TW333655B - The carrier structure for carrying to-be-processed article - Google Patents

The carrier structure for carrying to-be-processed article

Info

Publication number
TW333655B
TW333655B TW086100918A TW86100918A TW333655B TW 333655 B TW333655 B TW 333655B TW 086100918 A TW086100918 A TW 086100918A TW 86100918 A TW86100918 A TW 86100918A TW 333655 B TW333655 B TW 333655B
Authority
TW
Taiwan
Prior art keywords
carrier body
metal material
inorganic non
sintering
carrying
Prior art date
Application number
TW086100918A
Other languages
English (en)
Inventor
Nobuo Tshii
Original Assignee
Tokyo Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW333655B publication Critical patent/TW333655B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
TW086100918A 1996-02-01 1997-01-28 The carrier structure for carrying to-be-processed article TW333655B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3892796A JPH09213781A (ja) 1996-02-01 1996-02-01 載置台構造及びそれを用いた処理装置

Publications (1)

Publication Number Publication Date
TW333655B true TW333655B (en) 1998-06-11

Family

ID=12538872

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086100918A TW333655B (en) 1996-02-01 1997-01-28 The carrier structure for carrying to-be-processed article

Country Status (4)

Country Link
US (1) US5851298A (zh)
JP (1) JPH09213781A (zh)
KR (1) KR100407708B1 (zh)
TW (1) TW333655B (zh)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69731740T2 (de) * 1996-05-05 2005-12-15 Tateho Chemical Industries Co., Ltd., Akou Elektrisches heizelement und mit diesem versehehe spannnvorrichtung
JPH1064983A (ja) * 1996-08-16 1998-03-06 Sony Corp ウエハステージ
JPH11176902A (ja) * 1997-12-10 1999-07-02 Oki Electric Ind Co Ltd 半導体製造装置及びその製造方法
JP3283459B2 (ja) * 1997-12-17 2002-05-20 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
JPH11343571A (ja) * 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6530992B1 (en) * 1999-07-09 2003-03-11 Applied Materials, Inc. Method of forming a film in a chamber and positioning a substitute in a chamber
US6376807B1 (en) 1999-07-09 2002-04-23 Applied Materials, Inc. Enhanced cooling IMP coil support
JP3813421B2 (ja) * 1999-08-23 2006-08-23 イビデン株式会社 ウエハプローバ装置
JP3464177B2 (ja) * 1999-09-06 2003-11-05 沖電気工業株式会社 半導体製造装置および静電気除去方法
TW476983B (en) * 1999-09-30 2002-02-21 Tokyo Electron Ltd Heat treatment unit and heat treatment method
JP4430769B2 (ja) * 1999-12-09 2010-03-10 信越化学工業株式会社 セラミックス加熱治具
US6377437B1 (en) * 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
JP2002057207A (ja) * 2000-01-20 2002-02-22 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置
JP2001203257A (ja) * 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体
US6472643B1 (en) * 2000-03-07 2002-10-29 Silicon Valley Group, Inc. Substrate thermal management system
US6414276B1 (en) 2000-03-07 2002-07-02 Silicon Valley Group, Inc. Method for substrate thermal management
WO2001078456A1 (fr) * 2000-04-07 2001-10-18 Ibiden Co., Ltd. Element ceramique chauffant
US6717115B1 (en) * 2000-04-25 2004-04-06 Teradyne, Inc. Semiconductor handler for rapid testing
US6444957B1 (en) * 2000-04-26 2002-09-03 Sumitomo Osaka Cement Co., Ltd Heating apparatus
TWI254403B (en) 2000-05-19 2006-05-01 Ngk Insulators Ltd Electrostatic clamper, and electrostatic attracting structures
US6414271B2 (en) * 2000-05-25 2002-07-02 Kyocera Corporation Contact heating device
NL1015550C2 (nl) * 2000-06-28 2002-01-02 Xycarb Ceramics B V Werkwijze voor het vervaardigen van een uit een kern opgebouwde susceptor, aldus verkregen susceptor en een werkwijze voor het aanbrengen van actieve lagen op een halfgeleidersubstraat onder toepassing van een dergelijke susceptor.
JP2002025912A (ja) * 2000-07-04 2002-01-25 Sumitomo Electric Ind Ltd 半導体製造装置用サセプタとそれを用いた半導体製造装置
JP2002025913A (ja) * 2000-07-04 2002-01-25 Sumitomo Electric Ind Ltd 半導体製造装置用サセプタとそれを用いた半導体製造装置
JP5246985B2 (ja) * 2000-09-29 2013-07-24 東京エレクトロン株式会社 熱処理装置
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
KR20020064508A (ko) * 2001-02-02 2002-08-09 삼성전자 주식회사 정전 척
JP2002313781A (ja) * 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd 基板処理装置
US20020185487A1 (en) * 2001-05-02 2002-12-12 Ramesh Divakar Ceramic heater with heater element and method for use thereof
US20030010292A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Electrostatic chuck with dielectric coating
US6510888B1 (en) 2001-08-01 2003-01-28 Applied Materials, Inc. Substrate support and method of fabricating the same
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US6838646B2 (en) * 2002-08-22 2005-01-04 Sumitomo Osaka Cement Co., Ltd. Susceptor device
US20040045813A1 (en) * 2002-09-03 2004-03-11 Seiichiro Kanno Wafer processing apparatus, wafer stage, and wafer processing method
CN1310285C (zh) * 2003-05-12 2007-04-11 东京毅力科创株式会社 处理装置
JP4518370B2 (ja) * 2003-07-10 2010-08-04 日本碍子株式会社 セラミックサセプターの支持構造
US20050194374A1 (en) * 2004-03-02 2005-09-08 Applied Materials, Inc. Heated ceramic substrate support with protective coating
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP4281605B2 (ja) * 2004-04-08 2009-06-17 住友電気工業株式会社 半導体加熱装置
US20060106635A1 (en) * 2004-11-18 2006-05-18 Karl Ulrich Emission remediation
JP4497103B2 (ja) * 2006-02-21 2010-07-07 住友電気工業株式会社 ウェハ保持体およびそれを搭載したヒータユニット、ウェハプローバ
US20090065146A1 (en) * 2006-03-06 2009-03-12 Tokyo Electron Limited Plasma processing apparatus
KR20080091072A (ko) * 2006-05-24 2008-10-09 에스이아이 하이브리드 가부시키가이샤 웨이퍼 유지체와 그 제조 방법 및 반도체 제조 장치
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
JP5117146B2 (ja) * 2006-12-15 2013-01-09 日本碍子株式会社 加熱装置
US7763831B2 (en) * 2006-12-15 2010-07-27 Ngk Insulators, Ltd. Heating device
KR100884333B1 (ko) * 2007-04-03 2009-02-18 세메스 주식회사 기판 지지 부재, 그리고 이를 포함하는 기판 처리 장치
TWI459851B (zh) * 2007-09-10 2014-11-01 Ngk Insulators Ltd heating equipment
JP2009170509A (ja) * 2008-01-11 2009-07-30 Hitachi High-Technologies Corp ヒータ内蔵静電チャックを備えたプラズマ処理装置
KR100943427B1 (ko) * 2008-02-04 2010-02-19 주식회사 유진테크 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US8879233B2 (en) 2009-05-15 2014-11-04 Entegris, Inc. Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
KR101841378B1 (ko) * 2009-12-15 2018-03-22 램 리써치 코포레이션 Ｃｄ 균일성을 향상시키기 위한 기판 온도의 조절
JP5416570B2 (ja) * 2009-12-15 2014-02-12 住友電気工業株式会社 加熱冷却デバイスおよびそれを搭載した装置
CN105196094B (zh) 2010-05-28 2018-01-26 恩特格林斯公司 高表面电阻率静电吸盘
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US8669540B2 (en) * 2011-01-03 2014-03-11 Varian Semiconductor Equipment Associates, Inc. System and method for gas leak control in a substrate holder
JP5953012B2 (ja) * 2011-06-22 2016-07-13 株式会社アルバック 基板保持装置
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
US10008404B2 (en) 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
US10008399B2 (en) * 2015-05-19 2018-06-26 Applied Materials, Inc. Electrostatic puck assembly with metal bonded backing plate for high temperature processes
US10249526B2 (en) 2016-03-04 2019-04-02 Applied Materials, Inc. Substrate support assembly for high temperature processes
US10957572B2 (en) 2018-05-02 2021-03-23 Applied Materials, Inc. Multi-zone gasket for substrate support assembly
CN110911332B (zh) * 2018-09-14 2022-11-25 北京北方华创微电子装备有限公司 静电卡盘
WO2020073779A1 (zh) * 2018-10-11 2020-04-16 北京北方华创微电子装备有限公司 静电卡盘及反应腔室
WO2024024514A1 (ja) * 2022-07-29 2024-02-01 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1218221B (it) * 1988-04-15 1990-04-12 Bayer Ag Sistemi di riscaldamento ad alta temperatura e metodo per produrli
JPH02206147A (ja) * 1989-02-06 1990-08-15 Toto Ltd 静電チャックの製造方法
EP0447155B1 (en) * 1990-03-12 1995-07-26 Ngk Insulators, Ltd. Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters
JP3238925B2 (ja) * 1990-11-17 2001-12-17 株式会社東芝 静電チャック
EP1120817B8 (en) * 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
GB2263770B (en) * 1992-01-23 1994-11-02 Ceramaspeed Ltd Device for controlling or limiting temperature in an electric cooking appliance
JP2865472B2 (ja) * 1992-02-20 1999-03-08 信越化学工業株式会社 静電チャック
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
JPH0711446A (ja) * 1993-05-27 1995-01-13 Applied Materials Inc 気相成長用サセプタ装置
JPH07183277A (ja) * 1993-12-21 1995-07-21 Tokyo Electron Ltd 処理装置
JPH07297268A (ja) * 1993-12-27 1995-11-10 Shin Etsu Chem Co Ltd 静電チャック付セラミックスヒーター
JPH07307377A (ja) * 1993-12-27 1995-11-21 Shin Etsu Chem Co Ltd 静電チャック付セラミックスヒーター
DE4429825C1 (de) * 1994-08-23 1995-11-09 Heraeus Quarzglas Beschichtetes Bauteil aus Quarzglas
JPH08130237A (ja) * 1994-11-01 1996-05-21 Fuji Electric Co Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JPH09213781A (ja) 1997-08-15
KR970063516A (ko) 1997-09-12
US5851298A (en) 1998-12-22
KR100407708B1 (ko) 2004-01-28

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MM4A Annulment or lapse of patent due to non-payment of fees