TW375739B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW375739B
TW375739B TW087106965A TW87106965A TW375739B TW 375739 B TW375739 B TW 375739B TW 087106965 A TW087106965 A TW 087106965A TW 87106965 A TW87106965 A TW 87106965A TW 375739 B TW375739 B TW 375739B
Authority
TW
Taiwan
Prior art keywords
bank
memory
state
memory device
semiconductor memory
Prior art date
Application number
TW087106965A
Other languages
English (en)
Inventor
Seiji Sawada
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW375739B publication Critical patent/TW375739B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System (AREA)
  • Static Random-Access Memory (AREA)
TW087106965A 1997-09-02 1998-05-06 Semiconductor memory device TW375739B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9237302A JPH1186541A (ja) 1997-09-02 1997-09-02 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW375739B true TW375739B (en) 1999-12-01

Family

ID=17013359

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087106965A TW375739B (en) 1997-09-02 1998-05-06 Semiconductor memory device

Country Status (6)

Country Link
US (1) US5903514A (zh)
JP (1) JPH1186541A (zh)
KR (1) KR100304097B1 (zh)
CN (1) CN1130729C (zh)
DE (1) DE19821215A1 (zh)
TW (1) TW375739B (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6804760B2 (en) 1994-12-23 2004-10-12 Micron Technology, Inc. Method for determining a type of memory present in a system
US5526320A (en) 1994-12-23 1996-06-11 Micron Technology Inc. Burst EDO memory device
US6525971B2 (en) * 1995-06-30 2003-02-25 Micron Technology, Inc. Distributed write data drivers for burst access memories
US5610864A (en) 1994-12-23 1997-03-11 Micron Technology, Inc. Burst EDO memory device with maximized write cycle timing
US7681005B1 (en) * 1996-01-11 2010-03-16 Micron Technology, Inc. Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation
US6981126B1 (en) * 1996-07-03 2005-12-27 Micron Technology, Inc. Continuous interleave burst access
US6401186B1 (en) 1996-07-03 2002-06-04 Micron Technology, Inc. Continuous burst memory which anticipates a next requested start address
JPH11149786A (ja) * 1997-11-18 1999-06-02 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ
KR100323254B1 (ko) * 1998-04-24 2002-02-04 아끼구사 나오유끼 반도체 집적 회로
JP2000030447A (ja) * 1998-07-14 2000-01-28 Mitsubishi Electric Corp 半導体記憶装置
JP2000048570A (ja) 1998-07-28 2000-02-18 Mitsubishi Electric Corp 半導体記憶装置
US6141286A (en) * 1998-08-21 2000-10-31 Micron Technology, Inc. Embedded DRAM architecture with local data drivers and programmable number of data read and data write lines
JP4212159B2 (ja) * 1998-09-28 2009-01-21 株式会社ルネサステクノロジ 同期型半導体記憶装置
JP3495276B2 (ja) * 1999-01-14 2004-02-09 日本電気株式会社 半導体記憶装置
JP3289701B2 (ja) * 1999-04-12 2002-06-10 日本電気株式会社 半導体記憶装置
JP2001067866A (ja) * 1999-08-30 2001-03-16 Mitsubishi Electric Corp 同期型半導体記憶装置
US6477108B2 (en) * 2000-09-01 2002-11-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including memory with reduced current consumption
KR100379339B1 (ko) * 2001-01-16 2003-04-10 주식회사 하이닉스반도체 멀티-뱅크 반도체 메모리장치
JP2003077276A (ja) * 2001-08-31 2003-03-14 Nec Corp 半導体メモリ
US6678204B2 (en) * 2001-12-27 2004-01-13 Elpida Memory Inc. Semiconductor memory device with high-speed operation and methods of using and designing thereof
KR100532433B1 (ko) * 2003-05-07 2005-11-30 삼성전자주식회사 하나의 패드를 통하여 데이터를 동시에 입출력하기 위한장치 및 방법
KR100668829B1 (ko) * 2004-10-12 2007-01-16 주식회사 하이닉스반도체 메모리 장치용 데이타 출력 제어 회로
KR100639614B1 (ko) * 2004-10-15 2006-10-30 주식회사 하이닉스반도체 뱅크 내 셀을 테스트하기 위한 데이터 출력 컴프레스 회로및 방법
JP4628319B2 (ja) * 2006-07-06 2011-02-09 ルネサスエレクトロニクス株式会社 同期型半導体記憶装置
KR100875666B1 (ko) * 2007-03-31 2008-12-24 주식회사 하이닉스반도체 반도체 메모리 소자
KR100942949B1 (ko) * 2008-06-30 2010-02-22 주식회사 하이닉스반도체 반도체 메모리장치
KR20110056124A (ko) * 2009-11-20 2011-05-26 삼성전자주식회사 전력 소모를 감소한 메모리 콘트롤러, 메모리 장치 및 메모리 시스템
JP2011165298A (ja) 2010-01-18 2011-08-25 Elpida Memory Inc 半導体記憶装置及びこれを備えた情報処理システム
KR101115453B1 (ko) * 2010-02-26 2012-02-24 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 동작방법
JP2012014769A (ja) * 2010-06-30 2012-01-19 Elpida Memory Inc 半導体装置およびそのテスト方法
US9135982B2 (en) * 2013-12-18 2015-09-15 Intel Corporation Techniques for accessing a dynamic random access memory array
KR101739568B1 (ko) 2015-05-15 2017-05-25 안상현 코마스크에 배기밸브를 구비한 미세먼지 제거 호흡기

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06342595A (ja) * 1993-06-01 1994-12-13 Matsushita Electric Ind Co Ltd デコーダ及び半導体記憶装置
US5796673A (en) * 1994-10-06 1998-08-18 Mosaid Technologies Incorporated Delay locked loop implementation in a synchronous dynamic random access memory
JP2970434B2 (ja) * 1994-10-31 1999-11-02 日本電気株式会社 同期型半導体記憶装置およびセンス制御方法

Also Published As

Publication number Publication date
KR19990029276A (ko) 1999-04-26
US5903514A (en) 1999-05-11
KR100304097B1 (ko) 2001-11-22
CN1210342A (zh) 1999-03-10
CN1130729C (zh) 2003-12-10
DE19821215A1 (de) 1999-03-04
JPH1186541A (ja) 1999-03-30

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