JPS6342135A - ワイヤボンデイング方法 - Google Patents

ワイヤボンデイング方法

Info

Publication number
JPS6342135A
JPS6342135A JP61185019A JP18501986A JPS6342135A JP S6342135 A JPS6342135 A JP S6342135A JP 61185019 A JP61185019 A JP 61185019A JP 18501986 A JP18501986 A JP 18501986A JP S6342135 A JPS6342135 A JP S6342135A
Authority
JP
Japan
Prior art keywords
wire
capillary
point
loop
bonding point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61185019A
Other languages
English (en)
Other versions
JPH0560657B2 (ja
Inventor
Nobuhito Yamazaki
山崎　信人
Takeshi Hasegawa
猛 長谷川
Junkichi Enomoto
榎本　順吉
Yoshimitsu Terakado
義光 寺門
Shinichi Kumazawa
熊沢　慎一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP61185019A priority Critical patent/JPS6342135A/ja
Publication of JPS6342135A publication Critical patent/JPS6342135A/ja
Priority to US07/304,804 priority patent/US4932584A/en
Publication of JPH0560657B2 publication Critical patent/JPH0560657B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半導体装置の組立工程において、第１ボンデ
ィング点と第２ボンディング点との間をワイヤで接続す
るワイヤボンディング方法に係り、特にワイヤループ形
成方法に関する。
［従来の技術］ 従来、ワイヤループ形成方法は、例えば特開昭５８−２
２０４３６号公報に示すように、第１ボンディング点に
ワイヤを接続後、ワイヤループ形成に必要な量だけキャ
ピラリを上昇させてワイヤを繰り出し、次に目的とする
ループ高さを中心とする円軌道でキャピラリを移動させ
てワイヤを第２ボンディング点に接続している。
［発明が解決しようとする問題点］ 上記従来例では、単に第１ボンディング点よりキャピラ
リを上昇させてワイヤを繰り出し、その後キャピラリを
円軌道で第２ボンディング点に移動させているので、ワ
イヤが円軌道の中心から曲るとは限らない、このため、
ワイヤの曲り部分が円軌道の中心から下方の場合には、
形成されたワイヤループ形状は、ワイヤが多く出すぎて
いることによってループのたれ、曲り等が発生する。こ
の現象は、特に第１ボンディング点と第２ボンディング
点との距離が長い、例えば３〜４　ｍ　ｍにおいて多い
。
本発明の目的は、ループ形状の高さが安定し、良好なワ
イヤループ形成が行えるワイヤボンディング方法を提供
することにある。
［問題点を解決するための手段］ 上記従来技術の問題点は、第１ボンディング点にワイヤ
を接続後、キャピラリを少し上昇させ、続いて第２ボン
ディング点と逆方向にわずかに移動させ、その後ワイヤ
ループ形成に必要な量だけキャピラリを上昇させてワイ
ヤを繰り出し、次にキャピラリを前記したワイヤループ
形成に必要な量を半径とした円軌道をもって第２ボンデ
ィング点上方に移動させてワイヤを第２ボンディング点
に接続することにより解決される。
［作用〕 第１ボンディング点にワイヤを接続後、キャピラリを少
し上昇させ、続いて第２ボンディング点と逆方向にわず
かに移動させることにより、キャピラリの下端に位置す
るワイヤの部分にくせが付く。そこで次にワイヤループ
形成に必要な量だけキャピラリを上昇させてワイヤを繰
り出し、次にキャピラリを前記したワイヤループ形成に
必要な量を半径とした円軌道をもって第２ボンディング
点上方に移動させると、ワイヤは前記くせの部分より曲
げられるので、くせの部分がワイヤルーズの頂点となり
、ループ形状の高さが安定し、良好なワイヤループ形状
が得られる。
［実施例］ 以下、本発明の一実施例を第１図及び第２図により説明
する。第１図はキャピラリの軌跡を示し、第２図はキャ
ピラリの軌跡による各時点でのワイヤ形状を示す。
ワイヤ１をクランプするクランパは開状態で、第１ボン
ディング点Ａにワイヤ１を接続後、キャピラリ２はＢ点
まで上昇する。このＢ点で一旦又は瞬時停止した後１次
にキャピラリ２を第２ボンディング点Ｇと逆方向にわず
かに０点まで水平移動させる。これにより、ワイヤ１は
、第２図（ｂ）に示すように、Ａ点から０点に傾斜した
形状となり、キャピラリ２の下端に位置するワイヤ１の
部分にくせｌａが付く０次に０点でキャピラリ２を一旦
又は瞬時停止させ、その後キャピラリ２をワイヤループ
形成に必要な量Ｈ（この量Ｈについては後述する）の半
分の高さのＤ点まで上昇させてワイヤ１を繰り出す、続
いてキャピラリ２を前記Ｈの半分の量だけ更に上昇させ
て第１ボンディング点Ａの真上のＥ点に位置させて停止
させる。その後クランパを閉じる。クランパを閉じると
、以後キャピラリ２が移動してもワイヤ１の繰り出しは
行われない、この状態におけるワイヤｌは、第２図（ｄ
）及び第２図（ｅ）の実線で示す形状となる。
次にキャピラリ２を前記Ｈを半径とする円軌道で第２ボ
ンディング点Ｇの上方のＦ点まで移動させ、続いて第２
ボンディング点Ｇに下降させてボンディングをする。こ
の状態を第２図（ｅ）に示す、この第２図（ｅ）に示す
キャピラリ２の円軌道により、前記したワイヤ１のくせ
Ｉａの部分を中心としてワイヤ１は曲り、〈せｌａの部
分がワイヤループの頂点となるので、ワイヤループ形状
が安定し、ループのたれ、曲りが防止される。またくせ
ｌａの部分がワイヤルーズの頂点となることにより、こ
のくせ１ａの部分の設定によりループ高さを制御するこ
とができる。
次に前記したワイヤループ形成に必要な量Ｈの設定方法
を第２図（ｅ）によって説明する。今、第１ボンディン
グ点Ａと第２ボンディング点Ｇの長さをし、第１ボンデ
ィング点Ａと第２ボンディング点Ｇとの段差をＭ、ルー
プ高さをＮとすると、Ｈ＝、／（Ｍ＋Ｎ）　２＋Ｌ２　
となる。
次にキャピラリ２のＡ点からＢ点への移動量及びＢ点か
ら０点への移動量について説明する。
Ａ点からＢ点への移動量は、２００−１．０００７ｚｍ
の範囲に設定する。この値は、ワイヤ１の強度（ワイヤ
径、硬さ等）により最適値を設定する。実装実験からす
ると、移動量は使用ワイヤ径の１０〜１５倍程度を目安
にすると良好である。
例えばワイヤ径が２５ｐｍφの時、２５０〜４００ＪＬ
ｍの範囲に設定する。この設定により、ワイヤ１のくせ
１ａが付く位置が変化する。ワイヤ１のくせ１ａの部分
がループの頂点部になるので、この設定によりループ高
さを制御することができる。
［発明の効果］ 以上の説明から明らかなように、本発明によれば、形成
されるワイヤルーズの頂点となる部分にくせが付けられ
、この部分をより曲げられるので、ループ形状の高さが
安定し、良好なワイヤループ形状が得られる。
【図面の簡単な説明】
第１図は本発明の一実施例になるキャピラリの軌跡を示
す説明図、第２図（ａ）乃至（ｅ）はキャピラリの軌跡
による各時点でのワイヤ形状を示す説明図である。 １：ワイヤ。 ２：キャピラリ、 Ａ：第１ボンディング点、 Ｇ：第２ボンディング点。 第１図 Ａ：第１ホ゛ンテ゛イング点 Ｇ：第２ホ゛〉デ゛イン７’　、、９゜第２ （ａ　）　　　　（ｂ） １：ワイヤ ２：キャピラリ Ａ：　第　ｌ　−“ｌ、”ンテ“インデ赤。 Ｇ：第２オＳンデ゛イ〉γ、！。 １〇− 図 （ｄ） （Ｃ） ・■ （ｅ） ７メ２ 優 へ 四グか ′■

Claims (1)

    【特許請求の範囲】
  1. 第１ボンディング点と第２ボンディング点との間をワイ
    ヤで接続するワイヤボンディング方法において、第１ボ
    ンディング点にワイヤを接続後、キャピラリを少し上昇
    させ、続いて第２ボンディング点と逆方向にわずかに移
    動させ、その後ワイヤループ形成に必要な量だけキャピ
    ラリを上昇させてワイヤを繰り出し、次にキャピラリを
    前記したワイヤループ形成に必要な量を半径とした円軌
    道をもつて第２ボンディング点上方に移動させてワイヤ
    を第２ボンディング点に接続することを特徴とするワイ
    ヤボンディング方法。
JP61185019A 1986-08-08 1986-08-08 ワイヤボンデイング方法 Granted JPS6342135A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61185019A JPS6342135A (ja) 1986-08-08 1986-08-08 ワイヤボンデイング方法
US07/304,804 US4932584A (en) 1986-08-08 1989-01-31 Method of wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61185019A JPS6342135A (ja) 1986-08-08 1986-08-08 ワイヤボンデイング方法

Publications (2)

Publication Number Publication Date
JPS6342135A true JPS6342135A (ja) 1988-02-23
JPH0560657B2 JPH0560657B2 (ja) 1993-09-02

Family

ID=16163348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61185019A Granted JPS6342135A (ja) 1986-08-08 1986-08-08 ワイヤボンデイング方法

Country Status (2)

Country Link
US (1) US4932584A (ja)
JP (1) JPS6342135A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4932584A (en) * 1986-08-08 1990-06-12 Kabushiki Kaisha Shinkawa Method of wire bonding
JPH02310937A (ja) * 1989-05-26 1990-12-26 Marine Instr Co Ltd ワイヤボンディング方法
US5148964A (en) * 1990-02-13 1992-09-22 Kabushiki Kaisha Toshiba Wire bonding method
US5156323A (en) * 1991-02-27 1992-10-20 Kabushiki Kaisha Shinkawa Wire bonding method
US5192018A (en) * 1991-02-27 1993-03-09 Kabushiki Kaisha Shinkawa Wire bonding method
JPH07122587A (ja) * 1993-10-28 1995-05-12 Nec Corp ワイヤボンディング方法
US7014095B2 (en) 2002-08-27 2006-03-21 Kabushiki Kaisha Shinkawa Wire bonding method, wire bonding apparatus and wire bonding program
JP2012169309A (ja) * 2011-02-09 2012-09-06 Ricoh Co Ltd 電子装置及びその製造方法並びに画像形成装置

Families Citing this family (40)

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