JPS5293279A - Forming method for silicon gate electrode - Google Patents

Forming method for silicon gate electrode

Info

Publication number
JPS5293279A
JPS5293279A JP1014676A JP1014676A JPS5293279A JP S5293279 A JPS5293279 A JP S5293279A JP 1014676 A JP1014676 A JP 1014676A JP 1014676 A JP1014676 A JP 1014676A JP S5293279 A JPS5293279 A JP S5293279A
Authority
JP
Japan
Prior art keywords
gate electrode
forming method
silicon gate
phosphorus
diffusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1014676A
Other languages
Japanese (ja)
Inventor
Hiroshi Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1014676A priority Critical patent/JPS5293279A/en
Publication of JPS5293279A publication Critical patent/JPS5293279A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enhance a yielding and an accuracy of the fine gate electrode, by diffusing a phosphorus in a multi crystal silicon layer containing the density boron impurity and by selecting the phosphorus diffusion part only and chemical-etching it.
COPYRIGHT: (C)1977,JPO&Japio
JP1014676A 1976-02-02 1976-02-02 Forming method for silicon gate electrode Pending JPS5293279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1014676A JPS5293279A (en) 1976-02-02 1976-02-02 Forming method for silicon gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1014676A JPS5293279A (en) 1976-02-02 1976-02-02 Forming method for silicon gate electrode

Publications (1)

Publication Number Publication Date
JPS5293279A true JPS5293279A (en) 1977-08-05

Family

ID=11742134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1014676A Pending JPS5293279A (en) 1976-02-02 1976-02-02 Forming method for silicon gate electrode

Country Status (1)

Country Link
JP (1) JPS5293279A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538560U (en) * 1978-09-01 1980-03-12
JPS5546570A (en) * 1978-09-30 1980-04-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of fabricating mos semiconductor device
JPS6313377A (en) * 1986-07-03 1988-01-20 Nec Corp Manufacture of ldd type field-effect transistor
DE102017110914A1 (en) 2016-09-16 2018-03-22 Denso Corporation Emission control device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538560U (en) * 1978-09-01 1980-03-12
JPS598855Y2 (en) * 1978-09-01 1984-03-19 大阪電気株式会社 wire feeding device
JPS5546570A (en) * 1978-09-30 1980-04-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of fabricating mos semiconductor device
JPS6313377A (en) * 1986-07-03 1988-01-20 Nec Corp Manufacture of ldd type field-effect transistor
DE102017110914A1 (en) 2016-09-16 2018-03-22 Denso Corporation Emission control device

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