport 31, an amorphous silicon layer 22 is deposited. This silicon layer 22 is a silicon nitride film of the gate insulating layer 32 and a t / fb hybrid. The layer depends. Then, in order to transfer the contact, y is formed into η amorphous or n + fine crystalline stone 36, and then it is manufactured using ^ as the source / drain electrode 35. In order to increase the effect of mass production, a laminated structure such as SiO2 / SiN or AhOs / SiN can be used instead of the gate insulation layer 32. ; Amorphous is usually used as the active layer% in a-Si: HTET, and the amorphous characteristic of f determines the characteristics of TFT. Most of such amorphous silicon is currently manufactured using PECVD equipment. In the following, the results of the electrical and optical physical properties of the amorphous silicon thin film, the silicon nitride thin film ', and the amorphous material produced in accordance with this embodiment are sequentially described in FIGS. 4 to 15B. , 13 This paper is applicable to the Chinese National Standard (cns) Cong Lin (2⑴ 乂 加 公 著-L_________; __, -_____ Γ ϋι-λ-ΙΙ— ι ^ ϋ I nn In 1 · I ml itmw --- ^ (please First read the note ^ 'on the back of the feed and then fill out this page) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 -------------- B7 V. Description of Invention ()' " -First explain the amorphous dream film. Figure 4 shows the FT-IR characteristic (Fourier transform infrared characteristic) curve of the amorphous dream film manufactured according to this embodiment. Here, a non-crystalline dream film deposited on a single crystal wafer is taken. The crystal-shaped hair film was measured by bomomen 100F FT-IR ^ (n) (pourier transfomer infrarecj spectrocorpe) in the infrared region. Abdsorptincnceffic㈣ was investigated. It is known that the stretch mode of the Si-H bond appears at the wavenumber of 20000-1, and the bend mode of the SNH junction appears at the wavenumber of the wave. Therefore, it can be known that the amorphous silicon thin film formed according to this embodiment is a typical amorphous silicon thin film. The amorphous manufactured according to this embodiment The diaphragm 2 was not found in the supine 2 joint, but the hydrogen content in the film was calculated as 51% based on the calculation of 51-1111 (11 = 1, 2) joint. Figure 5 is a non-fabricated film manufactured according to this embodiment. A graph of the conductivity characteristics of the crystalline dream thin film. Here, aluminum is deposited as a coplanar electrode type by thermal deposition on a thin film deposited on a glass-breaking substrate of a ceramic 7059 circle, which is then attached to Keithley electrometer 617 囡 and KeitWey coffee were used to measure the temperature conductivity after being placed on the support of an inductively coupled plasma CVD device. The dark conductivity at room temperature calculated from the measurement results was 4_3X. Measurement results Calculate the photoconductivity under the condition of AM-1 (100mw / cm 2) 汴 11〇 ^^ 11- (111 (: 47) is 1.4 \ 10-5 卩 -1〇11-1 . And the activation energy of the electrical energy (activation energy of the electrical eopductivity) is based on the Chinese paper standard (CNS) A4 specifications (210X297 mm) * .I— (Please read the "$" on the back and then fill in the nest (This page)-Order A7 B7 Printed by the Consumers' Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs (). L.〇5ev. The light sensitivity of the amorphous silicon thin film deposited according to this embodiment is 3 × 106, which is enough to prove that the amorphous silicon material has excellent physical properties. Fig. 6 is a graph showing the optical band gap characteristics of an amorphous silicon thin film manufactured using the inductively coupled plasma cvd device of this embodiment. The light absorption coefficient α of a thin film deposited on a broken glass substrate of Corning 7059 [[] was measured using an infrared / visible light photometer (Spectrophotometer). The optical band gap was calculated from the measured light absorption coefficient according to the following formula. (ah) 1/2 = B (E —Eg0? *) where B is a constant representing the slope of the band, hl / is the photon energy of the incident light, a is the light absorption coefficient, and Egcpt is the optical band gap. As shown in Fig. 6, since the optical band gap has Ukv, it can be seen that the amorphous silicon thin film of this embodiment is a typical amorphous silicon thin film. Fig. 7 is a graph of light absorption characteristics of an amorphous silicon thin film manufactured according to this embodiment. For the range of light energy from 1.6ev to 1.8ev, the Urbach energy Eu with the slope of tail sand, such as 廿 tail, can be calculated by substituting the absorption coefficient a into the following formula, that is, ot = a 〇exp (hv / Eu) where a 〇 is a fixed number, h ν is light energy. The density Nd of the bonding state expressed by the following formula is

Nd = 1.9X1016J aex (hr) d (hK) 〇c ex = a — a 〇exp (hF / Eu) «« For the relationship, please refer to 乂 11 .. 乂 ^ & 1. ? 〖.1 > 1 ^, 26, L1818, 1987. 15 (Please read the note $ on the back first, and then write 1-8.

The Chinese National Standard (CNS) A4 specification of each drinker's office (210X297 mm) Printed by the Central Laboratories of the Ministry of Economic Affairs and Consumer Cooperatives V. Description of the invention () Urbach energy Eu with the amorphous dream film from the agency ^ The degree of state Nd is 58 mev and 7.43 × ⑽,... two. The amorphous rhenium film deposited according to the embodiment of the present invention is a good material, and the conductivity characteristic curve of the n-type amorphous deposited by the equipment of the embodiment of the present invention. The same method is applied to the measurement of the anterior heart-shaped fine crystalline diaphragm. The same method is applied to the η-type amorphous hair film deposited on the glass substrate. The dark conductivity and conductivity activation energy calculated from the measurement results at normal temperature are respectively ⑻ ^ 一 观 22 ~ ^ 是以 It is known that the η-type amorphous film deposited using the equipment of the embodiment of the present invention) The dream film is indeed Material with excellent penetration efficiency. Next, the finely crystalline silicon film will be described. FIG. 9 shows the crystallization degree and full-size half of Raman seattering of the finely crystalline silicon film deposited at the H2 / SiH4 ratio according to the inductively coupled plasma CVD method according to this embodiment. Value (Full-Width at Ha If Maximum [FW HM]). A Raman Spectroscopy was used to determine the crystallinity and full width half value of a finely crystalline silicon film deposited on a Corning 7059 round glass substrate. The size of the fine crystal particles was measured using a scanning electron microscope SEM. As a result, the size of the fine crystal grains was between 200A and 400A, and the degree of crystallization was between 70 and 73% as shown in FIG. 8. For this value, when considering the typical fine crystal grain size is 30. ~ 200A and the degree of crystallization is between 2% and 70% (refer to K. Nomoto et al. JPn · J. Appl. Phys. 29, this paper scale 逋Use Chinese national standard (CNS > A4 specification (2 丨 〇 > < 297 mm) {Zhuxian read the note on the back and fill in this ear] 1 ·· 1 »^ ϋ · ^^^ 1 · am * ml »nn a ^ l— • — ^ ϋ B7 V. Description of the Invention () L1372, 1990), it can be seen that the finely crystalline silicon film of this embodiment is a thin film with excellent characteristics. Figure 10 shows the film according to the present invention. The conductivity characteristic curve of the 0-type fine crystalline silicon film deposited in the example. On the η-type fine crystalline silicon film on Shen Ji # c〇rning 7059〇 glass substrate, a coplanar electrode was used by a thermal deposition method. Aluminum was deposited on the support of the vacuum device in a pattern, and the temperature conductivity was measured using Keithley electrometer 6Π circle and Keithley multimeter 195A circle. Dark conductivity and conductivity activation energy at room temperature calculated from the measurement results 17Ω-ι〇η -1 and 30mev respectively. It can be seen that η manufactured according to this embodiment The fine crystalline silicon material is a film with excellent doping efficiency. The silicon nitride film is described below. Figure 11 is the FT_IR # characteristic curve of the nitride nitride film manufactured according to the example. Here, a BOMEN100 circle The FT-IR spectrometer measures the absorptivity of a silicon nitride film deposited on a single-crystal silicon wafer with large conductivity in the infrared region. From the spectral results in the infrared region, it is known that at a wavenumber of 334 ° C-1 N ~ " H junctions appear in tensile mode, while Si-H junctions appear band mode at wavenumber 1150cm-i. Si-N junctions appear at wavenumber 840cm-i.

Therefore, it is learned that the silicon nitride film formed according to this embodiment belongs to a typical silicon nitride film. Fig. 12 is a current-voltage characteristic curve diagram of a silicon nitride film manufactured using the inductively coupled plasma cvd device manufactured according to this embodiment. After sinking a 1000-nano-meter silicon nitride thin film on a P-type silicon wafer with a resistivity of 10 to 15 Ω cm, aluminum with straight diameter and leg diameter was formed by thermal deposition to form a MIS paper. Applicable to the Chinese National Cricket (CNS) specification (21 × 297 mm) B7 V. Description of the invention () Creation. Measure this structure with Keithley electrometer 617 R (please read the note ^ on the back and fill in this y first) Subtraction: The voltage characteristic result, as shown in Figure 8, its breaking voltage is 7, please, the current density is 1MV / cm At about lOA-w / cm-2. Finally, the amorphous thin film transistor will be described. Fig. 13A is a graph showing the output characteristics of an amorphous lithography thin film transistor manufactured by a conventional method. Fig. 13B is a discharge current-thunder characteristic curve of an amorphous silicon thin film transistor having the structure of Fig. 3A manufactured according to an embodiment of the present invention. As shown in the figure, the W / L of the TFT (here W is the width of the FTF and L is the length of the TFT) is 60 μπι / 30 μΓη, and when the gate voltage is 20v, the saturation discharge current of the TFT made by PECVD is 丨. 3 χ 1 (HA, on the other hand, the saturation drain current of TFTs fabricated with ICP-CVD equipment is 2 0χ 10-6a. It is known that n + amorphous silicon layers fabricated with ICP-CVD equipment have good TFT contact layers It also shows that the magnitude of the change in the discharge current caused by the increase in the gate voltage is also large. Figure 14A shows the discharge current of a non-crystalline silicon thin-film transistor manufactured by conventional PECVD and has the same structure as that shown in Figures 38 and 8. The characteristic curve chart. Figure 14B shows the characteristics of the discharge current and the gate voltage of the amorphous silicon thin film transistor printed by the Central Ministry of Economic Affairs, the Central Bureau of Standards and Industry, and Shellfish Consumer Cooperative, which are manufactured according to the embodiment of the present invention. Graph. As shown in the transfer curve, the cut-off current of the a_SiTFT produced by ICP-CVD according to this embodiment is slightly smaller than that of the amorphous silicon TFT produced by conventional PECVD. * Table Paper size applies to Chinese National Standard (CNS) A4 (210X29 7mm) A7 B7 printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention () The second-lowest hydrogenated amorphous thin film transistor manufactured in accordance with this example: Subthreshold slop was determined It is about 0 3v / dec, and ON / OFF ratio> 10. Fig. 1SA shows the electric field effect mobility characteristic curve of the surface-shaped bridging film transistor relied on by the wealth transfer method. Fig. 1SB shows the implementation according to this The characteristic curve of the electric field effect mobility (fidd effect mobility) of the amorphous silicon thin film transistor manufactured by the example. Formula (Id) i / 2 = {pFE (W / L) ci (VG_Vm) VD} 1/2 The low-limit voltage VTH is about 436V, and the electric field effect mobility (μρΕ) is about 0 wrist 2 / VS. On the other hand, the low-limit voltage and electric field effect mobility of the TFT manufactured by the same project using conventional pecvd equipment are 6V, 〇〇〇η 2 / vs. The two comparisons (refer to Figure 1SA). It can be seen that the TFT produced by ICP CVD method has better characteristics. From this example, it can be seen that the inductor-type plasma CVD according to the present invention Method, an oxygen-free silicon layer is formed on the surface of a dielectric window, and connected by a gas supply mechanism The annular part is arranged in the central part of the reaction chamber. Most gas injection ports are formed at a certain interval around the annular part, and the spiral antenna uniformly distributed on the surface of the dielectric window can generate a high density and uniform plasma inside the reaction chamber. Therefore, a uniform amorphous dream film with excellent film characteristics in terms of light sensitivity, conductivity, activation energy, and optical band gap can be obtained. It can also obtain breakdown voltage and excellent film characteristics in terms of current density. The nitrided hair film can even obtain a uniform Shi Xi film with fine crystal grains. In particular, it is possible to obtain the paper standard in terms of electric field effect mobility and low voltage. General Ningguo Standard (CNS) A4 specification (21 () > &297; by the public) (Fill in this page again)

A8 B8 C8 D8 V. Description of the invention (excellent electrical extra-fine and uniformly thin film transistors containing amorphous materials, so high-quality TFT-LCD can be manufactured. It is easy to see that those who are familiar with the film of the present invention As for the artist, you can make various modifications and changes to the content of the present invention without departing from the spirit of the invention. Therefore, the scope of the patent for the invention in the appendix should include possible modifications and changes. '(Please first " Read the note at the back of the page and fill in this page.) • Order · The printed paper size of the Central Standards Bureau of the Ministry of Economic Affairs and Industrial Cooperatives is applicable to China's national standard (CNS > A4 size (210X297 mm)

Claims (1)

Patent application scope Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative 1. An inductively coupled plasma chemical vapor deposition method for depositing a selected film on a substrate from an inductively coupled plasma, the method includes the steps of providing a A vacuum reaction chamber that includes an internal portion enclosed by a dielectric window 'and the dielectric window has an amorphous silicon layer on its inner surface, and-the antenna is located outside the reaction chamber and adjacent to the dielectric window, the dielectric can be added Apply RF power; 'Place the substrate on the reaction chamber support; release the air in the vacuum reaction chamber to make it vacuum; introduce reaction gas into the vacuum reaction chamber with a preset pressure; and supply RF power to the antenna to The vacuum reaction chamber forms an inductively coupled plasma from the reaction gas to deposit a thin film. … 2. The inductively coupled plasma chemical vapor deposition method described in item 1 of the scope of the patent application, wherein the dielectric window is made of A1203 material. 3. The inductively-coupled plasma chemical vapor deposition method according to item 1 of the scope of the patent application, wherein the reactive gas is composed of a dielectric, i, and a silicon film selected by a semiconductor. Meng 4. The electro-axial coupling type silkification # deposition method as described in item i of the patent application scope, which is characterized by the fact that the reaction gas = milk composition can deposit Shixi film. Wu Wuzhi 5. The electro-hybrid type · deposition method as described in item i of the scope of the patent application 'is characterized in that it is a reactive gas and has a composition capable of depositing silicon nitride films. 、 俾 八 / 、 有的 (Please read the notes on the back before filling in this ear}-Binding-Thread • V 21 This paper is suitable for patent application ϋ Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative 1. An inductively coupled plasma chemical vapor deposition method for depositing a selected film on a substrate from an inductively coupled plasma, the method includes the steps of providing a A vacuum reaction chamber that includes an internal portion enclosed by a dielectric window 'and the dielectric window has an amorphous silicon layer on its inner surface, and-the antenna is located outside the reaction chamber and adjacent to the dielectric window, the dielectric can be added Apply RF power; 'Place the substrate on the reaction chamber support; release the air in the vacuum reaction chamber to make it vacuum; introduce reaction gas into the vacuum reaction chamber with a preset pressure; and supply RF power to the antenna to The vacuum reaction chamber forms an inductively coupled plasma from the reaction gas to deposit a thin film. … 2. The inductively coupled plasma chemical vapor deposition method described in item 1 of the scope of the patent application, wherein the dielectric window is made of A1203 material. 3. The inductively-coupled plasma chemical vapor deposition method according to item 1 of the scope of the patent application, wherein the reactive gas is composed of a dielectric, i, and a silicon film selected by a semiconductor. Meng 4. The electro-axial coupling type silkification # deposition method as described in item i of the patent application scope, which is characterized by the fact that the reaction gas = milk composition can deposit Shixi film. Wu Wuzhi 5. The electro-hybrid type · deposition method as described in item i of the scope of the patent application 'is characterized in that it is a reactive gas and has a composition capable of depositing silicon nitride films. 、 俾 八 / 、 有 之 (please read the notes on the back before filling in this ear)-Binding — Thread • V 21 This paper is suitable for New Zealand ϋ A8 BS C8 D8 7. Printed by Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 6. Scope of patent application 6. An amorphous silicon thin film formed by an inductively coupled plasma on a supporting substrate structure is formed by a method including the following steps: Provide-a vacuum reaction chamber 'which contains-an internal part is dielectric The window is closed, and the dielectric window has an amorphous silicon layer on its inner surface, and an antenna is disposed outside the reaction chamber and is adjacent to the dielectric window. The electricity can be added with RF power. It is in a vacuum state; the reaction gas is introduced into the vacuum reaction chamber with a preset pressure; and the RFf force is supplied to the antenna, such as in the vacuum reaction, an inductively coupled plasma is formed from the reaction gas to deposit a thin film. ~ Rushen (6) The amorphous thin film according to item 6, characterized in that the amorphous stone film has a dark conductivity of 43 × 10, cm ° at normal temperature 8. The amorphous property according to item 6 is characterized in that the amorphous Shixi film has a photoconductivity of 1.4 × 10′5S / cm under the condition of dove-1 (1000mv / cm2). 9_. The amorphous silicon thin film as described in item 6 of the target patent of Shenyang Patent, which is characterized in that the light sensitivity of the amorphous Shixi film is about 106%. The amorphous silicon thin film described in the above item is characterized in that the optical band gap of the M-Japanese-shaped thin film is USev. 11 The fine crystals formed by dimerization on the supporting substrate structure are characterized by the fine crystals described herein. The shape of the membrane has a grain size of 200 ~ 300A, and a degree of crystallinity of 70 ~ 73%. The m-size scale is suitable for towels,-»Iί, · ^ 丨 裂 f Order ----- 、 .Line one ^ —1 (Please read the notes on the back ^^ Fill in this ear first ”22 Printed by the ABCD Employee Consumer Cooperative of the Ministry of Economic Affairs. 6. Scope of patent application ~~ 12. Type of inductive coupling plasma The silicon nitride thin film formed on the supporting substrate structure is formed according to a method including the following steps: A vacuum reaction chamber is provided, which includes a Parts are closed by a dielectric window, which has an amorphous silicon layer on its inner surface, and an antenna is arranged outside the reaction chamber and is adjacent to the dielectric window. The dielectric can be added with RF power; The air in the vacuum reaction chamber is brought into a vacuum state; the reaction gas is introduced into the vacuum reaction chamber with a preset pressure; and the RF power is supplied to the antenna to form an inductive light-weight plasma from the reaction gas in the vacuum reaction chamber. Those who deposit a thin film. 13. The nitrided thin film according to item 12 of the scope of patent application, wherein the silicon nitride thin film has a destruction voltage of 7 MV and a current density of ^ lMV / cm is 10-1 〇A / cm2. Μ. —An amorphous silicon thin film transistor containing an amorphous silicon thin film, characterized in that the amorphous silicon thin film is formed by an inductively coupled plasma according to the method of the following steps: .. provide- The vacuum reaction chamber contains an internal portion that is enclosed by a dielectric window, and the 5H dielectric window has an amorphous silicon layer on its inner surface, and the antenna is placed outside the reaction chamber and adjacent to the dielectric window. Add RF power; release the air in the vacuum reaction chamber to make it in a vacuum state; introduce reactive gas at a preset pressure and supply fine electric power to the antenna at the vacuum reverse bank, so as to form an inductive coupling pad plasma at the vacuum = 2 gas Film deposition. One paper size is applicable to China National Standard Soldier (CNS) Α4 (210X297 mm) --------- Γ Pack -------- ^ Order —----- L ·. (Please (Read the precautions on the back before filling out this page) 16. A8 B8 C8 D8 Application for patent scope 15.-Amorphous film with ohmic contact layer The n-type contact layer is an n + -type amorphous stone film formed by an inductive coupling method: a vacuum reaction chamber is provided according to the following steps, which includes an internal part closed, and the dielectric window has The amorphous stone layer is configured with a sealed antenna in the reaction material. It can be adjacent to the dielectric t. RF power can be added; the dielectric releases the real response chamber _ air to make it vacuum-like. Pressure introduces reactive gas into the vacuum chamber; and supplies RF power to the antenna to form an inductive-type plasma from the gas in the vacuum reaction to deposit a thin film. ~-An amorphous dream thin film transistor with an ohmic contact layer, wherein the ohmic contact layer is an n + type fine crystalline silicon film formed by an electric flip-flop plasma according to the following two steps: ' Provide-Vacuum reaction chamber 'which contains- the internal part is closed by a dielectric window, and the dielectric window has an amorphous silicon layer on its inner surface, and two antennas are arranged outside the reaction chamber and adjacent to the dielectric window, the dielectric : RF power can be added; "The air in the vacuum reaction chamber is released into a vacuum state; reaction gas is introduced into the vacuum reaction chamber at a preset pressure; and RF power is supplied to the antenna so that it can be removed from the vacuum reaction chamber. Those who react to gas to form an inductively coupled plasma to deposit a thin film. ~ 24-~ ____ This paper is scaled to a country of _ township (⑽) correction level (2107297 mm) '---------- ---- Order ------ Mi C, please read the notes on the back before writing this page] ABCD printed by Shelley Consumer Cooperative of Central Standards Bureau of Ministry of Economic Affairs 6. Scope of patent application: 17. Amorphous silicon thin film transistor with ohmic contact layer It is characterized in that the ohmic contact layer is formed by an inductively-coupled plasma according to a method including the following steps: A vacuum reaction chamber is provided, which includes an internal part closed by a dielectric window, and the dielectric window has an amorphous shape. The Shi Xi layer is on its inner surface, and an antenna is arranged outside the reaction chamber and adjacent to the dielectric window. The dielectric can be added with RF power; the air in the vacuum reaction chamber is released to make it vacuum; with a preset pressure Introducing reactive gas into a vacuum reaction chamber; and supplying RF power to an antenna to form an inductively coupled plasma from the reactive gas in the vacuum reaction chamber to deposit a thin film. 18. An amorphous form containing an argon-shaped amorphous silicon film A silicon thin film transistor is formed by an inductively coupled plasma: A vacuum reaction chamber is provided, which includes an internal portion closed by a dielectric window, and the dielectric window has an amorphous silicon layer on its inner surface, and one day The wires are arranged outside the reaction chamber and adjacent to the dielectric window. This dielectric can be added with RF power; the air in the vacuum reaction chamber is released so that It is in a vacuum state; printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) to introduce reaction gas into the vacuum reaction chamber with a preset pressure; and supply RF power to the antenna 19. An inductive coupling plasma is formed from the reaction gas in the vacuum reaction chamber to deposit a thin film. 19. The amorphous silicon thin film transistor described in item 18 of the scope of patent application, characterized in that the The saturation value of the discharge current is 2.0x 10_6A. 25 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) ABCD VI. Application for patent scope 20. The amorphous silicon described in item 18 of the scope of patent application The thin film transistor is characterized in that the electric field effect mobility of the thin film transistor is 0.80 cm2 / Vs, and its low limit voltage is about 4.6V. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs This paper applies the Chinese National Standard (CNS) Λ4 specification (210X297 mm)