TW357414B - Method and apparatus for heat-treating substrates - Google Patents

Method and apparatus for heat-treating substrates

Info

Publication number
TW357414B
TW357414B TW084110491A TW84110491A TW357414B TW 357414 B TW357414 B TW 357414B TW 084110491 A TW084110491 A TW 084110491A TW 84110491 A TW84110491 A TW 84110491A TW 357414 B TW357414 B TW 357414B
Authority
TW
Taiwan
Prior art keywords
heating
substrate
carrier
cooling
carrying
Prior art date
Application number
TW084110491A
Other languages
English (en)
Inventor
Masami Akumoto
Yasuhiro Sakamoto
Koji Harada
Original Assignee
Tokyo Electron Ltd
Tel Kyushu Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tel Kyushu Kk filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TW357414B publication Critical patent/TW357414B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
TW084110491A 1994-10-05 1995-10-05 Method and apparatus for heat-treating substrates TW357414B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26442494 1994-10-05

Publications (1)

Publication Number Publication Date
TW357414B true TW357414B (en) 1999-05-01

Family

ID=17402989

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084110491A TW357414B (en) 1994-10-05 1995-10-05 Method and apparatus for heat-treating substrates

Country Status (3)

Country Link
US (1) US5620560A (zh)
KR (1) KR100297285B1 (zh)
TW (1) TW357414B (zh)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
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TW317644B (zh) * 1996-01-26 1997-10-11 Tokyo Electron Co Ltd
JP3779393B2 (ja) * 1996-09-06 2006-05-24 東京エレクトロン株式会社 処理システム
US6198074B1 (en) * 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
US5849582A (en) * 1997-05-01 1998-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Baking of photoresist on wafers
JPH1154496A (ja) * 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
WO1999048139A2 (en) * 1998-03-18 1999-09-23 Applied Materials, Inc. Apparatus for reducing heat loss
US6108937A (en) * 1998-09-10 2000-08-29 Asm America, Inc. Method of cooling wafers
WO2000031777A1 (en) * 1998-11-20 2000-06-02 Steag Rtp Systems, Inc. Fast heating and cooling apparatus for semiconductor wafers
JP2000306973A (ja) * 1999-04-19 2000-11-02 Tokyo Electron Ltd 処理システム
JP3445757B2 (ja) * 1999-05-06 2003-09-08 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP3416078B2 (ja) 1999-06-09 2003-06-16 東京エレクトロン株式会社 基板処理装置
US6464789B1 (en) * 1999-06-11 2002-10-15 Tokyo Electron Limited Substrate processing apparatus
US6307184B1 (en) 1999-07-12 2001-10-23 Fsi International, Inc. Thermal processing chamber for heating and cooling wafer-like objects
US6474986B2 (en) 1999-08-11 2002-11-05 Tokyo Electron Limited Hot plate cooling method and heat processing apparatus
US6402401B1 (en) * 1999-10-19 2002-06-11 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
KR20010066153A (ko) * 1999-12-31 2001-07-11 황인길 급속 열처리 방법
US20020014702A1 (en) 2000-03-10 2002-02-07 Nazir Ahmad Packaging structure and method
JP3648129B2 (ja) * 2000-05-10 2005-05-18 東京エレクトロン株式会社 塗布現像処理方法及び塗布現像処理システム
CN1279577C (zh) * 2000-07-06 2006-10-11 应用材料有限公司 对基体进行热处理的方法
US6838115B2 (en) * 2000-07-12 2005-01-04 Fsi International, Inc. Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices
JP3535457B2 (ja) 2000-09-11 2004-06-07 東京エレクトロン株式会社 基板の熱処理装置
JP3910821B2 (ja) 2000-10-26 2007-04-25 東京エレクトロン株式会社 基板の処理装置
US6744020B2 (en) * 2001-01-04 2004-06-01 Tokyo Electron Limited Heat processing apparatus
EP1540259A2 (en) 2002-09-10 2005-06-15 FSI International, Inc. Thermal process station with heated lid
JP4137750B2 (ja) * 2003-09-17 2008-08-20 株式会社Ｓｏｋｕｄｏ 熱処理装置、熱処理方法および基板処理装置
US7384595B2 (en) * 2003-10-22 2008-06-10 Tokyo Electron Limited Heat-treating apparatus and heat-treating method
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7255747B2 (en) 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US20090139979A1 (en) * 2005-08-19 2009-06-04 Tokyo Electron Limited Placing table structure, method for manufacturing placing table structure and heat treatment apparatus
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
KR100679269B1 (ko) * 2006-01-04 2007-02-06 삼성전자주식회사 멀티 챔버형 반도체 제조 장치
US8322299B2 (en) * 2006-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster processing apparatus for metallization processing in semiconductor manufacturing
US7877895B2 (en) 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
US20080008837A1 (en) * 2006-07-10 2008-01-10 Yasuhiro Shiba Substrate processing apparatus and substrate processing method for heat-treating substrate
JP4999415B2 (ja) * 2006-09-29 2012-08-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに基板処理装置の用力供給装置及び基板処理装置の用力供給方法
JP5109376B2 (ja) * 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
JP2009182235A (ja) * 2008-01-31 2009-08-13 Tokyo Electron Ltd ロードロック装置および基板冷却方法
GB2471856A (en) * 2009-07-14 2011-01-19 Mantis Deposition Ltd Sample holder
JP5490741B2 (ja) * 2011-03-02 2014-05-14 東京エレクトロン株式会社 基板搬送装置の位置調整方法、及び基板処理装置
KR101376668B1 (ko) * 2012-06-22 2014-03-21 (주) 예스티 이중 냉매를 이용하는 가압 열처리장치
JP6964005B2 (ja) * 2018-01-09 2021-11-10 東京エレクトロン株式会社 熱処理装置、熱板の冷却方法及びコンピュータ読み取り可能な記録媒体
TWI685059B (zh) * 2018-12-11 2020-02-11 財團法人國家實驗研究院 半導體反應裝置與方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338636A (ja) * 1989-07-05 1991-02-19 Konica Corp ハロゲン化銀写真感光材料
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
JP2906103B2 (ja) * 1993-03-26 1999-06-14 東京エレクトロン株式会社 処理装置

Also Published As

Publication number Publication date
KR960015804A (ko) 1996-05-22
KR100297285B1 (ko) 2001-10-24
US5620560A (en) 1997-04-15

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