TW368699B - Manufacturing method for semiconductor device and manufacturing device for semiconductor - Google Patents

Manufacturing method for semiconductor device and manufacturing device for semiconductor

Info

Publication number
TW368699B
TW368699B TW086119928A TW86119928A TW368699B TW 368699 B TW368699 B TW 368699B TW 086119928 A TW086119928 A TW 086119928A TW 86119928 A TW86119928 A TW 86119928A TW 368699 B TW368699 B TW 368699B
Authority
TW
Taiwan
Prior art keywords
filming
semiconductor wafer
manufacturing
semiconductor
chamber
Prior art date
Application number
TW086119928A
Other languages
English (en)
Inventor
Seiji Muranaka
Cozy Ban
Akihiko Osaki
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW368699B publication Critical patent/TW368699B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086119928A 1997-06-10 1997-12-29 Manufacturing method for semiconductor device and manufacturing device for semiconductor TW368699B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9152184A JPH10340857A (ja) 1997-06-10 1997-06-10 半導体装置の製造方法及び半導体製造装置

Publications (1)

Publication Number Publication Date
TW368699B true TW368699B (en) 1999-09-01

Family

ID=15534901

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119928A TW368699B (en) 1997-06-10 1997-12-29 Manufacturing method for semiconductor device and manufacturing device for semiconductor

Country Status (5)

Country Link
US (1) US6410454B1 (zh)
JP (1) JPH10340857A (zh)
KR (1) KR19990006332A (zh)
DE (1) DE19801558A1 (zh)
TW (1) TW368699B (zh)

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WO2000063956A1 (fr) * 1999-04-20 2000-10-26 Sony Corporation Procede et dispositif pour realiser un depot de couches minces, et procede pour la production d'un dispositif a semiconducteur a couches minces
JP4346741B2 (ja) * 1999-08-05 2009-10-21 キヤノンアネルバ株式会社 発熱体ｃｖｄ装置及び付着膜の除去方法
DE19939600A1 (de) * 1999-08-20 2001-02-22 Aurion Anlagentechnik Gmbh Wafer-Behandlungsanlage
JP2002167661A (ja) * 2000-11-30 2002-06-11 Anelva Corp 磁性多層膜作製装置
JP4607347B2 (ja) * 2001-02-02 2011-01-05 東京エレクトロン株式会社 被処理体の処理方法及び処理装置
JP4599734B2 (ja) * 2001-03-14 2010-12-15 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
JP4644964B2 (ja) * 2001-04-04 2011-03-09 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
JP4599746B2 (ja) * 2001-04-04 2010-12-15 ソニー株式会社 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法
WO2003005435A1 (fr) * 2001-07-05 2003-01-16 Tokyo Electron Limited Dispositif de traitement de substrat et procede de traitement de substrat, procede d'aplanissement
US7048385B2 (en) 2004-06-16 2006-05-23 Goldeneye, Inc. Projection display systems utilizing color scrolling and light emitting diodes
US20060040499A1 (en) * 2004-08-20 2006-02-23 Steve Walther In situ surface contaminant removal for ion implanting
US20090038636A1 (en) * 2007-08-09 2009-02-12 Asml Netherlands B.V. Cleaning method
JP5693042B2 (ja) * 2010-04-27 2015-04-01 キヤノン株式会社 洗浄装置、および洗浄方法
US20120312326A1 (en) * 2011-06-10 2012-12-13 Applied Materials, Inc. Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (hwcvd) chamber
US8962078B2 (en) * 2012-06-22 2015-02-24 Tokyo Electron Limited Method for depositing dielectric films
WO2014100047A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Methods and apparatus for cleaning substrate structures with atomic hydrogen
US20140179110A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Methods and apparatus for processing germanium containing material, a iii-v compound containing material, or a ii-vi compound containing material disposed on a substrate using a hot wire source
CN103606594B (zh) * 2013-11-20 2017-09-12 英利能源（中国）有限公司 硅片的清理方法及减反射膜的制备方法
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
JP7278123B2 (ja) * 2019-03-22 2023-05-19 東京エレクトロン株式会社 処理方法
US20220298620A1 (en) * 2021-03-22 2022-09-22 Applied Materias, Inc. Enhanced oxidation with hydrogen radical pretreatment

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Also Published As

Publication number Publication date
JPH10340857A (ja) 1998-12-22
US6410454B1 (en) 2002-06-25
KR19990006332A (ko) 1999-01-25
DE19801558A1 (de) 1998-12-17

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