TW376537B - Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber - Google Patents

Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber

Info

Publication number
TW376537B
TW376537B TW087108754A TW87108754A TW376537B TW 376537 B TW376537 B TW 376537B TW 087108754 A TW087108754 A TW 087108754A TW 87108754 A TW87108754 A TW 87108754A TW 376537 B TW376537 B TW 376537B
Authority
TW
Taiwan
Prior art keywords
gas
process chamber
sampling
semiconductor devices
manufacturing semiconductor
Prior art date
Application number
TW087108754A
Other languages
English (en)
Inventor
Baik-Soon Choi
Joong-Il An
Jin-Sung Kim
Jung-Ki Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW376537B publication Critical patent/TW376537B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW087108754A 1997-10-29 1998-06-03 Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber TW376537B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970056009A KR100253089B1 (ko) 1997-10-29 1997-10-29 반도체소자 제조용 화학기상증착장치 및 이의 구동방법, 그 공정챔버 세정공정 레시피 최적화방법

Publications (1)

Publication Number Publication Date
TW376537B true TW376537B (en) 1999-12-11

Family

ID=19523687

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087108754A TW376537B (en) 1997-10-29 1998-06-03 Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber

Country Status (7)

Country Link
US (3) US6279503B1 (zh)
JP (1) JP4005229B2 (zh)
KR (1) KR100253089B1 (zh)
CN (1) CN1117887C (zh)
DE (1) DE19832566C2 (zh)
GB (1) GB2331107B (zh)
TW (1) TW376537B (zh)

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CN111112267B (zh) * 2019-12-24 2022-09-02 西安奕斯伟材料科技有限公司 一种气相沉积反应腔体的清洗装置、清洗系统及清洗方法
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CN114798591B (zh) * 2021-01-27 2023-08-18 中国科学院微电子研究所 基于晶片清理仓的气压调控装置及方法
CN115389096A (zh) * 2022-08-26 2022-11-25 江苏微导纳米科技股份有限公司 气体压力探测装置及沉积设备
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Also Published As

Publication number Publication date
US6279503B1 (en) 2001-08-28
GB2331107B (en) 2002-11-06
GB2331107A (en) 1999-05-12
DE19832566A1 (de) 1999-05-06
US20010019896A1 (en) 2001-09-06
KR100253089B1 (ko) 2000-05-01
DE19832566C2 (de) 2001-06-07
GB9812786D0 (en) 1998-08-12
JPH11145067A (ja) 1999-05-28
JP4005229B2 (ja) 2007-11-07
CN1215764A (zh) 1999-05-05
KR19990034410A (ko) 1999-05-15
US6664119B2 (en) 2003-12-16
US6432838B1 (en) 2002-08-13
CN1117887C (zh) 2003-08-13

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