CN111112267B - 一种气相沉积反应腔体的清洗装置、清洗系统及清洗方法 - Google Patents
一种气相沉积反应腔体的清洗装置、清洗系统及清洗方法 Download PDFInfo
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- CN111112267B CN111112267B CN201911347026.2A CN201911347026A CN111112267B CN 111112267 B CN111112267 B CN 111112267B CN 201911347026 A CN201911347026 A CN 201911347026A CN 111112267 B CN111112267 B CN 111112267B
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- cleaning
- vapor deposition
- deposition reaction
- chamber
- reaction cavity
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- 238000004140 cleaning Methods 0.000 title claims abstract description 335
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 150
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 149
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 138
- 239000007921 spray Substances 0.000 claims abstract description 59
- 238000005507 spraying Methods 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 3
- 230000003749 cleanliness Effects 0.000 abstract description 13
- 238000010926 purge Methods 0.000 abstract description 8
- 239000012530 fluid Substances 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 239000002253 acid Substances 0.000 description 30
- 239000010453 quartz Substances 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 239000007789 gas Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000008367 deionised water Substances 0.000 description 18
- 229910021641 deionized water Inorganic materials 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
- 238000002791 soaking Methods 0.000 description 11
- 238000005406 washing Methods 0.000 description 8
- 238000007599 discharging Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000012864 cross contamination Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005571 horizontal transmission Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/20—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought
- B08B9/28—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking
- B08B9/30—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking and having conveyors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/20—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought
- B08B9/28—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking
- B08B9/34—Arrangements of conduits or nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911347026.2A CN111112267B (zh) | 2019-12-24 | 2019-12-24 | 一种气相沉积反应腔体的清洗装置、清洗系统及清洗方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911347026.2A CN111112267B (zh) | 2019-12-24 | 2019-12-24 | 一种气相沉积反应腔体的清洗装置、清洗系统及清洗方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111112267A CN111112267A (zh) | 2020-05-08 |
CN111112267B true CN111112267B (zh) | 2022-09-02 |
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Family Applications (1)
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CN201911347026.2A Active CN111112267B (zh) | 2019-12-24 | 2019-12-24 | 一种气相沉积反应腔体的清洗装置、清洗系统及清洗方法 |
Country Status (1)
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CN (1) | CN111112267B (zh) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100253089B1 (ko) * | 1997-10-29 | 2000-05-01 | 윤종용 | 반도체소자 제조용 화학기상증착장치 및 이의 구동방법, 그 공정챔버 세정공정 레시피 최적화방법 |
US6767836B2 (en) * | 2002-09-04 | 2004-07-27 | Asm Japan K.K. | Method of cleaning a CVD reaction chamber using an active oxygen species |
CN101352714B (zh) * | 2007-12-11 | 2010-11-03 | 苏青茂 | 一种组合式钟罩清洗机及其操作方法 |
JP4979633B2 (ja) * | 2008-05-16 | 2012-07-18 | 株式会社日立国際電気 | 半導体装置の製造方法およびクリーニング方法ならびに半導体装置の製造装置 |
CN102825041B (zh) * | 2012-08-15 | 2014-10-29 | 王曙光 | 全方位多层全自动多功能清洗机 |
CN204265846U (zh) * | 2014-12-05 | 2015-04-15 | 中芯国际集成电路制造(北京)有限公司 | 角度调整装置 |
CN107433275B (zh) * | 2016-05-25 | 2021-02-12 | 上海新昇半导体科技有限公司 | 石英腔体的清洗装置及清洗方法 |
CN107433274A (zh) * | 2016-05-25 | 2017-12-05 | 上海新昇半导体科技有限公司 | 石英腔体的清洗方法 |
CN207401813U (zh) * | 2017-09-26 | 2018-05-25 | 江苏康博新材料科技有限公司 | 一种钟罩自动清洗机 |
US10668511B2 (en) * | 2018-03-20 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of cleaning process chamber |
CN108735580B (zh) * | 2018-06-05 | 2020-12-01 | 钟祥市创林机电技术有限公司 | 一种半导体芯片生产用物理气相沉积装置 |
CN108866505B (zh) * | 2018-08-02 | 2020-12-04 | 武汉华星光电半导体显示技术有限公司 | 一种化学气相沉积设备 |
CN109908377A (zh) * | 2019-03-06 | 2019-06-21 | 中国人民解放军第八一医院 | 一种用于医疗病床的清洗消毒装置 |
CN110125082B (zh) * | 2019-04-26 | 2020-12-08 | 宁波亚大自动化科技有限公司 | 自动清洗机及其清洗方法 |
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- 2019-12-24 CN CN201911347026.2A patent/CN111112267B/zh active Active
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CN111112267A (zh) | 2020-05-08 |
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Effective date of registration: 20210926 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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CP03 | Change of name, title or address |
Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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CP03 | Change of name, title or address |