WO2001059815A3 - Method and apparatus for processing a microelectronic workpiece at an elevated temperature - Google Patents

Method and apparatus for processing a microelectronic workpiece at an elevated temperature Download PDF

Info

Publication number
WO2001059815A3
WO2001059815A3 PCT/US2001/004444 US0104444W WO0159815A3 WO 2001059815 A3 WO2001059815 A3 WO 2001059815A3 US 0104444 W US0104444 W US 0104444W WO 0159815 A3 WO0159815 A3 WO 0159815A3
Authority
WO
WIPO (PCT)
Prior art keywords
microelectronic workpiece
heat source
workpiece
microelectronic
elevated temperature
Prior art date
Application number
PCT/US2001/004444
Other languages
French (fr)
Other versions
WO2001059815A2 (en
Inventor
Robert A Weaver
Gregory J Wilson
Paul R Mchugh
Vladimir Zila
Original Assignee
Semitool Inc
Robert A Weaver
Gregory J Wilson
Paul R Mchugh
Vladimir Zila
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/501,002 external-priority patent/US6471913B1/en
Priority claimed from US09/733,608 external-priority patent/US6780374B2/en
Application filed by Semitool Inc, Robert A Weaver, Gregory J Wilson, Paul R Mchugh, Vladimir Zila filed Critical Semitool Inc
Priority to JP2001559043A priority Critical patent/JP2003524299A/en
Priority to EP01910554A priority patent/EP1254477A2/en
Priority to AU2001238149A priority patent/AU2001238149A1/en
Publication of WO2001059815A2 publication Critical patent/WO2001059815A2/en
Publication of WO2001059815A3 publication Critical patent/WO2001059815A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

An apparatus and method for processing a microelectronic workpiece at an elevated temperature. In one embodiment, the apparatus includes a workpiece support positioned to engage and support the microelectronic workpiece during operation. The apparatus can further include a heat source having a solid engaging surface positioned to engage a surface of the microelectronic workpiece with at least one of the heat source and the workpiece support being movable relative to the other between a first position with the microelectronic workpiece contacting the engaging surface of the heat source and a second position with the microelectronic workpiece spaced apart from the engaging surface. The heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to thermally process a selected material of the microelectronic workpiece when the microelectronic workpiece is engaged with the heat source. A heat sink can be positioned at least proximate to the heat source to cool both the heat source and the microelectronic workpiece.
PCT/US2001/004444 2000-02-09 2001-02-08 Method and apparatus for processing a microelectronic workpiece at an elevated temperature WO2001059815A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001559043A JP2003524299A (en) 2000-02-09 2001-02-08 Method and apparatus for processing microelectronic workpieces at elevated temperatures
EP01910554A EP1254477A2 (en) 2000-02-09 2001-02-08 Method and apparatus for processing a microelectronic workpiece at an elevated temperature
AU2001238149A AU2001238149A1 (en) 2000-02-09 2001-02-08 Method and apparatus for processing a microelectronic workpiece at an elevated temperature

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/501,002 2000-02-09
US09/501,002 US6471913B1 (en) 2000-02-09 2000-02-09 Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature
US09/733,608 US6780374B2 (en) 2000-12-08 2000-12-08 Method and apparatus for processing a microelectronic workpiece at an elevated temperature
US09/733,608 2000-12-08

Publications (2)

Publication Number Publication Date
WO2001059815A2 WO2001059815A2 (en) 2001-08-16
WO2001059815A3 true WO2001059815A3 (en) 2002-02-21

Family

ID=27053689

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/004444 WO2001059815A2 (en) 2000-02-09 2001-02-08 Method and apparatus for processing a microelectronic workpiece at an elevated temperature

Country Status (5)

Country Link
EP (1) EP1254477A2 (en)
JP (1) JP2003524299A (en)
AU (1) AU2001238149A1 (en)
TW (1) TW495885B (en)
WO (1) WO2001059815A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005014513B4 (en) * 2005-03-30 2011-05-12 Att Advanced Temperature Test Systems Gmbh Device and method for tempering a substrate, and method for producing the device
MD3512C2 (en) * 2005-10-28 2008-09-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for magnesium diboride obtaining
MD175Z (en) * 2008-02-25 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for the obtaining of superconducting films
WO2009149211A2 (en) * 2008-06-03 2009-12-10 Vserv Technologies Corp System for simultaneous tabbing and stringing of solar cells
US8496790B2 (en) * 2011-05-18 2013-07-30 Applied Materials, Inc. Electrochemical processor
TW201426844A (en) * 2012-12-28 2014-07-01 Metal Ind Res & Dev Ct Manufacturing method of micro-channel structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979464A (en) * 1987-06-15 1990-12-25 Convac Gmbh Apparatus for treating wafers in the manufacture of semiconductor elements
WO1991004213A1 (en) * 1989-09-12 1991-04-04 Rapro Technology, Inc. Automated wafer transport system
US5306895A (en) * 1991-03-26 1994-04-26 Ngk Insulators, Ltd. Corrosion-resistant member for chemical apparatus using halogen series corrosive gas
JPH1083960A (en) * 1996-09-05 1998-03-31 Nec Corp Sputtering device
US5802856A (en) * 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
WO1999045745A1 (en) * 1998-03-05 1999-09-10 Fsi International, Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
EP0964433A2 (en) * 1998-06-11 1999-12-15 Shin-Etsu Chemical Co., Ltd. Multiple-layered ceramic heater

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979464A (en) * 1987-06-15 1990-12-25 Convac Gmbh Apparatus for treating wafers in the manufacture of semiconductor elements
WO1991004213A1 (en) * 1989-09-12 1991-04-04 Rapro Technology, Inc. Automated wafer transport system
US5306895A (en) * 1991-03-26 1994-04-26 Ngk Insulators, Ltd. Corrosion-resistant member for chemical apparatus using halogen series corrosive gas
US5802856A (en) * 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
JPH1083960A (en) * 1996-09-05 1998-03-31 Nec Corp Sputtering device
WO1999045745A1 (en) * 1998-03-05 1999-09-10 Fsi International, Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
EP0964433A2 (en) * 1998-06-11 1999-12-15 Shin-Etsu Chemical Co., Ltd. Multiple-layered ceramic heater

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 08 30 June 1998 (1998-06-30) *

Also Published As

Publication number Publication date
TW495885B (en) 2002-07-21
WO2001059815A2 (en) 2001-08-16
JP2003524299A (en) 2003-08-12
EP1254477A2 (en) 2002-11-06
AU2001238149A1 (en) 2001-08-20

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