TW327244B - Voltage driven gate and process of producing the same - Google Patents

Voltage driven gate and process of producing the same

Info

Publication number
TW327244B
TW327244B TW083101610A TW83101610A TW327244B TW 327244 B TW327244 B TW 327244B TW 083101610 A TW083101610 A TW 083101610A TW 83101610 A TW83101610 A TW 83101610A TW 327244 B TW327244 B TW 327244B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
channels
conductive type
area
voltage driven
Prior art date
Application number
TW083101610A
Other languages
English (en)
Inventor
Mana Harada
Original Assignee
Mitsubishi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi filed Critical Mitsubishi
Application granted granted Critical
Publication of TW327244B publication Critical patent/TW327244B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
TW083101610A 1993-12-15 1994-02-25 Voltage driven gate and process of producing the same TW327244B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31504593A JP3260944B2 (ja) 1993-12-15 1993-12-15 電圧駆動型サイリスタおよびその製造方法

Publications (1)

Publication Number Publication Date
TW327244B true TW327244B (en) 1998-02-21

Family

ID=18060770

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083101610A TW327244B (en) 1993-12-15 1994-02-25 Voltage driven gate and process of producing the same

Country Status (7)

Country Link
US (1) US5457329A (zh)
EP (1) EP0658939B1 (zh)
JP (1) JP3260944B2 (zh)
KR (1) KR0146640B1 (zh)
DE (1) DE69434562T2 (zh)
DK (1) DK0658939T3 (zh)
TW (1) TW327244B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104916672A (zh) * 2014-03-14 2015-09-16 株式会社东芝 半导体装置及其制造方法
US9362359B2 (en) 2014-03-13 2016-06-07 Kabushiki Kaisha Toshiba Semiconductor device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777346A (en) * 1996-01-16 1998-07-07 Harris Corporation Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench
JPH09246523A (ja) * 1996-03-13 1997-09-19 Mitsubishi Electric Corp 半導体装置
US6080625A (en) * 1998-08-26 2000-06-27 Lucent Technologies Inc. Method for making dual-polysilicon structures in integrated circuits
JP3647676B2 (ja) * 1999-06-30 2005-05-18 株式会社東芝 半導体装置
US6534828B1 (en) * 2000-09-19 2003-03-18 Fairchild Semiconductor Corporation Integrated circuit device including a deep well region and associated methods
JP4534500B2 (ja) * 2003-05-14 2010-09-01 株式会社デンソー 半導体装置の製造方法
JP4575713B2 (ja) * 2004-05-31 2010-11-04 三菱電機株式会社 絶縁ゲート型半導体装置
KR100549010B1 (ko) * 2004-06-17 2006-02-02 삼성전자주식회사 채널부 홀의 일 측벽에 채널 영역을 갖는 트랜지스터의형성방법들
CN103137658A (zh) * 2011-11-30 2013-06-05 成都成电知力微电子设计有限公司 半导体器件的含导电颗粒的绝缘体与半导体构成的耐压层
US9306048B2 (en) * 2012-10-01 2016-04-05 Pakal Technologies Llc Dual depth trench-gated mos-controlled thyristor with well-defined turn-on characteristics
JP6830390B2 (ja) * 2017-03-28 2021-02-17 エイブリック株式会社 半導体装置
US11145717B2 (en) * 2018-10-01 2021-10-12 Pakal Technologies, Inc. Cellular insulated gate power device with edge design to prevent failure near edge
DE102019210681A1 (de) * 2019-05-31 2020-12-03 Robert Bosch Gmbh Leistungstransistorzelle und Leistungstransistor
CN112750902B (zh) * 2021-02-05 2021-11-02 深圳吉华微特电子有限公司 一种高抗短路能力的沟槽栅igbt

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0091686B1 (en) * 1982-04-12 1989-06-28 General Electric Company Semiconductor device having a diffused region of reduced length and method of fabricating the same
EP0159663A3 (en) * 1984-04-26 1987-09-23 General Electric Company High-density v-groove mos-controlled thyristors, insulated-gate transistors, and mosfets, and methods for fabrication
EP0219995B1 (en) * 1985-09-30 1994-03-02 Kabushiki Kaisha Toshiba Gate turn-off thyristor with independent turn-on/off controlling transistors
JP3119890B2 (ja) * 1991-04-16 2000-12-25 株式会社東芝 絶縁ゲート付サイリスタ
JP2504862B2 (ja) * 1990-10-08 1996-06-05 三菱電機株式会社 半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362359B2 (en) 2014-03-13 2016-06-07 Kabushiki Kaisha Toshiba Semiconductor device
CN104916672A (zh) * 2014-03-14 2015-09-16 株式会社东芝 半导体装置及其制造方法

Also Published As

Publication number Publication date
DE69434562D1 (de) 2006-01-05
EP0658939A2 (en) 1995-06-21
DK0658939T3 (da) 2005-12-27
DE69434562T2 (de) 2006-08-10
JP3260944B2 (ja) 2002-02-25
JPH07169941A (ja) 1995-07-04
EP0658939A3 (en) 1999-05-19
KR0146640B1 (ko) 1998-08-01
KR950021736A (ko) 1995-07-26
US5457329A (en) 1995-10-10
EP0658939B1 (en) 2005-11-30

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