DE3577622D1 - Verfahren zur herstellung integrierter schaltungen unter einbeziehung von schritten zum nachweis von getterstellen. - Google Patents

Verfahren zur herstellung integrierter schaltungen unter einbeziehung von schritten zum nachweis von getterstellen.

Info

Publication number
DE3577622D1
DE3577622D1 DE8585307851T DE3577622T DE3577622D1 DE 3577622 D1 DE3577622 D1 DE 3577622D1 DE 8585307851 T DE8585307851 T DE 8585307851T DE 3577622 T DE3577622 T DE 3577622T DE 3577622 D1 DE3577622 D1 DE 3577622D1
Authority
DE
Germany
Prior art keywords
integrated circuits
detecting
including steps
substrate
producing integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585307851T
Other languages
English (en)
Inventor
Michael Henry Nemiroff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Unisys Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisys Corp filed Critical Unisys Corp
Application granted granted Critical
Publication of DE3577622D1 publication Critical patent/DE3577622D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Manufacturing & Machinery (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
DE8585307851T 1984-11-05 1985-10-30 Verfahren zur herstellung integrierter schaltungen unter einbeziehung von schritten zum nachweis von getterstellen. Expired - Fee Related DE3577622D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/668,512 US4575922A (en) 1984-11-05 1984-11-05 Method of fabricating integrated circuits incorporating steps to detect presence of gettering sites

Publications (1)

Publication Number Publication Date
DE3577622D1 true DE3577622D1 (de) 1990-06-13

Family

ID=24682599

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585307851T Expired - Fee Related DE3577622D1 (de) 1984-11-05 1985-10-30 Verfahren zur herstellung integrierter schaltungen unter einbeziehung von schritten zum nachweis von getterstellen.

Country Status (5)

Country Link
US (1) US4575922A (de)
EP (1) EP0181737B1 (de)
JP (1) JPS61174728A (de)
AT (1) ATE52636T1 (de)
DE (1) DE3577622D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
US4777146A (en) * 1987-02-24 1988-10-11 American Telephone And Telegraph Company, At&T Bell Laboratories Fabrication process involving semi-insulating material
US4873555A (en) * 1987-06-08 1989-10-10 University Of Pittsburgh Of The Commonwealth System Of Higher Education Intraband quantum well photodetector and associated method
US5233191A (en) * 1990-04-02 1993-08-03 Hitachi, Ltd. Method and apparatus of inspecting foreign matters during mass production start-up and mass production line in semiconductor production process
US5463459A (en) 1991-04-02 1995-10-31 Hitachi, Ltd. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
US5306345A (en) * 1992-08-25 1994-04-26 Particle Solutions Deposition chamber for deposition of particles on semiconductor wafers
WO2000055608A2 (en) 1999-03-16 2000-09-21 Qinetiq Limited Method and apparatus for the analysis of material composition
US7079975B1 (en) * 2001-04-30 2006-07-18 Advanced Micro Devices, Inc. Scatterometry and acoustic based active control of thin film deposition process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021675A (en) * 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
US4033787A (en) * 1975-10-06 1977-07-05 Honeywell Inc. Fabrication of semiconductor devices utilizing ion implantation
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
US4110625A (en) * 1976-12-20 1978-08-29 International Business Machines Corporation Method and apparatus for monitoring the dose of ion implanted into a target by counting emitted X-rays
US4332833A (en) * 1980-02-29 1982-06-01 Bell Telephone Laboratories, Incorporated Method for optical monitoring in materials fabrication
US4392893A (en) * 1980-11-17 1983-07-12 Texas Instruments Incorporated Method for controlling characteristics of a semiconductor integrated by circuit X-ray bombardment

Also Published As

Publication number Publication date
JPS61174728A (ja) 1986-08-06
ATE52636T1 (de) 1990-05-15
EP0181737B1 (de) 1990-05-09
US4575922A (en) 1986-03-18
EP0181737A2 (de) 1986-05-21
EP0181737A3 (en) 1987-05-20
JPH0428140B2 (de) 1992-05-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee