JPS6476046A - Pattern forming material - Google Patents
Pattern forming materialInfo
- Publication number
- JPS6476046A JPS6476046A JP23246887A JP23246887A JPS6476046A JP S6476046 A JPS6476046 A JP S6476046A JP 23246887 A JP23246887 A JP 23246887A JP 23246887 A JP23246887 A JP 23246887A JP S6476046 A JPS6476046 A JP S6476046A
- Authority
- JP
- Japan
- Prior art keywords
- upper layer
- layered structure
- layer material
- pattern forming
- resolution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Silicon Polymers (AREA)
Abstract
PURPOSE:To obtain an upper layer material for a two layered structure having high sensitivity, resolution, and resistance to oxygen plasma by constituting the upper layer material of a specified three-dimensional chiral siloxane. CONSTITUTION:The title pattern forming material consists of a tree-dimensional chiral silocane expressed by formula I. In formula I, R is a 1-4C alkyl group, 2-3C alkenyl group, cyclohexyl group, or a phenyl group; n is 4, 6, 8, 10 or 12. Polysilsesquioxane is utilized for a material for electron beam negative resist having two layered structure permitting formation of a pattern having always submicron dimension on a substrate having large difference of level. By this method, an upper layer material for a two layered structure resist having high sensitivity, resolution, and resistance to oxygen plasma is obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62232468A JP2572073B2 (en) | 1987-09-18 | 1987-09-18 | Pattern forming material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62232468A JP2572073B2 (en) | 1987-09-18 | 1987-09-18 | Pattern forming material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6476046A true JPS6476046A (en) | 1989-03-22 |
JP2572073B2 JP2572073B2 (en) | 1997-01-16 |
Family
ID=16939770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62232468A Expired - Fee Related JP2572073B2 (en) | 1987-09-18 | 1987-09-18 | Pattern forming material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2572073B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2009069465A1 (en) * | 2007-11-30 | 2011-04-14 | 昭和電工株式会社 | Curable composition for transfer material and method for forming fine pattern using the composition |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI338701B (en) * | 2002-09-30 | 2011-03-11 | Nippon Steel Chemical Co | Cage-type silsesquioxanes resin cotaining functional group and manufacture method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60108842A (en) * | 1983-11-18 | 1985-06-14 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS60108841A (en) * | 1983-11-18 | 1985-06-14 | Mitsubishi Electric Corp | Photosensitive heat resistant material |
-
1987
- 1987-09-18 JP JP62232468A patent/JP2572073B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60108842A (en) * | 1983-11-18 | 1985-06-14 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS60108841A (en) * | 1983-11-18 | 1985-06-14 | Mitsubishi Electric Corp | Photosensitive heat resistant material |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2009069465A1 (en) * | 2007-11-30 | 2011-04-14 | 昭和電工株式会社 | Curable composition for transfer material and method for forming fine pattern using the composition |
JP5258788B2 (en) * | 2007-11-30 | 2013-08-07 | 昭和電工株式会社 | Curable composition for transfer material and method for forming fine pattern using the composition |
Also Published As
Publication number | Publication date |
---|---|
JP2572073B2 (en) | 1997-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |