TW364112B - Semiconductor memory having redundancy circuit - Google Patents
Semiconductor memory having redundancy circuitInfo
- Publication number
- TW364112B TW364112B TW086113829A TW86113829A TW364112B TW 364112 B TW364112 B TW 364112B TW 086113829 A TW086113829 A TW 086113829A TW 86113829 A TW86113829 A TW 86113829A TW 364112 B TW364112 B TW 364112B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- memory cell
- judgment device
- pad
- semiconductor memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25583196A JP3613622B2 (ja) | 1996-09-27 | 1996-09-27 | 半導体メモリ |
Publications (1)
Publication Number | Publication Date |
---|---|
TW364112B true TW364112B (en) | 1999-07-11 |
Family
ID=17284218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086113829A TW364112B (en) | 1996-09-27 | 1997-09-23 | Semiconductor memory having redundancy circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US5983358A (zh) |
JP (1) | JP3613622B2 (zh) |
KR (1) | KR100446853B1 (zh) |
TW (1) | TW364112B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI483261B (zh) * | 2011-09-25 | 2015-05-01 | Nanya Technology Corp | 記憶體裝置及其操作方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3219148B2 (ja) * | 1998-11-26 | 2001-10-15 | 日本電気株式会社 | データメモリ装置 |
JP2002015595A (ja) * | 2000-06-29 | 2002-01-18 | Sanyo Electric Co Ltd | 冗長メモリ回路 |
JP2002042495A (ja) * | 2000-07-21 | 2002-02-08 | Mitsubishi Electric Corp | 冗長救済回路、方法および半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0670880B2 (ja) * | 1983-01-21 | 1994-09-07 | 株式会社日立マイコンシステム | 半導体記憶装置 |
JPS6013398A (ja) * | 1983-07-04 | 1985-01-23 | Hitachi Ltd | 半導体多値記憶装置 |
JPH0666394B2 (ja) * | 1983-12-16 | 1994-08-24 | 富士通株式会社 | 半導体記憶装置 |
EP0148488B1 (en) * | 1983-12-23 | 1992-03-18 | Hitachi, Ltd. | Semiconductor memory having multiple level storage structure |
JPS62184700A (ja) * | 1986-02-10 | 1987-08-13 | Hitachi Ltd | 半導体記憶装置 |
JPH01224998A (ja) * | 1988-03-04 | 1989-09-07 | Toshiba Corp | 半導体記憶装置 |
JP3268823B2 (ja) * | 1992-05-28 | 2002-03-25 | 日本テキサス・インスツルメンツ株式会社 | 半導体記憶装置 |
US5550394A (en) * | 1993-06-18 | 1996-08-27 | Texas Instruments Incorporated | Semiconductor memory device and defective memory cell correction circuit |
JP3441161B2 (ja) * | 1994-05-26 | 2003-08-25 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5528539A (en) * | 1994-09-29 | 1996-06-18 | Micron Semiconductor, Inc. | High speed global row redundancy system |
US5845319A (en) * | 1995-08-23 | 1998-12-01 | Fujitsu Limited | Disk array device which separates local and physical disks using striping and operation mode selection |
US5706292A (en) * | 1996-04-25 | 1998-01-06 | Micron Technology, Inc. | Layout for a semiconductor memory device having redundant elements |
-
1996
- 1996-09-27 JP JP25583196A patent/JP3613622B2/ja not_active Expired - Fee Related
-
1997
- 1997-09-23 TW TW086113829A patent/TW364112B/zh active
- 1997-09-24 KR KR1019970048594A patent/KR100446853B1/ko not_active IP Right Cessation
- 1997-09-26 US US08/938,962 patent/US5983358A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI483261B (zh) * | 2011-09-25 | 2015-05-01 | Nanya Technology Corp | 記憶體裝置及其操作方法 |
Also Published As
Publication number | Publication date |
---|---|
JP3613622B2 (ja) | 2005-01-26 |
US5983358A (en) | 1999-11-09 |
KR100446853B1 (ko) | 2004-11-26 |
JPH10106287A (ja) | 1998-04-24 |
KR19980024926A (ko) | 1998-07-06 |
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