TW376520B - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
TW376520B
TW376520B TW083106141A TW83106141A TW376520B TW 376520 B TW376520 B TW 376520B TW 083106141 A TW083106141 A TW 083106141A TW 83106141 A TW83106141 A TW 83106141A TW 376520 B TW376520 B TW 376520B
Authority
TW
Taiwan
Prior art keywords
data lines
dividedly
reading
lines
time
Prior art date
Application number
TW083106141A
Other languages
English (en)
Inventor
Hiroshi Sato
Keiichi Yoshida
Tetsuya Tsujikawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW376520B publication Critical patent/TW376520B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW083106141A 1993-07-26 1994-07-05 Semiconductor storage device TW376520B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20357093A JP3432548B2 (ja) 1993-07-26 1993-07-26 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW376520B true TW376520B (en) 1999-12-11

Family

ID=16476319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083106141A TW376520B (en) 1993-07-26 1994-07-05 Semiconductor storage device

Country Status (5)

Country Link
US (3) US5473570A (zh)
JP (1) JP3432548B2 (zh)
KR (2) KR100377646B1 (zh)
CN (1) CN1043275C (zh)
TW (1) TW376520B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5732010A (en) * 1992-09-22 1998-03-24 Kabushiki Kaisha Toshiba Dynamic random access memory device with the combined open/folded bit-line pair arrangement
KR100473308B1 (ko) 1995-01-31 2005-03-14 가부시끼가이샤 히다치 세이사꾸쇼 불휘발성 메모리 장치
TW407234B (en) 1997-03-31 2000-10-01 Hitachi Ltd Semiconductor memory device, non-volatile semiconductor memory device and data reading method thereof
KR100259577B1 (ko) * 1997-05-29 2000-06-15 김영환 반도체 메모리
JP3311979B2 (ja) * 1997-12-12 2002-08-05 株式会社東芝 半導体集積回路装置
JPH11213684A (ja) * 1998-01-28 1999-08-06 Toshiba Corp 不揮発性半導体メモリ
US6829184B2 (en) * 2002-01-28 2004-12-07 Intel Corporation Apparatus and method for encoding auto-precharge
KR100468733B1 (ko) * 2002-06-07 2005-01-29 삼성전자주식회사 스큐드 버스 구동 방법 및 회로
US6747898B2 (en) * 2002-07-08 2004-06-08 Micron Technology, Inc. Column decode circuit for high density/high performance memories
WO2004042821A1 (ja) * 2002-11-08 2004-05-21 Hitachi, Ltd. 半導体記憶装置
KR100546385B1 (ko) * 2003-09-30 2006-01-26 삼성전자주식회사 입출력라인 감지증폭기와 입출력라인 드라이버 제어방법및 이를 이용하는 반도체 메모리장치
KR100656874B1 (ko) * 2004-07-28 2006-12-12 엠시스랩 주식회사 피크전류의 크기를 저감하는 고속 입력 디스플레이드라이버와 이를 이용한 데이터 입력방법
JP4833073B2 (ja) * 2004-09-29 2011-12-07 スパンション エルエルシー 半導体装置及びデータ読み出し方法
US7209406B2 (en) * 2005-05-19 2007-04-24 Macronix International Co., Ltd. Memory device with rapid word line switch
US7706183B2 (en) * 2005-07-27 2010-04-27 Spansion Llc Read mode for flash memory
KR100680529B1 (ko) * 2005-12-13 2007-02-08 기아자동차주식회사 차량 아웃사이드 미러 거울면의 댐핑 지지 구조
KR102084461B1 (ko) 2013-03-04 2020-04-14 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치
JP5502218B2 (ja) * 2013-03-04 2014-05-28 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US9601167B1 (en) 2015-03-02 2017-03-21 Michael C. Stephens, Jr. Semiconductor device having dual-gate transistors and calibration circuitry

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3177270D1 (de) * 1980-10-15 1992-02-27 Toshiba Kawasaki Kk Halbleiterspeicher mit datenprogrammierzeit.
JPS6325894A (ja) * 1986-07-18 1988-02-03 Hitachi Ltd 半導体記憶装置
JP2600304B2 (ja) * 1988-06-30 1997-04-16 三菱電機株式会社 半導体記憶装置とこれを用いたデータパス
NL8802125A (nl) * 1988-08-29 1990-03-16 Philips Nv Geintegreerde geheugenschakeling met parallelle en seriele in- en uitgang.
JP2633645B2 (ja) * 1988-09-13 1997-07-23 株式会社東芝 半導体メモリ装置
EP0363031B1 (en) * 1988-09-20 1994-11-17 Fujitsu Limited Serial input/output semiconductor memory
JP2900523B2 (ja) * 1990-05-31 1999-06-02 日本電気株式会社 不揮発性半導体メモリ装置の書込回路
US5289413A (en) * 1990-06-08 1994-02-22 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device with high-speed serial-accessing column decoder
JP2723695B2 (ja) * 1991-07-02 1998-03-09 シャープ株式会社 半導体記憶装置

Also Published As

Publication number Publication date
KR100368195B1 (ko) 2003-01-24
KR960005618A (ko) 1996-02-23
JP3432548B2 (ja) 2003-08-04
CN1102903A (zh) 1995-05-24
CN1043275C (zh) 1999-05-05
KR100377646B1 (ko) 2004-03-25
US5699311A (en) 1997-12-16
US5654916A (en) 1997-08-05
JPH0745087A (ja) 1995-02-14
US5473570A (en) 1995-12-05

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees