TW396466B - Semiconductor device and wire bonding method - Google Patents

Semiconductor device and wire bonding method Download PDF

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Publication number
TW396466B
TW396466B TW087116158A TW87116158A TW396466B TW 396466 B TW396466 B TW 396466B TW 087116158 A TW087116158 A TW 087116158A TW 87116158 A TW87116158 A TW 87116158A TW 396466 B TW396466 B TW 396466B
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Taiwan
Prior art keywords
horizontal line
capillary
point
line portion
wire
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TW087116158A
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English (en)
Inventor
Shinichi Nishiura
Toru Mochida
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Shinkawa Kk
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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    • H01L2224/8518—Translational movements
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    • H01L2224/85205—Ultrasonic bonding
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

A7 …----------------------.....—....................___^_ _ 五、發明説明（I ) "一"— 【發明之詳細說明】 【_明所屬之技術範疇】 本發明爲有關半導體裝置及第1接合點與第2接合點 之間用線連接之線接合方法，特別是有關線回路之形成方 法。 【習知技術】 +導體裝置之組裝步驟中的一步驟，如圖3所示，是 將安裝於導線框1上之半導體晶片2之銲墊2a(第1接合點 )與導線框1之線la(第2接合點)藉由線3連接之步驟。在 此情況，作爲線3之回路形狀，有如圖3(a)所示般線構成 台形形狀一部分之台形回路，如圖3(b)所示般線構成三角 形形狀一部分之三角回路。又，作爲此種線回路形成方法 ’可舉例如特公平5-60657號公報，特開平4-318943號公 報。 台形回路藉由圖4所示之步驟形成。如圖4(a)所示， H 3夾緊用之夾線具（圖中未表示)在打開狀態下，毛細管4 下'降’在第1接合點A將形成於線頂端之銲球接合後， 毛細管4上昇至B點後將線3抽出。其次如圖4(b)所示， 將毛細管4水平移動至與第2接合點G反方向之C點。一 般’將毛細管4朝向與第2接合點G之反方向移動稱之爲 反向動作。藉由此反向動作，線3在A點至C點成傾斜之 形狀’又線3藉由毛細管4在C點部分安上彎曲部(曲折 3a)。以後，此彎曲部稱爲曲折。在由a點至c點之步驟 抽出之線3，成爲圖3 (a)所示之頸高部31。 ___________________ __________3 ____ 木紙ίΑ尺度诚川屮㈨(厂ί 2 10X^97^^厂 ' "先間讀背而之'江念事項再"·寫本頁) 訂· 7%/* —5» 部 ίΐ- 13 ii')
Vi 社 卬 A7 B7 五、發明説明（>) 其次如圖4(C)所示，毛細管4上昇至D點後抽出線3 。然後i，如圖4(d)所示，毛細管4再次水平移動一點點至 與第2接合點G反方向之E點，亦即進行反向動作。藉此 ，線3由曲折3a至毛細管4位置E點成傾斜之形狀，並在 線3之部分安上曲折3b。藉由C點至E點之毛細管4移動 所抽出之線3 ^成爲圖3 (a)所不台形部長部分3 2。 其次如圖4 (e)所示，毛細管4上昇至F點後，將相 當於圖3 (a)所示的傾斜部33的線長之線3抽出。然後關 閉夾線具（圖中未表示）。夾線具關閉後，即使移動毛細管4 亦無法進行線3之抽出。其次如圖4 (f) (g)所示，毛細管 4圓弧運動或圓弧運動後下降而位於第2接合點G，在第2 接合點G將線3接合。 三角回路，藉由圖5所示之步驟形成。三角回路因不 形成台形回路之台形長部分32，不進行圖4 (d)所示第2 回反向動作。因此，圖4 (c) (d) (e)之步驟僅成爲圖5 (c) 之步驟。圖5 (a) (b)與圖4 (a) (b)爲相同步驟，圖5 (b) 所示第1回反向動作後，如圖5 (c)所示，毛細管4上昇 至F點後將線3抽出。然後，毛細管4進行與圖4 (f) (g) 相同之圖5 (d) (e)動作，在第2接合點將線3接合。 【發明欲解決之課題】 如前述，圖5所示之三角回路形成步驟，以比圖4所 示的台形回路形成步驟更單純的步驟即可形成，有能在短 時間進行回路形成之特徵。但是，在第1接合點A與第2 接合點G之高低差大的情況，或第1接合點A與半導體晶 木紙张尺度地力H.'WF'-m1;' (('NS)A4现指（21()Χ2〔)7公筇） (邻先閱讀背而之注意事項再填苟本頁) 線 A7 Η 7 ____________ 五、發明説明（j ) 片2之端部遠離的情況，用圖3 (b)所示三角回路之線形 狀回路i，線3會和半導體晶片2接觸。在此種情況’使其 成爲圖’3 (a)所示台形回路之線形狀回路’即可防止線3 與半導體晶片2之接觸。 圖4所示台形回路形成步驟中，圖4 (b)所示之第1 回反向動作，由於毛細管4在接近第1接合點A的高度位 置下進行，容易安上比較強之曲折3a。但，圖4 (d)所示 之第2回反向動作，由於毛細管4在遠離第1接合點A的 高度位置下進行，曲折3b不易安上且不安定。因此’由於 圖3 (a)所示曲折3b部分不安定、形狀保持力弱，曲折3b 部分會形成前低後高或前高後低。曲折3b部分之形狀保持 力一弱，藉由外部加壓就會發生線彎曲。例如藉由在朝第 2接合點G接合時之毛細管接觸、或因超音波振盪之衝擊 、或線3之振動、或模壓時之因模壓材料注入所致模壓材 料的流動等外力，就容易發生線彎曲。 但，即使在圖3 (a)所示之台形回路，如圖6所示， 回路之高度Η爲低回路，例如約250μπι以下，又長線長 ’例如第1接合點與第2接合點之距離L約5mm的情況， 會有下列問題。 圖7爲習知之台形回路形成步驟，圖7 (a) (b) (c) (d) (e)分別對應於圖4 (a) (b) (c) (d) (e)。如圖7 (a)所示， 毛細管4下降後，在第1接合點A接合形成於線頂端之銲 球後，毛細管4上昇至B點後將線3抽出。其次如圖7 (b) 所示，毛細管4水平移動至與第2接合點G反方向之C點 木紙張尺度询川屮㈨闩家榀彳（（.NS )糾現梢（210X297公及) " (iAt閱讀背而之·;ΐ.;έ事項再填-ΛΤ本頁 訂· 線 A7 B7 .. ' --.. - __ — III _ . _____________ 五、發明説明（Φ ) ，亦即進行反向動作。藉此，在線3部分安上曲折3a。 其^如圖7 (c)所示，毛細管4上昇至D1點後將線3 抽出。珠後，如圖7 (d)所示，毛細管4再次水平移動一 點點至與第2接合點G反方向之E1點，亦即進行反向動 作。藉此，在線3部分安上曲折3b。 可是，在如圖3 (a)所示線長短的情況，在圖4 (c) 之步驟中線3之抽出量短即可。之後，依圖4 (d)之反向 動作安上曲折3b (圖4 (e)參照）。但，在圖6所示導長線 長的情況，在圖7 (c)之步驟中線3之抽出量長。因此， 進行圖7 (d)之反向動作時，因線3之朝向第丨接合點a 方向之張力及線3之自重將抽出過多的線，在線3會產生 鼓起34，曲折3b之形狀會形成略圓形，或無法安上曲折 3b而形成陡峭的不彎曲狀。 如此般，即使是略圚形的曲折3 b，圖6所示半導體晶 片2之邊緣2b與第2接合點G之距離長的情況，例如500 時是沒問題。但，如1點鏈線所示，半導體晶片2之 邊緣2b與第2接合點G之距離短的情況，例如300 μ m時 ，線3會和邊緣2c接觸。 本發明之課題，係爲了解決台形回路之問題，而提供 具有安定的線回路形狀及高形狀保持力之線回路形狀之半 導體裝置及提供可形成該線回路形狀之線接合方法。 【解決問題之手段】 爲解決上述課題之本發明的半導體裝置之第1手段， 其特徵在於：將第1接合點與第2接合點間用線連接成之 ________ ____ ______.____6__；_... 木紙乐及度诚州屮（（，NS ) AW.US ( 210X297公赴） — (邻先間讀背而之注意事項再功，l>:t本頁) 訂. 線
I 經 部 it 消 ίί. 印 A7 B7 五、發明説明（（） 線回路形狀，係包含：從第1接合點幾乎垂直地向上方延 伸之頸高部，從該頸高部在橫方向前高後低地延伸之第1 橫線部，從該第1橫線部幾乎水平延伸之第2橫線部，從 第2橫線部前低後高地延伸之第3橫線部，以及從該第3 橫線部延伸至第2接合點之傾斜部。 爲解決上述課題之本發明的半導體裝置之第2手段’ 係在上述第1手段中，對頸高部與第1橫線部之連接部， 第1橫線部與第2橫線部之連接部’第2橫線部與第3橫 線部之連接部，第3橫線部與傾斜部之連接部，分別安上 曲折。 爲解決上述課題之本發明的線接合方法，係第1接合 點與第2接合點之間用線連接之線接合方法，其特徵在於 :係包含：在第1接合點將線連接之步驟；將毛細管上昇 一點點後，朝向與第2接合點相反方向稍微移動以進行第 1回反向動作的步驟；將毛細管上昇後，將毛細管向第2 接合點的方向移動之步驟；使毛細管上昇後，將毛細管向 第2接合點之方向移動，繼續使其上昇後，朝向與第2接 合點相反方向移動以進行第2回反向動作之步驟；以及， 使毛細管上昇後將線抽出，向第2接合點之方向移動，使 線連接在第2接合點之步驟。 【發明之實施形態】 將本發明之半導體裝置的一種實施形態，藉由圖2 (b) 說明。尙且，與圖4相同或相當部件或相當部分附加同一 符號說明。第1接合點A與第2接合點G連接成之線回路 —-—-___ ________________________________7_ 木紙張尺度诚川( (.NS ) Μ况枯（210X 297^#.) A7 B7 五、發明説明（G) 形狀，係由頸高部31、第1、第2、第3橫線部35、36、 37及傾j斜部38構成，在頸高部31與第1橫線部35之連 接部，第1橫線部35與第2橫線部36之連接部，第2橫 線部36與第3橫線部37之連接部’第3橫線部37與傾斜 部38之連接部安上各個曲折3a、3c、3d、3b。亦即是， 藉由在除習知例之曲折3a、3b之外另安上曲折3c ， 3d，即可使第1橫線部35形成前高後低之形狀，第2橫 線部36形成幾乎水平形狀，第3橫線部37形成前低後高 之形狀。 如此，藉由使頸高部之頂部與傾斜部38之頂部間成下 陷形狀，又藉由安上曲折3c ’ 3d ’即可形成形狀保持力 高之線回路形狀。又因第1橫線部35成前高後低，第2橫 線部36成幾乎水平，第3橫線部37成前低後高，在低回 路，又長線長的情況，且半導體晶片2之邊緣2c與第2 接合點G之距離短的情況’例如即使在300 μ m以下時， 線仍不致接觸半導體晶片2之邊緣2c。 藉由圖1與圖2說明爲得出如圖2 (b)所示之半導體 裝置之本發明的線接合方法。首先’進行與習知相同之圖 1 (a) (b)步驟。亦即是，如圖1 (a)所示，線3夾緊用之 夾線具（圖中未表示)在打開狀態下’毛細管4下降’在第1 接合點A接合形成於線頂端上之辑球後’毛細管4上昇至 B點後將線3抽出。其次如圖1 (b)所示’將毛細管4水 平移動至與第2接合點G反方向之C點以進行反向動作。 藉此，與習知相同的，在線3之部分安上曲折3a ，又由 — 一______8 _ (刘先間讀背而之注;δ事項再功寫本页) 訂 來 A7 B7 五、發明説明（ 部 il η r·} f: 合 fi 社 卬 A點至C點之步驟抽出之線3，成爲圖2 (b)所示之頸高 部3卜 I 其次進行本實施形態的特徵之步驟。如圖1 (c)所示 ’毛細管4上昇至D2點後將線3抽出。然後如圖1⑷所 示，毛細管4朝向第2接合點G方向而移動至]：>3點。接 著如圖1 (e)所示’毛細管4上昇至D4點後將線3抽出。 藉由圖1 (c)至（e)之步驟，在線3安上曲折3(^又由C 點至D3點之動作抽出之長度(由曲折3a至3c之長度)成爲 第1橫線部35。 其次如圖1 (f)所示，毛細管4再次移動至第2接合 點G方向之D5點。之後，如圖1 (g)所示，毛細管4上 昇至D6點後將線3抽出。藉由圖1 (e)至（g)之步驟， 在線3安上曲折3d。又由D3點至D5點之動作抽出之長 度（由曲折3c至3d之長度)成爲第1橫線部36。 其次如圖1 (h)所示，毛細管4向第2接合點G之反 方向移動。亦即進行第2回反向動作而水平移動至E2點 。藉由此D6點至E2點之動作，在線3安上曲折3b。又在 由D5點至E2點之動作抽出之線3成爲圖2 (b)之第3橫 線部37。其次如圖2 (a)所示，毛細管4上昇至F2點後 抽出相當於圖2所示之傾斜部38長之線3。然後關閉夾線 具（圖中未表示）。夾線具一關閉，以後即痕移動毛細管4 亦無法進行線3之抽出。其次如圖2 (b)所示，毛細管4 水平移動至第2接合點G方向之F3點。 其後與習知相同，如圖2 (b)所示，毛細管4圓弧運 (对先Jy]讀背而之>ϊ.;δ寧項再楨fcT本頁) 訂 木紙张又度垧川屮WW家如V ( CNS ) Λ4叱梠（2丨OX 297公飧） A7 B7 ~~..>—，. < —— - ' 丨 - - .— 1 " - 五、發明説明（艺） 動或圓弧運動後下降至第2接合點G的位置’將線3接合 。又，甲F2點至第2接合點G之動作，因與本發明之要 旨無直接關係，當然可進行與在前述習知例開示之動作相 同的動作，或進行其他種種之動作。例如’不設F3點而將 毛細管4由F2點直接移動至第2接合點G亦可。 如此，圖1 (h)之第2回反向動作，並非僅將毛細管 4如圖7 (c)所示上昇之後如圖7 (d)般地進行。亦即，如 圖1 (c)將毛細管4上昇後，如圖1 (d) —度向第2接合 點G之方向移動，其次如圖1 (e)將之上昇後安上曲折3c ，其後如圖1 (e)將之上昇後，接著如圖1 (f)向第2接合 點G之方向移動，其次如圖1 (g)將之上昇。然後，如圖 1 (h)進行第2回反向動作。 因此，在第2橫長部分36的兩側安上曲折3c ，3d ，可安定第2橫長部分36。又因在安上曲折3d後進行圖 1(h)之第2回反向動以安上曲折3b，藉由此動作曲折3d與 3c間不會如習知的鼓起，如圖2 (b)安上較習知強的曲折 3b，又曲折3b之位置安定，同時形成形狀保持力高的線回 路形狀。依此，在低回路，又長線長的情況，且半導體晶 片2之邊緣2c與第2接合點G之距離短的情況，例如即 使在300 /zm以下時，線仍不致接觸半導體晶片2之邊緣 2c 0 【發明之效果】 本發明之半導體裝置，將第1接合點與第2接合點間 用線連接成之線回路形狀，係包含：從第1接合點幾乎垂 「先間讀背而之Vi.意事项再Μ.Ϊ5本頁) '-t 線 川 '1$ 10 X 29〇7^#Ί 一 Λ7 B7 五、發明説明
、1T 直地向上方延伸之頸高部，從該頸高部在橫方向前高後低 地延伸f第1橫線部，從該第1橫線部幾乎水平延伸之第 2橫線部，從第2橫線部前低後高地延伸之第3橫線部， 以及從該第3橫線部延伸至第2接合點之傾斜部。又本發 明的線接合方法，係包含：在第1接合點將線連接之步驟 ;將毛細管上昇一點點後，朝向與第2接合點相反方向稍 微移動以進行第1回反向動作的步驟；將毛細管上昇後， 將毛細管向第2接合點的方向移動之步驟；使毛細管上昇 後，將毛細管向第2接合點之方向移動，繼續使其上昇後 ，朝向與第2接合點相反方向移動以進行第2回反向動作 之步驟；以及，使毛細管上昇後將線抽出，向第2接合點 之方向移動，使線連接在第2接合點之步驟。藉此，可形 成具有安定的線回路形狀及高形狀保持力之線回路形狀。 【圖式之簡單說明】 線 圖1(a)至（h)爲顯示本發明中依各步驟之毛細管移動 之線形狀的狀態圖。 圖2(a)及（b)爲顯示接續於圖1的步驟之毛細管移 動之線形狀的狀態圖。 圖3爲表示習知之台形回路的線回路形狀之圖，（b) 爲表示習知之三角回路的線回路形狀之圖。 圖4(a)至（_g)爲表示用以形成圖3 (a)台形回路之毛細 管的軌跡在各日_$線形狀之狀態圖。 圖5(a)至 細管的軌跡在 丨爲表示用以形成圖3 (a)三角回路之毛 占之線形狀之狀態圖。 11 氺紙恨尺度诚川十代㈨窣枕今（CNS ) Λ4处相（210X 297公筇） 五、發明説明（) 圖6係顯示低回路長線長的情況下習知之台形回路之 線回路f狀。 圖7係顯示圖6之情況下用以形成習知的台形回路線 回路之毛細管的軌跡在各時點之線形狀之狀態圖。 【符號說明】 A 第1接合點 G 第2接合點 3 線 3a ，3b ，3c ，3d 曲折 4 毛細管 31 頸高部 35 第1橫線部 36 第2橫線部 37 第3橫線部 38 傾斜部 _____________________________________12_ 川十W丨内家4:々(i'NS ) /\4』見相（210；/297公漦1

Claims (1)

  1. 經濟部中央標準局員工消費合作社印製 Λ8 B8 一__ g88__ 六、申請專利範圍 1. 一種半導體裝置，其特徵在於：將第1接合點與第 2接合點間用線連接成之線回路形狀，係包含：從第1接 合點幾乎垂直地向上方延伸之頸高部，從該頸高部在橫方 向前高後低地延伸之第1橫線部，從該第1橫線部幾乎水 平延伸之第2橫線部，從第2橫線部前低後高地延伸之第 3橫線部，以及從該第3橫線部延伸至第2接合點之傾斜 部。 2. 如申請專利範圍第i項之半導體裝置，其中，對頸 高部與第1橫線部之連接部，第1橫線部與第2橫線部之 連接部，第2橫線部與第3橫線部之連接部，第3橫線部 與傾斜部之連接部，分別安上曲折。 3. —種線接合方法，係第1接合點與第2接合點之間 用線連接之線接合方法，其特徵在於，係包含： 在第1接合點將線連接之步驟； 將毛細管上昇一點點後，朝向與第2接合點相反方向 稍微移動以進行第1回反向動作的步驟； 將毛細管上昇後，將毛細管向第2接合點的方向移動 之步驟； 使毛細管上昇後，將毛細管向第2接合點之方向移動 ’繼續使其上昇後，朝向與第2接合點相反方向移動以進 行第2回反向動作之步驟；以及 使毛細管上昇後將線抽出，向第2接合點之方向移動 ’使線連接在第2接合點之步驟。 本^^尺度適财關家轉（CNS) A4規格（2數297公缝） II----:--n n 訂 線 (請先間讀背面之注意事項再填寫本頁)
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