IT1236601B - Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione. - Google Patents

Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione.

Info

Publication number
IT1236601B
IT1236601B IT08365189A IT8365189A IT1236601B IT 1236601 B IT1236601 B IT 1236601B IT 08365189 A IT08365189 A IT 08365189A IT 8365189 A IT8365189 A IT 8365189A IT 1236601 B IT1236601 B IT 1236601B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
source
semiconductor device
integrated semiconductor
Prior art date
Application number
IT08365189A
Other languages
English (en)
Other versions
IT8983651A0 (it
IT8983651A1 (it
Inventor
Pier Luigi Crotti
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT08365189A priority Critical patent/IT1236601B/it
Publication of IT8983651A0 publication Critical patent/IT8983651A0/it
Priority to EP90830586A priority patent/EP0436475B1/en
Priority to DE69017874T priority patent/DE69017874T2/de
Priority to US07/632,101 priority patent/US5210046A/en
Priority to JP2413301A priority patent/JP3072130B2/ja
Publication of IT8983651A1 publication Critical patent/IT8983651A1/it
Priority to US08/016,741 priority patent/US5345417A/en
Application granted granted Critical
Publication of IT1236601B publication Critical patent/IT1236601B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
IT08365189A 1989-12-22 1989-12-22 Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione. IT1236601B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT08365189A IT1236601B (it) 1989-12-22 1989-12-22 Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione.
EP90830586A EP0436475B1 (en) 1989-12-22 1990-12-14 Eprom device with metallic source connections and fabrication thereof
DE69017874T DE69017874T2 (de) 1989-12-22 1990-12-14 EPROM-Anordnung mit metallenen Source-Anschlüssen und ihre Herstellung.
US07/632,101 US5210046A (en) 1989-12-22 1990-12-20 Method of fabricating eprom device with metallic source connections
JP2413301A JP3072130B2 (ja) 1989-12-22 1990-12-22 金属製ソース接続を有するｅｐｒｏｍデバイス及びその製造方法
US08/016,741 US5345417A (en) 1989-12-22 1993-02-11 EPROM device with metallic source connections and fabrication thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT08365189A IT1236601B (it) 1989-12-22 1989-12-22 Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione.

Publications (3)

Publication Number Publication Date
IT8983651A0 IT8983651A0 (it) 1989-12-22
IT8983651A1 IT8983651A1 (it) 1991-06-22
IT1236601B true IT1236601B (it) 1993-03-18

Family

ID=11323646

Family Applications (1)

Application Number Title Priority Date Filing Date
IT08365189A IT1236601B (it) 1989-12-22 1989-12-22 Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione.

Country Status (5)

Country Link
US (2) US5210046A (it)
EP (1) EP0436475B1 (it)
JP (1) JP3072130B2 (it)
DE (1) DE69017874T2 (it)
IT (1) IT1236601B (it)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1243303B (it) * 1990-07-24 1994-05-26 Sgs Thomson Microelectronics Schieramento di celle di memoria con linee metalliche di connessione di source e di drain formate sul substrato ed ortogonalmente sovrastate da linee di connessione di gate e procedimento per la sua fabbricazione
US5488006A (en) * 1990-09-20 1996-01-30 Mitsubishi Denki Kabushiki Kaisha One-chip microcomputer manufacturing method
DE4031397C2 (de) * 1990-10-04 2000-11-23 Mitsubishi Electric Corp Herstellungsverfahren für einen Einchipmikrocomputer
US5289423A (en) * 1990-11-16 1994-02-22 Sgs-Thomson Microelectronics S.R.L. Bank erasable, flash-EPROM memory
IT1247654B (it) * 1990-11-16 1994-12-28 Sgs Thomson Microelectronics Memoria flash eprom cancellabile per gruppi di celle mediante doppia mmetal
US5286672A (en) * 1991-06-28 1994-02-15 Sgs-Thomson Microelectronics, Inc. Method for forming field oxide regions
DE69226223T2 (de) * 1991-08-21 1998-12-24 Sgs-Thomson Microelectronics, Inc., Carrollton, Tex. Kontaktausrichtung für Festwertspeicher
EP0573728B1 (en) * 1992-06-01 1996-01-03 STMicroelectronics S.r.l. Process for fabricating high density contactless EPROMs
KR100277267B1 (ko) * 1992-11-25 2001-02-01 사와무라 시코 반도체 불휘발성 메모리 및 그 제조방법
TW299475B (it) * 1993-03-30 1997-03-01 Siemens Ag
US5635415A (en) * 1994-11-30 1997-06-03 United Microelectronics Corporation Method of manufacturing buried bit line flash EEPROM memory cell
TW326553B (en) 1996-01-22 1998-02-11 Handotai Energy Kenkyusho Kk Semiconductor device and method of fabricating same
US6306727B1 (en) 1997-08-18 2001-10-23 Micron Technology, Inc. Advanced isolation process for large memory arrays
US6373095B1 (en) 1998-02-25 2002-04-16 International Business Machines Corporation NVRAM cell having increased coupling ratio between a control gate and floating gate without an increase in cell area
US6215145B1 (en) * 1998-04-06 2001-04-10 Micron Technology, Inc. Dense SOI flash memory array structure
US6381166B1 (en) * 1998-09-28 2002-04-30 Texas Instruments Incorporated Semiconductor memory device having variable pitch array
KR100346598B1 (ko) * 1999-10-07 2002-07-26 동부전자 주식회사 반도체 디바이스의 메모리 셀 제조 방법
US7518182B2 (en) 2004-07-20 2009-04-14 Micron Technology, Inc. DRAM layout with vertical FETs and method of formation
US7247570B2 (en) * 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
US7285812B2 (en) 2004-09-02 2007-10-23 Micron Technology, Inc. Vertical transistors
US7199419B2 (en) * 2004-12-13 2007-04-03 Micron Technology, Inc. Memory structure for reduced floating body effect
US7229895B2 (en) 2005-01-14 2007-06-12 Micron Technology, Inc Memory array buried digit line
US7371627B1 (en) 2005-05-13 2008-05-13 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US7120046B1 (en) 2005-05-13 2006-10-10 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
US7888721B2 (en) * 2005-07-06 2011-02-15 Micron Technology, Inc. Surround gate access transistors with grown ultra-thin bodies
US7768051B2 (en) * 2005-07-25 2010-08-03 Micron Technology, Inc. DRAM including a vertical surround gate transistor
US7696567B2 (en) 2005-08-31 2010-04-13 Micron Technology, Inc Semiconductor memory device
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US9401363B2 (en) 2011-08-23 2016-07-26 Micron Technology, Inc. Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4373248A (en) * 1978-07-12 1983-02-15 Texas Instruments Incorporated Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like
US4377818A (en) * 1978-11-02 1983-03-22 Texas Instruments Incorporated High density electrically programmable ROM
JPS6130063A (ja) * 1984-07-23 1986-02-12 Nec Corp 不揮発性半導体記憶装置
IT1213241B (it) * 1984-11-07 1989-12-14 Ates Componenti Elettron Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura.
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM
FR2603128B1 (fr) * 1986-08-21 1988-11-10 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
IT1227989B (it) * 1988-12-05 1991-05-20 Sgs Thomson Microelectronics Matrice di celle di memoria eprom con struttura a tovaglia con migliorato rapporto capacitivo e processo per la sua fabbricazione
IT1235690B (it) * 1989-04-07 1992-09-21 Sgs Thomson Microelectronics Procedimento di fabbricazione per una matrice di celle eprom organizzate a tovaglia.
US5112761A (en) * 1990-01-10 1992-05-12 Microunity Systems Engineering Bicmos process utilizing planarization technique

Also Published As

Publication number Publication date
IT8983651A0 (it) 1989-12-22
IT8983651A1 (it) 1991-06-22
EP0436475A3 (en) 1992-04-29
DE69017874T2 (de) 1995-07-06
US5210046A (en) 1993-05-11
JPH04218973A (ja) 1992-08-10
US5345417A (en) 1994-09-06
JP3072130B2 (ja) 2000-07-31
EP0436475A2 (en) 1991-07-10
DE69017874D1 (de) 1995-04-20
EP0436475B1 (en) 1995-03-15

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227