DE69017874T2 - EPROM-Anordnung mit metallenen Source-Anschlüssen und ihre Herstellung. - Google Patents
EPROM-Anordnung mit metallenen Source-Anschlüssen und ihre Herstellung.Info
- Publication number
- DE69017874T2 DE69017874T2 DE69017874T DE69017874T DE69017874T2 DE 69017874 T2 DE69017874 T2 DE 69017874T2 DE 69017874 T DE69017874 T DE 69017874T DE 69017874 T DE69017874 T DE 69017874T DE 69017874 T2 DE69017874 T2 DE 69017874T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- metal source
- source connections
- eprom
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT08365189A IT1236601B (it) | 1989-12-22 | 1989-12-22 | Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69017874D1 DE69017874D1 (de) | 1995-04-20 |
DE69017874T2 true DE69017874T2 (de) | 1995-07-06 |
Family
ID=11323646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69017874T Expired - Fee Related DE69017874T2 (de) | 1989-12-22 | 1990-12-14 | EPROM-Anordnung mit metallenen Source-Anschlüssen und ihre Herstellung. |
Country Status (5)
Country | Link |
---|---|
US (2) | US5210046A (de) |
EP (1) | EP0436475B1 (de) |
JP (1) | JP3072130B2 (de) |
DE (1) | DE69017874T2 (de) |
IT (1) | IT1236601B (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1243303B (it) * | 1990-07-24 | 1994-05-26 | Sgs Thomson Microelectronics | Schieramento di celle di memoria con linee metalliche di connessione di source e di drain formate sul substrato ed ortogonalmente sovrastate da linee di connessione di gate e procedimento per la sua fabbricazione |
US5488006A (en) * | 1990-09-20 | 1996-01-30 | Mitsubishi Denki Kabushiki Kaisha | One-chip microcomputer manufacturing method |
DE4031397C2 (de) * | 1990-10-04 | 2000-11-23 | Mitsubishi Electric Corp | Herstellungsverfahren für einen Einchipmikrocomputer |
IT1247654B (it) * | 1990-11-16 | 1994-12-28 | Sgs Thomson Microelectronics | Memoria flash eprom cancellabile per gruppi di celle mediante doppia mmetal |
US5289423A (en) * | 1990-11-16 | 1994-02-22 | Sgs-Thomson Microelectronics S.R.L. | Bank erasable, flash-EPROM memory |
US5286672A (en) * | 1991-06-28 | 1994-02-15 | Sgs-Thomson Microelectronics, Inc. | Method for forming field oxide regions |
EP0528690B1 (de) * | 1991-08-21 | 1998-07-15 | STMicroelectronics, Inc. | Kontaktausrichtung für Festwertspeicher |
EP0573728B1 (de) * | 1992-06-01 | 1996-01-03 | STMicroelectronics S.r.l. | Verfahren zur Herstellung hochintegrierter kontaktloser EPROM's |
KR100277267B1 (ko) * | 1992-11-25 | 2001-02-01 | 사와무라 시코 | 반도체 불휘발성 메모리 및 그 제조방법 |
TW299475B (de) * | 1993-03-30 | 1997-03-01 | Siemens Ag | |
US5635415A (en) * | 1994-11-30 | 1997-06-03 | United Microelectronics Corporation | Method of manufacturing buried bit line flash EEPROM memory cell |
TW326553B (en) * | 1996-01-22 | 1998-02-11 | Handotai Energy Kenkyusho Kk | Semiconductor device and method of fabricating same |
US6306727B1 (en) * | 1997-08-18 | 2001-10-23 | Micron Technology, Inc. | Advanced isolation process for large memory arrays |
US6373095B1 (en) | 1998-02-25 | 2002-04-16 | International Business Machines Corporation | NVRAM cell having increased coupling ratio between a control gate and floating gate without an increase in cell area |
US6215145B1 (en) * | 1998-04-06 | 2001-04-10 | Micron Technology, Inc. | Dense SOI flash memory array structure |
US6381166B1 (en) * | 1998-09-28 | 2002-04-30 | Texas Instruments Incorporated | Semiconductor memory device having variable pitch array |
KR100346598B1 (ko) * | 1999-10-07 | 2002-07-26 | 동부전자 주식회사 | 반도체 디바이스의 메모리 셀 제조 방법 |
US7518182B2 (en) | 2004-07-20 | 2009-04-14 | Micron Technology, Inc. | DRAM layout with vertical FETs and method of formation |
US7247570B2 (en) | 2004-08-19 | 2007-07-24 | Micron Technology, Inc. | Silicon pillars for vertical transistors |
US7285812B2 (en) | 2004-09-02 | 2007-10-23 | Micron Technology, Inc. | Vertical transistors |
US7199419B2 (en) * | 2004-12-13 | 2007-04-03 | Micron Technology, Inc. | Memory structure for reduced floating body effect |
US7229895B2 (en) * | 2005-01-14 | 2007-06-12 | Micron Technology, Inc | Memory array buried digit line |
US7371627B1 (en) | 2005-05-13 | 2008-05-13 | Micron Technology, Inc. | Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines |
US7120046B1 (en) | 2005-05-13 | 2006-10-10 | Micron Technology, Inc. | Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines |
US7888721B2 (en) | 2005-07-06 | 2011-02-15 | Micron Technology, Inc. | Surround gate access transistors with grown ultra-thin bodies |
US7768051B2 (en) | 2005-07-25 | 2010-08-03 | Micron Technology, Inc. | DRAM including a vertical surround gate transistor |
US7696567B2 (en) | 2005-08-31 | 2010-04-13 | Micron Technology, Inc | Semiconductor memory device |
US7859026B2 (en) * | 2006-03-16 | 2010-12-28 | Spansion Llc | Vertical semiconductor device |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US9401363B2 (en) | 2011-08-23 | 2016-07-26 | Micron Technology, Inc. | Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4373248A (en) * | 1978-07-12 | 1983-02-15 | Texas Instruments Incorporated | Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like |
US4377818A (en) * | 1978-11-02 | 1983-03-22 | Texas Instruments Incorporated | High density electrically programmable ROM |
JPS6130063A (ja) * | 1984-07-23 | 1986-02-12 | Nec Corp | 不揮発性半導体記憶装置 |
IT1213241B (it) * | 1984-11-07 | 1989-12-14 | Ates Componenti Elettron | Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura. |
US4698787A (en) * | 1984-11-21 | 1987-10-06 | Exel Microelectronics, Inc. | Single transistor electrically programmable memory device and method |
US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
FR2603128B1 (fr) * | 1986-08-21 | 1988-11-10 | Commissariat Energie Atomique | Cellule de memoire eprom et son procede de fabrication |
IT1227989B (it) * | 1988-12-05 | 1991-05-20 | Sgs Thomson Microelectronics | Matrice di celle di memoria eprom con struttura a tovaglia con migliorato rapporto capacitivo e processo per la sua fabbricazione |
IT1235690B (it) * | 1989-04-07 | 1992-09-21 | Sgs Thomson Microelectronics | Procedimento di fabbricazione per una matrice di celle eprom organizzate a tovaglia. |
US5112761A (en) * | 1990-01-10 | 1992-05-12 | Microunity Systems Engineering | Bicmos process utilizing planarization technique |
-
1989
- 1989-12-22 IT IT08365189A patent/IT1236601B/it active IP Right Grant
-
1990
- 1990-12-14 DE DE69017874T patent/DE69017874T2/de not_active Expired - Fee Related
- 1990-12-14 EP EP90830586A patent/EP0436475B1/de not_active Expired - Lifetime
- 1990-12-20 US US07/632,101 patent/US5210046A/en not_active Expired - Lifetime
- 1990-12-22 JP JP2413301A patent/JP3072130B2/ja not_active Expired - Fee Related
-
1993
- 1993-02-11 US US08/016,741 patent/US5345417A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH04218973A (ja) | 1992-08-10 |
IT8983651A1 (it) | 1991-06-22 |
EP0436475B1 (de) | 1995-03-15 |
JP3072130B2 (ja) | 2000-07-31 |
EP0436475A2 (de) | 1991-07-10 |
IT1236601B (it) | 1993-03-18 |
US5210046A (en) | 1993-05-11 |
DE69017874D1 (de) | 1995-04-20 |
US5345417A (en) | 1994-09-06 |
IT8983651A0 (it) | 1989-12-22 |
EP0436475A3 (en) | 1992-04-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |