TW495885B - Method and apparatus for processing a microelectronic workpiece at an elevated temperature - Google Patents

Abstract

An apparatus and method for processing a microelectronic workpiece at an elevated temperature. In one embodiment, the apparatus includes a workpiece support positioned to engage and support the microelectronic workpiece during operation. The apparatus can further include a heat source having a solid engaging surface positioned to engage a surface of the microelectronic workpiece with at least one of the heat source and the workpiece support being movable relative to the other between a first position with the microelectronic workpiece contacting the engaging surface of the heat source and a second position with the microelectronic workpiece spaced apart from the engaging surface. The heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to thermally process a selected material of the microelectronic workpiece when the microelectronic workpiece is engaged with the heat source. A heat sink can be positioned at least proximate to the heat source to cool both the heat source and the microelectronic workpiece.

Description

495¾ ^ 495¾ ^ A7 B7 Amendment V. Description of the Invention ([Field of Invention] The present invention is generally related to a method and apparatus for processing microelectronic workpieces at high temperatures. [Background of the Invention] In the semiconductor wafer During the fabrication of semiconductor integrated circuits and other microelectronic objects obtained from microelectronic workpieces, it is often necessary to provide multiple thin metal layers on a substrate as interconnecting metal objects that are electrically coupled to each other on the integrated circuit. .Aluminum has traditionally been used for this connection, but copper metal objects are now recognized as suitable. Copper connections do help reduce multiple problems encountered in current aluminum technology. Microelectronics Manufacturing The industry seeks to use copper as an interconnect metallization through damascene and / or patterned sheet metal plating processes, where holes (such as channels), trenches and other recesses will be used to produce the desired copper pattern. In a typical damascene process, a dielectric layer is applied to the wafer and a plurality of recesses are formed on the wafer. A metal seed source layer and a metal seed layer are then deposited on the dielectric layer. Barrier / adhesive layer and generate a plurality of recesses. The metal seed source layer is used to conduct current in the subsequent metal plating step. Preferably, the metal seed source layer is an extremely thin metal, which can be used It can be applied in one of many manufacturing methods. For example, a physical metal seed layer can be obtained by a physical vapor deposition or chemical vapor deposition process to produce a thin layer with a thickness of about 1000 angstroms or slightly thinner. The metal seed source layer can also be made of copper, gold, nickel, palladium and most other metals. The metal seed source layer corresponds to the surface of the wafer, including a plurality of recesses, or It is the characteristics of other devices that sink or rise (please read the notes on the back before filling this page)% Order --------- line! ^ 1 1 · ϋ 1 «n HI _ This paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 495 ^ Pf year / h amend A7 Β7 second series 3¾ instructions ((Please read the precautions on the back before filling this page) on single copper plating In the damascene process, two plating operations are generally used. First, a copper layer is plated on the A blanket layer is formed on the source layer. The blanket layer can fill trenches or other recesses that define horizontal connection wiring in the dielectric layer. Then the first blanket layer is planarized (for example, Mechanical planarization) to remove portions that extend above the trenches so that the trenches are filled with copper. Then a second dielectric layer is provided to cover the surface of the wafer and Recessed channels are constructed in the electrical layer. These recessed channels are arranged so as to align with some existing trenches. Then, a second source layer and a second copper blanket layer are applied to the surface of the second dielectric layer. 'To fill a plurality of channels. Click here' These channels can provide the vertical connection between the original horizontal interconnection layer and the horizontal interconnection layer applied subsequently. The electrochemical deposition of copper films has become a highly efficient production process. It is an important process step in electronic products. On the other hand, trenches and channels can be etched simultaneously in the dielectric layer in a process commonly known as "dual damascene". Then, as mentioned above, these features are treated with the barrier layer, seed source layer, and blanket / blanket layer. These thin layers will simultaneously fill multiple trenches and channels that sink to the bottom of the trench. Then the excess material is discarded as described above to generate a plurality of built-in conductors. Due to the metallic structure, the mechanical properties of copper metallization are extremely important. This is particularly significant when it comes to the effects on the mechanical properties of copper metallization during the chemical mechanical polishing process. The grain size variability of copper thin film between wafers and wafers will negatively affect the polishing rate of chemical mechanical treatment and the final surface of the polished copper structure after the polishing. The paper size applies to Chinese National Standards (CNS) A4 specifications (210 X 297 mm) 495885 ff 6 6% of the day is positive B7 ~ nr complement without: '" Wufa Mingming () uniformity. It would be highly desirable to have large grain size and low grain size variability in the copper thin film. The electronic properties of copper metallization are also extremely important for the performance of related microelectronic devices. If copper metallization exhibits excessive and eventually results in electron removal of open-circuit or short-circuit conditions at one or more metallization features, then these devices may fail. One factor that has a significant effect on the electron removal resistance of sub-micron metal lines is the grain size of the deposited metal. The reason is that the energy of the grain boundary removal phenomenon is much lower than that of the inter grain removal. In order to achieve the desired electronic characteristics of the copper metallization, the grain structure of each deposited blanket layer is changed by an annealing process. This annealing process has traditionally been viewed as requiring a separate process step in which a semiconductor wafer is subjected to a high temperature of about 400 degrees Celsius. Currently, there are only a few available annealing devices that are generally stand-alone batch units, and are typically designed to perform batch processing of wafers placed on wafer racks. A unitary wafer annealing apparatus may be, for example, U.S. Patent No. 6,136,163, and its owner is disclosed by Cheung. The device includes a chamber body enclosing a cooling plate therein, and a heater plate located below the cooling plate. The heater plate is then enclosed and surrounded by a heater and a floating plate. The floating plate includes supporting pins that can support the wafer by the protruding frame to support the heater and the heater plate. The support pins can be moved up to move the wafer closer to the cooling plate, and down to move the wafer closer to or against the heater plate. A potential disadvantage of this device is that the chamber body is enclosed with a large volume, which is filled with gas and / or processing gas or ____ ^ ____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling this page)

· N 1 · ϋ n ϋ en an I nnnnnn ϋ flu in ϋ · ϋ n I nn I— I nnnnn ϋ I 495885 brigade :: i ^ — person, Π 6 pieces of correction., * A7, supplement 1 each , ★ 〆v-«— * 5. Invention Description () will be extremely expensive and time-consuming. Another potential disadvantage is that the heater may not be able to efficiently transfer heat to the heater plate. Yet another potential disadvantage is that after completion of the heating phase of the annealing process, the heater plate may continue to heat the wafer, or thus limit the efficiency of the cooling plate. Another unitary wafer device for the field of lithography can be found in U.S. Patent No. 5,651,823, and its owner is disclosed by Parodi et al. This device includes heating and cooling units located in individual chambers to heat and cool the thin photoresist layers. According to this, the device may not be suitable and / or excessively time-consuming for application in the annealing process, because the wafer must be placed in the heating chamber ', and then the heating chamber is removed from the annealing chamber one by one and placed in the cooling chamber Body. In addition, the transfer arm that moves the wafer from one chamber to the next, usually does not have the same temperature as the wafer when it contacts the wafer, thus causing a temperature gradient on the wafer. , Will adversely affect the uniformity of sensitive heat treatment process. [Inventive summary] The present invention is directed to a method and apparatus for processing microelectronic workpieces at high temperatures. An apparatus according to an embodiment of the present invention includes a work piece holder that can be placed to engage and support the microelectronic work piece during operation. The device may further include a heat source having a solid bonding surface and placed to bond to a surface of the microelectronic workpiece. The heat source may further include a heat generator directly attached and / or integrated with the heat source. At least one of the heat source and the workpiece holder can be moved relative to the other at a first position where the microelectronic workpiece contacts the heat source joint surface, and the microelectronics ___ _2_ This paper size applies to Chinese national standards (CNS ) A4 size (210 x 297 mm) " (Please read the notes on the back before filling this page) · nn ϋ nn ϋ · ϋ I ϋ 1 IH -1 · n 1 nnnni— n II I n 1 nnnnnn · 495885 A7 B7 V. Description of the Invention (s) The sub-workpiece is placed between the second positions of the joint surface. The heat source is dimensioned, and when the microelectronic workpiece is joined to the heat source, heat is transferred to the microelectronic workpiece at a rate sufficient to heat treat (i.e., a low temperature annealing procedure) the selected material of the microelectronic workpiece. In a further feature of the invention, the device may include a workpiece holder placed to engage and support the microelectronic workpiece, a heat source placed at least close to the microelectronic workpiece, and a row of heat sinks placed nearest At the heat source to cool the heat source. The heat sink can be coupled to an initiator sufficient to couple to the source of pressurized coolant to move the initiator and cool the heat sink. In addition, the heat removal tank may also be a first heat extraction tank, and the device may further include a second heat extraction tank placed closest to the first heat extraction tank to cool the first heat extraction tank. The first row of heat sinks may be moved relative to the heat source and the second row of heat sinks at a first position where the first row of heat sinks is joined to the heat source to cool the heat source, and is joined to the first row of heat sinks at The second heat sink is used to cool the second position of the first heat sink. In a further feature of this embodiment, the heat source may be placed on the first row of heat sinks. In a further feature of the present invention, a plurality of heat treatment chamber bodies can be placed one by one to heat-treat a plurality of microelectronic workpieces independently. These heat treatment chambers may have a modular structure, and the lower surface of an upper chamber defines the upper surface of the lower chamber. In a further feature of the present invention, the device may include a workpiece holder configured to support a microelectronic workpiece, and a heat source for placing the microelectronic workpiece adjacent to the workpiece holder. The heat source can have a configuration that can be transmitted at a first rate per unit area of the microelectronic workpiece in a low temperature process. 8 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297). Mm) (Please read the precautions on the back before filling this page) r. · Binding il ------- line 'Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 495885 A7 ------ B7 5 2. Description of the Invention (b) Heat is applied to the first ~ area of the microelectronic workpiece. The heat source may further include a configuration configured to transmit heat to a second area of the microelectronic workpiece at a second rate of a unit area of the microelectronic workpiece in a low temperature process, and the The second rate is higher than the first rate per unit area. In a further feature of the present invention, the device may include at least one first processing chamber body and at least one first processing chamber body. The first processing chamber body may be configured to apply a material to a microelectronic workpiece, etch a material from the microelectronic workpiece, wet the microelectronic workpiece, and / or dry the microelectronic workpiece. The second processing chamber body may have a workpiece support and a heat source, and at least one of the workpiece support and the heat source may be moved relative to the other to join the contact surface of the heat source to the microelectronic workpiece. A workpiece transfer unit can be placed adjacent to at least one of the chambers, and the microelectronic workpiece can be engaged and moved. In a specific embodiment, the first chamber body can be configured to apply a copper material to the microelectronic substrate, and the second chamber body can be configured to anneal the copper material. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics The present invention also refers to a method for heat treating a microelectronic workpiece. In a feature of the invention, the method may include bonding the microelectronic workpiece to a solid heat transfer surface of a heat source, and extending heat to the heat source with a heat generator directly attached and / or integrated with the heat source. And at a rate sufficient to heat treat the selected material of the microelectronic workpiece (such as in a low temperature process), transfer heat from its solid surface to the microelectronic workpiece. The method may further include cooling the microelectronic workpiece and removing the microelectronic workpiece from the solid surface. In a further feature of the present invention, the method may further include joining a cap that is placed adjacent to one side of the microelectronic workpiece to support the 9 paper standards that are compatible with Chinese National Standard (CNS) A4 specifications (21〇X 297 mm) 495885 A7 ____B7 V. Description of the invention (Ί) (Please read the precautions on the back before filling this page) The solid heat transfer surface is placed near the substrate on the opposite side of the microelectronic workpiece A base to at least partially enclose the microelectronic workpiece, wherein the microelectronic workpiece is placed between the cap and its base. The method may further include providing an erasing fluid to an area of the microelectronic workpiece adjacent to the oxidation medium to erase the area. In another feature of the invention, the method may include transferring heat to a certain area of the microelectronic workpiece at a unit area rate, and the unit area rate is different from the rate of transferring to a second area of the microelectronic workpiece. In yet another feature of the invention, the method may include using a resistance heater to heat the solid heat transfer surface and shifting the heater connection by adjusting the size of a connector attached to the terminal. Due to the loss of thermal conductivity at the terminals, resistance heat is generated. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a method according to another feature of the present invention, which may include providing a second part having a first part, adjacent to the first part, and located in the first part The first annealing chamber body of the first cavity between the second part and the second part constitutes a plurality of chamber bodies for heat treating a microelectronic workpiece. The first cavity is configured to receive a single microelectronic workpiece. The method may further include positioning a third portion adjacent to the second portion, and the second and third portions may define a second cavity therebetween configured to receive another microelectronic workpiece. . The method may further include placing a first heat source in the first cavity and a second heat source in the second cavity, and each heat source is configured to heat the microelectronic workpiece according to a low-temperature process. [Brief description of the drawings] Figures 1A-1G illustrate various methods for depositing metals on microelectronics. 10 Paper sizes are applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 495885 A7 B7. 5. Description of the invention ( Also) The steps in the microstructure on the surface of the workpiece, this metal structure is suitable for the annealing treatment in a thermal reactor according to an embodiment of the present invention; Figures 2A-2D are thermal reactions constructed according to two embodiments of the present invention A schematic block diagram of the device; Figures 3A-3F are cross-sectional views of further embodiments of thick film heaters that can be used for the heat transfer unit shown in Figures 2A-2D; Figure 3Q: gj is a thick type of Figure 3A-3F Various elements of the thin film heater architecture are flat-toothed; β74 ~? Figure: According to the embodiment of the present invention, a thick film heater and a row of heat sinks can be combined with each other in the sending unit; Figure 8 illustrates that many thermal reactors of the type shown in Figures 2A-2D can be integrated into a single annealing station; Figure 9 illustrates an embodiment of a programmable control system that can be used to coordinate the operation of a thermal reactor; Figure 10 is According to this Fig. 11 is an exploded view of a heat source according to an embodiment of the present invention; Fig. 12 is a partial perspective view of a heat source according to another embodiment of the present invention; Plan view of a resistive heat source according to another embodiment of the invention. Figure I4 is a plan view of a heat source having a plurality of heating areas according to another embodiment of the invention. Plan of the heat source; 11 (Please read the precautions on the back before filling out this page) Yan Liang, Intellectual Property Bureau, Ministry of Economic Affairs, Employee Consumption Cooperative, printed on paper This paper applies Chinese National Standard (CNS) A4 (210 X 297 mm) 495885 A7 B7 V. Description of the invention (1) Figure 16 is a side view of an electronic connector according to another embodiment of the present invention (please read the precautions on the back before filling this page) Figure 17 is a workpiece according to an embodiment of the present invention Partial exploded view of the bracket; FIG. 18 is a partial exploded view of a cold source according to an embodiment of the present invention; FIG. 19 is a heat treatment micro-electric unit according to an embodiment of the present invention Fig. 20 is a partial perspective view of a part of the device shown in Fig. 19; Fig. 21 is a plan view of a reversed part of the device shown in Figs. 19 and 20; and Fig. 22 is another view of the device according to the present invention. Example, a schematic partial cross-sectional view of a part of a device for heat treating microelectronic workpieces; FIG. 23 is a partial schematic view of a system including a heat treatment chamber body according to an embodiment of the present invention; FIG. 24 is a view containing a heat treatment according to another embodiment of the present invention Part of the chamber system. [Description of component symbols] Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 400. Assembly 405. Area 410. Thin layer of dielectric material 415. Channel 420. Channel 423. Barrier layer 425. Source layer 430. Side wall 12 books Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495885 V. Description of invention (called) Printed by A7 _B7 440. Thin layer 500. Thermal reactor 505. One assembly 510. Second assembly 515. Starter 520. First assembly carrier 525. Element 530. Lower part 540. Reciprocating extension arm 545. Upper part 550. Second assembly carrier 555. Heat treatment chamber body 560. Heat transfer Unit 565 Heater 569. Volume 570. Exhaust tank 580. Gas injection machine port 585. Gas exhaust machine 600. High impedance layer 601. Dielectric glaze layer 601a. Dielectric plating layer 603. Vacuum distribution circuit channel 604 High resistance Characteristic 605. Ceramic substrate layer 13 -------: -------- (Please read the precautions on the back before filling in this page). China National Standard (CNS) A4 Specification (210 X 297 mm) 495885 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of invention (v \) 606. Hole 607. External vacuum supply 608. (Optional) Vacuum supply 609. Hole 611. Concentric circular isolation area 612. Coolant injection machine port 613. Isolation area 614. Isolation area 617. Coolant discharge machine port 633. Insulation material 700. Bearing unit 710. Room unit 715. High level horizontal partition wall 720. Lower horizontal partition wall 725. Side wall 730. Automatic door or delivery slot opening 900. Control system 905. Programmable controller 910. Automatic gas flow meter / valve system 915. Reactor temperature sensing / supply system 920 Component drive system 925. Cooling assembly system 930. Safety shutdown component 1000. Device 14 (Please read the precautions on the back before filling out this page) Binding-------- Thread This paper size applies to Chinese national standards ( CNS) A4 specification (210 X 297 mm) 495885 V. Description of the invention (β) Printed by A7 _B7 1002. Device bracket 1003a. Upper chamber 1003b. Lower chamber 1004. Vertical frame 1005. Receiving channel 1006. Tab 1007. Starter 1008. Room volume 1010. Base 1020. Room cover 1021. Room cover starter 1022. Clean fluid channel 1023. Clean fluid port 1024 Clean fluid holes 1025. Clean fluid diffusion plate 1026. Clean fluid exit opening 1027. Folding surface 1028a. Connection aisle 1028b. Connection aisle 1028c. Connection aisle 1030. Cover 1030 Cover 1040. Heat source 1041 . Vacuum hole 15 (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 495885 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Explanation (〇)) A7 _B7 1042. Heater vacuum machine port 1043. Vacuum aisle 1044. Heat source support 1045. Coupling machine port 1046a. Ceramic plate 1046b. Ceramic plate 1046c. Ceramic plate 1047. Vacuum channel 1048. Calibration hole 1049 Calibration angle pin 1050. Second row of heat sinks 1051. Cooling assembly cover 1054. Cooling channel 1060. First row of heat sinks 1061. Heat sink starter 1063. Vacuum channel 1064. Empty channel 1065. Vacuum machine port 1066. Thermal pad 1067. Joining surface 1070. Workpiece support 1080. Electronic component 1081. Contact pad 1082. Internal circuit • 丨 -------------- (Please read the precautions on the back before filling this page) Order ——.------ Line ·: This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 495885 5. Description of the invention (0 \) Printed by A7 _B7 1083. External circuit 1084. Electronic connector 1085. Contact surface 1086. Exhaust port 1087. External area 1088. Internal area 1138. Vacuum groove 1139. Channel Cover 1140. Heat source 1145. Coupling port 1146. Ceramic plate 1147. Vacuum channel 1240. Heat source 1249. Cell 1281. Room side wall 1282. Internal circuit (1282a, 1282b) 1283. External circuit (1283a, 1283b) 1287. Outer area 1287a. Central portion 1287b. Outer 1287c on each side of the central area surrounding area 1287a. Contact area adjacent to the heat source contact pad 1287. Outer area 1288. Inner area 17 Paper Standards apply to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 495885 A7 _B7_ V. Description of the invention (6) 1288% area 1900. Device 1903. Heat treatment chamber body 1903a. Upper chamber body 1903b. Lower chamber body 1910 Base 1920. Room cover 1921. Room cover starter 1922. Fluid removal channel 1924. Fluid removal hole 1927. Folding surface 1930. Cover 1940. Heat source 1944. Heat source bracket 1950. Second row of heat sink section 1954 Cooling channel 1955. Opened by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Printed 1956. 〇-ring part 1957a. Cooling channel entering machine 1957b. Cooling channel leaving machine 1957b 1958. Cooling supply line 1959. Cooling line 1960 The first row of heat sinks 1961. The heat sink starter This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 495885 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs () 1962. Vacuum supply channel 1963. Vacuum channel 1964. Vacuum channel 1966. Starter supply channel 1978. Clearance cavity 1990. Exhaust tank 2003. Heat treatment chamber body 2200. Device 2203a. Upper chamber Body 2203b. Lower part of the body 2210. Base 2220. Cover 2221. Cover starter 2222. Clean fluid passage 2224. Clean fluid holes 2227. Fold surface 2230. Cover 2250. Auxiliary heat sink 2260. Exhaust heat sink 2261. Exhaust heat sink starter 2264. Expandable volume 2266. Starter supply aisle 2300. System 2300 2310a. Wetting / drying station chamber 19 This paper is in accordance with China National Standard (CNS) A4 specifications (210 X 297 mm) 495885 A7 B7 V. Description of the invention (A) 2310b. Electroplating platform or chamber body 2312. Input / output area 2315. Heat treatment chamber body 2320. Transmission mechanism 2325. Central rail 2400. System 2440. Exclusive mechanical mechanism 2445. Intermediate stage gate / area I ---------- install --- (Please read the precautions on the back before filling this page) [Detailed description of the invention] To illustrate the present invention, microelectronic workpieces It is defined as including a workpiece composed of a substrate on which microelectronic circuits or elements, data storage elements or thin layers, and / or micromechanical elements are placed or constructed. Although the present invention can be applied to a wide range of products, the present invention is specifically described in connection with the production and application of connection structures built on semiconductor wafers during the production of integrated circuits. Furthermore, although the present invention can be applied to a wide range of metal and metal alloys, as well as a wide range of high temperature processes, the present invention is specifically described in terms of an annealing process for electroless deposition of copper and copper alloys. 'A device according to an embodiment of the present invention includes a rapid thermal annealing chamber configured and configured to anneal an applied copper film at a low temperature. That is, as used herein, the term low temperature means that the temperature is lower than the temperature at which they will degrade or damage the dielectric material in the microelectronic workpiece. For example, in one embodiment, the rapid thermal annealing chamber can be performed at a temperature of about 450 degrees Celsius or lower. 20 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Order:-丨 line) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 495885 A7 ______ B7 V. Description of invention (π) In another In an embodiment, the chamber body may anneal other materials, and / or perform other low-temperature functions, such as redirecting flux and / or baking a photoresist layer. In another embodiment, the chamber body can be configured to anneal (or perform other functions) the metal structure at other temperatures. Before the thin metal layer or structure can be annealed in a thermal reactor corresponding to an embodiment of the present invention, the thin metal layer or structure is first sunk on the surface of a microelectronic workpiece. The metal can be deposited by electronic chemical deposition techniques (such as electroless or electrolytic deposition operations), vacuum techniques (such as physical vapor deposition (PVD) or chemical vapor deposition (CVD)), or other techniques. Figures 1A-1G illustrate a method of filling channels and channels formed on the surface of a microelectronic workpiece. FIG. 1A illustrates an assembly 400 having regions 405 connected by copper metallization. FIG. 1B illustrates a thin layer 410 of a dielectric material, which may be a silicon dioxide or a low-K dielectric material, and is sunk on a second assembly 400 contained at a region 405. Through the photoresist process and reactive ion uranium etching, etc., the selective part of the thin layer 410 is removed to form, for example, a trench 415 and a channel 420, and a copper metal is to be deposited in it. Into. The appearance of the final structure is shown in FIG. 1C, where the channel 420 is stacked on the connection area 405 and the trench 415 is stacked on the channel 420. The connection region 405 may be a metallized feature on the substrate. That is, as shown in FIG. 1D, a barrier layer 423 and a seed source layer 425 can be deposited on the surface of the dielectric layer 410. The barrier layer 423 may be, for example, molybdenum or titanium nitride. When the structure 405 is susceptible to contamination by copper or the source layer metal, that is, when the source layer metal or copper is indeed prepared, it passes through the dielectric layer 410 and contaminates the microelectronic circuit. For other parts, 21 paper sizes are generally applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) (please read the precautions on the back first and fill out this page)! · ★-丨 Line · Ministry of Economy Wisdom Printed by the Consumer Affairs Cooperative of the Property Bureau 495885 Α7 Β7 V. Description of Invention (ν ') The barrier layer 423 is used. According to this, the barrier layer 423 should be formed along the trenches and channels to have a sufficient screen thickness, and has the function of blocking diffusion. The barrier layer 423 can also be used as an adhesion layer to facilitate the connection effect between the source layer 425 and the dielectric layer 410. However, if the structure 405 is free from such contamination and has sufficient bonding force, the dielectric layer 410 itself is suitable as a barrier layer, so that the individual barrier layer 423 is not necessary. The seed source layer 425 may be, for example, a copper layer or another conductive metal layer, and preferably has a thickness of at least 2000 angstroms at its thinnest portion. The trench 415 and the side wall 430 of the channel 420, and the bottom of the channel 420, should be covered with the source layer 425 and the barrier layer 423 to facilitate subsequent electronic chemical copper deposition steps. The source layer 425 can be deposited by, for example, a CVD or PVD process. The microelectronic workpiece with seed layer 425 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs can be processed by the subsequent electrochemical copper deposition process. This electronic chemical copper deposition process can be performed to form the nuclei positions of various copper deposits', and build a grain size that is substantially smaller than the characteristic size of the channel 420 and the trench 415. An exemplary structure having such characteristics can be shown in FIG. 1E, wherein the thin layer 440 is a copper metallization deposited by an electrochemical copper deposition process. In another feature of the procedure, the orientation of the grains can also be such that the [Π1] crystal plane direction is perpendicular to the plane of the exposed copper layer, that is, as already published PCT application WO The disclosure of 99/40615 is hereby incorporated by reference as a whole. As shown in FIG. 1E, a copper metallization 440 formed by an electrochemical copper deposition process is deposited on the source layer 425, and a distance is extended on the surface of the dielectric layer 410. Due to the need to include the characteristics of metallization 22 ^ Paper size applies the Chinese National Standard (CNS) A4 specification (210 χ 297 public love) '49 ^^ 5 --- Amend ff year "] / V :; A7 / l \ [ __B7 _ 5. The description of the invention () is only the channel 420 and the trench 415, so excess copper above the dielectric layer 410 must be removed. Chemical mechanical polishing technology can be used to remove the high Excess copper on the dielectric layer 410. An exemplary structure that can perform this removal operation can be shown in Figure 1F. After removal, it can be continued, for example, by depositing a layer on the entire wafer surface. The capping barrier layer 445, or the processes listed in FIGS. 1A-1F are repeated without the capping barrier layer 445, so that the trench 415, which is now filled with copper metallization, can correspond to the structure 405. This will come into contact with more copper metallization. The process shown in Figures 1A-1G may indicate that the channels 420 and the trenches 415 are different components. However, it should be understood that these structures can usually be based on The single mosaic process described above is constituted and enriched individually. In this case, the first is based on the figure 1A-1F, the channel 420 is plated, and then the channel 420 is plated, and then the channel 415 is plated according to the steps described in FIGS. 1A-1F. In fact, during the process of plating the channel 415 The channel 420 will correspond to the structure 405. The thermal processor and related methods of this disclosure are suitable for both single damascene and multiple grain processes. 'The comparison of Figures 1E and 1F can show the grain size of the copper metallization 440 An increase has indeed occurred. This change in grain size can be accelerated according to an embodiment of the present invention by subjecting the microelectronic workpiece to an annealing process in a thermal reactor as described below. In this annealing process, The wafer will be elevated to a temperature higher than the ambient temperature conditions normally found in a clean inner chamber. This annealing process can be at 250-300 degrees Celsius or slightly lower, or at least compared to the dielectric layer The temperature at which the material begins to deteriorate is low. When the dielectric layer is made of a low-K type dielectric material, ____._ 7 ^ ____ This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read first Note the surface to fill out this page)% *

I-OJ · nmn · ϋ ϋ n ϋ 1 I · _ϋ nnnnn ϋ 1_1 -I ϋ n i_n ϋ -ϋ nnnnn I 495885 A7 B7 V. Description of the invention (τ) It is particularly advantageous to perform annealing at these temperatures, because this kind of When the temperature exceeds 300 degrees Celsius, the material will deteriorate. It is particularly advantageous to perform annealing before performing chemical mechanical planarization (CMP). This CMP involves the use of mechanical and chemical forces to remove copper (or other materials) that are indeed excessive deposits for each joint (see Figures 1E and 1F). According to an embodiment of the present invention, the accelerated annealing process can stabilize copper by significantly reducing the amount of time required to perform thin film recrystallization operations (i.e., transforming many tiny grains into a few large grains) The grain structure of the film. According to the present invention, this accelerated annealing procedure can also reduce the variability of the grain size distribution, which would occur in a self-annealing procedure at room temperature. The CMP polishing rate, or removal rate, has indeed been observed to vary as a direct result of the grain size of the copper film. Initially, small grain films (ie, with grain boundaries) have indeed been observed to polish more slowly than large grain films (at least for some specific CMP slurries). Similarly, the uniformity of CMP polishing has indeed been observed to vary as a direct result of the uniformity of the grain size of the copper thin film. Therefore, according to the embodiment of the present invention, this accelerated annealing process can also reduce the time required for the CMP process, while at the same time improving its uniformity, predictability and repeatability. Figures 2A and 2B illustrate a thermal reactor, shown as 500, constructed according to an embodiment of the present invention. The thermal reactor 500 may include a first assembly 505, a second assembly 510, and one or more starters 515 both connected to provide relative movement between the first assembly 505 and the second assembly 510. The configuration and configuration of the thermal reactor 500 shown in the figure can occupy less space than some traditional configurations, which can improve the reactor. 24 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page) Binding ---, ------- line; printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 V. Description of Invention (vV) Flexibility. In a listed embodiment, the second assembly 5110 may include one or more components 525 that have been adapted to receive a single-workpiece W from an automatic workpiece transfer mechanism, which may be like having It is necessary to grasp and release the robot arm of the end clamp of the workpiece W. In this regard, the second assembly 510 may include a second assembly carrier 550 having an upper edge and one or more workpiece holder assemblies 525 may be extended therefrom. The workpiece support assembly 525 can take a variety of forms. For example, a single workpiece support assembly 525 may be constituted as a ring-shaped object having continuous drawing characteristics and having a lip or the like, and the workpiece W may be transferred on the part by the workpiece transfer mechanism. Alternatively, a plurality of workpiece holder assemblies 525 can be formed according to the type of discrete fingers, and are arranged at various angular positions corresponding to the peripheral edge of the workpiece W. These angular positions are selected to ensure that the workpiece conveying mechanism is sufficient. Got to pick it up. Other workpiece holder configuration methods can be adapted to the application. The assembly 510 may have an internal area, and a heat transfer unit 560 is provided therein. The heat transfer unit 560 may further include a heater 565 and a row of heat sinks 570, and their operation modes may be set as described later. In some features of this embodiment, the heater 565 preferably has a relatively low-temperature thermal mass, so that its temperature response time will be within a reasonably defined period of time. 'It is indeed fast enough to heat treat the workpiece W. . In a further feature of this embodiment, the heat removal tank 570 preferably has a relatively high thermal mass compared to the heater 565, so that the heat removal tank 570 can cool the heating in a reasonably defined period of time. 565 (as set later). In a further feature of this embodiment, the heat capacity of the heat sink 570 is 25 (please read the precautions on the back before filling this page) -------- Order ---, ------ * 5 ^. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 495885 A7 B7 V. Description of the invention) May be larger than the heater 565 and the workpiece The sum of the heat capacities of both. The heat removal tank 570 may also include a highly thermally conductive material, such as copper. That is, as used herein, the term thermal mass refers to the product of material density and specific heat, and the term thermal capacity refers to the product of thermal mass and material volume. That is, as mentioned above, the actuator 510 can provide relative movement between the first assembly 505 and the second assembly 510. In the described configuration, the initiator 510 is connected to move the first assembly 505 back and forth to engage the second assembly 510. In more detail, the starter 510 may include a lower portion 530, which is aligned with the second assembly 510 through a fixed position, because the two are already positioned on a common layer board. The reciprocating extension arm 540 can extend from the upper portion 545 of the starter 515 to be engaged with the first assembly 505. The starter 515 can be configured to drive the reciprocating extension arm 540 and the first assembly 505 to move the workpiece W into the second assembly 510 using an automatic workpiece transfer mechanism (not shown). A position that is adjacent to the first assembly 505 and the second assembly 510 after being placed, and forms a space for processing the workpiece W or a second position of the chamber body. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In actual operation, the starter 515 will initially drive the first assembly 505 to the first position, as shown in FIG. 2A. After reaching this position, the workpiece W can be placed on the workpiece support assembly 525 of the second assembly 510 using an automatic workpiece transfer mechanism, such as an artificial robotic arm with an end clamp that holds the workpiece W. Once the workpiece W has been placed on the workpiece support assembly 525, the starter 515 can drive the first assembly 505 toward the second assembly 510 to a second position, as shown in FIG. 2B. The workpiece holder assembly 525 will be in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm).

It is appropriately transferred to the first assembly 505 through contact with the lower surface of the first assembly 505 or the activation operation of the force. That is, as shown in FIG. 2B, the work W is directly sunk on the surface of the heat transfer unit 560, and this is heat-treated here. Generally speaking, the upper surface of the workpiece W will be the device side of the workpiece, while the lower surface of the non-device, workpiece W will be placed in contact with the upper surface of the heat transfer unit 560. Or, the direction of the workpiece W may be the reverser. To ensure that the workpiece W is placed on the upper surface of the heat transfer unit 560 during processing, the heat transfer unit 56 may include one or more pores connected to a vacuum source (described in detail later). The true air source may suck the lower surface of the workpiece W relative to the upper surface of the heat transfer unit 560. At the position shown in FIG. 2B, the lower part of the first assembly carrier 520 may be joined to the upper part of the second assembly carrier 550 to form a heat treatment chamber body 555, which may or may not be substantially airtight. When using the thermal reactor 500, that is, as here, to anneal the workpiece, the heat treatment chamber body 555 can be continuously cleaned with an inert gas, thereby minimizing the water $ of any oxidizing medium because it or The undesirable oxide formed with copper is beneficial to this net removal operation, and the first assembly may be provided with one or more gas injection ports 580 and one or more gas exhaust ports. 585 ° $ The gas injection port 580 is opened and folded inside the support body 52, and the person will open to place many holes _ which penetrate the lower surface of the support body 52. The gas mixture particularly suitable for reducing the oxidizing medium in the processing chamber body 555 includes a gas composed of nitrogen or hydrogen (5% hydrogen / 95% argon). The inert gas treatment environment can prevent the film surface of the workpiece W from being oxidized at high temperature. (Notes on the back then fill out this page)

P · Line · 495885 A7 B7 V. Description of the invention (^) The latter will be exacerbated under the influence of the oxygen capture effect of the hydrogen gas. In addition to the annealing process, the machines 580 and 585 can be used as injection and discharge points for other gases applied to the workpiece W. Other features can be incorporated into the thermal processor 500 to make it particularly suitable for single workpiece annealing operations. For example, the volume of the processing chamber body 555 formed by combining the first assembly 505 and the second assembly 510 may be relatively small, which will make the net removal operation more efficient and thereby reduce the consumption of high net removal properties. Inert processing gas. In addition, one or more coolant injection machines 璋 612 and one or more coolant discharge ports 617 may be provided for the first assembly 505 to provide coolant to the lower surface of the carrier 520 adjacent to the workpiece w. Flow, which in turn will help cool the workpiece W. Furthermore, the first set of mounting bodies 520 may contain internal liquid flow channels for fluid recirculation, so as to maintain the lower surface of the mounting body 520 at a certain calibration temperature. It should be immediately understood that various fluid injection and discharge ports can also be attached to the second assembly 510. For example, the fluid port may be attached to the second assembly 510 for direct connection to the heat sink 570. More specifically, a cooling fluid flow may be provided directly to the heat removal tank 570 or other structure of the second assembly to cool the heat removal tank 570. In addition, one or a plurality of waste machine ports may be arranged in the second assembly 510 for the supply and / or ventilation of the processing gas. This configuration in which the machine ports are attached to the second assembly 510 has the advantage of reducing the amount of movement that is not conducive to the machine ports and their corresponding connectors, thereby increasing the overall reliability of the corresponding connection.

2C and 2D illustrate further embodiments of a thermal reactor constructed in accordance with the present invention. In many respects, this embodiment is similar to the previous figures 2A and 2B. 28 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm).

Order ——.------ Line I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. The embodiment set out in the description of the invention (>). However, the difference lies in that the workpiece supporting elements are disposed on the first assembly 505, and the counter seats are disposed on the second assembly 51. Therefore, when serving the automatic mechanical arms of the thermal reactor embodiments shown in the figures, when the first and second assembly systems are located at relative loading positions, the workpiece can be controlled to be placed and moved. Except for the first assembly 505 rooms. In the foregoing embodiments of the reactor, once the workpiece W has been removed from the heat transfer unit 560 and the processing chamber body 555 has been cleaned, the heater 565 of the heat transfer unit 560 will start to heat up to Target processing temperature. One of the features of these embodiments is that the controller uses closed circuit to control one or more temperature feedback signals to provide heating power to the heater 565 in the form of electrical energy. The workpiece W is then held at the processing temperature for a certain period of time. After the specific period of time has elapsed, the power of the heater 565 is turned off, and the heater 565 is connected to the heat sink 570. According to a cooling process V performed here, the heat sink 570 will remain engaged until the temperature drops to a predetermined temperature threshold, for example, 70 degrees Celsius, and then the heat sink 570 must be removed. According to this, the workpiece W can be cooled to a temperature so that it can be safely processed by the workpiece transfer mechanism and the subsequent processing chamber body. In addition, the workpiece W can be cooled to a temperature, and the electroplated metal is less susceptible to the influence of the oxidizing medium in the surrounding gas layer before being removed from the inert gas of the processing chamber body 555. After the completion of the cold drop cycle, the vacuum circuit used to protect the workpiece W from being placed in the heat transfer unit 560 will be closed, and the starter 515 may drive the first assembly 505 back to, for example, according to a specific embodiment. 2A or 2C. As shown in Figure 2A and Figure 2B, the first group of 29 paper sizes is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) -1. (Please read the notes on the back before filling this page) 1T ··

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. Description of the invention (1) The assembly 505 will be lifted, and the workpiece holder assemblies 525 will naturally join, or will be guided and joined, and the workpiece W will be lifted. Away from the surface of the heat transfer unit 560. The automatic workpiece transfer mechanism then removes the workpiece W from the workpiece support assemblies 525 and leaves the thermal reactor 500 ready to accept and process another workpiece W. When the thermal reactor 500 is waiting to receive another workpiece W, the heater 565 may be directed to start heating up to a desired processing temperature, or some intermediate temperature, thereby reducing the overall required to heat-treat the next microelectronic workpiece. time. Similarly, the workpiece support assembly 525 of the embodiment shown in FIG. 2C may be guided to release the workpiece W to the automatic workpiece transfer mechanism, thereby leaving the reactor 500 in a state where it is indeed ready to receive another workpiece. in. 3A-3F illustrate different embodiments of the heater 565 using various substrate configurations. In one embodiment, the heater 565 is configured as a thick film heater (ie, a heater constructed using a thick film pattern technology) and has a low thermal mass. Each thick film heater 565 configuration can accommodate a high power density within a thin solid shape, resulting in a low thermal mass (i.e., faster heating and cooling) with fast thermal response. In one feature of this embodiment, given the low thermal mass of this thick film heater configuration, the thick film heater 565 can be thermally isolated from other structures of the second assembly 510. Fig. 3A shows a basic type of thick film heater. That is, as shown in the drawing, the thick film heater 565 includes a high-resistance layer 600 disposed between two ceramic substrate layers 605. FIG. 3B illustrates further details of the thick film heater 565 embodiment. That is, as shown in the figure, the thick film heater 565 can be made according to a thin layer 600, and the 30 paper sizes on it are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 丨 .------ ---- ·; Installation—— (Please read the precautions on the back before filling out this page) 1T: --Line · Printed by the Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. Invention Description (丨) Constructed A circuit pattern having a high impedance 604 between two or more ceramic substrates 605, and an optional vacuum distribution circuit channel 603 embedded between the high resistance traces 604. When used, these vacuum distribution circuit channels 603 are connected to an external vacuum supply 607. The high-resistance traces 604 can be formed in such a manner that the power distribution is tailored to the shape of the microelectronic workpiece, and the workpiece can be uniformly heated. The optional vacuum distribution circuit channel 603 is connected to the hole 606 in the top substrate layer, thereby providing a suction action for the lower surface of the microelectronic workpiece. The embodiments shown in FIGS. 3A and 3B are particularly suitable for examples where a ceramic interface may be required between the heater 565 and the heat sink 570. FIG. 3C illustrates a third way that the thick film heater 565 can be constructed. That is, as shown, the thick film heater 565 can be made of two or more thin layers of a thin ceramic substrate 605 with a vacuum circuit channel layer sandwiched therebetween, and a high-resistance trace 600 is placed on The thick film heater 565 is on the surface. A dielectric glaze layer 601 is deposited on the high-resistance trace 604 to protect and electrically isolate it. Optionally, another dielectric plating layer 601a is deposited between the high-resistance trace layer 600 and the adjacent ceramic substrate 605 to improve the adhesion between the ceramic substrate 605 and the layer 600. This embodiment can be relatively easy to manufacture because the vacuum distribution channel 603 can completely cut through the second ceramic layer 605, and its rear end can be sealed by a lower portion adjacent to the ceramic layer. FIG. 3D illustrates a fourth way that the thick film heater 565 can be constructed. That is, as shown in the figure, the thick film heater 565 may be made of three or more thin ceramic substrates 605, and on these two or more thin ceramic substrates 31, the paper size is applicable to Chinese national standards ( CNS) A4 specification (210 X 297 mm) Packing --- (Please read the notes on the back before filling out this page) Order and line "Printed by the Intellectual Property Bureau Employee Consumption Cooperative of the Ministry of Economic Affairs 495885 Employee Consumption of Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative printed A7 B7 V. Description of the Invention (A) A vacuum circuit channel layer 603 is sandwiched between the plates 605, and the low-resistance trace 600 is placed between different groups of ceramic substrates 605. Again, this embodiment can be relatively easy to manufacture, because the vacuum distribution channel 603 can completely cut through the second ceramic layer, and its rear end can be sealed by a lower portion adjacent to the ceramic layer. In addition, this embodiment is also particularly suitable for examples where a ceramic interface may be required between the heater 565 and the heat sink 570. FIG. 3E illustrates that the thick film heater 565 can be a fourth way of construction. That is, as shown, the thick film heater 565 can be made of a single-layer thin ceramic substrate 605, and a high-resistance trace layer 600 is sunk on the bottom surface of the thick film heater 565. A dielectric glaze layer 601 can be deposited on the high-resistance trace 604 for protection and electrical isolation. The space between the bottom surface of the thick film heater 565 and the top surface of the heat exhaust groove 570 can be used as a vacuum reservoir extending through the holes 606 of the thick film heater 565. FIG. 3F illustrates an embodiment of a heater 565, which can be used to heat the top surface of the thick film heater 565 and the workpiece W during the heating cycle, and the lower surface of the thick film heater 565 and the heat during the cooling cycle Provide good thermal contact between the slots 570. To this end, the second ceramic layer 605 is provided with at least one set of vacuum distribution channels 603. The vacuum distribution channel 603 is fluidly connected to one or more holes 606, and the holes are placed and penetrated through the ceramic substrate for contacting the upper part of the workpiece W. The vacuum distribution channel 603 is also fluidly connected to one or more holes 609, and these holes are placed through the lower surface of the heater 565. In the heating 32 1 ---------- install -------- order ---.------ line (please read the precautions on the back before filling this page) « This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495885 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. During the process of both the invention description (V) and the cooling cycle, the vacuum Device 6O7 will all operate. In the cooling cycle, the vacuum provided through the holes 609 will help to establish the thermal contact between the lower surface of the heater 565 and the heat exhaust groove 570. In addition, individual vacuum distribution channels 603 can be connected To individually operable vacuum sources 607 and 608. In this embodiment, the first vacuum source and its corresponding vacuum distribution channel allow the workpiece W to enter a solid and thermal contact with the top surface of the heater 565, and the second vacuum source and its corresponding vacuum distribution channel , During the cooling cycle, the heat exhaust groove 570 is brought into solid and thermal contact with the lower surface of the heater 565. 3G-3J are exemplary plan views of various components used in the thick-film heater shown in Figs. 3B-3F. That is, as shown in the figure, the exemplary arrangement includes a plurality of concentric circle high-impedance traces 604 which are separated from each other according to the corresponding concentric circle isolation regions 611. The isolation regions 611 may include a dielectric material such as ceramic or air. When air is used as the dielectric material, the isolated regions 611 can define the vacuum distribution channel 603 of the embodiment, as shown in FIG. 3B. Each high-impedance trace 604 may include dielectric nodes that are isolated from each other according to the corresponding isolation region 613. These isolation regions 613 may include a dielectric material such as ceramic or air. In addition, the high-impedance trace 604 may be provided with power individually or with a shared power bus. Fig. 3H is an exemplary plan view of the arrangement of the vacuum distribution channels 603 arranged on the second ceramic layer 605, i.e., as shown in Figs. 3C, 3D and 3F. Once again, the vacuum distribution channel 603 can be constructed in the form of concentric circles, and pass 33 (please read the precautions on the back before filling this page). x 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 Α7 Β7 5. The invention description (M) is usually isolated from each other by the corresponding isolation area 614. The isolation area 614 may include one or more fluid circulation channels 617, which may provide a plurality of areas for allowing fluid to flow between the vacuum distribution channels 603 and the like, such that a vacuum source connected to one or more distribution channels 603 is provided. The vacuum provided can indeed flow to all distribution channels. FIG. 31 is a top view of an exemplary arrangement of the topmost ceramic layer 605. That is, as shown in the figure, holes 606 can be formed in the topmost ceramic layer 605 at a position just above the vacuum flow channel 603 (shown as a dashed box). According to the exemplary arrangement shown in the figure, the holes 606 are arranged in the form of concentric circles with equal angles. FIG. 3J is a further configuration of the high-resistance traces 604. That is, as shown in the figure, the traces 604 are arranged in a continuous spiral and separated by an isolation region 611, and the isolation region, that is, as described above, may be composed of solid dielectric material or air. When air is used, that is, as described in some embodiments, the areas 611 can be used as the vacuum flow channel 603. Figures 4A-7B are taken between the thick film heater 565 and the heat exhaust tank 570. Various embodiments of heat transfer units 560 with different interfaces. In the embodiment shown in FIGS. 4A and 4B, solid-state / solid-state conduction is used as the main heat transfer from the thick film heater 565 to the heat sink 570, and from the heater 565 to the workpiece W. mode. In the heat treatment of the workpiece W, the heat transfer unit 560 is in a heated state as shown in FIG. 4A. In the heating state, the top surface of the heat removal tank 570 will be displaced from the lower surface of the heat transfer unit 560, and the volume between each other will be like nitrogen. 34 The paper size applies to Chinese National Standards (CNS) A4 specification (210 X 297 mm) .1 · ---------- installation-- (Please read the precautions on the back before filling in this page) Order · 丨 Line: 495885 A7 B7 Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau. V. Invention Description ov) It is filled with relatively low thermal conductivity gas, which can thermally insulate the components from each other. Isolating the thick film heater 565 from the heat removal tank 570 in this manner will help to quickly heat to the desired temperature because there will be minimal heat loss here. As for the cooling state, it can be shown in FIG. 4B. In this state, the thick film heater 565 is turned off, and the thick film heater 565 and the heat exhaust groove 570 are moved relative to each other, so that the lower surface of the thick film heater 565 is joined to the heat exhaust The top surface of the groove 570. This relative movement may be provided by, for example, an inverted non-inflatable, rim seal, and they must be activated to transfer vertical movement to the row of heat sinks 570. 5A and 5B illustrate a heat transfer 560 embodiment in which solid / gaseous / liquid conductivity is used as the main mode of heat transfer from the thick film heater 565 to the heat sink 570. In this embodiment, the thick film heater 565 and the heat sink 570 are permanently displaced from each other by an extremely small distance (e.g., 0.020 inches). When it is in the heating state as shown in FIG. 5A, the volume 569 between the thick film heater 565 and the heat exhaust groove 570 is cleaned by a relatively low degree of heat conduction gas, thereby thermally insulating the components from each other. When in the cooling state as shown in FIG. 5B, the thick film heater 565 will be turned off, and the volume 569 between the thick film heater 565 and the heat sink 570 will be like the relative height of helium The heat-conducting gas is removed, and this can be used as a medium for conducting heat from the thick-film heater 565 to the heat-dissipating tank 570. This method can provide effective application and transmission of thermal energy without moving elements. In particular, a gas injection and discharge port must be provided at 50G of the thermal reactor. Figures 6A and 6B illustrate a method of applying forced convection and boiling as 35 (please read the precautions on the back before filling this page) Binding · Thread: This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ) 495885 A7 B7 V. Description of the Invention (V)) The embodiment of the heat transfer unit 560 that transfers heat from the thick film heater 565 to the heat sink 57Q. Again, the thick film heater 565 and the heat sink 570 are permanently displaced from each other by a very small distance (e.g., 0.020-0.040 inches). In the heating state shown in FIG. 6A, the volume 569 between the thick film heater 565 and the heat sink 570 will be netted off with a relatively low degree of heat conduction gas to thermally insulate the components from each other. In the cooling state shown in FIG. 6B, the thick film heater 565 will be turned off, and the volume 569 between the thick film heater 565 and the heat sink 570 will be filled with aggressive, high-speed heat. A liquid stream (such as water or glucose) is transmitted, which can serve as a medium for convectively transferring heat from the thick film heater 565 to the heat removal tank 570. In this example, the heat removal tank 570 can be configured as a spray shower assembly, which can evenly transfer the heat transfer liquid flow through the folds of the fluid spray holes in the top surface of the heat removal tank, and regionally through the discharge opening. Penetrate the folds to drain the flow. Alternatively, the used cooling fluid may be guided and discharged radially from the passage between the heating and heat removal tank. This holistic approach provides efficient application and transfer of thermal energy without the need to move elements. 7A and 7B illustrate yet another embodiment of a heat transfer unit 560. In this embodiment, the workpiece W, the thick film heater 565, and the heat removal tank 570 are in fixed contact throughout the heat treatment cycle. A thin layer of insulating material 633 is used to thermally insulate the thick-film heater 565 from the heat sink 570. The material and thickness of the thin layer 633 are selected to produce the best balance of the performance of the heat transfer unit 560 during the heating and cooling sub-cycles of the overall heat processing cycle. This design can provide 36 paper sizes for design simplicity. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) "Shang ------ --Order ---------- Line 』Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. Description of the invention (outside) Advantages, because there is no moving parts and no thermal insulation / conductive gas is required. In each of the foregoing embodiments, the heat sink 57G directly contacts the heater 56S, but can be added in the cooling cycle with a highly thermally conductive material between the contact surfaces. This is placed between the contact surfaces The material of 'is preferably elastically shaped in response to the pressure applied when the heater 565 and the heat sink 570 are in direct thermal contact with each other. In this way, it can be used between the heater 565 and the heat sink 570. There is a more uniform heat transfer medium. This is because it eliminates the problem that if the heater 565 is in direct physical contact with the surface of the heat removal tank 570, air encapsulation will occur. Figure 8 illustrates one way. Two or more of them based on some or plural The thermal reactor constructed in the foregoing embodiment may be coupled to a single annealing station. In this embodiment, the thermal reactors are placed in a carrier unit 700 in a stacked configuration. The carrier unit 700 It includes a plurality of chamber units 710, each including a single thermal reactor. These chamber units 710 are defined by high and low horizontal partition walls 715 and 720, and one or more side walls 725. Each chamber unit One or more side walls 725 of 710 may include an automatic door or a slot opening 730, which can isolate each chamber body unit 710 from the surrounding environment, and provide a workpiece transfer mechanism during the loading and unloading of workpieces. The functions of these thermal reactors are received. Figure 9 is a block diagram of an embodiment of a programmable control system, which can be used to control the assembly of the thermal reactor according to further features of the present invention. The control system is shown below 900 may include a programmable controller 905, such as a programmable logic controller, a microcontroller, a microprocessor, etc. The controller 905 receives data and communicates data to and from the controller for controlling the heat.Paper scale applicable Chinese National Standard (CNS) A4 size (210 X 297 mm) • I * --------- equipment --- (Please read the notes on the back of this page and then fill in) 1T ·

Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. Description of the Invention (β) The surrounding elements of the reactor. For example, the controller 905 may communicate with an automatic air flow meter / valve system 910. The automatic gas flow meter / valve system 910 can control the flow conditions of various gases, such as degassing, etc., supplied to the thermal reactor. The automatic airflow system 910 can also be used to control the operation of the vacuum equipment 607 and / or 608 as shown in Figs. 3B-3F, and the equipment can be turned on or off at an appropriate time. Controlling the annealing temperature in the thermal reactor can also be controlled by the controller 905 through a corresponding interface connected to a certain reactor temperature sensing / supply system 915. The reactor temperature sensing / supply system 915 includes a plurality of temperature sensors for monitoring the temperature in the thermal reactor. The system 915 can also include a power supply that can provide the necessary power to the electronic traces 604 of the high-impedance layer in response to data communicated from the controller 905 (Figures 3A-3F). Various programmable temperature control algorithms can be used in the programmable controller 905 to facilitate this function. The component driving system 920 and the fork cooling assembly 925 can operate the driver 530 (see FIGS. 2A-2D) and the heat sink 570, respectively. More specifically, the driving system 920 can control the driver 530 to move the first and second assemblies 510 and 520 relative to each other, and respond to various instructions received from the programmable controller 905 to perform the loading. Loading / unloading jobs and workpiece W processing jobs. The driving system 920 can also communicate the position information indicating the relative positions of the first and second assemblies 510 and 520 to the controller 905, which can be used by the controller 905 during the operation of the thermal reactor. The position of each assembly can be appropriately positioned. The cooling assembly system 925 is available as two items. First, the system 925 38 ^ paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) '1 · ---------- installation-(Please read the precautions on the back before (Fill in this page) Order ·-丨: Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. Description of invention (determined) (Please read the notes on the back before filling this page) It can be used to respond to the control The commands received by the controller 905 are used to control the relative movement between the heater and the heat exhausting tank 570. In addition, the 'system 925 may respond to various commands received from the controller 905' to control the temperature of the heat removal tank 570 by controlling the cooling gas supplied to the heat removal tank. To this end, the system 925 may also include one or more temperature sensors' to monitor the temperature of the heat sink 570, and transmit data indicating the temperature to the controller 905. The controller 905 may then use this temperature information to guide the system 925 to cool the heat sink 570 to a target temperature. The controller 905 can also communicate with one or more safety shutdown elements 930. When the controller detects one or more conditions that meet the safety conditions of the thermal reactor, the controller 905 then activates the safety shutdown elements 930. For example, in response to an excessively high temperature condition of a heating fork, a reactor chamber, etc., the safety shutdown elements 930 are used by the controller 905 to shut down the thermal reactor system. It should be immediately known that, based on the teachings of this column, the controller 905 may also detect other security conditions and then activate their secure shutdown element 930. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs FIG. 10 is a partial schematic, partial cross-section, side view, and the like composition of an apparatus 1000 for heat-treating a microelectronic workpiece W according to an embodiment of the present invention. According to a feature of this embodiment, the apparatus 1000 includes two heat treatment chamber bodies 1003 (illustrated as an upper chamber body 1003a and a lower chamber body 1003b), and is supported by a device bracket 1002. Each of the chambers 1003 may have a base 1010 and a chamber cover 1020 that is moved toward and away from the base 1010 and closes and opens the chamber 1003. The workpiece W may be supported in the chamber body 1003 by a plurality of workpiece supports 1070. According to one of the characteristics of this embodiment, the device 1000 can apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) to 39 paper sizes. 495885 A7 B7 2. Description of the invention (β) A selected material (such as copper or other metal) of the workpiece W is annealed. In addition, the device 1000 may perform other high-temperature processes, that is, as described in detail later. When the device 1000 heats and cools the workpiece w, during the heating stage of the manufacturing process, the workpiece holders 1070 can move the workpiece w 俾 down to engage the heat source 1040. In the cooling stage of the manufacturing process, a first row of heat sinks 1060 can be raised to engage the opposite surface of the heat source 1040, and both the heat source 1040 and the workpiece W can be cooled. After the cooling stage, the first row of heat sinks 1060 can be lowered to engage a second row of heat sinks 1050, where the first row of heat sinks 1060 are cooled to fit another cycle. The chamber cover 1020 is then removed from the base 1010, and the workpiece w is removed. In a suitable feature of this embodiment, the heat source 1040 is placed between the workpiece W and the first row of heat sinks 1060, and the first row of heat sinks 1060 is located below the heat source 1040. ) In one embodiment, the bracket 1002 of the device 1000 may include a frame defined by a plurality of vertical frames 1004 (both of which can be seen in FIG. 9), and each has a receiving channel 105. The labels 1006 extending outward from the base 1010 of each chamber body 1003 can be inserted into the corresponding channels 1005 'and the labels 1006 can be locked to the longitudinal frames 104. The chambers 1003 are fixedly attached to the longitudinal frames 1004. According to this, the chambers 1003 move vertically in the conveying mechanism 620 to selectively place a single ~ microelectronic workpiece in the process of the upper chamber 1003a or the lower chamber 1003b ' It does stay fixed. On the other hand, in addition to or in place of the transmission mechanism 620 being moved in the vertical direction, the chambers 1003 may be individually or collectively coupled to a certain or multiple actuators 1007, and the paper size is as small as 40 papers. Home Standard (CNS) A4 Specification (210 X 297 Public Love) (Please read the precautions on the back before filling this page)

495885

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention) Vertically move the chambers 1003. In a further feature of this embodiment, the chamber bodies 1003 may have a modular structure. For example, the lid 1020 of the lower chamber body 1003b may be based on the base 1010 which may also be integrated with the upper chamber body 1003a. The cover 1020 of the upper chamber 1003a can be supported by the cover 1030. In this way, any number of chambers 1003 can be stacked on each other in this way. By integrating the characteristics of a certain chamber and the chambers above it, the total number of components of the device 1000 can be reduced. This arrangement can also reduce the space tracking required for multiple chambers. At the same time, this configuration can provide the flexibility of a modular architecture. In another embodiment, the device 1000 may have other modular configuration modes, that is, those arranged in a side-by-side manner. The cover 1020 of each of the room bodies 1003 may be coupled to the cover starter 1021 to move downward from the open position (as shown in FIG. 10) to a closed position. The lid starter 1021 of the upper compartment 1003a may be attached to the cover 1030, and the lid starter 1021 of the lower compartment 1003b may be a base attached to the upper compartment 1003a. Block 1010. Each cover starter 1021 may include an air-actuated bellows, and the cover 1020 may be moved downward when inflated. In one feature of the present invention, each bellows can extend 360 ° to the periphery to form a closed ring. In addition, a plurality of bellows or other starters can be placed on the cover 1020 by a spaced-apart ring. In any embodiment, when the air pressure in the bellows is released, one or more springs (not shown) can return the cover 1020 to the open (upper) position. When the chamber cover 1020 is in the closed position, the chamber cover 1020 and the base 1010 can define a volume of the chamber body 1008 that surrounds the microelectronic workpiece W. 41 This paper size applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) ------------ install -------- order --- «------ line (please read the precautions on the back before filling in this Page) «495885 A7 B7 V. Description of Invention (q) (Please read the notes on the back before filling out this page). That is, as shown in Fig. 2B according to the reference, it is advantageous that the area surrounding the microelectronic workpiece W can be removed during the annealing process. Therefore, the chamber cover 1020 may include a decontamination fluid flow channel 1022, and the decontamination fluid (such as nitrogen) is transferred to the chamber body volume 1008 through the folded surface 1027. The folded surface 1027 is aligned with the cleaning fluid diffusion plate 1025, and the cloth is perforated with a cleaning fluid hole 1024 which can be directly guided into the volume 1008 of the chamber body. The flow passage 1022 can also be coupled to the fluid removal machine port 1023 by connecting the passage 1028a. The cleaning fluid port 1023 can be connected to a cleaning fluid source (not shown). In one embodiment, the fluid removal port 1023 of the upper chamber 1003a may be located in the cover 1030, and the fluid removal port 1023 of the lower chamber 1003b may be located at the base of the upper chamber 1003a. Within 1010. The connecting passageway 1028a of the two chamber bodies 1003 can be extended outward along the sides, and the fluid removal machine 璋 1023 coupled to the external surface of the device 1000 can be extended upward to avoid interference with the annular cover starter 1021. The decontamination fluid can exit the opening 1026 through the decontamination fluid on the external surface of the device 1000 and be discharged from the chamber volume 1008. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs During the high temperature process of the annealing process, the microelectronic workpiece W can be joined to the heat source 1040. To this end, the upper surface of the heat source 1040 includes a solid material that can transfer heat to the microelectronic workpiece by conduction. The heat source 1040 may also include a vacuum hole 1041 coupled to a vacuum source (not shown), which will be described in detail later. During the heating process, the microelectronic workpiece W must be drawn close to maintain the heat source 1040. Tightly connected state. For example, the heat source 1040 may be supported by a plurality of heat source brackets 1044 relative to the base 1010, at least one of which contains a fluid flow communicating with the vacuum hole 1041 42 The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495885 A7 B7 V. Description of the invention ( <) of the vacuum aisle 1043 (shown in the lower chamber body 003b). The vacuum aisle 1043 may also be connected (via a connecting aisle i28b) to a heater vacuum machine 璋 1042 of the external surface of the device, which is said to be connected to the vacuum source. In the cooling part of the annealing process, the first row of heat sinks 1060 can be raised to engage the heat source 1040, and both the heat source 1040 and the microelectronic workpiece W can be cooled by the conduction effect. According to this, the first row of heat sinks 106 () may be coupled to a row of heat sink starters 1061, who may move the first row of heat sinks 1060 upward to engage the heat source 1040. In one embodiment, the heat exhaust tank starter 1061 may include a gas-driven bellows, similar to the aforementioned chamber cover starter 1021. Or on the other hand, the heat sink starter 1061 can have other configurations. The first heat sink 1060 can be moved upward to engage the heat source 1040, and moved downward to be detached from the heat source 10. 40. In a further feature of this embodiment, the first row of heat sinks 1060 may include a vacuum supply channel 1062, which is connected (via a connecting aisle 1028c) to a vacuum port 1065 of an external surface of the device 1000. The vacuum supply channel 1062 is coupled to one or more radial vacuum channels 1063 and one or more ring-shaped vacuum channels 1064 in the upper surface of the first row of heat sinks 1060, so as to serve as the heat source 1040. When the first row of heat sinks 1060 are connected to each other, the first row of heat sinks 1060 can be drawn and brought into close thermal contact with the heat source 1040. The upper surface of the first row of heat sinks 1060 may also include a compressible, conductive thermal pad 1066, which has a joint surface 1067, and when the first row of heat sinks 1060 is in its raised position At this time, close thermal contact with the heat source 1040 is available. In another feature of this embodiment, the lower surface of the first row of heat sinks 1060 may include a compressible, 43 paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) i ·- -------- «-Equipment (please read the note on the back before filling in this page) Order ——- I ------ line« Printed Economy Printed by the Consumer Cooperative of the Ministry of Intellectual Property Bureau 495885 A7 __________----- V. Description of the Invention (〇Λ) A thermal pad that is conductive and resembles the pad 1066 to improve heat dissipation with the second row Thermal contact between the slots 1050. In one embodiment, the first row of heat sinks 1060 has no active cooling elements. According to this, the advantage of this configuration is that there will be no cooling fluid supply line connected to the first row of heat sinks 1060, which can eliminate the design of the fluid coupling connected to a movable heat sink Complexity. Instead, when the first row of heat sinks 1060 is detached from the heat source 1040 and joined to the second row of heat sinks 1050, the second row of heat sinks 1050 can operate for cooling and must cool the first row Hot slot 1060. According to this, the second row of heat sinks 1050 may include a cooling channel 1054 coupled to the cooling fluid supply port and the return port, which will be described in detail later with reference to FIG. 18. The second row of heat sinks 1050 may include a cooling module cover 1051 to seal and partially define the cooling channel 1054, which will also be described in detail with reference to FIG. 18 in the text. In other embodiments, in addition to cooling the second row of heat sinks 1050, the first row of heat sinks 1060 (such as by a cooling fluid) may be used for operation cooling. This configuration can speed up the cooling speed of the first row of heat sinks 1060 (and / or the heat source 1040 and the workpiece W). This is because when the first row of heat sinks 1060 is fed to the heat source Γ040, it can be cooled. The first row of heat sinks 1060. FIG. 11 is a partial burst and isometric view of the heat source 1040 embodiment of FIG. In one feature of this embodiment, the heat source 1040 may include three ceramic plates 1046, as shown in FIG. 11 as an upper ceramic plate 1046a, a middle ceramic plate 1046b, and a bottom ceramic plate 1046c. The upper ceramic plate 1046a includes a drawable microelectronic workpiece W (as shown in Fig. 10) and a 44-diameter paper. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) " -I .------- --- • Installation ---- (Please read the precautions on the back before filling out this page) Order—— · ------ Wire «495885 A7 B7 V. Description of the invention (AV) Dense heat bonding to the heat source A vacuum hole 1041 of 1040. The middle-layer ceramic flat plate 1046b includes a vacuum channel 1047 that can provide a fluid flow function between the vacuum hole 1041 and the heater vacuum machine 1042 (see FIG. 10). At least one of the vacuum channels 1047 will include the coupling port 1045 of the vacuum channel 1043 (see FIG. 10) aligned with the heat source bracket ι04. The bottom ceramic plate 1046c includes a calibration angle pin 1049 that can be extended upward, and penetrates the corresponding calibration holes 1048 in the middle ceramic plate 1046b and the upper ceramic plate 1046a, so that the three ceramic plates HM6 can be mutually Qi Zhun. The electronic connector 1084 can bond an electronic component to the lower surface of the underlying ceramic flat plate 1046c, that is, as described in detail later with reference to FIGS. 13 and 16. FIG. 12 is a partial top view isometric view of a heat source 1140 according to another embodiment of the present invention. In one feature of this embodiment, the heat source 1140 includes a single ceramic plate Π46, which has a plurality of vacuum channels 1147 directly formed in the upper surface of the single ceramic plate 1146. At least one of the vacuum channels 1147 includes a channel cover 1139. One end of the vacuum channel 1147 can define a coupling port 1145, which is configured to be aligned with the vacuum channel 1043 described in FIG. 10 above. The channel cover 1139 may further include a bottom surface having a vacuum groove 1138, and the concave structure may provide fluid flow between the coupling port 1145 and the vacuum channels Π47. The vacuum channels 1147 are directly exposed to the facing surfaces of the microelectronic workpiece W downward to draw the workpiece W to be connected to the heat source 1140. . For this reason, one of the characteristics of the heat source 1H0 described in the previous FIG. 12 is that the other can be made of a single ceramic plate 1146 without the need for multiple plates. One of this configuration method 45 paper size is applicable to China National Standard (CNS) A4 specification (21 × 297 mm) (Please read the precautions on the back before filling this page) "Installation -------- 1T ---.------ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (岣) The advantage is that it can reduce production costs. And increase the reliability of the heat source 1140. In the case of referring to the embodiments of any of the heat sources 1040 and 1140 of Figs. 11 and 12, the heat source may further include a heat generator. For example, as shown in Fig. 13, An electronic component 1080 is directly attached to and / or integrated into the lower surface of the heat source 104 (Γ. For this reason, the electronic component 1080 may be more efficient than some conventional systems The power source 1040 supplies power to the heat source 1040, and can be more easily stripped from the heat source 1040. In one feature of this embodiment, the electronic component 1080 may include an internal area 1088 and Various circuits in the outer region 1087. One feature of this embodiment is In this case, two internal circuits 1082 may provide power to the internal area 1088, and two external circuits 1083 may provide power to the external area 1087. Each of the circuits 1082 and 1083 may include two contact pads for coupling to a power source. Pad 1081, which is further detailed as referenced in Figure 16. In this regard, the electronic component 1080 can be tailored to be responsible for or due to a locality of the microelectronic workpiece W (and the heat source 1040) compared with other parts. This is a different heating rate requirement. For example, when the heat loss at the peripheral area of the microelectronic workpiece W is greater than the heat loss at the interior of the microelectronic workpiece W, the external area 1087 of the electronic component 1080 may be provided in It is a large amount of electricity to average the expected heat loss. In other embodiments, the electronic component 1080 (or other heat generating device) can be customized according to the heat source 1040 and / or the micro The heat transfer characteristics of the electronic workpiece W provide a differential or uniform heating method for the microelectronic workpiece W. Fig. 14 is a top plan view of the heat source 1240, and the results of the thermal analysis measured on the upper surface of the heat source 1240 The heat 1240. Placement 46 This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Binding · 495885 A7 A_B7____ V. Description of the invention (VV) is connected to the side wall 1281 of the room body, and includes an inner area 1288 and an outer area 1287. The heat source 1240 may further include a cell 1249 to accommodate the workpiece support 1070 (as shown in FIG. 10). An embodiment of the heat source 1240 The thermal analysis results (where the microelectronic workpiece W is placed on the heat source 1240) indicate that power can be provided at different rates per unit area of the heat source 1240 to uniformly heat the microelectronic workpiece W. For example, the outer area 1287 may include a central portion 1287a, peripheral areas 1287b on each side of the central portion 1287a, and a contact area 1287c adjacent to the heat source 1240 contact pad. In one embodiment, the electric power per unit area supplied to the peripheral area 1287b may be about 90% of the electric power per unit area supplied to the central portion 1287a. When the heat source 1240 includes a resistive electronic component, the electric power may be provided according to the item, or the electric power is provided by other sources. In either embodiment, the power may be proportional to the rate of heat supplied to the heat source 1240, or the rate of heat transferred to the microelectronic workpiece W. In addition, the power per unit area available to the contact area 1287c may be about 150% of the power per unit area supplied to the central portion 1287a. In other embodiments, the difference type of the relative power 値 supplied to each region 1287a to 1287c may be determined according to the specific characteristics of the heat source 1240 and the microelectronic workpiece W connected to the heat source 1240, for example. In one embodiment, the power supplied per unit area may be changed according to a function of the distance at point C in the heat source 1240. For example, the electric power per unit area can be increased in a radial direction outward, so that the external edge electric power of the heat source 1240 is about 7.5% higher than the electric power per unit area at the midpoint C of the heat source 1240. According to this, any local position on the heat source 1240 is 47. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before filling this page). Install the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative 495885 A7 B7 V. Description of the invention) The installed power can be given by: [1] ^ local = P center 1 + where P / πα / = local power per unit area ^ center = supplied to Electricity per unit area at the center of the heat source a = Electricity increase factor (such as 7.5%) r = Local radius R = Radius of the periphery of the heat source Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics In one embodiment, the α may be 7.5%, In other embodiments, the frame may be other frames. The heat source 124 (3) can be continuously changed across the entire surface, or it can be used to supply power to one or more areas of the heat source 1240 according to Equation 1 above. FIG. 15 is a top plan view of the heat source 1240 According to the embodiment of the present invention, the latter has four resistance heat generating elements 1280. In one feature of this embodiment, two internal circuits 282 (1282a and 1282b shown in the figure) can supply power to the heat source 1240 The internal area 1288 of the device, and two external circuits 1283 (shown as 1283a and 1283b) can supply power to the external area 1287 of the heat source 1240. In one feature of this embodiment, the circuits 1282 and 1283 can cover the The heat source 1240 is approximately 67% of the surface area. In other embodiments, the circuits 1282, 1283 may cover a greater or lesser percentage of the surface area of the heat source. In a further feature of this embodiment, the circuits 1282, Each of 1283 can be controlled independently to change the power supplied to the mature source 1240. In addition, one or more circuits can be controlled by different coupling to another circuit. For example, internal circuit 1282 Mutual coupling , And controlled by an individual 48 (please read the precautions on the back before filling this page) Binding ilr ----- line «· This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 495885 A7 B7 V. Control of invention (,) controller. In any embodiment, the circuits 1282, 1283 can be configured to correspond to the unit area rate corresponding to the analysis result as shown in FIG. To provide heat to the heat source 1240. For example, some internal circuits 1282 and external circuits 1283 can be laid along the peripheral line, and parts of each electronic component 1080 are double-folded and self-supported to form a plurality of adjacent peripheral areas. These peripheral sections can be closer to each other in the outer area 1287 than the inner area 1288, thereby increasing the power provided by the heat source 1240 per unit area. In the case of both the outer area 1287 and the inner area 1288 The space between adjacent adjacent sections can be reduced in a radial outward direction, so as to increase the power provided on a unit area corresponding to the electricity increase factor as described above. One of the characteristics of the arrangement described in Figs. 13-15 is that the resistance heater is extended and has a uniform cross-sectional shape and cross-sectional area. It extends over the entire surface of the heat source, and is pressed at different areas of the heat source. Heat is generated at different rates. For this reason, the impedance heater can have a simple appearance and structure, and at the same time, it can handle the variability of the heat transfer rate between the heat source and the microelectronic workpiece W. For example, in one embodiment The heat source 1240 can heat the microelectronic workpiece W to a stable temperature of 285 degrees Celsius, and the variability across the surface of the microelectronic workpiece W can be approximately from 3 degrees Celsius to 4 degrees Celsius. In other embodiments, the heat source can provide other steady-state temperatures and other temperature variability. For example, in one embodiment, the heat source 1240 may heat the microelectronic workpiece W from about 25 degrees Celsius to 25 degrees Celsius in about 10 seconds. In yet another embodiment, the heat source 1240 may include a heating element having a configuration other than an extension strip. For example, the heat source 1240 may contain 49 paper sizes that are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) .1 .------------ install --- (please first Read the precautions on the back and fill in this page.) · 丨 line · Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. Description of the invention) A film heater. (Please read the precautions on the back before filling out this page.) Figure 16 is a side cross-sectional view of an electrical connector that can provide power to electronic components 1080 and 1280 as described in Figures 13 and 15 above. In one feature of this embodiment, each connector 1084 includes a hot contact surface 1085 of one of the contact pads 1081 bonded to some of the electronic components 1080, 1280. In one embodiment, the contact surface 1085 may include a material that can have fairly good electrical and thermal conductivity. This material can be, for example, a nickel / iron alloy, such as "Alloy 42" sold by Ed Fagen of Franklin Lakes, New Jersey, USA. In a further feature of this embodiment, the contact surface can be plated with a nickel layer with a thickness of 100 micro-inches and a gold layer with a thickness of 100 micro-inches, and welded to the contact pad 1081 of the heat source 1040 according to copper-zinc. (Figure 13). The connector 1084 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs may further include an extension separated from the contact surface 1085 and configured to be coupled to a wire attached to a power source (not shown) 1089 的 排 通 口 1086. In still further features of this embodiment, the shape of the row of openings 1086 may be selected to compensate for the heat loss of the conductors that pass through the connector 1084. For example, the exhaust port 1086 may have a smaller diameter in the area between the contact surface 1085 and the wire 1089, and this may locally increase the resistance of the connector 1084 and cause the connector 1084 to be in the area Heat up here. The resistance heat generated in this area can compensate for the heat loss of the conductor caused by the connector 1084. FIG. 17 is a top view and the like of the workpiece holders 1070 described with reference to FIG. 10. In one feature of this embodiment, the workpiece supports 1070 include a support post 1071 and a support clip 1073. The supporting column 1071 may include a corner of 50 paper sizes that are applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 mm). Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7. It can be slidably connected by the groove 1074 of the supporting clip 1073. The supporting clip 1073 may further include a support finger 1075, which is sufficient to extend radially inward to support the microelectronic workpiece W (as shown in FIG. 10). A plurality of workpiece holders 1070 are arranged in a circle to surround the heat source 1040 (as shown in FIG. 10), and the fingers 1075 extend radially inwardly on the heat source 1040 to support the micro source on the heat source 1040. Electronic workpiece W. Each work piece holder 1070 may include an engaging surface 1076, and when the chamber cover 1020 (shown in FIG. 10) is moved down to its closed position, it may be engaged with the chamber cover 1020. In this regard, the chamber cover 1020 can move the support clip 1073 and the microelectronic workpiece W downward until the microelectronic workpiece W engages the heat source 1040 and closes the chamber cover 1020. The internal spring 1077 can deviate each workpiece holder 1070 upward, so that when the chamber cover 1020 is opened, the microelectronic workpiece W can be detached from the heat source 1040. Before the chamber cover 1020 touches its fully open position, the stop assembly (not shown in FIG. 7) can stop the upward spring of the support clip 1073, so that during the installation and removal of the workpiece W, Provides the clearance between the microelectronic workpiece W and the lower surface of the chamber cover 1020. FIG. 18 is a partial burst, top view, etc. composition of a certain embodiment of the second row of heat sinks 1050 as described above with reference to FIG. 10. In one feature of this embodiment, the second row of heat sinks 1050 may include a fluid supply port 1052 and a return port 1053, each of which is coupled to a cooling channel 1054. The cooling channel 1054 will first have an open upper surface, and it will be closed when the heat exhaust tank cap 1051 is attached to the second heat exhaust tank 1050. In this regard, cooling fluid can be supplied through the fluid supply port 1052 to the cooling channel 1054 ', and the 51 paper standards are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) I .--- ------- Installation ---- (Please read the precautions on the back before filling in this page) Order —— „------ line« 495885 A7 B7 V. Description of the invention (force) Return machine 璋1053 and is discharged from the second row of heat sinks 1050. In one embodiment, the path of the cooling liquid flowing through the cooling passage 1054 in the second row of heat sinks 1050 will be connected to the passages 1028a, l 〇28b and / or 1028c interrupted. To this end, the cooling channel 1054 can be detoured into the coupling channel 1055 located in the heat sink cover 1051, and then returned to the cooling channel 1054 to complete the supply from The flow path from port 1052 to return port 1053. The operation of the 1000 embodiment of the device described in Figure 10-18 above is now explained in detail as shown in Figure 10. The operation of the upper chamber 1003a can be related to The operation of the lower chamber body 1003b is independent of each other. For this reason, whether it is the upper chamber body 1003a or the lower chamber body 1003b, the chamber cover 1020 is initially moved to raise or The open position, as shown in Figure 10. The volume of the chamber 1008 will be cleaned by an inert gas with a relatively low flow rate, such as N2, which will pass through the clean fluid port 1023 and pass through the clean fluid flow. Lane 1022. The heat source 1040 may be idle at an average temperature of about 50 degrees Celsius. In addition, the heat source 1040 may be off or not activated, and in another alternative embodiment, the heat source 1040 may be fully on. In yet another alternative embodiment, the heat source 1040 may be idle at a temperature other than 50 degrees Celsius. In any of the above embodiments, the first row of heat sinks 1060 may be placed back to the second row A heat sink 1050 to cool the first row of heat sinks 1060. 'Next, the microelectronic workpiece W is moved into the open chamber (in an embodiment, the application material side B is facing upwards) by a mechanical transfer mechanism. Inside the body. The transfer mechanism pulls the microelectronic workpiece W on the workpiece holder 1070 and pulls it away. Then the chamber cover 1020 is moved down to the closed position. At the same time, the workpiece holder can be engaged. 1070 and move them down to 52 sheets Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 1 · (Please read the precautions on the back before filling this page) Installation -------- Order --- ^ ---- --Line j Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. Description of the invention (θ) (Please read the precautions on the back before filling this page) The workpiece w is connected to the heat source 1040. Then it goes through the vacuum port 1042 applies a vacuum state to the vacuum hole 1041 to draw the workpiece W tightly thermally bonded to the heat source 1040. A vacuum can be applied before, during or after the lid closing operation. The process gas flow to chamber volume 1008 is then replaced with a net removal fluid (such as 1 to 10 liters of N2, Ar, Krypton 2 or He2 per minute). When the process gas is supplied at a higher flow rate, the device 1000 may include a mass flow controller and / or a multi-port flow valve flap to selectively control the flow of air into the volume 1008 of the chamber. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, the heat source 1040 is activated to heat the microelectronic workpiece to a selected temperature for a predetermined period of time. For example, when the microelectronic workpiece W includes a copper layer, the workpiece W may be heated to a temperature range of about 210 degrees to 290 degrees Celsius and maintained for about 30 seconds to about 90 seconds. In a particular example, the copper layer can be heated to about 250 degrees Celsius for about 60 seconds. According to this, the copper layer can be annealed, so that the grain structure of the thin layer is changed (for example, the grain size of the thin layer is increased). In other embodiments, the workpiece W may be heated to other temperatures according to other lengths of time according to the chemical composition of the calibration material of the process and the results expected from the process. For example, in an embodiment, the device 1000 may be configured to process the microelectronic workpiece at a temperature of about 45 degrees Celsius, and to anneal its copper layer, such as grain lines, channels, and / Or film. In other embodiments, the device can perform other low-temperature procedures, such as annealing of other metals, redirecting flux, and / or baking photoresist layers. In any of the embodiments, the start of the temperature rise from the idle temperature may be performed before, during, or after the lid is closed. Can use closed circuit temperature sensor to feedback 53 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 495885 A7 B7 V. Description of the invention ( < \) control, such as proportional integral control, proportional integral derivative control, or multivariate temperature control, etc., to increase the temperature from the idle temperature to the target processing temperature. After the microelectronic workpiece w is indeed heated, the first row of heat sinks 1060 will move upward to engage the lower surface of the heat source 1040 to cool the heat source 1040 and the microelectronic workpiece w. Then, a vacuum state is applied to the vacuum supply channel 1062 'through the vacuum port 1065, and the first row of heat sinks 1060 are sucked and tightly thermally bonded to the heat source 1040. In one embodiment, the microelectronic workpiece W can be cooled to a temperature lower than 70 degrees Celsius within 18 seconds. The process gas stream is then replaced by a net removal gas. When the cooling stage is completed, the first row of heat sinks 1060 will move downward and engage with the second row of heat sinks 1050 to cool the first row of heat sinks 1060. At the same time, the chamber cover 1050 (1020?) Will be raised to open the chamber body 003, and the transfer mechanism 620 will be moved into the open chamber body to be engaged with the microelectronic workpiece W, and then taken out for further processing. The second row of heat sinks 1050 is cooled by the cooling fluid provided to the cooling channel 1054 during or after being in contact with the first row of heat sinks 1060. An advantage of the device 1000 embodiment described above with reference to FIGS. 10-18 is that it can be a modular architecture. According to this, any number of chambers 1003 can be stacked and bottomed up to reduce the space trace occupied by the chambers. These chambers can also be integrated and stacked so that the bottom portion of the upper chamber can define the upper portion of its lower chamber. Another feature of the embodiment of the device 1000 described above with reference to Figs. 10-18 is that the heat source 1040 and the second row of heat sinks 1050 need not be moved relative to other parts of the device. Instead, the first row of heat sinks 1060 and the microelectronic workpiece W can be relative to the heat source 54 (please read the precautions on the back before filling this page) T-Pack --- Order ·! ^ ------ line; printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 495885 A7 B7 5. Description of the invention (1040 while moving, 俾 transfer heat to and from the microelectronic workpiece W. One advantage of this feature is that compared to some traditional configuration methods, it can indeed reduce the use of electricity, In addition to the number of movable coupling tools for clear fluid transfer and vacuum transfer to mobile accessories, another advantage of the feature of the device 1000 embodiment is that the heat source 1040 has a low thermal mass and is placed in a high At the heat removal tanks 1050, 1060. For this reason, the heat source (and thus the workpiece W) can be cooled down relatively quickly, and any gas heated by the heat source 1040 will tend to rise away from (not toward) the heat removal Slots 1050, 1060. One advantage of this configuration is that the workpiece can be heated and cooled quickly, while the throughput of the device can be increased compared to conventional devices. In other embodiments, the device 1000 can have others For example, 'The heat supplied by the heat source 1040 can be provided to devices other than the electronic component 1080. The cooling effect provided to the second heat sink 1050' can be provided by a mechanism other than a cold fluid. Move the chamber The starter of the cover 1020 and the first row of heat sinks 1060 may be electrically driven by a device other than a pneumatic device. The device 1000 (and / or other than the heat transfer device described above with reference to Figures 2A-18) may It is configured to perform a heat treatment process other than annealing. For example, the devices can heat the microelectronic workpiece W, redirect the flux on the surface of the microelectronic workpiece w, repair or bake the microelectronic workpiece W Photoresist layer, and / or perform other procedures that benefit from and / or require high temperatures. The heat source of the device can be conducted by direct contact with the workpiece and / or through an intermediate gas or liquid , And / or through the convection of an intermediary gas or liquid to heat the microelectronic workpiece. The heat source and the workpiece holder can be fixed opposite each other, or 55 paper standards are applicable to Chinese national standards (CNS) A4 specifications (210 X 297 public love) — · ---------- install ------ (Please read the precautions on the back before filling this page) Order --- " -Line 0 495885 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (5)) The heat source and the workpiece can move one or both of them. The first row of heat sinks must be movable relative to the heat source and the second row of heat sinks, or in addition, the constituent elements can be fixed to each other, so that the heat can be selectively passed between the heat source and the first row of heat. And / or introducing a fluid medium between the first row of heat sinks and the second row of heat sinks to heat or cool the workpiece. Fig. 19 is a schematic, cross-sectional side view of a portion of a device 1900 for heat treating a microelectronic workpiece according to another embodiment of the present invention. In one embodiment, the apparatus 1900 may include two heat treatment chambers 1903 (i.e., the upper chamber 1903a and the lower chamber 1903b). Each of the chamber bodies 1903 may have a base 1910 and a chamber cover 1920 that moves toward and away from the base 1910, and closes and opens the chamber body 1003. The workpiece W (shown in FIG. 10) may be supported by a chamber body 1903 located between the chamber cover 1920 and the heat source 1940. The workpiece W may be supported by a plurality of workpiece holders which are substantially similar to those discussed above with reference to Figs. 10 and Π, thereby selectively joining the workpiece W to the heat source 1940. The heat source 1940 may be supported by a plurality of heat source brackets 1944 with respect to the base 1910. In one embodiment, the heat source 1940 may have a configuration substantially similar to that shown in Figs. 11 or 12, and in other embodiments, the heat source 1940 may have another configuration. In a feature of the embodiment shown in FIG. 19, the device 1900 may include a first row of heat sink portions I960, which are fixedly attached to a second row of heat sink portions 1950 to define a certain row of heat sinks 1990. The device 1900 may further include a row of heat sink starters 1961, which can move the row of heat sinks 1990 to a position where the row of heat sinks 1990 are detached from the heat source 1940 (as shown in FIG. 19), and the first The heat sink part I960 is joined to the lower surface of the heat source 1940. 56 (Please read the phonetic notes on the back before filling out this page.) Packing ---- Order:: ------ Refer to this paper for China National Standard (CNS) A4 Specification (210 X 297 mm) 495885 A7 _____ B7 V. Description of Invention ( < \) (Please read the notes on the back before filling out this page). For example, the heat sink starter 1961 may include a bellows starter coupled to the starter supply channel 1966 and may supply pressurized fluid (e.g., air) to drive the starter up and down. In a further feature of the embodiment, the second row of heat sink portions 1950 may include a cooling channel 1954 having an opening 1955 facing upward. The second row of heat sink portions 1950 can be directly attached to the first row of heat sinks 1960 through a binder (not shown), so that the fluid in the cooling channel 1954 can directly join the first row of heat sinks. Part of the lower surface of 1960. An O-ring portion 1956 placed between the first row of heat sink portions i960 and the second row of heat sink portions 1950 prevents the cooling fluid from escaping through the interface between the two rows of heat sink portions. In addition, the heat sink 1990 may be constructed as an integrated, one-piece unit. The first heat sink section 1960, the second heat sink section 1950, and the heat sink starter 1961 may include various materials selected according to the expected operating temperature range and heat transfer rate. For example, in an embodiment, the heat sink slot portions I960 and 1950 may include copper, and the heat sink slot starter 1961 may include Teflon ™. In other embodiments, these elements may include other materials. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and in a further feature of the 1900 embodiment of the device, the heat sink 1990 may include a vacuum supply channel 1962 coupled to a plurality of radial vacuum channels 1963. Referring to the method described in FIG. 10 above, the heat sink 1990 is drawn in and brought into close thermal contact with the heat source 1940. The substrate 1910 may include a net fluid removal channel 1922 coupled to the folding surface 1927, and the net fluid removal is delivered through the net fluid removal hole 1924 in the manner described above with reference to FIG. 10. The base 1910 can also include a cover starter 57. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 495885 A7 B7 V. Description of the invention (β) (Please read the precautions on the back before Fill out this page) 1921, and also 'move the cover 1920 up and down in the manner described above with reference to Fig. 10'. The upper chamber body 1903a may include a cover 1930 to protect the device 1900. FIG. 20 is a partial burst, top view, etc. embodiment of the embodiment of the first row of heat sink portions 1960 and the second row of heat sink portions 1950 described above with reference to FIG. 19. In one feature of this embodiment, the first row of heat sink portions 1960 may include a circular vacuum channel 1964, which is fluidly passed through a plurality of radial vacuum channels 1963 to increase the number of heat sinks 1990 and the Vacuum suction between heat sources 1940 (see Figure 19). The first row of heat sink sections I960 may also include clearance recesses 1978 (as shown in Figure 19) to accommodate the workpiece holders in the manner described above with reference to Figures 10 to 17. The second heat sink portion 1950 may include a cooling supply line 1958 to supply a cooling fluid (such as water) to the inlet unit 1957a of the cooling channel 1954. After the fluid has indeed flowed through the second row of heat sink portions 1950, a cooling exit line 1959 can withdraw the cooling fluid from the exit port 1957b of the cooling channel 1954. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs FIG. 21 is a composition diagram of a base 1910 and the like according to an embodiment of the present invention. That is, as shown in FIG. 21, the vacuum supply flow path 1962 may be extended to the center of the base 1910 to provide a vacuum to the first row of heat sink portions I960 (see FIG. 19). The starter supply aisle 1966 may extend radially inwardly to supply pressurized fluid to the annular heat sink starter 1961, which is schematically shown in FIG. As mentioned above, one of the embodiments of the device 1900 described in Figs. 19-21 is characterized in that the first and second rows of heat sink portions i960 and 1950 can be fixedly attached to each other. The advantage of this characteristic is that the cooling fluid supplied to the second row of heat sink sections 1950 can be brought into direct thermal contact with the first row of heat sink sections I960. 58 This paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 495885 A7 B7 V. Description of the Invention (β) (Please read the precautions on the back before filling this page) and directly cool the first row of heat sink sections I960. A further advantage of this feature is that the cooling fluid can cool the first row of heat sink sections I960, while the first row of heat sinks are connected to the heat source 1940 °. According to this, compared to other configurations, the first row of heat sink sections The 1960 may cool the heat source 1940 more quickly and / or more completely. Fig. 22 is a schematic partial and cross-sectional side view of a device 2200 for heat treating a microelectronic workpiece according to still another embodiment of the present invention. In one feature of this embodiment, the device 2200 may include two heat treatment chambers 2003, as shown in FIG. 22 as the upper chamber 2203a attached to the cover 2230, and the lower chamber 2203a located below the upper chamber 2203a. Department body 2203b. Each of the chamber bodies 2203 may have a base 2210, a lid 2220, and a lid starter 2221 capable of moving the lid 2220 relative to the base 2210. The heat source 1940 may be positioned substantially similar to the foregoing, between the lid 2220 and the base 2210 of each of the chamber bodies 2203. The base 2210 may include a net flow removing channel 2222, a folding surface 2227, and a net flow removing hole 2224 to net the volume in each chamber body 2203 in a manner substantially as described above. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In a further feature of this embodiment, each chamber body 2203 may include a row of heat sinks 2260, which can be moved relative to the base 2210. According to this, each of the chamber bodies 2203 may include a row of hot groove starters 2261, such as a bellows starter, which can move the row of hot grooves 2260 up and down relative to the base 2210. In a further feature of this embodiment, the heat exhaust tank starter 2261 can be activated by a cooling fluid supplied to the expandable volume 2264 of the heat exhaust tank starter 2261 through the initiator supply channel 2266. In one of the features of this embodiment, the cooling fluid can be advanced from the heat sink starter 2261 to the exit 59. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495885 A7 B7 V. Description of the invention) Road (not visible in Figure 22). According to this, the fluid that activates the heat sink starter 2261 can also enter direct thermal contact with the heat sink 2260 to cool the heat sink 2260. The fluid can be a liquid, such as water or a refrigerant. Alternatively, the fluid may be a gas. In a further feature of this embodiment, the base 2210 may include an auxiliary heat sink 2250 constructed integrally with the base 2210. The starter supply aisle 2266 may have a turning path penetrating through the auxiliary heat removal tank 2250 to cool the auxiliary heat removal tank 2250. Alternatively, an individual cooling aisle 'may be provided in the auxiliary heat removal tank 2250 to cool the auxiliary heat removal tank 2250 independently of the heat removal tank 2260. In any embodiment, the device 2200 may include a valve coupled to the starter supply aisle 2266 to independently control the pressure and flow rate of the fluid through the starter supply aisle 2266 to the heat sink starter 2261. . According to this, the fluid flow rate can be increased or decreased to control the cooling rate of the heat removal tank 2260 (or the auxiliary heat removal tank 2250 if necessary), and the fluid pressure can be increased or decreased independently to control the heat removal tank to start. Of the heat sink 2260 and the movement of the heat sink 2260. A feature of the device 2200 described above with reference to FIG. 22 is that the same fluid can be used to start the heat sink starter 2261 and cool the heat sink 2260 (or the auxiliary heat sink 225 as needed). . Compared to other devices that require individual fluid sources for starter operation and cooling of the heat sink, the device 2200 can be simplified. Another advantage is that (as compared to the embodiment of the device 1900 as described in the previous figures 19-21), a fixed entry point (such as the base of the starter 2261) can be used instead of a mobile entry point (such as The entry machine 1957a) of FIG. 20 is used to supply cooling fluid. · An excellent 60 paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) -------- Line. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 495885 A7 B7 V. Description of Invention (M) (Please read the precautions on the back before filling this page) The point is, in the narrow volume Here, compared with the first row of heat sinks 2060 (as shown in FIG. 20), the mass of the row of heat sinks 2260 may be larger. According to this, the embodiment of the heat exhaust tank 2260 shown in FIG. 22 can have a more uniform temperature distribution effect than other heat exhaust tanks. Any of the various heat treatment chambers referred to in Figs. 2A-22 described above can be integrated with the wet chemical processing equipment, which is sufficient, and in particular, performs metal electrochemical deposition operations such as copper. One such treatment tool is an LT-210 ™ electroplating unit sold by Semitool Corporation, KalispeU, Montana, USA. Figures 23 and 24 illustrate embodiments of this integration. Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 23 illustrates an embodiment of the system 2300, including a number of processing stations or chambers 2310 (as shown in Figure 23). In one embodiment, the processing stations include one or more wetting / drying station chambers 2310a, and one or more plating stations or chambers 2310b. These plating chambers 2310b may include one or more plating reactors well known to those skilled in the art. References can be made to the following reactors: US Patent 5,985,126 International Application PCT / US99 / 15430 (published as WO 00/03067), International Application PCT / US00 / 10120 (published as WO 00/61498), and International Applications Case PCT / US00 / 10210 (published as WO 00/61837) is hereby incorporated by reference as a whole. In other embodiments, the system 2300 may include other wet chemical processing stations. In addition, the processing stations or application chambers may apply an etchant, a wetting fluid, a drying fluid (such as air) to the workpiece W, and / or by, for example, electroplating, electroless coating, electronic chemical deposition , Physical Vapor Deposition (PVD) and / or Chemical Vapor Deposition (CVD), etc. 61 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495885 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs System A7 B7 V. Description of the invention (1) Plating layer or thin layer. The chambers performing these functions are also well known to those skilled in the art. The system 2300 may also include one or more heat treatment chamber bodies 2315 (such as, but not limited to, an annealing chamber body). These heat treatment chamber bodies 2315 may include at least one thermal reactor constructed in accordance with one or more of the previous embodiments to perform an annealing process or additional heat treatment on each workpiece. These workpieces may be transferred between the processing station 2310 and the heat treatment chamber body 2315 by one or more mechanical transfer mechanisms 2320 that are placed to move linearly along the central trajectory 2325. In one feature of this embodiment, the mechanical transfer mechanism 2320 can operate independently to move microelectronic workpieces between each of the processing or application chambers 2310 and the thermal processing chamber 2315. In a further feature of this embodiment, the mechanical transfer mechanism 2320 can transfer one workpiece at a time between the chambers. Alternatively, each mechanical transfer mechanism 2320 may transfer multiple workpieces at a time. In any embodiment, the 'system 2300 can support a plurality of chambers in a single integrated carrier, thereby providing a single enveloping environment, and the chambers and transmission mechanisms are fully operable therein. In one embodiment, a microelectronic workpiece can enter the system 2300 via the input / output area 2312. The transfer mechanism 2320 shifts each workpiece to one of the plating chamber bodies 2310b, in which a blanket coating is applied to the seed layer pre-stored on the workpiece. The transfer mechanism 2320 then moves each workpiece to the wetting / drying station chamber body 2310a, where the workpiece is etched at an oblique angle, cleaned (front and rear), and spin-dried. The workpiece can be held on a single piece, and all processes of the wetting / drying platform chamber body 2310a can be completed at this time. The transmission 62 paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

495885 A7 ____B7 ___ V. Description of Invention (W) Mechanism 2320 Then each workpiece is moved from the soaking / drying station chamber body 2310a to the heat treatment chamber body 2315 to anneal the blanket. After the annealing process is completed, the transfer mechanism 2320 moves each workpiece to the input / output area 2312, where the workpieces are removed from the system 2300. Figure 24 illustrates a system 2400 having a heat treatment station 2435 (located in the heat treatment section 2430). In one feature of this embodiment, at least one of the heat processors 2315 at the heat treatment station 2435 is servoed by an exclusive mechanical mechanism 2440. The exclusive mechanical mechanism 2440 can accept workpieces transferred by the mechanical transfer mechanism 2320. Transfers can be made through an intermediary gate / zone 2445. According to this, the system 2400 can cleanly isolate the heat treatment portion 2430 of the system 2400 from the rest of the system. Alternatively, the heat treatment station 2435 can be configured as an individual module and can be attached to an existing system. Various modifications can be made to the foregoing system without departing from the basic teachings of the present invention. Although the present invention has been described in detail with reference to one or more specific embodiments as described above, for those familiar with the art, it should be clear that various changes can be made to it without deviating from this. The scope and spirit of the invention i .--------- 丨 · install (please read the precautions on the back before filling this page) --- order --------- Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Employee Consumer Cooperatives 63 This paper is sized for China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

495885 A8 _______ D8 VI. Application scope 1 · A device for heat treatment of microelectronic workpieces, including: a workpiece holder that can be placed to engage and support the microelectronic workpiece; and a heat source with a solid bonding surface, And placed to be bonded to a surface of the microelectronic workpiece, and the heat source may further include a heat generator directly attached and / or integrated with the heat source, the heat source and at least one of the workpiece holders may be It is moved relative to the first position where the microelectronic workpiece contacts the heat source joint surface, and is separated from the microelectronic workpiece between the second position of the joint surface. The heat source is dimensionally adjusted, and when the microelectronic workpiece is When engaged with the heat source, heat is transferred to the microelectronic workpiece at a rate sufficient to heat treat the selected material of the microelectronic workpiece. 2. The device according to item 1 of the scope of patent application, further comprising: a frame: a first component fixed to the frame and supporting the heat source at a fixed position relative to the frame; a first row of heat sinks Is supported by the first component and can be moved relative to the first component to a first position where the first row of heat sinks are spaced apart from the heat source in space, and the first row of heat sinks are joined to the Between the second position of the heat source; a first starter, coupled between the lower component and the first row of heat sinks, to move the first row of heat sinks relative to the lower element; a second assembly, Fixed to the frame and supporting a chamber cover, which is movable relative to the second component in a first position where the cover is spaced from the first component in space and the cover is connected to the first component The first of a component —.---------— (Please read the precautions on the back before filling out this page) Order ·-丨 Line 丨 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives This paper is applicable to this paper China National Standard (CNS) A4 specification (210 X 297 mm) 495885 A8 g D8 6. The scope of the patent application is between two positions, and when the cover is in the second position, the cover and the first component can define a chamber body that is at least partially enclosed around the microelectronic workpiece. A second starter coupled between the cover and the second component to move the cover between the first and second positions; and a second row of heat sinks relative to the first component Fixed, is coupled to the cooling fluid supply, and when the first row of heat sinks is in its second position, the second row of heat sinks is coupled to the first row of heat sinks heat sources. 3. The device according to item 1 of the scope of patent application, wherein the workpiece support is sized to support only a single microelectronic workpiece, and the heat source is configured to contact the non-contact during a given processing cycle. More than one microelectronic workpiece. 4. The device according to item 1 of the scope of patent application, wherein the heat source includes a Diankong hole which can be coupled to a vacuum source, and the microelectronic workpiece faces the microelectronic workpiece when the microelectronic workpiece is engaged with the workpiece holder, To draw the microelectronic workpiece toward the heat source. 5. The device according to item 1 of the scope of the patent application, further comprising a net fluid removal channel having an injection port which can be coupled to a net fluid removal source and a discharge port adjacent to the workpiece holder. Placed so that when the workpiece holder supports the microelectronic workpiece, the net fluid can be directed from the net fluid removal source to an area adjacent to the microelectronic workpiece. 6. The device according to item 1 of the scope of patent application, wherein the heat source includes a resistance heater. 7 · The device described in item 1 of the scope of patent application, further including a 2 paper 1ft standard applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) '(Please read the precautions on the back before filling this page ) · Binding "-line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 495885. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed A8 B8 C8 D8. 6. The patent application scope heat sink is coupled to a starter. And relative to the heat source, moved between a first position where the heat exhaust groove is joined to the heat source and a second position where the heat exhaust groove is detached from the heat source, the starter can be coupled to a source of pressurized cooling fluid for movement The starter, which has a volume of fluid that passes through the heat sink according to the fluid, thereby cooling the heat sink. 8. The device according to item 1 of the scope of patent application, further comprising first and second rows The heat sink, the second row of heat sinks is spaced apart from the heat source and is coupled to a cooling fluid supply, and the first row of heat sinks is placed between the second row of heat sinks and the heat source. A row of heat sinks can be opposite to the first The heat exhaust groove is moved at a first position where the first heat exhaust groove is joined to the second heat exhaust groove to cool the first heat exhaust groove, and the first heat exhaust groove is joined to the heat source to cool the heat source and the heat sink. Between the second position of the microelectronic workpiece, such as when the microelectronic workpiece is indeed connected to the heat source. V. 9 · The device described in the first item of the patent application scope further includes a first and a second row of heat sinks, An initiator is coupled between the first and second heat sinks, and the initiator can be coupled to a cooling fluid supply to connect the starter from the first heat sink to the heat source. The first configuration is changed to a second configuration in which the first row of heat sinks is spaced from the heat source. 10. The device as described in item 9 of the scope of patent application, wherein the starter includes a configuration configured to transfer cooling fluid The bellows delivered into the starter directly contacts the first row of heat sinks. 11. The device described in item 1 of the patent application scope further includes a row of heat sinks that can be moved relative to the heat source. The heat exhaust groove is connected to the first position of the heat source, and the heat exhaust groove is detached from the heat source. Between the second position of the source, the heat 3 (Please read the precautions on the back before filling in this page) Binding-thread · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 495885 A8 B8 C8 D8 6. The scope of the patent application source has a first portion of a fluid channel that can be coupled to a cooling fluid source, the heat sink has a second portion adjacent to the fluid channel, and when the fluid channel flows through the fluid channel The second part can be cooled at the time. 12. The device according to item 1 of the patent application scope further includes a first and a second row of heat sinks, and the second row of heat sinks are spaced apart from the heat source and are coupled Is connected to a cooling fluid supply, and the second row of heat sinks may further have a joint surface that is coupled to a vacuum hole coupled to a vacuum source, and the first row of heat sinks is disposed between the second row of heat sinks and Between the heat sources, the first row of heat sinks can be moved between the first and second positions relative to the second row of heat sinks. When the first row of heat sinks is in the first position, the first row of heat sinks The groove is engageable with the engagement of the second row of heat sinks Surface to cover the vacuum hole and cool the first row of heat sinks, and when the microelectronic workpiece is indeed connected to the heat source and the first row of heat sinks is in a second position, the first row of heat sinks can be joined to The heat source is used to cool the heat source and the microelectronic workpiece. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 13. The device described in item 1 of the scope of patent application, wherein the heat source has a resistive element of a contact portion, and wherein the device may further include an electrical and thermally conductive connector, The connector has a first end point and a second end point opposite to the first end point. The connector is connected to a resistive element contact portion facing the first end point of the connector, and the connector can be coupled to the connection. The current source at the second end of the connector, and the distribution method of the cross-sectional area of the connector between the first end and the second end, and the travel process of the current passing through the connector, are generated by size modulation. Resistive heating effect at least equal to the heat loss due to thermal conduction through the connector. 14. The device described in item 1 of the scope of patent application, in which the heat source has 4 paper sizes, which are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297). 495885 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. The scope of the patent application has been configured and configured to transmit heat to the first area of the microelectronic workpiece at the first rate of a certain unit area of the microelectronic workpiece, and the heat source may further contain an existing It can be configured to transfer heat to the second area of the microelectronic workpiece at the second rate of the unit area of the microelectronic workpiece, where the second rate of the unit area is higher than the first rate of the unit area rate. 15. The device described in item 1 of the scope of patent application, which further includes a microelectronic workpiece. 16. The device according to item 1 of the scope of patent application, wherein the heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to anneal the selected material of the microelectronic workpiece. 17. The device according to item 1 of the scope of patent application, wherein the selected material comprises a flux, and wherein the heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to re-direct the flux. 18. The device according to item 1 of the scope of patent application, wherein the selected material includes a photoresist layer, and wherein the heat source is sized to adjust the photoresist layer at a rate sufficient to heal and / or bake. To transfer heat to the microelectronic workpiece. 19_ A device for heat treatment of at least a first and a second microelectronic workpiece, comprising: a first heat treatment chamber body having a first workpiece holder placed to engage and support the first microelectronic workpiece, the first The chamber body may further include a first heat source that is sized to transmit heat when the first microelectronic workpiece is closest to the first heat source at a rate sufficient to perform heat treatment on the first microelectronic workpiece. For this first microelectronic workpiece; and 5 ^ sheets of scale applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) ~ (Please read the precautions on the back before filling this page) · Binding · Line-Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative printed clothing 495885 A8 g D8 Sixth, the scope of patent application-a second heat treatment chamber body, which is adjacent to the first chamber body and has a second placed to join and support the second microelectronic workpiece The workpiece holder, the second chamber body may further contain a second heat source, which is adjusted in size so that when the second microelectronic workpiece is closest to the second heat source, the temperature is sufficiently low. A program to heat treat the second microelectronic workpiece at a rate that transmits heat to the second microelectronic workpiece, and the first chamber system is positioned relative to the second chamber body so that it is located in the first and second chambers A portion of the first chamber body between the bodies is shared by the second chamber body. 20. The device according to item 19 of the scope of patent application, wherein the first chamber system is placed on the second chamber body, and a portion shared between the first and second chamber bodies may define the first chamber system. The lower surface of one chamber body and the upper surface of the second chamber body. 21. The device according to item 19 of the scope of patent application, wherein the first workpiece support is movable between a first position and a second position relative to the first heat source, and further wherein the first heat source may include a A solid joint surface, when the workpiece holder is in the first position, it will engage with the first microelectronic workpiece, and when the workpiece holder is in the second position, it will leave the first microelectronic workpiece, and The device may further include a row of heat sinks under the heat source. 22. The device according to item 19 of the scope of patent application, wherein the first chamber body includes a degassing channel disposed to supply net degassing to the second chamber body. 23. The device according to item 19 of the scope of patent application, wherein the first chamber body and the second chamber system are modular and can be used interchangeably. 6 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) · Installed 495885 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives A8 B8 C8 D8 6. The scope of patent application 24. The device according to item 19 of the scope of patent application, wherein the first chamber body includes a first chamber cover that is movable in an open position for receiving the first microelectronic workpiece, and at least partially Encapsulating between the closed position of the first microelectronic workpiece, and further wherein the second chamber body includes a second chamber cover that is movable to an open position receiving the second microelectronic workpiece, and at least partially encapsulates the Between the closed positions of the second microelectronic workpiece, the device may further include a base assembly supporting the first heat source, and its second chamber cover is engaged with each other and leans against the base assembly. 2 5 · The device described in item 19 of the patent scope of claim 'wherein the first workpiece holder is dimensionally adjusted so as not to support more than one microelectronic workpiece at a time, and the first heat source is dimensionally modulated In order not to touch more than one microelectronic workpiece at a time. 26. The device according to item 19 of the patent application scope, further comprising a first and a second row of heat sinks, and the second row of heat sinks are spaced apart from the first row of heat sinks and coupled to the cooling fluid. Supply, and the first row of heat sinks is placed between the second row of heat sinks and the heat source, and the first row of heat sinks can be moved relative to the second row of heat sinks to the first row of heat sinks and joined to The second row of heat sinks is used to cool the first position of the first row of heat sinks. When the microelectronic workpiece is indeed joined to the heat source, the 'first row of heat sinks is joined to the heat source to cool the heat source and the micro Between the second position of the electronic workpiece. 27. A device for heat-treating a microelectronic workpiece, including a device holder; a heat source supported by the device holder and configured to deliver heat to the microelectronic workpiece in a low temperature program; 7: The standard applies to the national standard (CNS) A4 specification (210 X 297 mm) of enzyme (please read the precautions on the back before filling in this page) · Binding · Thread 495885 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Patent application scope A workpiece holder is placed adjacent to the heat source, and the microelectronic workpiece is joined and supported relative to the heat source; and a row of heat sinks is adjacent to the heat source and placed to be selective Ground heat is transferred from the heat source, and the heat source and the microelectronic workpiece are cooled. 28. The device according to item 27 of the scope of patent application, wherein the device holder is movable relative to the heat source at a first position where the microelectronic workpiece contacts the heat source, and the microelectronic workpiece is isolated from the heat source. Between two positions 029. The device according to item 27 of the patent application scope, wherein the heat removal tank includes a passive conductive heat removal tank that does not couple the cooling fluid thereto. 30. The device according to item 27 of the scope of patent application, wherein at least one of the heat removal tank and the heat source can be moved relative to the other at the joining position where the heat removal tank is joined to the heat source, and the heat removal The slot is isolated between the evacuation position of the heat source. 31. The device as described in claim 27, wherein the heat sink is a first row of heat sinks, and the joint position is a first joint position, and wherein the apparatus may further include an isolation from the first row of heat The tank is coupled to a second heat sink at the cooling fluid supply, and the first heat sink is placed between the second heat sink and the heat source. The first heat sink can be opposite to the first heat sink. Two rows of heat sinks moved to a first joining position where the first row of heat sinks is joined to the heat source, and the first row of heat sinks is joined to the second row of heat sinks to cool the second row of the first row of heat sinks Between joint positions. 32. The device according to item 27 of the scope of patent application, wherein the heat mass of the heat removal tank is higher than that of the heat source. 8 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ··! Binding · Thread-495885 Printed by the Employees' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs System A8 B8 C8 D8 6. Application scope of patent 33. The device described in item 27 of the scope of patent application, wherein the heat capacity of the heat exhaust tank will be higher than that of the superheat source. 3 (The device according to item 27 of the scope of the patent application, wherein the workpiece holder is dimensionally adjusted so that it does not support more than one microelectronic workpiece at a time, and the heat source is dimensioned so that it does not touch more than one time. More than one microelectronic workpiece. 35. The device according to item 27 of the patent application scope, wherein the heat source includes a vacuum source that can be coupled to the microelectronic workpiece when the microelectronic workpiece is attached to the workpiece holder, and the system faces The vacuum hole of the microelectronic workpiece draws the microelectronic workpiece toward the heat source. 36. The device according to item 27 of the patent application scope, wherein the heat sink has a joint surface and can be compressed when the heat sink is discharged. 37. The uncompressed configuration when separated from the heat source, and the compressed configuration when the heat sink is connected to the heat source. 37. A device for heat treatment of a microelectronic workpiece, including: A workpiece holder for engaging and supporting the microelectronic workpiece; a heat source having a resistance element and an electronic contact portion, the heat source being configured to be set so that when the microelectronic workpiece is closest to the heat source, Heat is transferred to the microelectronic workpiece at a rate sufficient to perform thermal processing of the microelectronic workpiece at a low temperature procedure; and an electrical and thermally conductive connector having a first end point and a second end opposite the first end point. Terminal, the connector is engaged with a resistive element contact portion facing the first terminal of the connector, the connector may be coupled to a current source toward the second terminal of the connector, and at the first terminal and the Connection between the second endpoint 9 (Please read the precautions on the back before filling out this page) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 495885 A8 B8 C8 D8 VI. The method of distribution of the cross-sectional area of the patent application connector and the movement process of the current through the connector The size modulation produces a resistance heating effect that is at least equal to the heat loss through the connector due to heat conduction. 38. The device according to item 37 of the scope of patent application, wherein the connector has at least a part of a conical shape, and the diameter of the connector toward the first end point is larger than that of the connector toward the second end point. The outer edge of the connector is a curve on a plane, and the plane is parallel to a straight axis extending between the first end and the second end. 39. The device according to item 37 of the scope of patent application, wherein when the microelectronic workpiece is placed on the workpiece holder, the electronic terminal portion is placed adjacent to the outer edge of the microelectronic workpiece. 40. The device described in item 37 of the scope of patent application, wherein at least one of the heat source and the workpiece holder can be opposite to the other, and moved at a first position where the microelectronic workpiece contacts the heat source joint surface, and the The microelectronic workpiece is isolated between the second positions of the joint surface. 41. The device described in item 37 of the scope of patent application, further comprising a base assembly supporting the heat source; and a chamber cover, which can be moved between the open position and the closed position relative to the base assembly, and The cover and the base assembly are placed so that the microelectronic workpiece can be received therebetween when the cover is in the open position, and the cover and the base assembly can be received when the cover is in the closed position. The microelectronic workpiece is at least partially encapsulated. 42. The device described in item 37 of the scope of patent application, wherein the heat source 10 --------------- (Please read the precautions on the back before filling this page) ·-- Line _ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 x 297 mm) 495885 A8 B8 C8 D8. 6. The scope of patent application is adjusted by size so that the micro When the electronic workpiece is closest to the heat source, heat can be transferred to the microelectronic workpiece at a rate sufficient to anneal the selected material of the microelectronic workpiece. 43. The device described in item 37 of the scope of patent application, further comprising a microelectronic workpiece. 44_ A device for heat-treating a microelectronic workpiece, comprising: a workpiece holder configured to support the microelectronic workpiece; and a heat source disposed adjacent to the workpiece holder and having a previously configured setting, In a low temperature process, heat can be transmitted to the first area of the microelectronic workpiece at a first rate of a certain unit area of the microelectronic workpiece. The heat source can further include a configuration that can be used in the low temperature process. Heat is transferred to the second area of the microelectronic workpiece at a second rate per unit area of the microelectronic workpiece, and the second rate per unit area is higher than the first rate per unit area. 45. The device according to item 44 of the scope of patent application, wherein at least one of the workpiece holder and the heat source is relative to the other, and is moved by the heat source to be bonded to the microelectronic workpiece, and then to and from the microelectronic workpiece. The first position transmitting heat is isolated from the second position of the heat source between the microelectronic workpiece. Printed by a member of the Intellectual Property Bureau of the Ministry of Economic Affairs and a consumer cooperative. 46. The device described in item 44 of the scope of patent application, wherein the microelectronic workpiece includes an outer area and an inner area placed inward from the outer area, and Further, when the microelectronic workpiece is supported by the workpiece holder, the first region of the heat source is aligned with the inner region of the microelectronic workpiece, and the second region of the heat source is aligned with the outer region of the microelectronic workpiece. 47. The device described in item 44 of the scope of patent application, including the paper size applicable to China National Standard (CNS) A4 (210 X 297 mm) 495885 A8 B8 C8 — ~~ --- [一-六The scope of the patent application is ~~ and the second resistance heater is set to supply heat to the first area; and the second and fourth resistance heaters are set to supply heat to the area of the table. V: 48 The device according to item 44 of the scope of patent application, wherein the heat source 槪 is circular and has a center point and a radius. Furthermore, the first area is placed radially from the second area toward the inside. And where the second rate per unit area is about 7.5% higher than the first rate per unit area, and the fraction does not correspond to the distance from the second area to the center of the heat source divided by the heat source radius. The device according to item 44 of the scope of the patent application, wherein the heat source 槪 is circular and has a radius and a circle center. Furthermore, the power of each leased area of the microelectronic substrate generated by the heat source will be from the circle center according to the radiation direction. Outward It is gradually increased across at least one part of the heat source. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 50. The device described in the scope of patent application No. 44 wherein the heat source has an external edge source and from the external edge source The inner edge facing inward, and further, the electric power per unit area of the microelectronic substrate generated by the heat source will be directed inward from the external edge source in the direction of radiation, at least across a portion of the heat source and gradually increase. The device according to item 44 of the patent application, wherein the heat source includes at least one resistive element having a contact area to be coupled to a power source, and further, the second area is compared to the first area. Placement can be closer to the contact area. 12 This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 495885 A8 B8 C8 D8 6. Application scope 52. Such as the scope of patent application No. 44 The device described above, wherein the heat source 槪 is round and includes an extended resistance heater having 槪 is a fixed cross-sectional area, and wherein the heater A small part is double-stacked for self-reliance, and extends along a plurality of separated circular lines in the first area and the second area. The circular lines in the first area are at a first distance from each other. The space is separated, and the toroidal lines in the second area are separated from each other by a second distance smaller than the first distance. I 53. The device according to item 44 of the scope of patent application, wherein the heat source includes a A substrate having a substrate surface area, and a resistance heater adjacent to the substrate and having a heater impedance surface area, the heater impedance surface area being approximately 67% of the substrate surface area. 54. As described in item 44 of the scope of patent application Device, wherein the heat source includes a first resistance heater coupled to a first controller in a first area, and a second resistance heater coupled to a second controller in a second area The controller can independently control the first and second controllers to provide power to the first area in a manner independent of providing power to the second area. 55. A device for heat treating a microelectronic workpiece, comprising: a workpiece holder configured to support the microelectronic workpiece; and a heat source placed adjacent to the workpiece holder for transmission during a low temperature process Heat is given to the microelectronic substrate; a first row of heat sinks is placed to cool the heat source closest to the heat source; and A second row of heat sinks, placed next to the first row of heat sinks and chilled 13 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back first (Fill in this page again.) · Assembly-line · Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Employees' Cooperatives of the Ministry of Economic Affairs and the Consumers' Cooperatives of the Ministry of Economic Affairs. 56. The device according to item 55 of the scope of patent application, wherein the first row of heat sinks can be moved relative to the heat source and the second row of heat sinks, while being moved in the first row of heat sinks and joined to the heat source to cool the heat source The first position 'and the first row of heat sinks are engaged with the second row of heat sinks to cool the second position of the first row of heat sinks. 57. The device as described in claim 55, wherein the heat source is placed on the first row of heat sinks. 58. The device described in claim 55, wherein the workpiece holder is movable at a joining position where the microelectronic workpiece is joined to the heat source, and a disengaging position with the microelectronic workpiece is disengaged from the heat source . 59. The device described in claim 55, further comprising a microelectronic workpiece. 60 · —A device for annealing a microelectronic workpiece 'includes: a device holder; a base relatively fixed to the device holder; a chamber cover, which is placed adjacent to the base and can be opposite to the base The base is moved between an open position and a closed position for receiving the microelectronic workpiece, and when the chamber cover is located in the closed position, the chamber cover and the base can define an annealing chamber body; a workpiece holder is placed Between the cover and the base, to join and support the microelectronic workpiece; a heat source, relatively fixed to the base, and placed to transmit heat to the microelectronic workpiece in a low temperature program; 14 This paper size is applicable to the country of China Standard (CNS) A4 specification (210 X 297 mm) —-------- hi equipment— (Please read the notes on the back before filling this page) Order · 丨 Line-495885 Intellectual Property of the Ministry of Economic Affairs Bureau employee consumer cooperative printed storage C8 _____ D8 VI. Patent application scope-A first row of heat sinks can be moved relative to the heat source at a first position where the first row of heat sinks is joined to the heat source and connected to the first row of heat The tank is isolated from the heat source Between two positions; and a second row of heat sinks, which can be fixed relative to the base, and have a joint surface ′ for engaging the first row of heat sinks, and when the first row of heat sinks is in the second position At this time, heat from the first row of heat sinks can be transferred. 61. The device according to item 60 of the patent application scope, further comprising a first bellows actuator connected to the chamber cover and coupled to a source of pressurized fluid to move the chamber cover in an open position and a closed position Between; and a second bellows starter connected to the first row of heat sinks and coupled to a source of pressurized fluid to move the first row of heat sinks between an engaged position and a disengaged position. 62. An apparatus for heat-treating a microelectronic workpiece, comprising: at least a first processing chamber body, and when a first process is performed on the microelectronic workpiece, it has a first configured to support the microelectronic workpiece. Workpiece holder; the second processing chamber body may have a second workpiece holder placed to engage and support the microelectronic workpiece, the second processing chamber body may further have a heat source 'and the solid joining surface is placed to Is bonded to a surface of the microelectronic workpiece, and at least one of the heat source and the second workpiece holder can move relative to the other, and is moved to a first position where the microelectronic workpiece contacts the heat source bonding surface, and the microelectronic The workpiece is isolated between the second position of the heat source joint surface and the heat source is sized and adjusted when the first microelectronic workpiece is joined to the 15 paper sizes. Applicable to China Paper Standard (CNS) A4 (210 X 297) (Mm) (Please read the precautions on the back before filling this page) · Installation · -I line · 495885 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. Scope of patent application When the heat source is used, the microelectronics is heat-treated at a rate sufficient to heat-treat the microelectronics in the low-temperature process, and the heat is transferred to the microelectronics; and a workpiece transfer unit can be placed adjacent to the first and At least one of the second processing chamber body, the workpiece transfer unit may be moved relative to the first and second processing chamber bodies, and the workpiece transfer unit may further include a configuration set to 'when the workpiece transfer unit is relative to the first When moving with the second processing chamber body, the workpiece can be joined to at least a workpiece joining portion of a microelectronic workpiece. 63. The device according to item 62 of the scope of patent application, wherein the first processing chamber system is one of at least two first processing chamber bodies, and further wherein the workpiece transfer unit is one of at least two workpiece transfer units One, and one of the workpiece transfer units may be placed to move the first microelectronic workpiece between a first processing chamber body and the second processing chamber body, and the other workpiece transfer unit may be placed to independently The second microelectronic workpiece is moved between another first processing chamber body and the second processing chamber body. 64. The device according to item 62 of the scope of patent application, wherein the workpiece transfer unit is one of two workpiece transfer units, each of which is configured to support a single microelectronic workpiece. 65. The device according to item 62 of the scope of patent application, further comprising a device holder capable of supporting the first processing chamber body, the second processing chamber body and the workpiece transfer unit, and further wherein the second processing chamber system It can move relative to the device support and the workpiece transfer unit, so that when the workpiece transfer unit supports the microelectronic workpiece, the second processing chamber body can be aligned with the microelectronic workpiece. 66. The device described in item 62 of the scope of the patent application, where the second 16 _ This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling in this (Page) · Binder 495885 A8 B8 C8 D8 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 6. Patent application scope The processing chamber body can further include a row of heat sinks that can be moved relative to the heat source and contacted by the heat sink. The first position of the heat source is separated from the second position of the heat sink from the heat source. 67. The device as described in claim 66 of the scope of patent application, further comprising a single integrated carrier defining a single environment in which the first and second processing chamber systems are placed. 68. The device according to item 62 of the scope of patent application, wherein the first processing chamber system is configured to apply a material to the workpiece, remove the material from the workpiece uranium, wet the workpiece, and / Or dry the workpiece. 69. The device according to item 62 of the scope of patent application, wherein at least one first processing chamber body may include an application chamber body configured to apply a material to the microelectronic workpiece, and a configuration designed to remove the The microelectronic workpiece is etched to remove at least a part of the material of the etching chamber body. 70. The device according to item 62 of the scope of patent application, wherein at least one first processing chamber body may include an application chamber body configured to apply copper to the microelectronic workpiece, and one of the second processing chamber bodies Including an annealing chamber body configured to anneal the copper. 71. An apparatus for heat-treating a microelectronic workpiece, comprising: a workpiece holder that can be placed to engage and support the microelectronic workpiece; and a solid bonding surface that is placed to engage the microelectronic workpiece A surface heat source, and the heat source may further include a heat generator directly attached and / or integrated with the heat source, at least one of the heat source and the workpiece holder may be moved relative to the other to the microelectronic workpiece Contact this heat source and connect 17 ------------- Aw --- (Please read the precautions on the back before filling this page) Γ The size of the good paper is in accordance with Chinese National Standard (CNS) A4 (210 x 297 mm) 495885 A8 B8 C8 D8 VI. Application scope of patent (Please read the precautions on the back before filling this page) The first position of the surface Is separated from the microelectronic workpiece in a second position on the bonding surface, the heat source is dimensionally adjusted, and when the microelectronic workpiece is bonded to the heat source, the selected material of the microelectronic workpiece is heat-treated as needed At a rate that transfers heat to the microelectronic workpiece. 72. The device according to item 71 of the scope of patent application, further comprising a row of heat sinks coupled to a starter, and moved relative to the heat source at a first position where the heat sink is joined to the heat source, and The heat exhaust tank is detached between the second position of the heat source, and the starter can be coupled to a source of pressurized cooling fluid to move the starter. The starter has a fluid volume that passes through the heat exhaust tank according to the fluid. This cools the heat sink. 73. A method for heat-treating a microelectronic workpiece, comprising: bonding the microelectronic workpiece to a solid heat transfer surface of a heat source; using a heat generator directly attached and / or integrated with the heat source to conduct heat Extend to the heat source line, and transfer heat from its solid surface to the microelectronic workpiece at a rate sufficient to heat treat the microelectronic workpiece in a low temperature process; and detach the microelectronic workpiece from the solid surface. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 74. The method described in item 73 of the scope of patent application, further comprising: attaching a chamber cover adjacent to one side of the microelectronic workpiece to the supporting solid heat The conveying surface places a base adjacent to the opposite side of the microelectronic workpiece and at least partially encloses the microelectronic workpiece, where the microelectronic workpiece is placed between the chamber cover and the base. 75. The method of claim 73, further comprising cooling the microelectronic workpiece. ^ Paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 495885 A8 B8 C8 D8 The method further includes, when the heat source is bonded to the microelectronic workpiece, cooling the microelectronic workpiece by bonding the heat sink to the heat source. 77. The method according to item 73 of the scope of patent application, wherein the The heat extraction tank includes a compressible surface, and wherein joining the heat extraction tank to the heat source includes joining the compressible surface of the heat extraction tank to the heat source, and compressing the compressible surface from an uncompressed configuration to 78. The method described in claim 73 of the scope of patent application, further comprising: when the heat source is connected to the microelectronic workpiece, cooling by joining a first row of heat sinks to the heat source The microelectronic workpiece; and cooling the first row of heat sinks by joining the first row of heat sinks to the second row of heat sinks and supplying cooling liquid to the second row of heat sinks. The method described in item 1, wherein the microelectronic workpiece is one of a plurality of microelectronic workpieces, and further includes joining one microelectronic workpiece to the heat source at a time. 80. The method according to item 73 of the scope of patent application, which further includes By applying a vacuum state to the microelectronic workpiece, the microelectronic workpiece is tightly bonded to the heat transfer surface. 81. The method described in item 73 of the scope of patent application, which further includes by A clearing fluid is applied to the area of the workpiece to cleanly remove the oxidizing medium adjacent to the area of the microelectronic workpiece. 82. The method as described in item 73 of the scope of patent application, which further comprises heating the resistive heater to heat the Solid heat transfer surface. 19 (Please read the precautions on the back before filling in this page) • Binding V-Line 6. Scope of patent application 83. The method described in item 73 of the scope of patent application, further includes: (Please read the precautions on the back before filling this page) Use a resistance heater to heat the A solid heat transfer surface; and a connector attached to a heater connection terminal by size modulation to generate resistance heat to compensate for a conductive heat loss at the heater connection terminal. The method further includes: transmitting heat to the first area of the microelectronic workpiece at a first rate per unit area of the microelectronic workpiece; and transmitting heat to the first area of the microelectronic workpiece at a second rate per unit area of the microelectronic workpiece; In the second area of the microelectronic workpiece, the second rate per unit area is higher than the first rate per unit area. 85. The method according to item 73 of the scope of patent application, further comprising when the heat source is connected to the micro area. In the case of an electronic workpiece, cooling the microelectronic workpiece by joining the heat sink to the heat source, and wherein joining the heat sink to the heat source includes applying a pressurized cooling fluid to the heat sink to move the heat sink. Both the heat rejection tank and the cooling. 86. The method according to item 85 of the scope of patent application, further comprising independently controlling the pressure and flow rate of the cooling fluid to independently control the action and temperature of the heat source. Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 87. The method described in item 85 of the scope of patent application, wherein applying the pressurized cooling fluid includes filling a bellows coupled to the heat sink. 88. The method of claim 73, wherein the heat-removing tank is a first-row heat tank, and wherein the method further includes moving the first-row heat tank away from the heat source toward the second-row The heat sink is used to cool the first row of heat sinks. 20 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495885 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application 89. The method described above, wherein the heat is transferred from the solid surface includes transferring heat at a rate sufficient to anneal the selected material. 90. The method of claim 73, wherein the selected material includes a flux, and wherein heat is transferred from a solid surface, including transferring heat at a rate sufficient to redirect the flux. 91. The method of claim 73, wherein the selected material includes a photoresist layer, and wherein heat is transmitted by a solid surface, including a rate for repairing and / or baking the photoresist layer according to a sufficient supply. To transfer heat. 92. The method of claim 73, wherein the selected material comprises copper, and wherein transmitting heat to the microelectronic workpiece includes heating the microelectronic workpiece to a temperature from about 210 ° C to about 290 ° C. Hold for a period of about 30 seconds to about 90 seconds. 93. The method as described in claim 73, wherein heat treating the selected material includes thermally annealing a metal layer deposited electro-chemically on a microelectronic workpiece. 94. The method of claim 73, wherein the heat treating the selected material includes thermally annealing a metal layer deposited on the microelectronic workpiece by electroplating. 95. The method of claim 73, wherein the heat treating the selected material includes thermally annealing a metal layer that is electro-chemically deposited on the microelectronic workpiece by a copper layer. 96. The method described in item 73 of the scope of patent application, wherein the selected material is heat treated, including a copper layer electroplating method deposited on the microelectronics 21-(Please read the precautions on the back before filling this page) Word Γ This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm), printed by the employee's Intellectual Property Bureau of the Ministry of Economic Affairs 495885 Jaw C8 D8 VI. Patent Application The metal layer on the part is thermally annealed. 97. The method of claim 73, wherein transferring heat includes transferring heat to a copper portion of the microelectronic workpiece at a temperature of up to 450 degrees Celsius. 98. A method for forming a plurality of chambers to heat treat microelectronic workpieces, which may include: providing a second part having a first part, adjacent to the first part, and located on the first part and the second part A first processing chamber body of a first cavity between parts, the first cavity is configured to receive a single microelectronic workpiece; a first heat source is settled in the first cavity, and the first The heat source is configured to heat the microelectronic workpiece according to a low-temperature process; the third part adjacent to the second part is placed, and the second and third parts can define a configured setting therebetween To receive a second cavity of another microelectronic workpiece; and a second heat source is built in the second cavity, and the second heat source is configured to heat the microelectronic workpiece according to a low temperature process. 99. The method as described in item 98 of the scope of patent application, further comprising positioning the second part below the first part and positioning the third part below the second part. 100. The method according to item 98 of the scope of patent application, further comprising placing a first workpiece holder in the first cavity, the first workpiece holder is movable relative to the first heat source, and the The first microelectronic workpiece is bonded to the first heat source; and 22 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) (Please read the precautions on the back before filling this page) · --Line · 495885 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, please request the patent scope to place the second workpiece holder in the second cavity. The second workpiece holder can be opposite to the first cavity. The two heat sources move to join the second microelectronic workpiece to the second heat source. 101 · —A method for heat-treating a microelectronic workpiece, including: supporting the microelectronic workpiece relative to the heat source; transmitting heat from the heat source to the microelectronic workpiece in a low temperature program; and supporting the microelectronic workpiece relative to the heat source When the microelectronic workpiece is used, heat is selectively transmitted from the heat source to the heat sink, and the heat source and the microelectronic workpiece are cooled. 102. The method of claim 101, further comprising moving at least one of the microelectronic workpiece and the heat source to each other to transfer heat from the heat source to the microelectronic substrate. 103. The method according to item 101 of the scope of patent application, further comprising moving the heat sink from the disengaged position to the joint position relative to the heat source, and when the heat sink is in the joint position, the row A heat sink is coupled to the heat source to transfer heat from the heat source to the microelectronic workpiece. 104. The method according to item 101 of the scope of patent application, wherein the heat-removing tank is a first-row heat-removing tank, and wherein the method further comprises: adjoining the first-row heat-removing tank to the heat source by A second row of heat sinks to transfer heat away from the first row of heat sinks to the second row of heat sinks; and to transfer heat away from the second row of heat sinks. 105. The method of claim 101, wherein transferring heat from the heat source to the heat sink includes transferring heat without transferring a cooling fluid to the heat sink. 23. --- (Please read the notes on the back before filling this page) «Γ-Hui · fS scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 495885 Printed by A8 B8 C8 D8 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application 106 The method described in claim 101, wherein the heat removal tank is a first heat removal tank, and wherein the method further includes: bonding the second heat removal tank to a second heat source by moving the first heat removal tank away from the heat source. A heat sink to transfer heat from the first row of heat sinks to the second row of heat sinks; and applying a cooling fluid to the second row of heat sinks to transfer heat away from the second row of heat sinks. 107. The method according to item 101 of the patent application scope, wherein supporting the microelectronic workpiece includes a single workpiece holder not supporting more than one microelectronic workpiece at a time. 108. The method according to item 101 of the scope of patent application, further comprising drawing a vacuum through a hole and introducing the heat source to deviate the microelectronic workpiece toward the heat source. 109. A method for heat-treating a microelectronic workpiece, comprising: placing the microelectronic workpiece adjacent to the heat source; transmitting heat to a first region of the heat source at a first rate per unit area of the microelectronic workpiece in a low temperature process And at a second rate per unit area of the microelectronic workpiece, and transferring heat to the first area of the heat source in a low temperature process, wherein the second rate per unit area is higher than the first rate per unit area. 110. The method of claim 109, further comprising heating the microelectronic workpiece to a uniform temperature. 111. The method according to item 109 of the patent application scope, further comprising heating the microelectronic workpiece to a selected state temperature 'on the surface of the microelectronic workpiece at a temperature range of about 3 ° C to 4 ° C. 24 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) • Binding ·-Line · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives System 495885 A8 B8 C8 _ D8 VI. Patent Application Range 112 · The method described in item 109 of the patent application range, wherein the heat source is circular and has a center and radius, and further the first area is in accordance with Radially placed from the second area toward the inside, and in which heat is provided at the second rate per unit area, including providing heat at a fraction of approximately 7.5% higher than the first rate per unit area, the fraction corresponding to The distance from the second area to the center of the heat source divided by the divisor of the heat source radius. 113. The method of claim 109, wherein the heat source 槪 is circular and has a radius and a center of a circle. Furthermore, the method further includes a heat source based on a rate per unit area of the microelectronic substrate, and / or A heat source that will gradually increase from the center of the circle outwards at least in a direction of radiation and at least cross a portion of the heat source to generate electricity. 114. The method as described in claim 109, wherein the heat source has an external edge source and an internal edge facing inward from the external edge source, and wherein the method further includes a method based on a rate per unit area of the microelectronic substrate. The heat source, and / or the heat source that will be outward from the center of the circle in the direction of radiation, and at least gradually increase across a portion of the heat source, generate electricity according to this. II5. The method as described in claim 109, wherein the heat source includes at least one resistive element having a contact area for coupling to a power source, and further, providing heat to the second area includes providing heat to A heat source adjacent to the contact area. 116. The method according to item 109 of the scope of patent application, further comprising controlling power supplied to the first area of the heat source, and being independent of controlling power supplied to the second area. 117 · —A method for heat-treating microelectronic workpieces, including: 25 This paper is sized to the Chinese National Standard (CNS) A4 (21 × 297 mm) (Please read the precautions on the back before filling this page) Binding v 495885 Printed jaws C8 D8 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The scope of the patent application places the microelectronic workpiece closest to the heat source; the heat source transmits sufficient heat to the microelectronic workpiece for heat treatment in the low temperature process. A selected material for the microelectronic workpiece; placing the first row of heat sinks closest to the heat source to cool the heat source and the microelectronic workpiece; and placing the first row of heat sinks closest to a second row of heat sinks to Cool the first row of heat sinks. 118. The method of claim 117, wherein placing the microelectronic workpiece includes bonding the microelectronic workpiece to the heat source. 119. The method of claim 117, wherein placing the first row of heat sinks closest to the heat source includes joining the first row of heat sinks to the heat source. 120. The method of claim 117, wherein placing the first row of heat sinks closest to the second row of heat sinks includes joining the first row of heat sinks to the second row of heat sinks. 12h The method according to item 117 of the scope of patent application, further comprising moving the first row of heat sinks downward from the heat source to the second row of heat sinks. 122. The method as described in claim 117, wherein a selected material of the microelectronic workpiece is thermally processed, including annealing the selected material. 123. A method for heat-treating a microelectronic workpiece, comprising: placing the microelectronic workpiece in a first processing chamber; and when the microelectronic workpiece is located in the first processing chamber, performing a first step on the microelectronic workpiece. A process; removing the microelectronic workpiece from the first processing chamber body to a second processing 26 paper size applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) " (Please read the note on the back first (Please fill in this page again for matters). • ir.-Line. § 88495885 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Ⅵ. Patent application scope; and in the low temperature process, by heating the solid surface The microelectronic workpiece heats the microelectronic workpiece in the second processing chamber. 124. The method of claim 123, wherein cooling the microelectronic workpiece includes moving the heat sink to the heat source while the microelectronic workpiece is still engaged to the heat source, and then removing the heat sink Moving away from the heat source to cool the heat sink. 125. The method of claim 123, wherein the first processing chamber is one of at least two first processing chambers, and the second processing chamber is at least two second processing chambers One of them, and wherein the method further includes moving the first microelectronic workpiece between a first processing chamber body and a second processing chamber body, and independently moving a second microelectronic workpiece between the other first processing chamber Between the body and another second processing chamber body. 126. The method according to item 123 of the application, wherein a device support can support the first processing chamber body and the second processing chamber body, and wherein the workpiece transfer unit can move the microelectronic workpiece between the first and second processing chambers. Between the second processing chamber body, and wherein the method further includes moving the second processing chamber body relative to the device support and the workpiece transfer unit, so that when the workpiece transfer unit supports the microelectronic workpiece, the second processing chamber body The processing chamber body can be aligned with the microelectronic workpiece. 127. The method of claim 123, wherein heating the microelectronic workpiece 'includes heating the microelectronic workpiece to a temperature sufficient to anneal the selected material of the microelectronic workpiece. 128 · The method described in item 123 of the scope of patent application, in which the implementation of 27 ^ paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) " (Please read the precautions on the back before filling in this Page) • Xiang · _-line · 495885 A8 B8 C8 D8 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs VI. Patent application scope The first process includes applying a copper material to the microelectronic workpiece, and further heat treating the microelectronic workpiece. The electronic workpiece includes annealing the copper material applied to the microelectronic workpiece. 129. The method of claim 123, wherein performing the first process includes cleaning the microelectronic workpiece, etching the microelectronic workpiece, and / or applying a selected material to the microelectronic workpiece. 130. The method according to item 123 of the patent application scope, further comprising positioning the first and second processing chamber bodies and the microelectronic workpiece in a single integrated support body that can define a single environment. 131. A method for annealing microelectronic workpieces, including: applying a material layer to one of a plurality of microelectronic workpieces at a time in the application chamber; moving the microelectronic workpieces from the application chamber to the annealing chamber at least one at a time By moving each microelectronic workpiece toward a heat source, and bonding each microelectronic workpiece to the solid surface of the heat source to transfer heat to each microelectronic workpiece, thereby annealing the material applied to the microelectronic workpiece; A heat source is connected to a heat source by moving the heat sink to cool each microelectronic workpiece, while the microelectronic workpiece is still connected to the heat source; and the heat sink is joined to a function to cool by removing the heat source from the microelectronic workpiece. Module, and provides cooling fluid to flow into the cooling module to cool the heat sink. 132. The method described in item 131 of the scope of patent application, which further includes the following: 28 (Please read the precautions on the back before filling out this page) Binding · -line · ^ Paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 public love) 495885 A8 B8 C8 D8 VI. Application scope of patent By moving one of the chamber covers away from the base of a certain chamber, the annealing chamber is opened; only a single microelectronic workpiece is inserted Placed in the chamber; supporting the microelectronic substrate on a movable substrate support in the chamber; toward the base; and closing the chamber to join the substrate support; and moving the relative to the heat source Substrate holder and microelectronic workpiece. 133 · —A method for heat-treating a microelectronic workpiece, comprising: bonding the microelectronic workpiece to a solid heat-conducting surface of a heat source; using a heat generator directly attached and / or integrated with the heat source to introduce the heat source Transmitting sufficient heat from the solid surface to the microelectronic workpiece to heat treat a selected material of the microelectronic workpiece; and removing the microelectronic workpiece from the solid surface. I34. The method as described in item 1 of the scope of the patent application, which comprises heating the solid heat-conducting surface with a resistive heater. (Please read the precautions on the back before filling out this page.) Assembly · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm)