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Preparing Plates And Mask In Photomechanical Process
(AREA)
Abstract
A photomask structure used for semiconductor lithography processes, this photomask structure at least includes: - Photomask base, is composed by diaphenity material; - At least one photomask pattern is formed on photomask base for forming pattern on wafer. This photomask is composed by non-diaphenity conductivity material; - Conductive thin layer, is formed on photomask base and photomask pattern.
TW086104551A1997-04-091997-04-09The photomask structure of semiconductor lithography processes
TW330988B
(en)
Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus