TW374927B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW374927B
TW374927B TW087101463A TW87101463A TW374927B TW 374927 B TW374927 B TW 374927B TW 087101463 A TW087101463 A TW 087101463A TW 87101463 A TW87101463 A TW 87101463A TW 374927 B TW374927 B TW 374927B
Authority
TW
Taiwan
Prior art keywords
setting
unconditioned
mode
memory device
semiconductor memory
Prior art date
Application number
TW087101463A
Other languages
English (en)
Chinese (zh)
Inventor
Taku Ogura
Atsushi Ohba
Tsuyoshi Honma
Kazuo Kobayasi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW374927B publication Critical patent/TW374927B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
TW087101463A 1997-10-17 1998-02-05 Semiconductor memory device TW374927B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28522197A JP3884839B2 (ja) 1997-10-17 1997-10-17 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW374927B true TW374927B (en) 1999-11-21

Family

ID=17688681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087101463A TW374927B (en) 1997-10-17 1998-02-05 Semiconductor memory device

Country Status (4)

Country Link
US (1) US5991197A (enExample)
JP (1) JP3884839B2 (enExample)
KR (1) KR100301409B1 (enExample)
TW (1) TW374927B (enExample)

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JP5763440B2 (ja) * 2011-06-22 2015-08-12 ラピスセミコンダクタ株式会社 半導体記憶装置
CN102385556B (zh) * 2011-11-08 2014-11-26 聚辰半导体(上海)有限公司 串行非易失性存储器及解除存储器写保护的方法
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KR20210132253A (ko) * 2020-04-24 2021-11-04 삼성전자주식회사 메모리 장치
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JP3487690B2 (ja) * 1995-06-20 2004-01-19 シャープ株式会社 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JPH11120781A (ja) 1999-04-30
JP3884839B2 (ja) 2007-02-21
KR19990036468A (ko) 1999-05-25
US5991197A (en) 1999-11-23
KR100301409B1 (ko) 2001-09-22

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