JPS5293279A - Forming method for silicon gate electrode - Google Patents
Forming method for silicon gate electrodeInfo
- Publication number
- JPS5293279A JPS5293279A JP1014676A JP1014676A JPS5293279A JP S5293279 A JPS5293279 A JP S5293279A JP 1014676 A JP1014676 A JP 1014676A JP 1014676 A JP1014676 A JP 1014676A JP S5293279 A JPS5293279 A JP S5293279A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- forming method
- silicon gate
- phosphorus
- diffusing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To enhance a yielding and an accuracy of the fine gate electrode, by diffusing a phosphorus in a multi crystal silicon layer containing the density boron impurity and by selecting the phosphorus diffusion part only and chemical-etching it.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1014676A JPS5293279A (en) | 1976-02-02 | 1976-02-02 | Forming method for silicon gate electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1014676A JPS5293279A (en) | 1976-02-02 | 1976-02-02 | Forming method for silicon gate electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5293279A true JPS5293279A (en) | 1977-08-05 |
Family
ID=11742134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1014676A Pending JPS5293279A (en) | 1976-02-02 | 1976-02-02 | Forming method for silicon gate electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5293279A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5538560U (en) * | 1978-09-01 | 1980-03-12 | ||
JPS5546570A (en) * | 1978-09-30 | 1980-04-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of fabricating mos semiconductor device |
JPS6313377A (en) * | 1986-07-03 | 1988-01-20 | Nec Corp | Manufacture of ldd type field-effect transistor |
DE102017110914A1 (en) | 2016-09-16 | 2018-03-22 | Denso Corporation | Emission control device |
-
1976
- 1976-02-02 JP JP1014676A patent/JPS5293279A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5538560U (en) * | 1978-09-01 | 1980-03-12 | ||
JPS598855Y2 (en) * | 1978-09-01 | 1984-03-19 | 大阪電気株式会社 | wire feeding device |
JPS5546570A (en) * | 1978-09-30 | 1980-04-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of fabricating mos semiconductor device |
JPS6313377A (en) * | 1986-07-03 | 1988-01-20 | Nec Corp | Manufacture of ldd type field-effect transistor |
DE102017110914A1 (en) | 2016-09-16 | 2018-03-22 | Denso Corporation | Emission control device |
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