TW326553B - Semiconductor device and method of fabricating same - Google Patents

Semiconductor device and method of fabricating same

Info

Publication number
TW326553B
TW326553B TW086100485A TW86100485A TW326553B TW 326553 B TW326553 B TW 326553B TW 086100485 A TW086100485 A TW 086100485A TW 86100485 A TW86100485 A TW 86100485A TW 326553 B TW326553 B TW 326553B
Authority
TW
Taiwan
Prior art keywords
forming
channel
conductive film
insulator
semiconductor device
Prior art date
Application number
TW086100485A
Other languages
English (en)
Inventor
Shunpei Yamazaki
Yasuhiko Takemura
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02849796A external-priority patent/JP3657337B2/ja
Priority claimed from JP3292596A external-priority patent/JP3599873B2/ja
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW326553B publication Critical patent/TW326553B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW086100485A 1996-01-22 1997-01-17 Semiconductor device and method of fabricating same TW326553B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02849796A JP3657337B2 (ja) 1996-01-22 1996-01-22 Ｎａｎｄ型不揮発性メモリーとその作製方法
JP3292596A JP3599873B2 (ja) 1996-01-26 1996-01-26 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
TW326553B true TW326553B (en) 1998-02-11

Family

ID=26366607

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086100485A TW326553B (en) 1996-01-22 1997-01-17 Semiconductor device and method of fabricating same

Country Status (3)

Country Link
US (4) US5888868A (zh)
KR (2) KR100301372B1 (zh)
TW (1) TW326553B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE44473E1 (en) 2007-12-24 2013-09-03 Hynix Semiconductor Inc. Method for fabricating semiconductor device with vertical channel transistor

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TW326553B (en) * 1996-01-22 1998-02-11 Handotai Energy Kenkyusho Kk Semiconductor device and method of fabricating same
DE19603810C1 (de) * 1996-02-02 1997-08-28 Siemens Ag Speicherzellenanordnung und Verfahren zu deren Herstellung
US6051465A (en) * 1997-07-30 2000-04-18 Matsushita Electronics Corporation Method for fabricating nonvolatile semiconductor memory device
US5973352A (en) * 1997-08-20 1999-10-26 Micron Technology, Inc. Ultra high density flash memory having vertically stacked devices
JP3540579B2 (ja) * 1997-11-07 2004-07-07 株式会社東芝 半導体記憶装置及びその製造方法
EP0967654A1 (en) * 1998-06-26 1999-12-29 EM Microelectronic-Marin SA Non-volatile semiconductor memory device
DE19929233C1 (de) * 1999-06-25 2001-02-01 Siemens Ag Speicherzellenanordnung mit auf einer Grabenseitenwand angeordnetem Floating-Gate und Herstellungsverfahren
JP3679970B2 (ja) * 2000-03-28 2005-08-03 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US6577531B2 (en) 2000-04-27 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
US6566682B2 (en) * 2001-02-09 2003-05-20 Micron Technology, Inc. Programmable memory address and decode circuits with ultra thin vertical body transistors
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US6559491B2 (en) * 2001-02-09 2003-05-06 Micron Technology, Inc. Folded bit line DRAM with ultra thin body transistors
US6424001B1 (en) 2001-02-09 2002-07-23 Micron Technology, Inc. Flash memory with ultra thin vertical body transistors
WO2003028112A1 (fr) * 2001-09-20 2003-04-03 Renesas Technology Corp. Dispositif de circuit integre a semi-conducteur et son procede de fabrication
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JP4412903B2 (ja) * 2002-06-24 2010-02-10 株式会社ルネサステクノロジ 半導体装置
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US7148538B2 (en) * 2003-12-17 2006-12-12 Micron Technology, Inc. Vertical NAND flash memory array
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US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US20070020840A1 (en) * 2005-07-25 2007-01-25 Freescale Semiconductor, Inc. Programmable structure including nanocrystal storage elements in a trench
US7226840B2 (en) * 2005-07-25 2007-06-05 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7394686B2 (en) * 2005-07-25 2008-07-01 Freescale Semiconductor, Inc. Programmable structure including discontinuous storage elements and spacer control gates in a trench
US7205608B2 (en) * 2005-07-25 2007-04-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7250340B2 (en) * 2005-07-25 2007-07-31 Freescale Semiconductor, Inc. Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
US7285819B2 (en) * 2005-07-25 2007-10-23 Freescale Semiconductor, Inc. Nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7314798B2 (en) * 2005-07-25 2008-01-01 Freescale Semiconductor, Inc. Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7211487B2 (en) * 2005-07-25 2007-05-01 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7256454B2 (en) * 2005-07-25 2007-08-14 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements and a process for forming the same
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7211858B2 (en) * 2005-07-25 2007-05-01 Freescale Semiconductor, Inc. Split gate storage device including a horizontal first gate and a vertical second gate in a trench
KR100707674B1 (ko) * 2005-07-26 2007-04-13 동부일렉트로닉스 주식회사 플래시 기억 장치 및 그 제조 방법
KR100643468B1 (ko) * 2005-12-01 2006-11-10 동부일렉트로닉스 주식회사 절연막 스페이서가 형성된 비휘발성 메모리 소자 및 그제조 방법
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
US8629490B2 (en) * 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
US7692973B2 (en) * 2006-03-31 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
TWI466269B (zh) * 2006-07-14 2014-12-21 Semiconductor Energy Lab 非揮發性記憶體
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
JP2009094354A (ja) * 2007-10-10 2009-04-30 Toshiba Corp 不揮発性半導体記憶装置
CN102017129B (zh) * 2008-05-09 2013-10-23 株式会社半导体能源研究所 非易失性半导体存储装置
US8188535B2 (en) 2008-05-16 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
US8198666B2 (en) 2009-02-20 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a nonvolatile memory element having first, second and third insulating films
CN102822979B (zh) 2010-03-26 2015-08-26 株式会社半导体能源研究所 半导体器件
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
JP6000560B2 (ja) 2011-02-02 2016-09-28 株式会社半導体エネルギー研究所 半導体メモリ装置
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
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US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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JP6100559B2 (ja) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
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USRE44473E1 (en) 2007-12-24 2013-09-03 Hynix Semiconductor Inc. Method for fabricating semiconductor device with vertical channel transistor

Also Published As

Publication number Publication date
KR970060500A (ko) 1997-08-12
US20030062565A1 (en) 2003-04-03
KR100301372B1 (ko) 2001-10-26
US6198125B1 (en) 2001-03-06
KR100301588B1 (ko) 2001-09-22
US5888868A (en) 1999-03-30
US6448135B1 (en) 2002-09-10
US6734492B2 (en) 2004-05-11

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MM4A Annulment or lapse of patent due to non-payment of fees