JPS5511347A - Manufacture of dielectric insulated separation substrate - Google Patents
Manufacture of dielectric insulated separation substrateInfo
- Publication number
- JPS5511347A JPS5511347A JP8393778A JP8393778A JPS5511347A JP S5511347 A JPS5511347 A JP S5511347A JP 8393778 A JP8393778 A JP 8393778A JP 8393778 A JP8393778 A JP 8393778A JP S5511347 A JPS5511347 A JP S5511347A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- grooves
- wafer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To obtain substrates almost without pinhole through the process consisting providing separating grooves on the surface of a monocrystalline wafer, covering the whole surface of said substrate with SiO2 film, placing said substrate in an epitaxial formation furnace for the formation of SiO2 and polycrystalline Si layers on said film by CVD method, and alternatively laying a required quantity of said layers one upon another.
CONSTITUTION: A monocrystalline Si wafer 12 is selectively etched for forming separating grooves 13 and, after the whole surface thereof covered with SiO2 film 14, placed in an epitaxial formation reactor furnace. Next, SiO2 film layer 15 is first formed on said film 14 by CVD method with said water 12 heated up to 1,100W 1,250°C while SiHCl3, H2 and CO2 are kept flowing. Therefore, polycrystalline Si layer 16 is formed on said film 15 by using Si chloride on said reactor furnace, and a dielectris is made of said layer 16 and film 15. Said dielectric is increased to a desired thickness by repeating the process described heretofore if necessary, SiO2 film is deposited on the whole surface including the grooves 17 corresponding to said grooves 13 still remaining after shallowing, of said wafer 12, and thus-obtained surface is smoothened.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8393778A JPS6056291B2 (en) | 1978-07-12 | 1978-07-12 | Manufacturing method of dielectric insulation isolation substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8393778A JPS6056291B2 (en) | 1978-07-12 | 1978-07-12 | Manufacturing method of dielectric insulation isolation substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5511347A true JPS5511347A (en) | 1980-01-26 |
| JPS6056291B2 JPS6056291B2 (en) | 1985-12-09 |
Family
ID=13816497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8393778A Expired JPS6056291B2 (en) | 1978-07-12 | 1978-07-12 | Manufacturing method of dielectric insulation isolation substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6056291B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61139042A (en) * | 1984-12-10 | 1986-06-26 | エイ・ティ・アンド・ティ・コーポレーション | Reduction of spring back in warp of substrate using polysilicon subsurface strain layer |
| JPS63182836A (en) * | 1987-01-24 | 1988-07-28 | Matsushita Electric Works Ltd | Manufacture of dielectric isolation substrate |
| US5081061A (en) * | 1990-02-23 | 1992-01-14 | Harris Corporation | Manufacturing ultra-thin dielectrically isolated wafers |
-
1978
- 1978-07-12 JP JP8393778A patent/JPS6056291B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61139042A (en) * | 1984-12-10 | 1986-06-26 | エイ・ティ・アンド・ティ・コーポレーション | Reduction of spring back in warp of substrate using polysilicon subsurface strain layer |
| JPS63182836A (en) * | 1987-01-24 | 1988-07-28 | Matsushita Electric Works Ltd | Manufacture of dielectric isolation substrate |
| US5081061A (en) * | 1990-02-23 | 1992-01-14 | Harris Corporation | Manufacturing ultra-thin dielectrically isolated wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6056291B2 (en) | 1985-12-09 |
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