TW343307B - Nonvolatile memory system and nonvolatile semiconductor memory - Google Patents
Nonvolatile memory system and nonvolatile semiconductor memoryInfo
- Publication number
- TW343307B TW343307B TW086108660A TW86108660A TW343307B TW 343307 B TW343307 B TW 343307B TW 086108660 A TW086108660 A TW 086108660A TW 86108660 A TW86108660 A TW 86108660A TW 343307 B TW343307 B TW 343307B
- Authority
- TW
- Taiwan
- Prior art keywords
- state
- memory cells
- command
- memory
- nonvolatile
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17896596 | 1996-07-09 | ||
JP12679397A JP3976839B2 (ja) | 1996-07-09 | 1997-05-16 | 不揮発性メモリシステムおよび不揮発性半導体メモリ |
Publications (1)
Publication Number | Publication Date |
---|---|
TW343307B true TW343307B (en) | 1998-10-21 |
Family
ID=26462918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086108660A TW343307B (en) | 1996-07-09 | 1997-06-20 | Nonvolatile memory system and nonvolatile semiconductor memory |
Country Status (4)
Country | Link |
---|---|
US (16) | US5867428A (zh) |
JP (1) | JP3976839B2 (zh) |
KR (1) | KR100479632B1 (zh) |
TW (1) | TW343307B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8447914B2 (en) | 2008-03-01 | 2013-05-21 | Kabushiki Kaisha Toshiba | Memory system managing the number of times of erasing |
Families Citing this family (130)
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KR980011503A (ko) | 1998-04-30 |
US6683811B2 (en) | 2004-01-27 |
US20060120164A1 (en) | 2006-06-08 |
US20040114434A1 (en) | 2004-06-17 |
US5982668A (en) | 1999-11-09 |
US7145805B2 (en) | 2006-12-05 |
US20020136056A1 (en) | 2002-09-26 |
US20020034099A1 (en) | 2002-03-21 |
US20060268610A1 (en) | 2006-11-30 |
JPH1079197A (ja) | 1998-03-24 |
US20090003085A1 (en) | 2009-01-01 |
US6392932B1 (en) | 2002-05-21 |
US20020054511A1 (en) | 2002-05-09 |
US20100182847A1 (en) | 2010-07-22 |
US20030156459A1 (en) | 2003-08-21 |
JP3976839B2 (ja) | 2007-09-19 |
US8004905B2 (en) | 2011-08-23 |
US6567311B2 (en) | 2003-05-20 |
US6023425A (en) | 2000-02-08 |
US5867428A (en) | 1999-02-02 |
US7405979B2 (en) | 2008-07-29 |
US6157573A (en) | 2000-12-05 |
US6385092B1 (en) | 2002-05-07 |
US7072222B2 (en) | 2006-07-04 |
US6873552B2 (en) | 2005-03-29 |
US20080008009A1 (en) | 2008-01-10 |
US7283399B2 (en) | 2007-10-16 |
US7697345B2 (en) | 2010-04-13 |
KR100479632B1 (ko) | 2005-07-28 |
US20050157550A1 (en) | 2005-07-21 |
US6452838B1 (en) | 2002-09-17 |
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