TW396640B - Opto-electronic component and its production method - Google Patents
Opto-electronic component and its production method Download PDFInfo
- Publication number
- TW396640B TW396640B TW087117259A TW87117259A TW396640B TW 396640 B TW396640 B TW 396640B TW 087117259 A TW087117259 A TW 087117259A TW 87117259 A TW87117259 A TW 87117259A TW 396640 B TW396640 B TW 396640B
- Authority
- TW
- Taiwan
- Prior art keywords
- base
- thin layer
- module
- semiconductor
- item
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims abstract description 38
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 16
- 229920003023 plastic Polymers 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 20
- 230000002079 cooperative effect Effects 0.000 claims 2
- 229910052746 lanthanum Inorganic materials 0.000 claims 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 2
- 238000005234 chemical deposition Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 235000015067 sauces Nutrition 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 238000010329 laser etching Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- 230000000873 masking effect Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 235000009470 Theobroma cacao Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 244000240602 cacao Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Electroplating Methods And Accessories (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19746893A DE19746893B4 (de) | 1997-10-23 | 1997-10-23 | Optoelektronisches Bauelement mit Wärmesenke im Sockelteil und Verfahren zur Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
TW396640B true TW396640B (en) | 2000-07-01 |
Family
ID=7846434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087117259A TW396640B (en) | 1997-10-23 | 1998-10-19 | Opto-electronic component and its production method |
Country Status (6)
Country | Link |
---|---|
US (1) | US6645783B1 (de) |
EP (3) | EP2259349B1 (de) |
JP (1) | JP3069082B2 (de) |
CN (2) | CN1166007C (de) |
DE (1) | DE19746893B4 (de) |
TW (1) | TW396640B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI409915B (zh) * | 2009-04-21 | 2013-09-21 | The bearing structure of electronic component and its preparation method |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19549818B4 (de) * | 1995-09-29 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiter-Bauelement |
DE19755734A1 (de) * | 1997-12-15 | 1999-06-24 | Siemens Ag | Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes |
DE19940319B4 (de) * | 1999-08-25 | 2004-10-14 | Osram Opto Semiconductors Gmbh | Verfahren zum spannungsarmen Aufsetzen einer Linse auf ein oberflächenmontierbares optoelektronisches Bauelement |
DE10023353A1 (de) | 2000-05-12 | 2001-11-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung |
DE10025774A1 (de) * | 2000-05-26 | 2001-12-06 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement mit Oberflächenmetallisierung |
DE10041686A1 (de) * | 2000-08-24 | 2002-03-14 | Osram Opto Semiconductors Gmbh | Bauelement mit einer Vielzahl von Lumineszenzdiodenchips |
US7012315B1 (en) * | 2000-11-01 | 2006-03-14 | Micron Technology, Inc. | Frame scale package using contact lines through the elements |
DE10117889A1 (de) * | 2001-04-10 | 2002-10-24 | Osram Opto Semiconductors Gmbh | Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung |
US6949771B2 (en) * | 2001-04-25 | 2005-09-27 | Agilent Technologies, Inc. | Light source |
JP2002368277A (ja) * | 2001-06-05 | 2002-12-20 | Rohm Co Ltd | チップ型半導体発光装置 |
DE10129785B4 (de) * | 2001-06-20 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
JP4064801B2 (ja) * | 2002-12-12 | 2008-03-19 | 新光電気工業株式会社 | 金属膜形成処理方法、半導体装置及び配線基板 |
JP3910144B2 (ja) * | 2003-01-06 | 2007-04-25 | シャープ株式会社 | 半導体発光装置およびその製造方法 |
TWI220577B (en) * | 2003-07-25 | 2004-08-21 | Epistar Corp | Light emitting device having composite substrate |
FR2862424B1 (fr) * | 2003-11-18 | 2006-10-20 | Valeo Electronique Sys Liaison | Dispositif de refroidissement d'un composant electrique et procede de fabrication de ce dispositif |
JP4393187B2 (ja) * | 2003-12-26 | 2010-01-06 | 日本オプネクスト株式会社 | 半導体光素子用チップキャリア、光モジュール、及び光送受信器 |
JP2006049442A (ja) * | 2004-08-02 | 2006-02-16 | Sharp Corp | 半導体発光装置およびその製造方法 |
US7476913B2 (en) * | 2004-08-10 | 2009-01-13 | Renesas Technology Corp. | Light emitting device having a mirror portion |
DE102004045950A1 (de) | 2004-09-22 | 2006-03-30 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102005034166A1 (de) * | 2005-07-21 | 2007-02-01 | Osram Opto Semiconductors Gmbh | Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, elektromagnetische Strahlung emittierendes Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements |
DE102005059524A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements |
DE202006020926U1 (de) | 2005-10-27 | 2011-02-10 | Kromberg & Schubert Gmbh & Co. Kg | Leuchte |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
US20080165257A1 (en) * | 2007-01-05 | 2008-07-10 | Micron Technology, Inc. | Configurable pixel array system and method |
DE102007021904A1 (de) * | 2007-02-28 | 2008-09-04 | Osram Opto Semiconductors Gmbh | Optoelektronische Vorrichtung mit Gehäusekörper |
US7812869B2 (en) * | 2007-05-11 | 2010-10-12 | Aptina Imaging Corporation | Configurable pixel array system and method |
DE102008005345A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Halbleiterbasiertes Bauelement, Aufnahme für ein halbleiterbasiertes Bauelement und Verfahren zur Herstellung eines halbleiterbasierten Bauelements |
US20100307799A1 (en) * | 2009-06-06 | 2010-12-09 | Chiang Cheng-Feng | Carrier Structure for Electronic Components and Fabrication Method of the same |
US8101962B2 (en) * | 2009-10-06 | 2012-01-24 | Kuang Hong Precision Co., Ltd. | Carrying structure of semiconductor |
DE102012107668A1 (de) | 2012-08-21 | 2014-03-20 | Epcos Ag | Bauelementanordnung |
DE102015105470A1 (de) * | 2015-04-10 | 2016-10-13 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1921124A1 (de) | 1968-04-30 | 1970-01-08 | Brunnschweiler S P A | Vorrichtung zur Einfuehrung von Luft in die Taschen von Trockenpartien der Papiermaschinen mit Trockensieben |
DE3113855A1 (de) * | 1981-04-06 | 1982-10-21 | Fritz Wittig Herstellung gedruckter Schaltungen, 8000 München | Verfahren zur herstellung von leiterplatten |
DE3128187A1 (de) * | 1981-07-16 | 1983-02-03 | Joachim 8068 Pfaffenhofen Sieg | Opto-elektronisches bauelement |
JPS612371A (ja) | 1984-06-14 | 1986-01-08 | Mitsubishi Electric Corp | 半導体受光装置 |
JPS6196778A (ja) * | 1984-10-17 | 1986-05-15 | Nec Corp | 光フアイバ結合用の発光装置 |
JP2574388B2 (ja) * | 1988-05-10 | 1997-01-22 | 松下電器産業株式会社 | 発光ダイオードおよびその電極の形成方法 |
JPH02154134A (ja) | 1988-12-06 | 1990-06-13 | Nec Corp | 半導体発光素子の発光パターン検査方法 |
JP2506223B2 (ja) | 1990-06-28 | 1996-06-12 | トリニティ工業株式会社 | 自動塗装装置 |
US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
JP3159841B2 (ja) * | 1993-08-26 | 2001-04-23 | ポリプラスチックス株式会社 | レーザーによる回路形成方法及び導電回路形成部品 |
JP3227295B2 (ja) * | 1993-12-28 | 2001-11-12 | 松下電工株式会社 | 発光ダイオードの製造方法 |
US5503286A (en) * | 1994-06-28 | 1996-04-02 | International Business Machines Corporation | Electroplated solder terminal |
US5877561A (en) | 1995-07-28 | 1999-03-02 | Lg Semicon Co., Ltd. | Plate and column type semiconductor package having heat sink |
JPH09293800A (ja) | 1996-04-24 | 1997-11-11 | Sankyo Kasei Co Ltd | 電気部品の表面実装用パッケージ体及びその製法 |
DE19621124A1 (de) * | 1996-05-24 | 1997-11-27 | Siemens Ag | Optoelektronischer Wandler und dessen Herstellungsverfahren |
-
1997
- 1997-10-23 DE DE19746893A patent/DE19746893B4/de not_active Expired - Lifetime
-
1998
- 1998-10-15 EP EP10179517.7A patent/EP2259349B1/de not_active Expired - Lifetime
- 1998-10-15 EP EP10179592.0A patent/EP2259350B1/de not_active Expired - Lifetime
- 1998-10-15 EP EP98119536.5A patent/EP0911886B1/de not_active Expired - Lifetime
- 1998-10-19 TW TW087117259A patent/TW396640B/zh not_active IP Right Cessation
- 1998-10-22 CN CNB981215408A patent/CN1166007C/zh not_active Expired - Lifetime
- 1998-10-22 CN CNB2003101239492A patent/CN1267977C/zh not_active Expired - Lifetime
- 1998-10-23 JP JP10302606A patent/JP3069082B2/ja not_active Expired - Lifetime
-
2000
- 2000-04-24 US US09/556,413 patent/US6645783B1/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI409915B (zh) * | 2009-04-21 | 2013-09-21 | The bearing structure of electronic component and its preparation method |
Also Published As
Publication number | Publication date |
---|---|
EP0911886A2 (de) | 1999-04-28 |
JPH11195794A (ja) | 1999-07-21 |
EP2259349B1 (de) | 2017-06-14 |
JP3069082B2 (ja) | 2000-07-24 |
CN1267977C (zh) | 2006-08-02 |
EP2259349A3 (de) | 2011-01-26 |
EP0911886A3 (de) | 2000-09-27 |
CN1166007C (zh) | 2004-09-08 |
EP2259350A2 (de) | 2010-12-08 |
US6645783B1 (en) | 2003-11-11 |
EP2259349A2 (de) | 2010-12-08 |
CN1216868A (zh) | 1999-05-19 |
EP2259350A3 (de) | 2011-01-26 |
EP0911886B1 (de) | 2017-06-07 |
DE19746893B4 (de) | 2005-09-01 |
CN1527371A (zh) | 2004-09-08 |
EP2259350B1 (de) | 2017-06-07 |
DE19746893A1 (de) | 1999-05-06 |
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