TW412663B - Positive-working photoresist composition - Google Patents

Positive-working photoresist composition Download PDF

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Publication number
TW412663B
TW412663B TW085106741A TW85106741A TW412663B TW 412663 B TW412663 B TW 412663B TW 085106741 A TW085106741 A TW 085106741A TW 85106741 A TW85106741 A TW 85106741A TW 412663 B TW412663 B TW 412663B
Authority
TW
Taiwan
Prior art keywords
acid
actinic rays
pattern
positive
photoresist composition
Prior art date
Application number
TW085106741A
Other languages
English (en)
Inventor
Akiyoshi Yamazaki
Yoshika Sakai
Kazufumi Sato
Kazuyuki Nitta
Toshimasa Nakayama
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of TW412663B publication Critical patent/TW412663B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

412663 A8 B8 C8 D8 六、申請專利範圍 Ο 3·如申請專利範圍第1項之化學敏化型正型作用之 光阻組合物，其中成分（b )係爲下列的組合： 第一種基於聚（羥苯乙烯）之樹脂，其係一種聚（羥 苯乙烯）樹脂，此聚（羥苯乙烯）樹脂中1 〇至6 0%的 羥基之氫原子被第三丁氧羰基所取代；及 第二種基於聚（羥苯乙烯）之樹脂，其係一種聚（羥 苯乙烯）樹脂，此聚（羥苯乙烯）樹脂中1 〇至6 〇%的 羥基之氫原子被烷氧烷基所取代，其之烷氧基及烷基各具 有1至4個碳原子； 重量比例範圍爲10 : 90至70 ·· 30。 4. 如申請專利範圍第1項之化學敏化型正型作用之 光阻組合物，其中當作成分（c)的胺化合物係選自：脂 族胺化合物、芳族胺化合物及雜環胺化合物。 5. 如申請專利範圍第4項之化學敏化型正型作用之 光阻組合物，其中當作成分（c )的胺化合物係脂族胺化 合物。 6·如申請專利範圍第5項之化學敏化型正型作用之 光阻組合物，其中該脂族胺爲三乙基胺。 7 .如申請專利範圍第1項之化學敏化型.正型作用之 光阻組合物，其中當作成分（d )的羧酸化合物係芳族羧 酸。 8 .如申請專利範圍第7項之化學敏化型正型作用之 光阻組合物，其中芳族羧酸係柳酸。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -2 - 412663 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 -、申請專利範圍 9.如申請專利範圍第1項之化學敏化型正型作用之 光阻組合物，其中成分（d )的用量範圍以重量計係爲成 分（c)用量的2至20倍。 Μ氏張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -3 - (請先聞讀背面之注意事項再填寫本頁)
TW085106741A 1995-06-15 1996-06-05 Positive-working photoresist composition TW412663B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7172899A JP3046225B2 (ja) 1995-06-15 1995-06-15 ポジ型レジスト膜形成用塗布液

Publications (1)

Publication Number Publication Date
TW412663B true TW412663B (en) 2000-11-21

Family

ID=15950407

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085106741A TW412663B (en) 1995-06-15 1996-06-05 Positive-working photoresist composition

Country Status (6)

Country Link
US (1) US5948589A (zh)
EP (1) EP0749046B1 (zh)
JP (1) JP3046225B2 (zh)
KR (1) KR100240184B1 (zh)
DE (1) DE69608167T2 (zh)
TW (1) TW412663B (zh)

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TW546540B (en) * 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
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JP2002091003A (ja) * 2000-09-19 2002-03-27 Tokyo Ohka Kogyo Co Ltd 薄膜形成用ポジ型レジスト組成物及びそれを用いた感光材料
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US6743563B2 (en) * 2001-08-15 2004-06-01 Shipley Company, L.L.C. Photoresist compositions
JP4053402B2 (ja) * 2002-10-23 2008-02-27 東京応化工業株式会社 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
KR100813458B1 (ko) 2003-05-20 2008-03-13 도오꾜오까고오교 가부시끼가이샤 화학증폭형 포지티브형 포토레지스트 조성물 및 레지스트패턴형성방법
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TWI556958B (zh) 2010-09-14 2016-11-11 東京應化工業股份有限公司 基質劑及含嵌段共聚物之層的圖型形成方法
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KR102261808B1 (ko) 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
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Also Published As

Publication number Publication date
KR100240184B1 (ko) 2000-01-15
DE69608167D1 (de) 2000-06-15
EP0749046A1 (en) 1996-12-18
JPH096001A (ja) 1997-01-10
DE69608167T2 (de) 2001-01-11
EP0749046B1 (en) 2000-05-10
JP3046225B2 (ja) 2000-05-29
KR970002471A (ko) 1997-01-24
US5948589A (en) 1999-09-07

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