TW353200B - Plasma processing method - Google Patents

Plasma processing method

Info

Publication number
TW353200B
TW353200B TW086117040A TW86117040A TW353200B TW 353200 B TW353200 B TW 353200B TW 086117040 A TW086117040 A TW 086117040A TW 86117040 A TW86117040 A TW 86117040A TW 353200 B TW353200 B TW 353200B
Authority
TW
Taiwan
Prior art keywords
processing
plasma
processing method
plasma processing
previous
Prior art date
Application number
TW086117040A
Other languages
English (en)
Inventor
Takashi Akahori
Risa Nakase
Shinsuke Oka
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TW353200B publication Critical patent/TW353200B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW086117040A 1996-11-14 1997-11-14 Plasma processing method TW353200B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8320915A JPH10144668A (ja) 1996-11-14 1996-11-14 プラズマ処理方法

Publications (1)

Publication Number Publication Date
TW353200B true TW353200B (en) 1999-02-21

Family

ID=18126697

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117040A TW353200B (en) 1996-11-14 1997-11-14 Plasma processing method

Country Status (7)

Country Link
US (1) US6320154B1 (zh)
EP (1) EP0933803B1 (zh)
JP (1) JPH10144668A (zh)
KR (1) KR19990077238A (zh)
DE (1) DE69718808T2 (zh)
TW (1) TW353200B (zh)
WO (1) WO1998021746A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI826683B (zh) * 2019-05-15 2023-12-21 美商應用材料股份有限公司 形成膜時減少腔室殘留物的方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100410421C (zh) * 2001-05-04 2008-08-13 拉姆研究公司 处理室残留物的两步式等离子清洗
KR100446619B1 (ko) * 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
GB2396053B (en) * 2002-10-23 2006-03-29 Bosch Gmbh Robert Device and process for anisotropic plasma etching of a substrate,in particular a silicon body
WO2005045916A1 (ja) * 2003-11-11 2005-05-19 Tokyo Electron Limited 基板処理方法
US7581549B2 (en) 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
JP4593413B2 (ja) * 2005-09-15 2010-12-08 株式会社日立ハイテクノロジーズ プラズマ処理方法及び処理装置
JP2010114362A (ja) * 2008-11-10 2010-05-20 Tokyo Electron Ltd パーティクル付着抑制方法及び基板処理装置
JP5227367B2 (ja) * 2010-06-01 2013-07-03 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP5651484B2 (ja) * 2011-01-05 2015-01-14 株式会社アルバック プラズマ処理方法
JP5677482B2 (ja) * 2013-02-28 2015-02-25 東京エレクトロン株式会社 パーティクル付着抑制方法及び基板処理装置
JP6862291B2 (ja) 2017-06-16 2021-04-21 株式会社小糸製作所 車両用灯具
JP2019009305A (ja) 2017-06-26 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
JP6902450B2 (ja) * 2017-10-10 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法
JP2022027040A (ja) * 2020-07-31 2022-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697660B2 (ja) 1985-03-23 1994-11-30 日本電信電話株式会社 薄膜形成方法
JPS6243335A (ja) 1985-08-21 1987-02-25 Arita Seisakusho:Kk 自動車のドアが開く事を表示する装置
EP0565212A2 (en) * 1986-12-19 1993-10-13 Applied Materials, Inc. Iodine etch process for silicon and silicides
JPS63233549A (ja) 1987-03-20 1988-09-29 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成法
JPS6432631A (en) 1987-07-29 1989-02-02 Toshiba Corp Etching device
US4911814A (en) * 1988-02-08 1990-03-27 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
JPH033380A (ja) 1989-05-31 1991-01-09 Mitsubishi Electric Corp 気体レーザ装置
US4975146A (en) * 1989-09-08 1990-12-04 Motorola Inc. Plasma removal of unwanted material
JPH04271122A (ja) 1991-02-27 1992-09-28 Fuji Electric Co Ltd プラズマ処理装置
JP3182615B2 (ja) 1991-04-15 2001-07-03 アネルバ株式会社 プラズマ処理方法および装置
JPH0529285A (ja) 1991-07-15 1993-02-05 Fujitsu Ltd クリーニング方法及び半導体製造装置
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
JP3077124B2 (ja) 1992-11-09 2000-08-14 三菱電機株式会社 プラズマ反応装置
JPH06196421A (ja) 1992-12-23 1994-07-15 Sumitomo Metal Ind Ltd プラズマ装置
JPH06283484A (ja) 1993-03-26 1994-10-07 Sumitomo Metal Ind Ltd プラズマ装置のクリーニング方法
US5456796A (en) * 1993-06-02 1995-10-10 Applied Materials, Inc. Control of particle generation within a reaction chamber
JPH0786242A (ja) * 1993-09-10 1995-03-31 Fujitsu Ltd 半導体装置の製造方法
JP3319083B2 (ja) * 1993-10-15 2002-08-26 ソニー株式会社 プラズマ処理方法
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
US5882423A (en) * 1994-02-03 1999-03-16 Harris Corporation Plasma cleaning method for improved ink brand permanency on IC packages
US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
JPH08176854A (ja) 1994-12-22 1996-07-09 Nissin Electric Co Ltd プラズマ処理方法
JP2962181B2 (ja) * 1995-02-01 1999-10-12 ヤマハ株式会社 ドライエッチング方法及び装置
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
JP3650248B2 (ja) * 1997-03-19 2005-05-18 東京エレクトロン株式会社 プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI826683B (zh) * 2019-05-15 2023-12-21 美商應用材料股份有限公司 形成膜時減少腔室殘留物的方法

Also Published As

Publication number Publication date
WO1998021746A1 (fr) 1998-05-22
EP0933803A4 (en) 1999-10-20
EP0933803B1 (en) 2003-01-29
DE69718808T2 (de) 2003-09-04
EP0933803A1 (en) 1999-08-04
DE69718808D1 (de) 2003-03-06
US6320154B1 (en) 2001-11-20
KR19990077238A (ko) 1999-10-25
JPH10144668A (ja) 1998-05-29

Similar Documents

Publication Publication Date Title
TW353200B (en) Plasma processing method
EP0817237A3 (en) Methods and apparatus for treating workpieces with plasmas
TW365018B (en) Tandem process chamber
EP1003112A3 (en) Methods and apparatus for interpreting user selections in the context of a relation distributed as a set of a orthogonalized sub-relations
TW376547B (en) Method and apparatus for plasma processing
GB2343550A (en) Cluster tool method and apparatus using plasma immersion ion implantation
TW358978B (en) Method to etch a destruction-area on a semiconductor substrate-edge as well as an etching equipment
TW349242B (en) Plasma processing method and apparatus
EP0725164A3 (en) Method and apparatus for generating plasma and semiconductor processing methods
TW283250B (en) Plasma enhanced chemical processing reactor and method
TW344936B (en) Plasma apparatus
TW324834B (en) Method for forming membrane
KR920010777A (ko) 기판처리장치 및 기판 처리방법
ATE420454T1 (de) Gepulstes plasmabehandlungsverfahren und vorrichtung
ES8301254A1 (es) &#34;un procedimiento para aumentar la resistencia al desprendimiento de un polimero revestido con metal&#34;.
DE60015270D1 (de) Verfahren und gerät zur stabilisierung eines plasmas
TW343360B (en) Plasma reactor process for high photoresist selectivity and improved polymer adhesion
TW371776B (en) Laser irradiation apparatus and method
TW375765B (en) Method for reducing particles deposited onto a semiconductor wafer during plasma processing
JP2003027246A5 (zh)
AU2737301A (en) An insitu post etch process to remove remaining photoresist and residual sidewall passivation
TW329023B (en) Non-plasma halogenated gas flow
GR3034871T3 (en) Method and apparatus for cleaning a metal substrate
TW354337B (en) Method for vacuum removal of slag on the surface of molten metal and apparatus for the same
TW350099B (en) IC microfilm process

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees