TW336995B - Formatiion of atomic scale vertical features for topographic instrument calibration - Google Patents

Formatiion of atomic scale vertical features for topographic instrument calibration

Info

Publication number
TW336995B
TW336995B TW085110842A TW85110842A TW336995B TW 336995 B TW336995 B TW 336995B TW 085110842 A TW085110842 A TW 085110842A TW 85110842 A TW85110842 A TW 85110842A TW 336995 B TW336995 B TW 336995B
Authority
TW
Taiwan
Prior art keywords
layer
features
formatiion
topographic
instrument calibration
Prior art date
Application number
TW085110842A
Other languages
English (en)
Inventor
R Laird Ellen
Murray Bullis W
J Greed James Jr
W Scheer Bradley
Original Assignee
Vlsi Standards Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vlsi Standards Inc filed Critical Vlsi Standards Inc
Application granted granted Critical
Publication of TW336995B publication Critical patent/TW336995B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B3/00—Measuring instruments characterised by the use of mechanical techniques
    • G01B3/30—Bars, blocks, or strips in which the distance between a pair of faces is fixed, although it may be preadjustable, e.g. end measure, feeler strip
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/28—Measuring arrangements characterised by the use of mechanical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/93—Detection standards; Calibrating baseline adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q40/00—Calibration, e.g. of probes
    • G01Q40/02—Calibration standards and methods of fabrication thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Length-Measuring Instruments Using Mechanical Means (AREA)
TW085110842A 1995-10-06 1996-09-05 Formatiion of atomic scale vertical features for topographic instrument calibration TW336995B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/539,973 US5599464A (en) 1995-10-06 1995-10-06 Formation of atomic scale vertical features for topographic instrument calibration

Publications (1)

Publication Number Publication Date
TW336995B true TW336995B (en) 1998-07-21

Family

ID=24153433

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110842A TW336995B (en) 1995-10-06 1996-09-05 Formatiion of atomic scale vertical features for topographic instrument calibration

Country Status (4)

Country Link
US (2) US5599464A (zh)
JP (1) JP3919854B2 (zh)
KR (1) KR970023953A (zh)
TW (1) TW336995B (zh)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534359A (en) * 1994-06-07 1996-07-09 International Business Machines Corporation Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it
DE19709255A1 (de) 1997-03-06 1998-09-10 Wacker Siltronic Halbleitermat Standard zur Kalibrierung und Überprüfung eines Oberflächeninspektions-Gerätes und Verfahren zur Herstellung des Standards
US6146541A (en) * 1997-05-02 2000-11-14 Motorola, Inc. Method of manufacturing a semiconductor device that uses a calibration standard
US5955654A (en) * 1997-08-07 1999-09-21 Vlsi Standards, Inc. Calibration standard for microroughness measuring instruments
US6016684A (en) * 1998-03-10 2000-01-25 Vlsi Standards, Inc. Certification of an atomic-level step-height standard and instrument calibration with such standards
US6239590B1 (en) 1998-05-26 2001-05-29 Micron Technology, Inc. Calibration target for calibrating semiconductor wafer test systems
US6358860B1 (en) 1999-10-07 2002-03-19 Vlsi Standards, Inc. Line width calibration standard manufacturing and certifying method
US6538730B2 (en) * 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
US6674092B1 (en) * 2002-07-12 2004-01-06 Lsi Logic Corporation Thin film CMOS calibration standard having protective cover layer
US6869480B1 (en) 2002-07-17 2005-03-22 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method for the production of nanometer scale step height reference specimens
KR100964400B1 (ko) * 2003-10-01 2010-06-17 삼성전자주식회사 반도체 소자의 콘택 구조체
CN100365399C (zh) * 2003-12-11 2008-01-30 中国科学院上海技术物理研究所 一种用于遥感仪器光学系统光谱定标的自校准方法
US7096711B2 (en) * 2004-05-12 2006-08-29 Veeco Instruments Inc. Methods of fabricating structures for characterizing tip shape of scanning probe microscope probes and structures fabricated thereby
JP4505634B2 (ja) * 2004-08-13 2010-07-21 国立大学法人東北大学 半導体を使用する電子部品の評価方法及び半導体を使用する電子部品の管理方法
US7323350B2 (en) * 2004-09-30 2008-01-29 Hitachi Global Storage Technologies Netherlands B.V. Method of fabricating thin film calibration features for electron/ion beam image based metrology
FR2888833B1 (fr) 2005-07-22 2007-08-24 Commissariat Energie Atomique Procede de realisation d'etalons de bruit de fond diffus comportant des nano-structures sur une couche mince isolante
US20080055597A1 (en) * 2006-08-29 2008-03-06 Jie-Wei Sun Method for characterizing line width roughness (lwr) of printed features
US7605915B2 (en) * 2007-04-05 2009-10-20 Kla-Tencor Corporation System and method to create haze standard
US8619528B2 (en) 2011-08-31 2013-12-31 Seagate Technology Llc Method and system for optical calibration
JP5826000B2 (ja) 2011-11-30 2015-12-02 昭和電工株式会社 磁気記録媒体用基板、磁気記録媒体、磁気記録媒体用基板の製造方法及び表面検査方法
RU2540000C1 (ru) * 2013-10-01 2015-01-27 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) Способ изготовления ступенчатого высотного калибровочного стандарта для профилометрии и сканирующей зондовой микроскопии
CN103954230B (zh) * 2014-02-13 2015-08-19 同济大学 一种校准光学表面轮廓仪有效空间分辨率的方法
CN103983204B (zh) * 2014-02-13 2015-08-26 同济大学 利用白噪声psd校准光学表面轮廓仪有效空间分辨率的方法
JP6299668B2 (ja) 2015-05-13 2018-03-28 信越半導体株式会社 ヘイズの評価方法
CN105004256B (zh) * 2015-07-09 2018-03-27 长春轨道客车股份有限公司 表面不涂装不锈钢车侧墙平度检测工艺
CN105480940B (zh) * 2015-12-08 2017-03-29 中国航空工业集团公司北京长城计量测试技术研究所 一种三维纳米节距样板及其制备方法
RU2649058C1 (ru) * 2017-02-15 2018-03-29 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) Способ изготовления ступенчатого высотного калибровочного эталона и ступенчатый высотный калибровочный эталон
US10557803B2 (en) 2018-06-26 2020-02-11 Onto Innovation Inc. Surface height determination of transparent film
CN110054150A (zh) * 2019-04-29 2019-07-26 西安交通大学 一种校准用纳米几何量标准样板及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4386850A (en) * 1980-12-23 1983-06-07 Rca Corporation Calibration device and method for an optical defect scanner
US4601576A (en) * 1983-12-09 1986-07-22 Tencor Instruments Light collector for optical contaminant and flaw detector
US4615762A (en) * 1985-04-30 1986-10-07 Rca Corporation Method for thinning silicon
JPS6420428A (en) * 1987-07-15 1989-01-24 Fujitsu Ltd Formation of acicular member
US5198869A (en) * 1990-10-15 1993-03-30 Vlsi Standards, Inc. Reference wafer for haze calibration
US5169488A (en) * 1990-10-25 1992-12-08 International Business Machines Corporation Method of forming planarized, reusable calibration grids
JP2705338B2 (ja) * 1991-03-18 1998-01-28 富士通株式会社 測長ｓｅｍ用基準サンプルの製造方法
IT1248534B (it) * 1991-06-24 1995-01-19 Sgs Thomson Microelectronics Procedimento per la realizzazione di strutture di calibrazione particolarmente per la taratura di macchine di misura del disallineamento in circuiti integrati in genere.
US5383018A (en) * 1992-12-28 1995-01-17 National Semiconductor Corporation Apparatus and method for calibration of patterned wafer scanners
US5520769A (en) * 1994-12-07 1996-05-28 Advanced Micro Devices, Inc. Method for measuring concentration of dopant within a semiconductor substrate

Also Published As

Publication number Publication date
US5677765A (en) 1997-10-14
US5599464A (en) 1997-02-04
KR970023953A (ko) 1997-05-30
JPH09152324A (ja) 1997-06-10
JP3919854B2 (ja) 2007-05-30

Similar Documents

Publication Publication Date Title
TW336995B (en) Formatiion of atomic scale vertical features for topographic instrument calibration
EP1014034A3 (de) Integrierter optoelektronischer Sensor und Verfahren zu dessen Herstellung
CN101772733B (zh) 纳米压印工艺中用于衬底的对齐系统和方法
MY109605A (en) Method for producing semiconductor device having alignment mark.
WO2002013232A3 (en) Measurement of critical dimensions using x-rays
ES531211A0 (es) Perfeccionamientos en los aparatos de radiacion nuclear y metodo correspondiente
TW328147B (en) Semiconductor device fabrication
DE59010811D1 (de) Integriert optische Anordnung mit wenigstens einem auf einem Substrat aus Halbleitermaterial integrierten optischen Wellenleiter
GB0006318D0 (en) Radiation detector
TW352420B (en) Back alignment mark for half tone phase shift mask
DE3577622D1 (de) Verfahren zur herstellung integrierter schaltungen unter einbeziehung von schritten zum nachweis von getterstellen.
TW350969B (en) Self-aligned alignment marks for phase-shifting masks
WO2003107398A3 (en) TECHNIQUES FOR CHARACTERIZING ISODENSITY EFFECTS FOR THE MANUFACTURE OF MICRODISPOSITIVES
EP0618508A4 (en) IMAGE RECEIVING LAYER CONSISTING OF NON-MONOCRISTALLINE SILICON, AND OF COLUMN-LIKE STRUCTURAL AREAS AND THEIR METHOD FOR THE PRODUCTION THEREOF.
TW338176B (en) Improved delibeation pattern for epitaxial depositions
JPS5293279A (en) Forming method for silicon gate electrode
JPS57115841A (en) Probing method
TW328160B (en) The semiconductor device for re-surf diffusion
JPS5759346A (en) Auxiliary holder for semiconductor substrate
JPS5342682A (en) Junction type field effect transistor and its production
DE59902340D1 (de) Sensor in dünnfilmbauweise
TW330988B (en) The photomask structure of semiconductor lithography processes
JPS6476046A (en) Pattern forming material
JPS5660026A (en) Semiconductor device
JPS55124006A (en) Direction discriminating method of minute inclination

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees